Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency

Different approaches have arisen aiming to exceed the Shockley-Queisser efficiency limit of solar cells. Particularly, stacking QD layers allows exploiting their unique properties, not only for intermediate-band solar cells or multiple exciton generation, but also for tandem cells in which the tunability of QD properties through the capping layer (CL) could be very useful.

Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency

Different approaches have recently arisen aiming to exceed the Shockley-Queisser efficiency limit. Particularly, the use of self-organized quantum dots (QD) has been recently proposed in order to introduce new states within the barrier material, which enhances the subband gap absorption yielding a photocurrent increase. Stacking QD layers allows exploiting their unique properties for intermediate-band solar cells (SC) or tandem cells.In all these cases, tuning the QD properties by modifying the capping layer (CL) can be very useful.

Spectral study and classification of worldwide locations considering several multijunction solar cell technologies

Multi-junction solar cells are widely used in high-concentration photovoltaic systems (HCPV) attaining the highest efficiencies in photovoltaic energy generation. This technology is more dependent on the spectral variations of the impinging Direct Normal Irradiance (DNI) than conventional photovoltaics based on silicon solar cells and consequently demands a deeper knowledge of the solar resource characteristics. This article explores the capabilities of spectral indexes, namely, spectral matching ratios (SMR), to spectrally characterize the annual irradiation reaching a particular location on the Earth and to provide the necessary information for the spectral optimization of a MJ solar cell in that location as a starting point for CPV module spectral tuning. Additionally, the relationship between such indexes and the atmosphere parameters, such as the aerosol optical depth (AOD), precipitable water (PW), and air mass (AM), is discussed using radiative transfer models such as SMARTS to generate the spectrally-resolved DNI. The network of ground-based sun and sky-scanning radiometers AERONET (AErosol RObotic NETwork) is exploited to obtain the atmosphere parameters for a selected bunch of 34 sites worldwide. Finally, the SMR indexes are obtained for every location, and a comparative analysis is carried out for four architectures of triple junction solar cells, covering both lattice match and metamorphic technologies. The differences found among cell technologies are much less significant than among locations.

Building intuition of iron evolution during solar cell processing through analysis of different process models

An important aspect of Process Simulators for photovoltaics is prediction of defect evolution during device fabrication. Over the last twenty years, these tools have accelerated process optimization, and several Process Simulators for iron, a ubiquitous and deleterious impurity in silicon, have been developed. The diversity of these tools can make it difficult to build intuition about the physics governing iron behavior during processing. Thus, in one unified software environment and using self-consistent terminology, we combine and describe three of these Simulators. We vary structural defect distribution and iron precipitation equations to create eight distinct Models, which we then use to simulate different stages of processing. We find that the structural defect distribution influences the final interstitial iron concentration ([Fe-i]) more strongly than the iron precipitation equations. We identify two regimes of iron behavior: (1) diffusivity-limited, in which iron evolution is kinetically limited and bulk [Fe-i] predictions can vary by an order of magnitude or more, and (2) solubility-limited, in which iron evolution is near thermodynamic equilibrium and the Models yield similar results. This rigorous analysis provides new intuition that can inform Process Simulation, material, and process development, and it enables scientists and engineers to choose an appropriate level of Model complexity based on wafer type and quality, processing conditions, and available computation time.

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.

Commercialization of a thick film solar cell : quarterly technical progress report for April 1 - June 30, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."

Commercialization of a thick film solar cell : quarterly technical progress report for period September 1 - October 1, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."

Low-cost sprayed CdTe solar-cell research : third quarterly progress report for period February 15 - May 14, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."

Low-cost process for P-N junction-type solar cell : quarterly report 4 for May 30 - September 1, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."

Development of copper sulfide/cadmium sulfide thin-film solar cell s : third technical progress report, January 13 - April 12, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."

Development of copper sulfide/cadmium sulfide thin film solar cell s : fourth technical progress report, April 13 - July 12, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."

Amorphous thin films for solar-cell applications : final report for period September 11, 1979 - September 10, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."

Amorphous thin films for solar-cell applications : quarterly report no. 1 for September 11- December 10, 1979 /

"Work Performed Under Contract No. AC02-77CH00178."

Low-cost epitaxial techniques for solar-cell fabrication : quarterly technical progress report no. 3 for March 25 - June 24, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."

Vacuum deposited polycrystalline silicon films for solar cell applications : quarterly report for April 1 - June 30, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."