Numerical modeling of holmium-doped fluoride fiber lasers

We combine all the known experimental demonstrations and spectroscopic parameters into a numerical model of the Ho3+ -doped fluoride glass fiber laser system. Core-pumped and cladding-pumped arrangements were simulated for all the population-bottlenecking mitigation schemes that have been tested, and good agreement between the model and the previously reported experimental results was achieved in most but not in all cases. In a similar way to Er3+ -doped fluoride glass fiber lasers, we found that the best match with measurements required scaled-down rate parameters for the energy transfer processes that operate in moderate to highly concentrated systems. The model isolated the dominant processes affecting the performance of each of the bottlenecking mitigation schemes and pump arrangements. It was established that pump excited-state absorption is the main factor affecting the performance of the core-pumped demonstrations of the laser, while energy transfer between rare earth ions is the main factor controlling the performance in cladding-pumped systems.

Broadly tunable CW green-to-red laser source based on frequency doubling of a quantum-dot external cavity diode laser in a PPKTP waveguide

Here we present a compact tunable all-room-temperature frequency-doubling scheme, using a periodically poled potassium titanyl phosphate (PPKTP) waveguide and a QD-ECDL. A broad wavelength tunability of the second harmonic generated light (SHG) in the spectral region between 567.7 and 629.1 nm was achieved, with maximum conversion efficiencies in range of 0.34%-7.9%. The maximum output power for the SHG light was 4.11 mW at 591.5 nm, achieved for 52 mW of launched pump power at 1183 nm, resulting in a conversion efficiency of 7.9%.

Spectrally controlled, picosecond pulse generation from an InGaN violet diode laser

Self-seeded, gain-switched operation of an InGaN multi-quantum-well diode laser is reported for the first time. Narrow-line, wavelength-tunable, picosecond pulses have been generated from a standard, uncoated diode laser in an external cavity.

Semiconductor saturable absorber mirror passively Q-switched 2.97 μm fluoride fiber laser

A diode-cladding-pumped mid-infrared passively Q-switched Ho3+-doped fluoride fiber laser using a reverse designed broad band semiconductor saturable mirror (SESAM) was demonstrated. Nonlinear reflectivity of the SESAM was measured using an in-house Yb3+-doped mode-locked fiber laser at 1062 nm. Stable pulse train was produced at a slope efficient of 12.1% with respect to the launched pump power. Maximum pulse energy of 6.65 μ J with a pulse width of 1.68 μ s and signal-to-noise ratio (SNR) of ∼50 dB was achieved at a repetition rate of 47.6 kHz and center wavelength of 2.971 μ m. To the best of our knowledge, this is the first 3 μ m region SESAM-based Q-switched fiber laser with the highest average power and pulse energy, as well as the longest wavelength from mid-infrared passively Q-switched fluoride fiber lasers. © 2014 Astro Ltd.

Optimization of gain and SNR in bi-directionally pumped dispersion compensating amplifier modules

In this paper, we present an analysis and optimisation of the performance of bi-directionally pumped dispersion compensation modules acting as simultaneous Raman amplifiers, with optimal configurations for operation with different fibers commercially available. The ratio between forward and backward pump powers for minimum noise influence is obtained in each case, with improvements in the SNR of up to 8 dB when compared to a purely backward-pumped case.

The effect of slow passage in the pulse-pumped quantum dot laser

In recent years, quantum-dot (QD) semiconductor lasers attract significant interest in many practical applications due to their advantages such as high-power pulse generation because to the high gain efficiency. In this work, the pulse shape of an electrically pumped QD-laser under high current is analyzed. We find that the slow rise time of the pulsed pump may significantly affect the high intensity output pulse. It results in sharp power dropouts and deformation of the pulse profile. We address the effect to dynamical change of the phase-amplitude coupling in the proximity of the excited state (ES) threshold. Under 30ns pulse pumping, the output pulse shape strongly depends on pumping amplitude. At lower currents, which correspond to lasing in the ground state (GS), the pulse shape mimics that of the pump pulse. However, at higher currents the pulse shape becomes progressively unstable. The instability is greatest when in proximity to the secondary threshold which corresponds to the beginning of the ES lasing. After the slow rise stage, the output power sharply drops out. It is followed by a long-time power-off stage and large-scale amplitude fluctuations. We explain these observations by the dynamical change of the alpha-factor in the QD-laser and reveal the role of the slowly rising pumping processes in the pulse shaping and power dropouts at higher currents. The modeling is in very good agreement with the experimental observations. © 2014 SPIE.

Semiconductor saturable absorber mirror passively Q-switched 2.97 μm fluoride fiber laser

A diode-cladding-pumped mid-infrared passively Q-switched Ho 3+-doped fluoride fiber laser using a reverse designed broad band semiconductor saturable mirror (SESAM) was demonstrated. Nonlinear reflectivity of the SESAM was measured using an in-house Yb3+-doped mode-locked fiber laser at 1062 nm. Stable pulse train was produced at a slope efficient of 12.1% with respect to the launched pump power. Maximum pulse energy of 6.65 μJ with a pulse width of 1.68 μs and signal to noise ratio (SNR) of ~50 dB was achieved at a repetition rate of 47.6 kHz and center wavelength of 2.971 μm. To the best of our knowledge, this is the first 3 μm region SESAM based Q-switched fiber laser with the highest average power and pulse energy, as well as the longest wavelength from mid-infrared passively Q-switched fluoride fiber lasers. © 2014 SPIE.

Quantum dot-based terahertz photoconductive antennas

We present novel Terahertz (THz) emitting optically pumped Quantum Dot (QD) photoconductive (PC) materials and antenna structures on their basis both for pulsed and CW pumping regimes. Full text Quantum dot and microantenna design - Presented here are design considerations for the semiconductor materials in our novel QD-based photoconductive antenna (PCA) structures, metallic microantenna designs, and their implementation as part of a complete THz source or transceiver system. Layers of implanted QDs can be used for the photocarrier lifetime shortening mechanism[1,2]. In our research we use InAs:GaAs QD structures of varying dot layer number and distributed Bragg reflector(DBR)reflectivity range. According to the observed dependence of carrier lifetimes on QD layer periodicity [3], it is reasonable to assume that electron lifetimes can be potentially reduced down to 0.45ps in such structures. Both of these features; long excitation wavelength and short carriers lifetime predict possible feasibility of QD antennas for THz generation and detection. In general, relatively simple antenna configurations were used here, including: coplanar stripline (CPS); Hertzian-type dipoles; bow-ties for broadband and log-spiral(LS)or log-periodic(LP)‘toothed’ geometriesfor a CW operation regime. Experimental results - Several lasers are used for antenna pumping: Ti:Sapphire femtosecond laser, as well as single-[4], double-[5] wavelength, and pulsed [6] QD lasers. For detection of the THz signal different schemes and devices were used, e.g. helium-cooled bolometer, Golay cell and a second PCA for coherent THz detection in a traditional time-domain measurement scheme.Fig.1shows the typical THz output power trend from a 5 um-gap LPQD PCA pumped using a tunable QD LD with optical pump spectrum shown in (b). Summary - QD-based THz systems have been demonstrated as a feasible and highly versatile solution. The implementation of QD LDs as pump sources could be a major step towards ultra-compact, electrically controllable transceiver system that would increase the scope of data analysis due to the high pulse repetition rates of such LDs [3], allowing real-time THz TDS and data acquisition. Future steps in development of such systems now lie in the further investigation of QD-based THz PCA structures and devices, particularly with regards to their compatibilitywith QD LDs as pump sources. [1]E. U. Rafailov et al., “Fast quantum-dot saturable absorber for passive mode-locking of solid-State lasers,”Photon.Tech.Lett., IEEE, vol. 16 pp. 2439-2441(2004) [2]E. Estacio, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures. Appl.Phys.Lett., vol. 94 pp. 232104 (2009) [3]C. Kadow et al., “Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics,” Appl. Phys. Lett., vol. 75 pp. 3548-3550 (1999) [4]T. Kruczek, R. Leyman, D. Carnegie, N. Bazieva, G. Erbert, S. Schulz, C. Reardon, and E. U. Rafailov, “Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device,” Appl. Phys. Lett., vol. 101(2012) [5]R. Leyman, D. I. Nikitichev, N. Bazieva, and E. U. Rafailov, “Multimodal spectral control of a quantum-dot diode laser for THz difference frequency generation,” Appl. Phys. Lett., vol. 99 (2011) [6]K.G. Wilcox, M. Butkus, I. Farrer, D.A. Ritchie, A. Tropper, E.U. Rafailov, “Subpicosecond quantum dot saturable absorber mode-locked semiconductor disk laser, ” Appl. Phys. Lett. Vol 94, 2511 © 2014 IEEE.

Dropout dynamics in pulsed quantum dot lasers due to mode jumping

We examine the response of a pulse pumped quantum dot laser both experimentally and numerically. As the maximum of the pump pulse comes closer to the excited-state threshold, the output pulse shape becomes unstable and leads to dropouts. We conjecture that these instabilities result from an increase of the linewidth enhancement factor α as the pump parameter comes close to the excitated state threshold. In order to analyze the dynamical mechanism of the dropout, we consider two cases for which the laser exhibits either a jump to a different single mode or a jump to fast intensity oscillations. The origin of these two instabilities is clarified by a combined analytical and numerical bifurcation diagram of the steady state intensity modes.

Mode-locked semiconductor disk lasers

This paper will review the recent advances in the field of ultrashort pulse generation from optically pumped vertical-external-cavity surface-emitting lasers (OP-VECSELs). In this review, we will summarize the most significant results presented over the last 15 years, before highlighting recent breakthroughs related to mode-locked VECSELs by different research groups. Different mode-locking techniques for OP-VECSELs are described in detail. Previously, saturable absorbers, such as semiconductor saturable absorber mirrors—external, or internal as in mode-locked integrated external-cavity surface emitting lasers (MIXSEL)—, and recently, novel-material-based carbon-nanotube and graphene saturable absorbers have been employed. A new mode-locking method was presented and discussed in recent years. This method is referred to as self-mode-locking or saturable-absorber-free operation of mode-locked VECSELs. In this context, we particularly focus on achievements regarding self-mode-locking, which is considered a promising technique for the realization of high-power, compact, robust and cost-efficient ultrashort pulse lasers. To date, the presented mode-locking techniques have led to great enhancement in average powers, peak powers, and repetition rates that can be achieved with passively mode-locked VECSELs.

Low-linewidth and tunable single frequency 1x2 multimode-interferometer-Fabry-Perot laser diode

In this paper, we present a novel 1x2 multi-mode-interferometer-Fabry-Perot (MMI-FP) laser diode, which demonstrated tunable single frequency operation with more than 30dB side mode suppression ratio (SMSR) and a tuning range of 25nm in the C and L bands, as well as a 750 kHz linewidth. These lasers do not require material regrowth and high resolution gratings; resulting in a simpler process that can significantly increase the yield and reduce the cost.

Atténuation d'effets non linéaires dans les lasers fibrés de haute puissance opérés en régime continu

Les lasers à fibre de haute puissance sont maintenant la solution privilégiée pour les applications de découpe industrielle. Le développement de lasers pour ces applications n’est pas simple en raison des contraintes qu’imposent les normes industrielles. La fabrication de lasers fibrés de plus en plus puissants est limitée par l’utilisation d’une fibre de gain avec une petite surface de mode propice aux effets non linéaires, d’où l’intérêt de développer de nouvelles techniques permettant l’atténuation de ceux-ci. Les expériences et simulations effectuées dans ce mémoire montrent que les modèles décrivant le lien entre la puissance laser et les effets non linéaires dans le cadre de l’analyse de fibres passives ne peuvent pas être utilisés pour l’analyse des effets non linéaires dans les lasers de haute puissance, des modèles plus généraux doivent donc développés. Il est montré que le choix de l’architecture laser influence les effets non linéaires. En utilisant l’équation de Schrödinger non linéaire généralisée, il a aussi été possible de montrer que pour une architecture en co-propagation, la diffusion Raman influence l’élargissement spectral. Finalement, les expériences et les simulations effectuées montrent qu’augmenter la réflectivité nominale et largeur de bande du réseau légèrement réfléchissant de la cavité permet d’atténuer la diffusion Raman, notamment en réduisant le gain Raman effectif.

Design and Fabrication of Perovskite Micro-Cavity Lasers

Thesis (Master's)--University of Washington, 2016-08

Design and development of distributed feedback transistor lasers

The transistor laser is a unique three-port device that operates simultaneously as a transistor and a laser. With quantum wells incorporated in the base regions of heterojunction bipolar transistors, the transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and electrical-optical characteristics for direct “read-out” of its optical properties. These devices have demonstrated many useful features such as high-speed optical transmission without the limitations of resonance, non-linear mixing, frequency multiplication, negative resistance, and photon-assisted switching. To date, all of these devices operate as multi-mode lasers without any type of wavelength selection or stabilizing mechanisms. Stable single-mode distributed feedback diode laser sources are important in many applications including spectroscopy, as pump sources for amplifiers and solid-state lasers, for use in coherent communication systems, and now as TLs potentially for integrated optoelectronics. The subject of this work is to expand the future applications of the transistor laser by demonstrating the theoretical background, process development and device design necessary to achieve singlelongitudinal- mode operation in a three-port transistor laser. A third-order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength of 959.75 nm and threshold current of 13 mA operating at -70 °C. For devices with cleaved ends a side-mode suppression ratio greater than 25 dB has been achieved.

Evaluation Of Photodynamic Therapy Using A Diode Laser And Different Photosensitizers Against Enterococcus Faecalis.

Photodynamic therapy (PDT) has been proven to be effective in disinfecting root canals. The aim of this present study was to evaluate the effects of PDT on the viability of Enterococcus faecalis using methylene blue (MB) and malachite green (MG) as photosensitizers. Solutions containing E. faecalis (ATCC 29212) were prepared and harvested by centrifugation to obtain cell suspensions, which were mixed with MB and MG. Samples were individually irradiated by the diode laser at a distance of 1mm for 30, 60, or 120 seconds. Colonyforming units (CFU) were determined for each treatment. PDT for 60 and 120 seconds with MG reduced E. faecalis viability significantly. Similar results were obtained when MB was used as photosensitizer. PDT using MB and MG have antibacterial effect against E. faecalis, showing potential to be used as an adjunctive antimicrobial procedure in endodontic therapy.