Anomalous temperature dependence of Fermi-edge singularity in modulation-doped AlGaAs/InGaAs/GaAs hetero-structures

The temperature and power dependence of Fermi-edge singularity (FES) in high-density two-dimensional electron gas, specific to pseudomorphic AlxGa1-xAs/InGa1-yAs/GaAs heterostructures is studied by photoluminescence (PL). In all these structures, there are two prominent transitions E-11 and E-21 considered to be the result of electron-hole recombination from first and second electron sub-bands with that of first heavy-hole sub-band. FES is observed approximately 5-10 meV below the E-21 transition. At 4.2 K, FES appears as a lower energy shoulder to the E-21 transition. The PL intensity of all the three transitions E-11, FES and E-21 grows linearly with excitation power. However, we observe anomalous behavior of FES with temperature. While PL intensity of E-11 and E-21 decrease with increasing temperature, FES transition becomes stronger initially and then quenches-off slowly (till 40K). Though it appears as a distinct peak at about 20 K, its maximum is around 7 - 13 K.

Growth of Orthorhombic SnS Nanobox Structures on Seeded Substrates

Tin sulfide (SnS) nanostructures have been synthesized using a simple and low temperature chemical solution method on seeded substrates, and their structural and optical properties have been investigated. The as-grown SnS nanostructures with well-defined facets exhibited good stoichiometry between constituent elements. These nanobox structures are preferentially oriented along the 010] direction by having 100] and 001] orientations as surrounding facets and exhibited Two distinguishable optical band gaps of 1.36 and 1.9 eV. The effect of solution concentration as well as seed layer on the morphology or SnS structures has also been studied, and finally, the growth mechanism of the regular SnS nanobox structures is proposed.

Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures

The present work explores the temperature dependent transport behavior of n-InN nanodot/p-Si(100) heterojunction diodes. InN nanodot (ND) structures were grown on a 20 nm InN buffer layer on p-Si(100) substrates. These dots were found to be single crystalline and grown along 001] direction. The junction between these two materials exhibits a strong rectifying behavior at low temperatures. The average barrier height (BH) was determined to be 0.7 eV from current-voltage-temperature, capacitance-voltage, and flat band considerations. The band offsets derived from built-in potential were found to be Delta E-C=1.8 eV and Delta E-V=1.3 eV and are in close agreement with Anderson's model. (C) 2010 American Institute of Physics. doi:10.1063/1.3517489]

Anomalous Temperature dependence of Fermi-edge Singularity in Modulation-doped AlGaAs/InGaAs/GaAs hetero-structures

The temperature and power dependence of Fermi-edge singularity (FES) in high-density two-dimensional electron gas, specific to pseudomorphic AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures is studied by photoluminescence (PL). In all these structures, there are two prominent transitions E11 and E21 considered to be the result of electron-hole recombination from first and second electron sub-bands with that of first heavy-hole sub-band. FES is observed approximately 5 -10 meV below the E21 transition. At 4.2 K, FES appears as a lower energy shoulder to the E21 transition. The PL intensity of all the three transitions E11, FES and E21 grows linearly with excitation power. However, we observe anomalous behavior of FES with temperature. While PL intensity of E11 and E21 decrease with increasing temperature, FES transition becomes stronger initially and then quenches-off slowly (till 40K). Though it appears as a distinct peak at about 20 K, its maximum is around 7 - 13 K.

Photocatalytic properties of KBiO(3) and LiBiO(3) with tunnel structures

In the present study, KBiO(3) is synthesized by a standard oxidation technique while LiBiO(3) is prepared by hydrothermal method. The synthesized catalysts are characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), BET surface area analysis and Diffuse Reflectance Spectroscopy (DRS). The XRD patterns suggest that KBiO(3) crystallizes in the cubic structure while LiBiO(3) crystallizes in orthorhombic structure and both of these adopt the tunnel structure. The SEM images reveal micron size polyhedral shaped KBiO(3) particles and rod-like or prismatic shape particles for LiBiO(3). The band gap is calculated from the diffuse reflectance spectrum and is found to be 2.1 eV and 1.8 eV for KBiO(3) and LiBiO(3), respectively. The band gap and the crystal structure data suggest that these materials can be used as photocatalysts. The photocatalytic activity of KBiO(3) and LiBiO(3) are evaluated for the degradation of anionic and cationic dyes, respectively, under UV and solar radiations.

Two new 1D chains of Ni(2)Na(2) heterometallic double half-cubane building units: Synthesis, structures and variable temperature magnetic study

An equimolar mixture of Ni(NO(3))(2)center dot 6H(2)O and pyridine-2-aldehyde with two equivalents of NaN(3) in methanol in the presence of NaOMe resulted in the formation of light green precipitate which upon crystallization from dimethylformamide (DMF) yielded light green single crystals [{Ni(2)Na(2)(pic)(4)(N(3))(2)(H(2)O)(2)(MeOH)}center dot MeOH center dot 3H(2)O](n) (1) and [{Ni(2)Na(2)(pic)(4)(N(3))(2)(H(2)O)(4)}center dot 2DMF center dot H(2)O](n) (2) (pic = pyridine-2-carboxylate) at room temperature and high temperature (100 degrees C), respectively. Variable temperature magnetic studies revealed the existence of overall ferromagnetic behaviour with J approximate to + 10 cm(-1) and D approximate to -2 to -7 cm(-1) for 1 and 2, respectively. Negative D values as well as variation of D upon slight distortion of structure by varying reaction temperature were observed. The X-band Electron Paramagnetic Resonance (EPR) spectra of both 2 and 3 were recorded below 50 K. The structural distortion was also implicated from the EPR spectra. Density Functional Theory (DFT) calculations on both complexes were performed in two different ways to corroborate the magnetic results. Considering only Ni(2)(II) dimeric unit, results were J = + 20.65 cm(-1) and D = -3.16 cm(-1) for 1, and J = +24.56 cm(-1) and D = -4.67 cm(-1) for 2. However, considering Ni(2)(II)Na(2)(I) cubane as magnetic core the results were J = +16.35 cm(-1) (1), +19.54 cm(-1) (2); D = -3.05 cm(-1) (1), -4.25 cm(-1) (2).

Guided wave based detection of damage in honeycomb core sandwich structures

We report on the Lamb wave type guided wave propagation in honeycomb core sandwich structures. An experimental study supported by theoretical evaluation of the guided wave characteristics is presented that proves the potential of Lamb wave type guided wave for detection of damage in sandwich structures. A sandwich panel is fabricated with planar dimension of 600 mm x 600 mm, having a core thickness of 7 mm, cell size of 5 mm and 0.1 mm thick aluminum face sheets. Thin piezoelectric patch actuators and sensors are used to excite and sense a frequency band limited guided wave with a central frequency. A linear phased array of piezoelectric patch actuators is used to achieve higher signal strength and directivity. Group velocity dispersion curves and corresponding frequency response of sensed signal are obtained experimentally. Linearity between the excitation signal amplitude and the corresponding sensed signal amplitude is found for certain range of parameters. The nature of damping present in the sandwich panel is monitored by measuring the sensor signal amplitude at various different distances measured from the center of the linear phased array. Indentation and low velocity impact induced damages of increasing diameter covering several honeycomb cells are created. Crushing of honeycomb core with rupture of face sheet is observed while introducing the damage. The damages are then detected experimentally by pitch-catch interrogation with guided waves and wavelet transform of the sensed signal. Signal amplitudes are analyzed for various different sizes of damages to differentiate the damage size/severity. Monotonic changes in the sensor signal amplitude due to increase in the damage size has been established successfully. With this approach it is possible to locate and monitor the damages with the help of phased array and by tracking the wave packets scattered from the damages. (C) 2012 Elsevier Ltd. All rights reserved.

Completely random nanoporous Cu4O3-CuO-C composite thin films for potential application as multiple channel photonic band gap based filter in the telecommunication wavelengths

In 2003, Babin et al. theoretically predicted (J. Appl. Phys. 94:4244, 2003) that fabrication of organic-inorganic hybrid materials would probably be required to implement structures with multiple photonic band gaps. In tune with their prediction, we report synthesis of such an inorganic-organic nanocomposite, comprising Cu4O3-CuO-C thin films that experimentally exhibit the highest (of any known material) number (as many as eleven) of photonic band gaps in the near infrared. On contrary to the report by Wang et al. (Appl. Phys. Lett. 84:1629, 2004) that photonic crystals with multiple stop gaps require highly correlated structural arrangement such as multilayers of variable thicknesses, we demonstrate experimental realization of multiple stop gaps in completely randomized structures comprising inorganic oxide nanocrystals (Cu4O3 and CuO) randomly embedded in a randomly porous carbonaceous matrix. We report one step synthesis of such nanostructured films through the metalorganic chemical vapor deposition technique using a single source metalorganic precursor, Cu-4(deaH)(dea)(oAc)(5) a <...aEuro parts per thousand(CH3)(2)CO. The films displaying multiple (4/9/11) photonic band gaps with equal transmission losses in the infrared are promising materials to find applications as multiple channel photonic band gap based filter for WDM technology.

Transition and acoustic response of recirculation structures in an unconfined co-axial isothermal swirling flow

This paper reports the first observations of transition from a pre-vortex breakdown (Pre-VB) flowreversal to a fully developed central toroidal recirculation zone in a non-reacting, double-concentric swirling jet configuration and its response to longitudinal acoustic excitation. This transition proceeds with the formation of two intermediate, critical flow regimes. First, a partially penetrated vortex breakdown bubble (VBB) is formed that indicates the first occurrence of an enclosed structure as the centre jet penetration is suppressed by the growing outer roll-up eddy; resulting in an opposed flow stagnation region. Second, a metastable transition structure is formed that marks the collapse of inner mixing vortices. In this study, the time-averaged topological changes in the coherent recirculation structures are discussed based on the non-dimensional modified Rossby number (Ro(m)) which appears to describe the spreading of the zone of swirl influence in different flow regimes. Further, the time-mean global acoustic response of pre-VB and VBB is measured as a function of pulsing frequency using the relative aerodynamic blockage factor (i.e., maximum radial width of the inner recirculation zone). It is observed that all flow modes except VBB are structurally unstable as they exhibit severe transverse radial shrinkage (similar to 20%) at the burner Helmholtz resonant modes (100-110 Hz). In contrast, all flow regimes show positional instability as seen by the large-scale, asymmetric spatial shifting of the vortex core centres. Finally, the mixing transfer function M (f) and magnitude squared coherence lambda(2)(f) analysis is presented to determine the natural couplingmodes of the system dynamic parameters (u', p'), i.e., local acoustic response. It is seen that the pre-VB flow mode exhibits a narrow-band, low pass filter behavior with a linear response window of 100-105 Hz. However, in the VBB structure, presence of critical regions such as the opposed flow stagnation region alters the linearity range with the structure showing a response even at higher pulsing frequencies (100-300 Hz). (C) 2013 AIP Publishing LLC.

Photovoltaic structures using thermally evaporated SnS and CdS thin films

Polycrystalline tin sulfide thin films were prepared by thermal evaporation technique. The films grown at substrate temperature of 300 degrees C had an orthorhombic crystal structure with strong preferred orientation along (111) plane. Electrical resistivity of the deposited films was about 32.5 Omega cm with a direct optical band gap of 1.33 eV. Carrier concentration and mobility of charge carriers estimated from the Hall measurement were found to be 6.24 x 10(15) cm(-3) and 30.7 cm(2)V(-1) s(-1) respectively. Heterojunction solar cells were fabricated in superstrate configuration using thermally evaporated SnS as an absorber layer and CdS, In: CdS as window layer. The resistivity of pure CdS thin film of a thickness of 320 nm was about 1-2 Omega cm and was reduced to 40 x 10(-3) Omega cm upon indium doping. The fabricated solar cells were characterized using solar simulator. The solar cells with indium doped CdS window layer showed improved performance as compared to pure CdS window layer. The best device had a conversion efficiency of 0.4% and a fill factor of 33.5%. (C) 2013 Elsevier B.V. All rights reserved.

Valence band electronic structure of Nd1-xYxMnO3 using X-ray absorption, photoemission and GGA plus U calculations

The electronic structures of Nd1-xYxMnO3 (x=0-0.5) were studied using X-ray absorption near-edge structure (XANES) at the Mn L-3,L-2- and O K-edge along with valence-band photoemission spectroscopy (VB-PES). The systematic increase in white-line intensity of the Mn L-3,L-2-edge with doping, suggests a decrease in the occupancy of Mn 3d orbitals. The O K-edge XANES shows a depletion of unoccupied states above the Fermi energy. The changes in the O K-edge spectra due to doping reflects an increase in the Jahn-Teller distortion. The VB-PES shows broadening of the features associated with Mn 3d and O 2p hybridized states and the shift of these features to a slightly higher binding energy in agreement with our GGA + U calculations. The system shows a net shift of the occupied and unoccupied states away from the Fermi energy with doping. The shift in theoretical site-projected density of states of x=0.5 composition with respect to x=0 suggest a subtle change from a charge transfer to Mott-Hubbard type insulator. (C) 2013 Elsevier B.V. All rights reserved.

A MICROMACHINED WIDE-BAND IN-PLANE SINGLE-AXIS CAPACITIVE ACCELEROMETER WITH A DISPLACEMENT-AMPLIFYING COMPLIANT MECHANISM

With the premise that electronic noise dominates mechanical noise in micromachined accelerometers, we present here a method to enhance the sensitivity and resolution at kHz bandwidth using mechanical amplification. This is achieved by means of a Displacement-amplifying Compliant Mechanism (DaCM) that is appended to the usual sensing element comprising a proof-mass and a suspension. Differential comb-drive arrangement is used for capacitive-sensing. The DaCM is designed to match the stiffness of the suspension so that there is substantial net amplification without compromising the bandwidth. A spring-mass-lever model is used to estimate the lumped parameters of the system. A DaCM-aided accelerometer and another without a DaCM-both occupying the same footprint-are compared to show that the former gives enhanced sensitivity: 8.7 nm/g vs. 1.4 nm/g displacement at the sensing-combs under static conditions. A prototype of the DaCM-aided micromachined acclerometer was fabricated using bulk-micromachining. It was tested at the die-level and then packaged on a printed circuit board with an off-the-shelf integrated chip for measuring change in capacitance. Under dynamic conditions, the measured amplification factor at the output of the DaCM was observed to be about 11 times larger than the displacement of the proof-mass and thus validating the concept of enhancing the sensitivity of accelerometers using mechanical amplifiers. The measured first in-plane natural frequency of the fabricated accelerometer was 6.25 kHz. The packaged accelerometer with the DaCM was measured to have 26.7 mV/g sensitivity at 40 Hz.

DLTS analysis of amphoteric interface defects in high-TiO2 MOS structures prepared by sol-gel spin-coating

High-kappa TiO2 thin films have been fabricated from a facile, combined sol-gel spin - coating technique on p and n type silicon substrate. XRD and Raman studies headed the existence of anatase phase of TiO2 with a small grain size of 18 nm. The refractive index `n' quantified from ellipsometry is 2.41. AFM studies suggest a high quality, pore free films with a fairly small surface roughness of 6 angstrom. The presence of Ti in its tetravalent state is confirmed by XPS analysis. The defect parameters observed at the interface of Si/TiO2 were studied by capacitance - voltage (C - V) and deep level transient spectroscopy (DLTS). The flat - band voltage (V-FB) and the density of slow interface states estimated are -0.9, -0.44 V and 5.24x10(10), 1.03x10(11) cm(-2); for the NMOS and PMOS capacitors, respectively. The activation energies, interface state densities and capture cross -sections measured by DLTS are E-V + 0.30, E-C - 0.21 eV; 8.73x10(11), 6.41x10(11) eV(-1) cm(-2) and 5.8x10(-23), 8.11x10(-23) cm(2) for the NMOS and PMOS structures, respectively. A low value of interface state density in both P-and N-MOS structures makes it a suitable alternate dielectric layer for CMOS applications. And also very low value of capture cross section for both the carriers due to the amphoteric nature of defect indicates that the traps are not aggressive recombination centers and possibly can not contribute to the device operation to a large extent. (C) 2015 Author(s).

Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation

We present a method to experimentally characterize the gain filter and calculate a corresponding parabolic gain bandwidth of lasers that are described by "class A" dynamics by solving the master equation of spectral condensation for Gaussian spectra. We experimentally determine the gain filter, with an equivalent parabolic gain bandwidth of up to 51 nm, for broad-band InGaAs/GaAs quantum well gain surface-emitting semiconductor laser structures capable of producing pulses down to 60 fs width when mode-locked with an optical Stark saturable absorber mirror. © 2010 Optical Society of America.