Total Factor Productivity Growth and Output Growth in Indian Electronics Industry in the Liberalization Era: An Empirical Examination

This paper analyses the efficiency and productivity growth of Electronics industry, which is considered one of the vibrant and rapidly growing manufacturing industry sub-sectors of India in the liberalization era since 1991. The main objective of the paper is to examine the extent and growth of Total Factor Productivity (TFP) and its components namely, Technical Efficiency Change (TEC) and Technological Progress (TP) and its contribution to total output growth. In this study, the electronics industry is broadly classified into communication equipments, computer hardware, consumer electronics and other electronics, with the purpose of performing a comparative analysis of productivity growth for each of these sub-sectors for the time period 1993-2004. The paper found that the sub-sectors have improved in terms of economies of scale and contribution of capital.The change in technical efficiency and technological progress moved in reverse directions. Three of the four industry witnessed growth in the output primarily due to TFPG and the contribution of input growth to output growth had been negative/negligible, except for Computer hardware where contribution from both input growth and TFPG to output growth were prominent. The paper explored the possible reasons that addressed the issue of low technical efficiency and technological progress in the industry.

Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics

A highly transparent all ZnO thin film transistor (ZnO-TFT) with a transmittance of above 80% in the visible part of the spectrum, was fabricated by direct current magnetron sputtering, with a bottom gate configuration. The ZnO-TFT with undoped ZnO channel layers deposited on 300 nm Zn0.7Mg0.3O gate dielectric layers attains an on/off ratio of 104 and mobility of 20 cm2/V s. The capacitance-voltage (C−V) characteristics of the ZnO-TFT exhibited a transition from depletion to accumulation with a small hysteresis indicating the presence of oxide traps. The trap density was also computed from the Levinson’s plot. The use of Zn0.7Mg0.3O as a dielectric layer adds additional dimension to its applications. The room temperature processing of the device depicts the possibility of the use of flexible substrates such as polymer substrates. The results provide the realization of transparent electronics for next-generation optoelectronics.

Thermal Management of Electronics Using PCM-Based Heat Sink Subjected to Cyclic Heat Load

Designing a heat sink based on a phase change material (PCM) under cyclic loading is a critical issue. For cyclic operation, it is required that the fraction of the PCM melting during the heating cycle should completely resolidify during the cooling period, so that that thermal storage unit can be operated for an unlimited number of cycles. Accordingly, studies are carried out to find the parameters influencing the behavior of a PCM under cyclic loading. A number of parameters are identified in the process, the most important ones being the duty cycle and heat transfer coefficient (h) for cooling. The required h or the required cooling period for complete resolidification for infinite cyclic operation of a conventional PCM-based heat sink is found to be very high and unrealistic with air cooling from the surface. To overcome this problem, the conventional design is modified where h and the area exposed to heat transfer can be independently controlled. With this arrangement, the enhanced area provided for cooling keeps h within realistic limits. Analytical investigation is carried out to evaluate the thermal performance of this modified PCM-based heat sink in comparison to those with conventional designs. Experiments are also performed on both the conventional and the modified PCM-based heat sinks to validate the new findings.