Influence of polyaniline and phthalocyanine hole-transport layers on the electrical performance of light-emitting diodes using MEH-PPV as emissive material

The influence of layer-by-layer films of polyaniline and Ni-tetrasulfonated phthalocyanine (PANI/Ni-TS-Pc) on the electrical performance of polymeric light-emitting diodes (PLED) made from (poly[2-methoxy-5-(2`-ethyl-hexyloxy)-1,4-phenylene vinylene]) (MEH-PPV) is investigated by using current versus voltage measurements and impedance spectroscopy. The PLED is composed by a thin layer of MEH-PPV sandwiched between indium tin oxide (ITO) and aluminum electrodes, resulting in the device structure ITO/(PANI/Ni-TS-Pc)(n)/MEH-PPV/Al, where n stands for the number of PANI/Ni-TS-Pc bilayers. The deposition of PANI/Ni-TS-Pc leads to a decrease in the driving voltage of the PLEDs, which reaches a minimum when n = 5 bilayers. In addition, impedance spectroscopy data reveal that the PLED impedance decreases as more PANI/Ni-TS-Pc bilayers are deposited. The PLED structure is further described by an equivalent circuit composed by two R-C combinations, one for the bulk and other for the interface components, in series with a resistance originated in the ITO contact. From the impedance curves, the values for each circuit element is determined and it is found that both, bulk and interface resistances are decreased upon PANI/Ni-TS-Pc deposition. The results indicate that PANI/NiTS-Pc films reduce the contact resistance at ITO/MEH-PPV interface, and for that reason improve the hole-injection within the PLED structure. (c) 2007 Elsevier B.V. All rights reserved.

Automated system of seedling image analysis (SVIS) and electrical conductivity to assess sun hemp seed vigor

The development of new procedures for quickly obtaining accurate information on the physiological potential of seed lots is essential for developing quality control programs for the seed industry. In this study, the effectiveness of an automated system of seedling image analysis (Seed Vigor Imaging System - SVIS) in determining the physiological potential of sun hemp seeds and its relationship with electrical conductivity tests, were evaluated. SVIS evaluations were performed three and four days after sowing and data on the vigor index and the length and uniformity of seedling growth were collected. The electrical conductivity test was made on 50 seed replicates placed in containers with 75 mL of deionised water at 25 ºC and readings were taken after 1, 2, 4, 8 and 16 hours of imbibition. Electrical conductivity measurements at 4 or 8 hours and the use of the SVIS on 3-day old seedlings can effectively detect differences in vigor between different sun hemp seed lots.

Synthesis and characterization of polymers containing oligothiophenes

In the present work a series of thiophene oligomers of three and six thiophene units were synthesized, starting from thiophene, and characterized. Polymers containing these electroative side groups were then prepared by two strategies. The oligomers were attached to existing polymer systems and were connected to a polymerizable unit leading to monomer containing the oligothiophenes as side groups. Subsequently the properties of the monomers and the polymers were investigated. A butylcellulose derivative carrying terthienyl side chains (BCTTE, 26) was synthesized starting from cellulose acetate and 5-(2-chloroethyl)-2,2':5',2'-terthiophene (4). The polymer had a degree of substitution (DS) of the butyl and terthienyl side chains of DSbutyl = 1.9 and DSterth = 0.35, respectively. It was successfully spread on a Langmuir-Blodgett (LB) trough and then transferred to several solid substrates. X-rays reflectometry showed an ordered architecture of the cellulose backbones. However, the terthiophene side groups were found as isotropically aligned by polarized UV-Vis spectroscopy. When used as anode material in the electropolymerization of 3-pentylthiophene (28), polythiophene was grafted onto the cellulose backbone through the terthienyl side groups. The polythiophene chains showed an average anisotropic alignment of 20 % along the LB dipping direction, calculated by means of polarized UV-Vis spectroscopy. A second butylcellulose derivative carrying sexithienyl side chains (BCST) was synthesized and investigated, starting from butylcellulose and 2-[b ', b ''-dipentyl-5'''-(2-hydroxyethyl)-2,2': 5',2':5',2'':5'',2'':5'',2'''-sexithiophen-5-yl]-ethyl p-toluensulfonate (7). The polymer showed formation of stable LB monolayers at the air-water interface, but its transfer onto solid substrates was not successful. A poly(p-phenylene-ethynylene) bearing sexithienyl side chains (BzAcST, 31) was prepared by reaction of the two monomers 2-[b ', b ''-dipentyl-5'''-(2-hydroxyethyl)-2,2': 5',2':5',2'':5'',2'':5'',2'''-sexithiophen-5-yl]-ethyl 2,5-diiodobenzoate (15) and 2-[b', b ''-dipentyl-5'''-(2-hydroxyethyl)-2,2':5',2':5',2'':5'',2'':5'',2'''-sexithiophen-5-yl]-ethyl 2,5-diethynylbenzoate (18). The polymer was obtained as insoluble product. Upon oxidation with FeCl3 (doping) of the polymer suspension, BzAcST showed an electrical conductivity of ó = 2.5 . 10 -6 S/cm, a typical value for semiconductors. The IR spectrum of the doped polymer presented the diagnostic bands of oxidized sexithiophene in good agreement with literature results. Along with the monomer and polymer synthesis, an a,a '-disubstituted sexithiophene, b ', b ''-dipentyl-5,5'''-bis-(2-hydroxyethyl)-2,2':5',2':5',2'':5'',2'':5'',2'''-sexithiophene (6a),was synthesized and characterized. The UV-Vis absorption of the chromophore wasinvestigated as a function of temperature and different solvents, showing a blue-shift of the absorption maximum with increasing temperature and a red-shift changing the solvent from hexane to ethanol to toluene. Monitoring the change of the UV-Vis spectrum upon electrochemical oxidation, the oxidized chromophore showed a new broad absorption band, red shifted with respect to the p -p* transition of the neutral state. Upon reduction, the new band disappeared and the UV-Vis spectrum of the chromophore was restored. Such oxidation-reduction cycles were totally reversible. This feature, together with the absorption maximum falling in the visible region, makes this chromophore a suitable compound for the development of an electrochemical sensor.Attempts to polymerize acrylic monomers carrying sexythienyl side chains both via radical polymerization, as in the case of 2-[b ', b ''-dipentyl-5'''-(2-hydroxyethyl)-2,2': 5',2':5',2'':5'',2'':5'',2'''-sexithiophen-5-yl]-ethyl acrylate (8), and anionic polymerization, as in the case of 2-{b ', b ''-dipentyl-5'''-[2-(tertbutyldimethylsiloxy)ethyl]-2,2':5',2':5',2'':5'',2'': 5'',2''' -sexithiophen-5-yl}-ethylacrylate (29), were not successful, probably due to the steric hindrance of the oligothiophene side group. However, due to the time consuming and therefore restricted availability of the monomers, a screening of the polymerization conditions towards the formation of polymeric material was not possible.

Enhancing the thermomechanical behaviour of poly(phenylene sulphide) based composites via incorporation of covalently grafted carbon nanotubes

The thermal and thermomechanical properties of poly(phenylene sulphide) (PPS) based nanocomposites incorporating a polymer derivative covalently anchored onto single-walled carbon nanotubes (SWCNTs) were investigated. The grafted fillers acted as nucleating agents, increasing the crystallization temperature and degree of crystallinity of the matrix. They also enhanced its thermal stability, flame retardancy, glass transition (Tg) and heat deflection temperatures while reduced the coefficient of thermal expansion at temperatures below Tg. A strong rise in the thermal conductivity, Young?s modulus and tensile strength was found with increasing filler loading both in the glassy and rubbery states. All these outstanding improvements are ascribed to strong matrix-filler interfacial interactions combined with a compatibilization effect that results in very homogeneous SWCNT dispersion. The results herein offer useful insights towards the development of engineering thermoplastic/CNT nanocomposites for high-temperature applications.

Electrical investigation of p-type 4H-SiC heavily doped by ion implantation

In the last decades, an increasing interest in the research field of wide bandgap semiconductors was observed, mostly due to the progressive approaching of silicon-based devices to their theoretical limits. 4H-SiC is an example among these, and is a mature compound for applications. The main advantages offered 4H-SiC in comparison with silicon are an higher breakdown field, an higher thermal conductivity, a higher operating temperature, very high hardness and melting point, biocompatibility, but also low switching losses in high frequencies applications and lower on-resistances in unipolar devices. Then, 4H-SiC power devices offer great performance improvement; moreover, they can work in hostile environments where silicon power devices cannot function. Ion implantation technology is a key process in the fabrication of almost all kinds of SiC devices, owing to the advantage of a spatially selective doping. This work is dedicated to the electrical investigation of several differently-processed 4H-SiC ion- implanted samples, mainly through Hall effect and space charge spectroscopy experiments. It was also developed the automatic control (Labview) of several experiments. In the work, the effectiveness of high temperature post-implant thermal treatments (up to 2000°C) were studied and compared considering: (i) different methods, (ii) different temperatures and (iii) different duration of the annealing process. Preliminary p + /n and Schottky junctions were also investigated as simple test devices. 1) Heavy doping by ion implantation of single off-axis 4H-SiC layers The electrical investigation is one of the most important characterization of ion-implanted samples, which must be submitted to mandatory post-implant thermal treatment in order to both (i) recover the lattice after ion bombardment, and (ii) address the implanted impurities into lattice sites so that they can effectively act as dopants. Electrical investigation can give fundamental information on the efficiency of the electrical impurity activation. To understand the results of the research it should be noted that: (a) To realize good ohmic contacts it is necessary to obtain spatially defined highly doped regions, which must have conductivity as low as possible. (b) It has been shown that the electrical activation efficiency and the electrical conductivity increase with the annealing temperature increasing. (c) To maximize the layer conductivity, temperatures around 1700°C are generally used and implantation density high till to 10 21 cm -3 . In this work, an original approach, different from (c), is explored by the using very high annealing temperature, around 2000°C, on samples of Al + -implant concentration of the order of 10 20 cm -3 . Several Al + -implanted 4H-SiC samples, resulting of p-type conductivity, were investigated, with a nominal density varying in the range of about 1-5∙10 20 cm -3 and subjected to two different high temperature thermal treatments. One annealing method uses a radiofrequency heated furnace till to 1950°C (Conventional Annealing, CA), the other exploits a microwave field, providing a fast heating rate up to 2000°C (Micro-Wave Annealing, MWA). In this contest, mainly ion implanted p-type samples were investigated, both off-axis and on-axis <0001> semi-insulating 4H-SiC. Concerning p-type off-axis samples, a high electrical activation of implanted Al (50-70%) and a compensation ratio below 10% were estimated. In the work, the main sample processing parameters have been varied, as the implant temperature, CA annealing duration, and heating/cooling rates, and the best values assessed. MWA method leads to higher hole density and lower mobility than CA in equivalent ion implanted layers, resulting in lower resistivity, probably related to the 50°C higher annealing temperature. An optimal duration of the CA treatment was estimated in about 12-13 minutes. A RT resistivity on the lowest reported in literature for this kind of samples, has been obtained. 2) Low resistivity data: variable range hopping Notwithstanding the heavy p-type doping levels, the carrier density remained less than the critical one required for a semiconductor to metal transition. However, the high carrier densities obtained was enough to trigger a low temperature impurity band (IB) conduction. In the heaviest doped samples, such a conduction mechanism persists till to RT, without significantly prejudice the mobility values. This feature can have an interesting technological fall, because it guarantee a nearly temperature- independent carrier density, it being not affected by freeze-out effects. The usual transport mechanism occurring in the IB conduction is the nearest neighbor hopping: such a regime is effectively consistent with the resistivity temperature behavior of the lowest doped samples. In the heavier doped samples, however, a trend of the resistivity data compatible with a variable range hopping (VRH) conduction has been pointed out, here highlighted for the first time in p-type 4H-SiC. Even more: in the heaviest doped samples, and in particular, in those annealed by MWA, the temperature dependence of the resistivity data is consistent with a reduced dimensionality (2D) of the VRH conduction. In these samples, TEM investigation pointed out faulted dislocation loops in the basal plane, whose average spacing along the c-axis is comparable with the optimal length of the hops in the VRH transport. This result suggested the assignment of such a peculiar behavior to a kind of spatial confinement into a plane of the carrier hops. 3) Test device the p + -n junction In the last part of the work, the electrical properties of 4H-SiC diodes were also studied. In this case, a heavy Al + ion implantation was realized on n-type epilayers, according to the technological process applied for final devices. Good rectification properties was shown from these preliminary devices in their current-voltage characteristics. Admittance spectroscopy and deep level transient spectroscopy measurements showed the presence of electrically active defects other than the dopants ones, induced in the active region of the diodes by ion implantation. A critical comparison with the literature of these defects was performed. Preliminary to such an investigation, it was assessed the experimental set up for the admittance spectroscopy and current-voltage investigation and the automatic control of these measurements.

Characterization and electrochemical properties of conducting nanocomposites synthesized from p-anisidine and aniline with titanium carbide by chemical oxidative method

A novel polymer/TiC nanocomposites “PPA/TiC, poly(PA-co-ANI)/TiC and PANI/TiC” was successfully synthesized by chemical oxidation polymerization at room temperature using p-anisidine and/or aniline monomers and titanium carbide (TiC) in the presence of hydrochloric acid as a dopant with ammonium persulfate as oxidant. These nanocomposites obtained were characterized by Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and thermogravimetric analysis (TGA). XRD indicated the presence of interactions between polymers and TiC nanoparticle and the TGA revealed that the TiC nanoparticles improve the thermal stability of the polymers. The electrical conductivity of nanocomposites is in the range of 0.079–0.91 S cm−1. The electrochemical behavior of the polymers extracted from the nanocomposites has been analyzed by cyclic voltammetry. Good electrochemical response has been observed for polymer films; the observed redox processes indicate that the polymerisation on TiC nanoparticles produces electroactive polymers. These nanocomposite microspheres can potentially used in commercial applications as fillers for antistatic and anticorrosion coatings.

Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly(3-methylthiophene)

Field effect devices have been formed in which the active layer is a thin film of poly(3-methylthiophene) grown electrochemically onto preformed source and drain electrodes. Although a field effect is present after electrochemical undoping, stable device characteristics with a high modulation ratio are obtained only after vacuum annealing at an elevated temperature, and only then if the devices are held in vacuo. The polymer is shown to be p type and the devices operate in accumulation only. The hole mobility in devices thermally annealed under vacuum is around 10 -3 cm 2 V -1 s -1. On exposure to ambient laboratory air, the device conductance increases by several orders of magnitude. This increase may be reversed by subjecting the device to a further high-temperature anneal under vacuum. Subsidiary experiments show that these effects are caused by the reversible doping of the polymer by gaseous oxygen.

Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly(3-methylthiophene)

Field effect devices have been formed in which the active layer is a thin film of poly(3-methylthiophene) grown electrochemically onto preformed source and drain electrodes. Although a field effect is present after electrochemical undoping, stable device characteristics with a high modulation ratio are obtained only after vacuum annealing at an elevated temperature, and only then if the devices are held in vacuo. The polymer is shown to be p type and the devices operate in accumulation only. The hole mobility in devices thermally annealed under vacuum is around 10 -3 cm 2 V -1 s -1. On exposure to ambient laboratory air, the device conductance increases by several orders of magnitude. This increase may be reversed by subjecting the device to a further high-temperature anneal under vacuum. Subsidiary experiments show that these effects are caused by the reversible doping of the polymer by gaseous oxygen.

Electrical characterization of pn-junctions of PPV and silicon

Poly(phenylene vinylene) (PPV) grown via the precursor route, deposited on top of heavily doped n-type silicon, was studied using electrical measurement techniques. The results are compared to PPV grown via deposition of soluble derivative (MEH-PPV). The two types are very similar. They have comparable free carrier densities and both show minority-carrier effects. The activation energy found via the loss tangent is 0.13 eV. The effect of exposure to oxygen is visible in the capacitance and the current.

An investigation of the microstructure/electrical conductivity relationship in In2O3-substituted LSGM

The effect of controlled In3+ substitution on to the B-site in the perovskite oxygen ion conductor La0.9Sr0.1Ga0.8Mg0.2O2.85 (LSGM) has been examined with a view to exploring the influence on oxygen ion conductivity. In combination with the electrical conductivity study, detailed microstructural analysis was used to verify the location of the substituting cation and to determine the nature of secondary phase formation. The indium species clearly substituted for Ga3+ on the B-site of the lattice and the electrical conductivity showed a gradual decrease as the In+3 content increased. The interpretation of this data was complicated by the formation of the secondary phases LaInO3 and LaSrGaO4. (C) 2001 Elsevier Science Ltd. All rights reserved.

Investigation of electrical conductivity as a function of dopant-ion radius in the systems Zr0.75Ce0.08M0.17O1.92 (M=Nd, Sm, Gd, Dy, Ho, Y, Er, Yb, Sc)

Electrical conductivity versus dopant ionic radius studies in zirconia- and ceria-based, solid oxide fuel cell (SOFC) electrolyte systems have shown that oxygen-ion conductivity is highest when the host and dopant ions are similar in size [J. Am. Ceram. Soc. 48 (1965) 286; Solid State Ionics 37 (1989) 67; Solid State Ionics 5 (1981) 547]. Under these conditions, it is thought that the conduction paths within the crystal lattice become less distorted [Solid State Ionics 8 (1983) 201]. In this study, binary ZrO2-M2O3 unit cells were expanded, via the partial substitution of Ce+4 for Zr+4 into the lattice, in an attempt to identify new, ternary, zirconia/ceria-based electrolyte systems with enhanced electrical conductivity. The compositions Zr0.75Ce0.08M0.17O1.92 (M = Nd, Sm, Gd, Dy, Ho, Y, Yb, Sc) were prepared using traditional solid state techniques. Bulk phase characterisation and precise lattice parameter measurements were performed with X-ray diffraction techniques. Four-probe DC conductivity measurements between 400 and 900 degreesC showed that the dopant-ion radius influenced electrical conductivity. The conductivity versus dopant-ion radius trends previously observed in zirconia-based, binary systems are clearly apparent in the ternary systems investigated in this study. The addition of ceria was found to have a negative influence on the electrical conductivity over the temperature range 400-900 degreesC. It is suggested that distortion of the oxygen-ion conduction path by the presence of the larger M+3 and Ce+4 species (relative to Zr+4) is the reason for the decreasing electrical conductivity as a function of increasing dopant size and ceria addition, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.

Effect of Co addition on the lattice parameter, electrical conductivity and sintering of gadolinia-doped ceria

Co-sintering aid has been added to Ce1.9Gd0.1O1.95 (CGO) by treating a commercial powder with Co(NO3)(2) (COCGO), X-ray diffraction (XRD) measurements of lattice parameter indicated that the Co was located on the CGO particle surface after calcination at 650 degreesC. After heat treatment at temperatures above 650 degreesC, the room temperature lattice parameter of CGO was found to increase, indicating redistribution of the Gd. Compared to CGO, the lattice parameter of CGO + 2 cation% Co (2CoCGO) was lower for a given temperature (650-1100 degreesC), A.C. impedance revealed that the lattice conductivity of 2CoCGO was enhanced when densified at lower temperatures, Transmission electron microscopy (TEM) showed that, even after sintering for 4 h at 980 degreesC, most of the Co was located at grain boundaries. (C) 2002 Published by Elsevier Science B.V.

On the origin of the electrical response of vapor grown carbon nanofiber + epoxy composites

The origin of the electrical response of vapor grown carbon nanofiber (VGCNF) + epoxy composites is investigated by studying the electrical behavior of VGCNF with resin, VGCNF with hardener and cured composites, separately. It is demonstrated that the onset of the conductivity is associated to the emergence of a weak disorder regime. It is also shown that the weak disorder regime is related to a hopping depending on the physical properties of the polymer matrix.