914 resultados para Assisted PFMT
Resumo:
Thin films of titanium dioxide have been deposited using ion assisted deposition with oxygen ions in the energy range 100�500 eV and current densities up to 100 ?A/cm2. It has been observed that the refractive index of the films increases up to 300 eV and the extinction coefficient increased only nominally up to 300 eV. Optical band gap calculations have shown a strong dependence of the gap on the energy of incident ions. Beyond a critical energy and current density of the ions the refractive index and extinction coefficient of the films start deteriorating. It has also been found that beyond the critical values the optical band gap value decreases. The maximum refractive index obtained was 2.49 at an energy of 300 eV and 50 ?A/cm2 current density. Post?deposition annealing of the films at 500?°C resulted in a slight increase in refractive index without affecting the extinction coefficient. X?ray diffraction studies revealed a monophasic anatase structure in these films. ?
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Clustered VLIW architectures solve the scalability problem associated with flat VLIW architectures by partitioning the register file and connecting only a subset of the functional units to a register file. However, inter-cluster communication in clustered architectures leads to increased leakage in functional components and a high number of register accesses. In this paper, we propose compiler scheduling algorithms targeting two previously ignored power-hungry components in clustered VLIW architectures, viz., instruction decoder and register file. We consider a split decoder design and propose a new energy-aware instruction scheduling algorithm that provides 14.5% and 17.3% benefit in the decoder power consumption on an average over a purely hardware based scheme in the context of 2-clustered and 4-clustered VLIW machines. In the case of register files, we propose two new scheduling algorithms that exploit limited register snooping capability to reduce extra register file accesses. The proposed algorithms reduce register file power consumption on an average by 6.85% and 11.90% (10.39% and 17.78%), respectively, along with performance improvement of 4.81% and 5.34% (9.39% and 11.16%) over a traditional greedy algorithm for 2-clustered (4-clustered) VLIW machine. (C) 2010 Elsevier B.V. All rights reserved.
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Nanostructured carbon nitride films were prepared by pyrolysis assisted chemical vapour deposition. A two zone furnace with a uniform temperature over a length of 20 cm in both the zones was built. The precursor Azabenzimidazole (C6H5N3) taken in a quartz tube was evaporated at zone A and pyrolysed at zone B at a temperature of 800 degrees C. The FTIR spectrum of the prepared sample shows peaks at 1272 cm(-1) and 1591 cm(-1) corresponding to C-N stretching and C=N respectively, which confirms the bonding of nitrogen with carbon. Raman D and G peaks are observed at 1357 cm(-1) and 1560 cm(-1) respectively. X-ray photoelectron spectroscopy (XPS) shows the formation of pi bonding between carbon and nitrogen atoms. These observations along with XRD analysis show the formation of crystallites of alpha-C3N4 and beta-C3N4 in the background of graphitic C3N4. The size of the nanocrystals estimated from the SEM images is similar to 100 nm.
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Planar triazinium cationic species, from VO2+-assisted cyclization of 1-(2-thiazolylazo)-2-naphthol, shows efficient DNA intercalative binding, visible light-induced anaerobic plasmid DNA photocleavage activity and photocytotoxicity in HeLa and MCF-7 cancer cells by an apoptotic pathway with selective localization of the compound in the nucleus as evidenced from the nuclear staining and confocal imaging.
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One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (similar to 8%), the dots formed from the Strannski-Krastanow (S-K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.
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The present investigation explores the adaptability of a microwave assisted route to obtain silver nanoparticles by the reduction of AgNO3 with vanillin, an environmentally benign material. Anionic surfactants such as AOT and SDS were used separately for encapsulating AgNPs and their role was compared. The UV-Visible absorption spectra present a broad SPR band consisting of two peaks suggesting the formation of silver nanoparticle with bimodal size distribution. The TEM image shows particles with spherical and hexagonal morphologies which confirms the results of UV-Vis studies. The anisotropy in the particle morphology can be attributed to the surface oxidation which in turn produces Ag@Ag2O core-shell nanostructures. Thus an intriguing feature of this system is that the obtained colloid is a mixture of AgNPs with and without Ag2O layers. Studies on the influence of pH on the stability of the synthesized nanoparticles revealed that the presence of excess Ag2O layers has a profound influence on it. Ag2O layers can be removed from AgNPs' surface by changing the solution pH to the acidic regime. The present study attests the enhanced ability of AOT in stabilizing the AgNPs in aqueous media. (C) 2011 Elsevier B.V. All rights reserved.
Resumo:
Very rapid (within 5 min), selective, single-step deoxygenation of layer- and chain-containing oxides, MoO3, CrO3, V2O5, alpha-VOPO4 . 2H(2)O and Ag6Mo10O33 has been accomplished using graphitic carbon in a microwave-assisted reaction. The products were found to be MoO2, Cr2O3, VO2, VPO4 and a mixture of (Ag + MoO2), respectively. Products were characterised by X-ray diffraction (XRD), differential scanning calorimetry (DSC), IR and electron paramagnetic resonance (EPR) spectroscopies. Although conventional methods of preparing these materials are tedious, the present method is simple, fast and yields very homogeneous products of good crystallinity. Our results reveal that while layer- and chain-containing oxides undergo rapid microwave-assisted carbothermal reduction, the non-layered materials do not. The high structural selectivity of these reactions is suggestive of the topochemical nature of the fast reduction process.
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Photoluminescence (PL) of high quality GaN epitaxial layer grown on beta-Si3N4/Si (1 1 1) substrate using nitridation-annealing-nitridation method by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated in the range of 5-300 K. Crystallinity of GaN epilayers was evaluated by high resolution X-ray diffraction (HRXRD) and surface morphology by Atomic Force Microscopy (AFM) and high resolution scanning electron microscopy (HRSEM). The temperature-dependent photoluminescence spectra showed an anomalous behaviour with an `S-like' shape of free exciton (FX) emission peaks. Distant shallow donor-acceptor pair (DAP) line peak at approximately 3.285 eV was also observed at 5 K, followed by LO replica sidebands separated by 91 meV. The activation energy of the free exciton for GaN epilayers was also evaluated to be similar to 27.8 +/- 0.7 meV from the temperature-dependent PL studies. Low carrier concentrations were observed similar to 4.5 +/- 2 x 10(17) Cm-3 by measurements and it indicates the silicon nitride layer, which not only acts as a growth buffer layer, but also effectively prevents Si diffusion from the substrate to GaN epilayers. The absence of yellow band emission at around 2.2 eV signifies the high quality of film. The tensile stress in GaN film calculated by the thermal stress model agrees very well with that derived from Raman spectroscopy. (C) 2010 Elsevier B.V. All rights reserved.
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A fast, efficient and novel method of preparation of hydroxyapatite using microwaves has been described.
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We report the structural and optical properties of a-plane GaN film grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction was used to determine the out-of-plane and in-plane epitaxial relation of a-plane GaN to r-plane sapphire. Low-temperature photoluminescence emission was found to be dominated by basal stacking faults along with near-band emission. Raman spectroscopy shows that the a-GaN film is of reasonably good quality and compressively strained. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Resumo:
Controlled pyrolysis of Al(OBus)(3), Zr(OPrn)(4) and their mixtures in ethyl acetate induced using microwaves of 2.45 GHz frequency has been carried out. Microwave irradiation yields second-stage precursors for the preparation of respective oxides and their composites. It is observed that the microwave irradiation has a directive influence on the morphology of the ultimate oxide products. Al2O3, ZrO2 and the two composites 90% Al2O3-10% ZrO2 and 90% ZrO2-10% Al2O3 are also found to be sintered to very high densities within 35 min of microwave irradiation by the use of beta-SiC as a secondary susceptor.
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Schiff base vanadium(IV) complexes of phenyl esters of the two acidic amino acids, i.e., aspartic and glutamic acid, were synthesized. The phenyl esters of these amino acids were synthesized by conventional method whereas the Schiff base vanadium(IV) complexes were synthesized using microwave irradiation. The complexes were characterized by spectroscopic tools such as IR, 1H NMR, mass (ES), ESR, and UV visible spectroscopy. All the complexes were studied for antibacterial and antifungal activity and found to be moderately active.
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A simple, novel, and fast method of preparation of metal nitride powders (GaN, TiN, and VN) using microwave-assisted carbothermal reduction and nitridation has been demonstrated. The procedure uses the respective oxides and amorphous carbon powder as the starting materials. Ammonia gas is found to be more effective in nitridation than high-purity N-2 gas. Complete nitridation is achieved by the use of a slight excess of amorphous carbon. Metals themselves are not found to be effectively nitrided. The products were characterized using XRD, TEM, and SAED and found to possess good crystallinity and phase purity. The method can be of general applicability for the preparation of metal nitrides.
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The reaction of n-BuSn(O)OH](n), and 9-hydroxy-9-fluorenecarboxylic acid in the presence of p-X-C6H4-OH (X = F, Br) afforded hydroxyl-rich hexameric organostannoxane prismanes. The crystal structures of these prismanes reveal guest-assisted supramolecular structures. Self-assembly of these compounds on a mica surface affords organooxotin nanotubules.