Travelling-stripe forcing generates hexagonal patterns

We study the response of Turing stripe patterns to a simple spatiotemporal forcing. This forcing has the form of a traveling wave and is spatially resonant with the characteristic Turing wavelength. Experiments conducted with the photosensitive chlorine dioxide-iodine-malonic acid reaction reveal a striking symmetry-breaking phenomenon of the intrinsic striped patterns giving rise to hexagonal lattices for intermediate values of the forcing velocity. The phenomenon is understood in the framework of the corresponding amplitude equations, which unveils a complex scenario of dynamical behaviors.

Boron adsorption in soils from the State of São Paulo, Brazil

Boron adsorption was studied in five representative soils (Rhodic Hapludox, Arenic Paleudalf and three Typic Hapludox) from the State of São Paulo, Brazil. Adsorption was higher in the clayey Oxisols, followed by the Alfisol and the coarser Oxisols. Calcium carbonate promoted an increase in the amount of adsorbed boron in all soils, with the most pronounced effect in the coarser-textured Oxisols. High correlation coefficients were found between adsorbed boron and clay and amorphous aluminum oxide contents and specific surface area (r = 0.79, 0.76 and 0.73, respectively, p < 0.01). Clay content, free aluminum oxide, and hot CaCl2 (0.01 mol L-1)-extracted boron explained 93% of the variation of adsorbed boron. Langmuir and Freundlich isotherms fitted well to the adsorbed data, and highest values for maximum boron adsorption were found in clayey soils, which were significantly correlated with contents of total, free and amorphous iron and aluminum oxides, as well with the physical attributes. Ninety four percent of the variation in the maximum adsorption could be related to the free iron content.

Dernière partie du roman de Tristan, attribuée à LUCE DU GAST et ÉLIE DE BORON.

Incomplet du commencement et de la fin. — Miniatures.

Boron, phosphorus and nitrogen fertilization in Norway spruce stands suffering from growth disturbances

Abstract

Performance Evaluation of Six-Sectored Configuration in Hexagonal WCDMA (UMTS) Cellular Network Layout

The objective of this master's thesis is to evaluate the optimum performance of sixsectored hexagonal layout of WCDMA (UMTS) network and analyze the performance at the optimum point. The maximum coverage and the maximum capacity are the main concern of service providers and it is always a challenging task for them to achieve economically. Because the optimum configuration of a network corresponds to a configuration which minimizes the number of sites required to provide a target service probability in the planning area which in turn reduces the deployment cost. The optimum performance means the maximum cell area and themaximum cell capacity the network can provide at the maximum antenna height satisfying the target service probability. Hexagon layout has been proven as the best layout for the cell deployment. In this thesis work, two different configurations using six-sectored sites have been considered for the performance comparison. In first configuration, each antenna is directed towards each corner of hexagon, whereas in second configurationeach antenna is directed towards each side of hexagon. The net difference in the configurations is the 30 degree rotation of antenna direction. The only indoor users in a flat and smooth semi-urban environment area have been considered for the simulation purpose where the traffic distribution is 100 Erl/km2 with 12.2 kbps speech service having maximum mobile speed of 3 km/hr. The simulation results indicate that a similar performance can be achieved in both the configurations, that is, a maximum of 947 m cellrange at antenna height of 49.5 m can be achieved when the antennas are directed towards the corner of hexagon, whereas 943.3 m cell range atantenna height of 54 m can be achieved when the antennas are directed towards the side of hexagon. However, from the interference point of view the first configuration provides better results. The simulation results also show that the network is coverage limited in both the uplink and downlink direction at the optimum point.

The maximum voltage drop in an on-chip power distribution network: analysis of square, triangular and hexagonal power pad arrangements

A mathematical model of the voltage drop which arises in on-chip power distribution networks is used to compare the maximum voltage drop in the case of different geometric arrangements of the pads supplying power to the chip. These include the square or Manhattan power pad arrangement, which currently predominates, as well as equilateral triangular and hexagonal arrangements. In agreement with the findings in the literature and with physical and SPICE models, the equilateral triangular power pad arrangement is found to minimize the maximum voltage drop. This headline finding is a consequence of relatively simple formulas for the voltage drop, with explicit error bounds, which are established using complex analysis techniques, and elliptic functions in particular.

Anomalous optical and electrical recovery process of photoquenched EL2 defect produced by oxygen and boron ion implantation in gallium arsenide

The optical and electrical recovery processes of the metastable state of the EL2 defect artificially created in n‐type GaAs by boron or oxygen implantation are analyzed at 80 K using optical isothermal transient spectroscopy. In both cases, we have found an inhibition of the electrical recovery and the existence of an optical recovery in the range 1.1-1.4 eV, competing with the photoquenching effect. The similar results obtained with both elements and the different behavior observed in comparison with the native EL2 defect has been related to the network damage produced by the implantation process. From the different behavior with the technological process, it can be deduced that the electrical and optical anomalies have a different origin. The electrical inhibition is due to the existence of an interaction between the EL2 defect and other implantation‐created defects. However, the optical recovery seems to be related to a change in the microscopic metastable state configuration involving the presence of vacancies

Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors.

The electrical and electroluminescence (EL) properties at room and high temperatures of oxide/ nitride/oxide (ONO)-based light emitting capacitors are studied. The ONO multidielectric layer is enriched with silicon by means of ion implantation. The exceeding silicon distribution follows a Gaussian profile with a maximum of 19%, centered close to the lower oxide/nitride interface. The electrical measurements performed at room and high temperatures allowed to unambiguously identify variable range hopping (VRH) as the dominant electrical conduction mechanism at low voltages, whereas at moderate and high voltages, a hybrid conduction formed by means of variable range hopping and space charge-limited current enhanced by Poole-Frenkel effect predominates. The EL spectra at different temperatures are also recorded, and the correlation between charge transport mechanisms and EL properties is discussed.

Flickans bön

Soitinnus: sooloääni, sekakuoro.

Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks

We report on a field-effect light emitting device based on silicon nanocrystals in silicon oxide deposited by plasma-enhanced chemical vapor deposition. The device shows high power efficiency and long lifetime. The power efficiency is enhanced up to 0.1 %25 by the presence of a silicon nitride control layer. The leakage current reduction induced by this nitride buffer effectively increases the power efficiency two orders of magnitude with regard to similarly processed devices with solely oxide. In addition, the nitride cools down the electrons that reach the polycrystalline silicon gate lowering the formation of defects, which significantly reduces the device degradation.

Hexadom : El dòmino hexagonal

L'Hexadom és un joc de taula, de creació pròpia, inspirat en el dòmino tradicional, amb el que hi comparteix l'objectiu: jugar totes les fitxes (o hexàgons en el cas de l'Hexadom). Però hi ha una diferència substancial: la seva complexitat; ja que a diferència del joc original -on s'uneixen els extrems de dues fitxes que tinguin el mateix número- a l'Hexadom s'han d'unir hexàgons entre si, com a mínim per dos dels seus costats, mantenint la coherència entre els colors.

The maximum voltage drop in an on-chip power distribution network: analysis of square, triangular and hexagonal power pad arrangements

A mathematical model of the voltage drop which arises in on-chip power distribution networks is used to compare the maximum voltage drop in the case of different geometric arrangements of the pads supplying power to the chip. These include the square or Manhattan power pad arrangement, which currently predominates, as well as equilateral triangular and hexagonal arrangements. In agreement with the findings in the literature and with physical and SPICE models, the equilateral triangular power pad arrangement is found to minimize the maximum voltage drop. This headline finding is a consequence of relatively simple formulas for the voltage drop, with explicit error bounds, which are established using complex analysis techniques, and elliptic functions in particular.