中国濒危淡水鱼类致危成因分析

中国1000多种淡水鱼类因受水工建设、围湖造田、乱伐滥垦等改变和破坏水域环境、酷渔滥捕、水体污染、不合理引种、法制不全及执法不力等原因导致部分鱼类濒危。初步确定为92种,分属9目、24科、78属,根据程度分成四个等级,绝灭4种、稀有23种、濒危28种、渐危37种。

28 Gb/s unequalized PAM3 modulation of an 850 nm VCSEL for next-generation datacommunication links

An 850 nm vertical-cavity surface-emitting laser is modulated at 28 Gb/s using pulseamplitude modulation with three levels. Unequalized transmission over 100 m of OM3 MMF is demonstrated, with advantages over NRZ and PAM4 modulation. © OSA 2012.

Experimental demonstration of a transparent graphene millimetre wave absorber with 28% fractional bandwidth at 140 GHz.

The development of transparent radio-frequency electronics has been limited, until recently, by the lack of suitable materials. Naturally thin and transparent graphene may lead to disruptive innovations in such applications. Here, we realize optically transparent broadband absorbers operating in the millimetre wave regime achieved by stacking graphene bearing quartz substrates on a ground plate. Broadband absorption is a result of mutually coupled Fabry-Perot resonators represented by each graphene-quartz substrate. An analytical model has been developed to predict the absorption performance and the angular dependence of the absorber. Using a repeated transfer-and-etch process, multilayer graphene was processed to control its surface resistivity. Millimetre wave reflectometer measurements of the stacked graphene-quartz absorbers demonstrated excellent broadband absorption of 90% with a 28% fractional bandwidth from 125-165 GHz. Our data suggests that the absorbers' operation can also be extended to microwave and low-terahertz bands with negligible loss in performance.

Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

八种气体中28种杂质全分析技术及质量监控

于G批量导入至Hzhangdi

电子级气体N2、H2、O2、Ar、He、HCl、CO2、NH3 28种杂质分析技术及质量监控

于G批量导入至Hzhangdi

侵蚀环境人工灌木林土壤活性有机碳与碳库管理指数演变

采用时空互代法,以黄土丘陵区纸坊沟流域生态恢复过程中不同年限的人工柠条和沙棘林为研究对象,选取坡耕地和天然侧柏林为对照,分析了植被恢复过程中土壤有机碳(TOC)、活性有机碳(LOC)、非活性有机碳(NLOC)及碳库管理指数的演变特征。结果表明,侵蚀环境下的坡耕地由于人为干扰,土壤碳库含量偏低,退耕营造柠条林可以显著增加土壤碳库各组分含量,并随恢复年限呈显著线性关系,25 a时TOC、LOC和NLOC分别较坡耕地增加271%、144%和204%,仅为侧柏林的32%、30%和29%,碳库指数和碳库管理指数较坡耕地明显增加,增幅分别达到144%和108%,仅为侧柏林的28%和43%;不同灌木林对土壤碳库管理的改善作用不同,恢复年限相同的沙棘林土壤碳库组分含量和管理指数明显高于柠条林,坡耕地营造灌木林后土壤经营和管理水平得到了显著改善,土壤系统向着良性方向转变。相关性分析表明有机碳、活性有机碳、非活性有机碳、碳库指数、碳库管理指数与土壤主要肥力因子相关性极其密切,可以作为反映生态恢复过程土壤质量演变的指标。

In_(0.28)Ga_(0.72)As/GaAs量子点超晶格的生长

于2010-11-23批量导入

高电荷态离子~(129)Xe~(28+)与Au和Mo表面作用产生的X射线谱

研究了高电荷态离子129Xe28+轰击金属Au和Mo表面产生的特征X射线谱。实验结果表明,在入射离子的电荷态和能量相同的条件下,对于核电荷数较小、原子质量较轻的靶原子,只有其内壳层的电子才能被激发而产生X射线,而核电荷数较大、原子质量较重的靶原子只有其较外壳层的电子能被激发而产生X射线。特征X射线的产额随入射离子动能的增加而增加。

~(27,28)P+~(28)Si总反应截面增强及可能相关的机制

测量了27,28P和相应同中子异位素在28Si靶上的中能反应截面.测得N=12和13同中子异位素的反应截面在Z=15处突然增大.对Z≤14同中子异位素和28P的实验数据结果可以用改进的光学极限近似的Glauber理论很好地描述.28P的反应截面能够用扩大核芯以改进的Glauber理论来解释.但是,用改进光学极限和少体近似的Glauber理论却低估了27P的实验数据.理论分析表明,扩大的核芯加质子晕可能是响应27P+28Si反应截面增强的机制.