Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

八种气体中28种杂质全分析技术及质量监控

于G批量导入至Hzhangdi

电子级气体N2、H2、O2、Ar、He、HCl、CO2、NH3 28种杂质分析技术及质量监控

于G批量导入至Hzhangdi

Uniform mems chip temperatures in the nucleate boiling heat transfer region by selecting suitable, medium boiling number range

The not only lower but also uniform MEMS chip temperatures can he reached by selecting suitable boiling number range that ensures the nucleate boiling heat transfer. In this article, boiling heat transfer experiments in 10 silicon triangular microchannels with the hydraulic diameter of 55.4 mu m were performed using acetone as the working fluid, having the inlet liquid temperatures of 24-40 degrees C, mass fluxes of 96-360 kg/m(2)s, heat fluxes of 140-420 kW/m(2), and exit vapor mass qualities of 0.28-0.70. The above data range correspond to the boiling number from 1.574 x 10(-3) to 3.219 x 10(-3) and ensure the perfect nucleate boiling heat transfer region, providing a very uniform chip temperature distribution in both streamline and transverse directions. The boiling heat transfer coefficients determined by the infrared radiator image system were found to he dependent on the heat Axes only, not dependent on the mass Axes and the vapor mass qualities covering the above data range. The high-speed flow visualization shows that the periodic flow patterns take place inside the microchannel in the time scale of milliseconds, consisting of liquid refilling stage, bubble nucleation, growth and coalescence stage, and transient liquid film evaporation stage in a full cycle. The paired or triplet bubble nucleation sites can occur in the microchannel corners anywhere along the flow direction, accounting for the nucleate boiling heat transfer mode. The periodic boiling process is similar to a series of bubble nucleation, growth, and departure followed by the liquid refilling in a single cavity for the pool boiling situation. The chip temperature difference across the whole two-phase area is found to he small in a couple of degrees, providing a better thermal management scheme for the high heat flux electronic components. Chen's [11 widely accepted correlation for macrochannels and Bao et al.'s [21 correlation obtained in a copper capillary tube with the inside diameter of 1.95 mm using R11 and HCFC123 as working fluids can predict the present experimental data with accepted accuracy. Other correlations fail to predict the correct heat transfer coefficient trends. New heat transfer correlations are also recommended.

环形聚苯乙烯稀溶液性质的研究

本工作对环形聚苯乙烯的溶液性质作了系统研究。工作中运用了各种溶液性质的研究方法如激光光散射、凝胶色谱和溶液粘度。对不同分子量(1 * 10~4 ～ 2.3 * 10~5)的窄分布环形聚苯乙烯样品在良溶剂甲苯，不良溶剂丁酮以及不同温度的环已烷中第二维利系数的测定发现，在良溶剂中环形聚苯乙烯的第二维利系数小于线形聚苯乙烯，在不良溶剂中两者第二维利系数相近，而环形聚苯乙烯在环已烷中的θ温度为30 ℃，比线形聚苯乙烯的θ温度低4.5 ℃。这些结果表明环形聚苯乙烯分子间排斥体积效应小于线形分子，而分子内排斥体积效应略大于线形分子。环形聚苯乙烯在甲苯(25 ℃)和丁酮(25 ℃)中的第二维利系数与分子量的关系分别为甲苯 A_(2r) = 1.28 * 10~(-2) (M-bar)_w~(-0.283)丁酮 A_Z(2r) = 5.06 * 10~(-3) (M-bar)_w~(-0.273)通过测定环形聚苯乙烯系列样品在θ溶剂，良溶剂和不良溶剂中的特性粘数，确定了环形聚苯乙烯在多种溶剂中的Mark-Houwink方程，在θ溶剂中的Mark-Houwink方程为[η]_r = 5.102 * 10~(-2) (M-bar)_w~(0.508) 环已烷30 ℃应用粘度结果讨论了环形聚苯乙烯的粘度扩展因子、等效球半径，均方回转半径以及穿流效应，并与线形聚苯乙烯作了比较。

In_(0.28)Ga_(0.72)As/GaAs量子点超晶格的生长

于2010-11-23批量导入

Fe-57 Mossbauer spectroscopic and magnetic studies of R3Fe29-xVx (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy)

Mossbauer spectra for Fe atoms in the series of R3Fe29-xVx (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy) compounds were collected at 4.2 K. The ratio of 14.5 T/mu(B) between the average hyperfine field B-hf and the average Fe magnetic moment mu(Fe)(MS), obtained from our data, in Y3Fe29-xVx is in agreement with that deduced from the RxTy alloys by Gubbens et al. The average Fe magnetic moments mu(Fe)(MS) in these compounds at 4.2 K, deduced from our Mossbauer spectroscopic studies, are in accord with the results of magnetization measurement. The average hyperfine field of the Fe sites for R3Fe29-xVx at 4.2 K increases with increasing values of the rare earth effective spin (g(J) - 1) J, which indicates that there exists a transferred spin polarization induced by the neighboring rare earth atom.

高电荷态离子~(129)Xe~(28+)与Au和Mo表面作用产生的X射线谱

研究了高电荷态离子129Xe28+轰击金属Au和Mo表面产生的特征X射线谱。实验结果表明,在入射离子的电荷态和能量相同的条件下,对于核电荷数较小、原子质量较轻的靶原子,只有其内壳层的电子才能被激发而产生X射线,而核电荷数较大、原子质量较重的靶原子只有其较外壳层的电子能被激发而产生X射线。特征X射线的产额随入射离子动能的增加而增加。

~(27,28)P+~(28)Si总反应截面增强及可能相关的机制

测量了27,28P和相应同中子异位素在28Si靶上的中能反应截面.测得N=12和13同中子异位素的反应截面在Z=15处突然增大.对Z≤14同中子异位素和28P的实验数据结果可以用改进的光学极限近似的Glauber理论很好地描述.28P的反应截面能够用扩大核芯以改进的Glauber理论来解释.但是,用改进光学极限和少体近似的Glauber理论却低估了27P的实验数据.理论分析表明,扩大的核芯加质子晕可能是响应27P+28Si反应截面增强的机制.