退火对电子束热蒸发Al2O3薄膜性能影响的实验研究

用电子束热蒸发方法镀制了Al2O3材料的单层膜，对它们在空气中进行了250～400℃的高温退火。对样品的透射率光谱曲线进行了测量，计算了样品的消光系数、折射率和截止波长。通过X射线衍射仪(XRD)测量分析了薄膜的微观结构，采用表面轮廓仪测量了样品的表面均方根粗糙度。结果发现随着退火温度的提高光学损耗下降，薄膜结构在退火温度为400℃时仍然为无定形态，样品的表面粗糙度随退火温度的升高而增加。引起光学损耗下降起主导作用的是吸收而不是散射，吸收损耗的下降主要是由于退火使材料吸收空气中的氧而进一步氧化，从而使薄膜

Al2O3和Cr过渡层对Ag膜光学性质及其附着力的影响

研究了在玻璃基底上镀制Al2O3和Cr过渡层对Ag膜反射率及附着力的影响.分光光度计测试了Ag膜的反射率,结果表明,与Cr过渡层相比,Al2O3过渡层对Ag膜反射率的降低相对较小;而且,随着Al2O3厚度的增加,Ag膜的反射率先增大后减小.XRD与AES测试表明,引入Al2O3或Cr可明显细化Ag晶粒,减弱Ag膜（111）织构;Al2O3作过渡层时,Al原子向Ag层中扩散显著;而Cr作过渡层时,只有少量Cr原子扩散进入Ag层.因此,Al2O3作过渡层能显著增强薄膜与玻璃基体之间的附着力.

Working pressure dependence of properties of Al2O3 thin films prepared by electron beam evaporation

The effects of working pressure on properties of Al2O3 thin films are investigated. Transmittance of the Al2O3 thin film is measured by a Lambda 900 spectrometer. Laser-induced damage threshold (LIDT) is measured by a Nd:YAG laser at 355nm with a pulse width of 7ns. Microdefects were observed under a Nomarski microscope. The samples are characterized by optical properties and defect, as well as LIDT under the 355 nm Nd: YAG laser radiation. It is found that the working pressure has fundamental effect on the LIDT. It is the absorption rather than the microdefect that plays an important role on the LID T of Al2O3 thin film.

Desenvolvimento de revestimentos de óxidos mistos nanoestruturados de TiO2/Al2O3 em substratos metálicos de aço AISI 1020 e estudo das propriedades anticorrosivas

Sóis liofilizados precursores de Al2O3/TiO2, foram preparados via tecnologia sol-gel, com diferentes porcentagens de óxido de titânio (5%, 10%, 15% e 20%, em massa). Os sóis liofilizados foram caracterizados por meio de diversas análises, com o intuito de obter informações sobre o comportamento térmico, fases presentes, tamanho de partícula, composição e uniformidade das amostras. Os resultados obtidos indicam que os sóis apresentam as fases boemita e anatase, com partículas de tamanho nanométrico, tem composições muito similares quando analisadas em pontos distintos, átomos bem dispersos e distribuídos. Após esta etapa, amostras de aço AISI 1020 foram recobertas com estes sóis através do método dip-coating, o comportamento corrosivo foi estudado por meio de ensaios eletroquímicos e a morfologia das camadas, analisadas por meio de microscopias. Observou-se que as camadas eram uniformes e recobriam por completo toda a superfície das amostras, os ensaios de polarização indicaram melhorias no potencial eletroquímico para amostras recobertas, em comparação com amostras de aço sem recobrimento. O monitoramento de circuito aberto apresentou bons ajustes, indicando bom comportamento da camada. Notou-se pelas microscopias a presença de pontos de corrosão em algumas amostras antes dos ensaios, suspeitando-se que os resultados obtidos teriam sido melhores, caso houvesse um maior controle do processo de recobrimento.

Failure mechanisms and toughness of Al2O3 ductile-particle toughened ceramics and SiC fibre-ceramic composites

The development of high performance ceramics and ceramic composites often relies on assumptions about their behaviour during loading and at failure. A crucial influence on the mechanical properties of these materials is the degree of sub-critical cracking, which post mortem investigations cannot adequately reveal. Hence a clear picture of the dynamic micromechanisms of cracking is required if applications of fracture and damage mechanics to theoretical models is to be meaningful.

Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene

We report on the topographical and electrical characterisations of 1 nm thick Al2O3 dielectric films on graphene. The Al 2O3 is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O2 atmosphere. The Al 2O3 layer presents no pinholes and is homogeneous enough to act as a tunnel barrier. A resistance-area product in the mega-ohm micrometer-square range is found. Comparatively, the growth of Al 2O3 by evaporation does not lead to well-wetted films on graphene. Application of this high quality sputtered tunnel barrier to efficient spin injection in graphene is discussed. © 2012 American Institute of Physics.