Analyse der Funktion von Dystroglycan im frühen sich entwickelnden ZNS mittels inhibierender Antikörper

In der vorliegenden Arbeit wurde die Funktion von Dystroglycan in jungen und späten Stadien des sich entwickelnden ZNS untersucht. Hierzu wurden Antikörper generiert, die fähig waren, in vivo die Interaktion zwischen a-und b-Dystroglycan zu stören. Die Antikörper oder Fab-Fragmente wurden in das Mesencephalon oder Auge lebender Hühnerembryonen injiziert, um aus den beobachteten Veränderungen die Funktion des DAG zu untersuchen. Die Fab-Fragmentinjektionen führten zu Hyperproliferation, verbunden mit morphologischen Veränderungen der Neuroepithelzellen und Zunahme der Anzahl postmitotischer Neuronen. Ebenso wurde die basale und apikale Polarität von Neuroepithelzellen beeinflusst. Auch die Axonorientierung der tectobulbären Axone wurde durch die Injektionen gestört. In älteren embryonalen Stadien kam es, durch Fab-Fragmentinjektionen in die Augen von Embryonen, zu strukturellen Veränderungen der Retina, verbunden mit einer breiteren Verteilung des DAG, wie auch der Synapsen innerhalb der OPL. Die retinalen Zelltypen, wie Müller-Gliazellen und Stäbchen-Bipolarzellen, waren abgerundet und hatten ihre typische Zellform verloren. Die Ergebnisse dieser Arbeit zeigen, dass Dystroglycan einen entscheidenden Einfluss auf die Proliferation, Migration, Polarität und Differenzierung der Neuroepithelzellen ausübt. Außerdem zeigen diese Daten, dass Dystroglycan nicht nur in der frühen embryonalen ZNS-Entwicklung eine maßgebliche Rolle spielt, sondern auch in späten Stadien. Die Ähnlichkeit der beobachteten Veränderungen nach Fab-Fragmentinjektionen legt nahe, dass einige Veränderungen im ZNS bestimmter Muskeldystrophieformen, durch Beeinflussung der Neuroepithelzellen im sich entwickelnden ZNS, verursacht werden.

Synthese und Evaluierung von [18 F]-Fluormethyltosylat als prosthetische Gruppe für die 18 F-Fluormethylierung von ZNS-Liganden für die PET

Die 11C-Methylierung von Radioliganden ist eine weit verbreitete Markierungsstrategie für PET-Liganden. Aber die kurze Halbwertszeit des Kohlenstoff-11 von 20,3 Minuten limitiert seinen Nutzen. Daher ist die 18F-Fluoralkylierung eine Möglichkeit, Fluor-18, das eine Halbwertszeit von 109,8 Minuten hat, in Target-Moleküle einzuführen. Während die 18F-Fluorethylierung eine weitverbreitete Markierungsstrategie ist, wird die 18F-Fluormethylierung bisher nur selten angewendet. Eine Ursache dafür ist die geringe Stabilität der 18F-Fluormethylgruppe in vivo. Durch Substitution des Wasserstoffs in der 18F-Fluormethylgruppe durch Deuterium kann deren Stabilität jedoch deutlich erhöht werden. Dadurch kann die 18F-Fluormethylierung eine wichtige Synthesestrategie für ZNS-Liganden sein, bei denen große strukturelle Varianz zum Einführen des Fluor-18 nicht möglich ist. rnAls prosthetische Gruppen zur 18F-Fluormethylierung wurden [18F]Fluormethyltosylat und [18F]Fluor-[d2]methyltosylat mit radiochemischen Ausbeuten bis zu 50% synthetisiert. Die Reaktionsbedingungen der 18F-Fluormethylierung mit d2-[18F]FMT und die Abtrennung der Radioliganden wurden an einer Modellverbindungen und den drei Zielstrukturen [18F]Fluor-[d2]methylharmol, [18F]Fluor-[d2]methyl-MH.MZ und [18F]Fluor-[d2]methylflumazenil optimiert. Es konnten radiochemischen Ausbeuten zwischen 25 und 60% erzielt werden. rnMit allen drei ZNS-Liganden wurden Kleintier-PET-Studien durchgeführt. Das d2-[18F]FMH zeigte eine schnelle und 1,5fach höhere Anreicherung im Hirn innerhalb der ersten fünf Minuten als die Vergleichssubstanz [18F]FEH. Für d2-[18F]FM-MH.MZ wurde in vivo eine höhere spezifische Anreicherung des Radiotracers im frontalen Cortex beobachtet als bei der 18F-fluorethylierten Vergleichssubstanz. Für das [18F]Fluor-[d2]methylflumazenil konnte keine Aufnahme ins Hirn festgestellt werden, sondern es kam zur vollständigen Zersetzung des Radioliganden durch Defluorierung. d2-[18F]FMH und d2-[18F]FM-MH.MZ waren bei physiologischen Bedingungen zu mehr als 90% stabil.rn

Morphological characterization of ZnS thin films for photovoltaic applications

Le celle solari a film sottile sono tra le alternative più promettenti nel campo fotovoltaico. La ricerca di materiali non tossici ed economici per la passivazione delle superfici è di fondamentale importanza. Il presente è uno studio sulla morfologia di film sottili di ZnS. I campioni analizzati sono stati cresciuti tramite DC sputtering a diversa potenza (range 50-150W) per studiare le connessioni tra condizioni di deposizione e proprietà strutturali. Lo studio è stato condotto mediante acquisizione di mappe AFM. E' stata effettuata un'analisi dei buchi (dips) in funzione della potenza di sputtering, per individuare il campione con la minore densità di dips in vista di applicazioni in celle solari a film sottile. I parametri strutturali, quali la rugosità superficiale e la lunghezza di correlazione laterale sono stati determinati con un'analisi statistica delle immagini. La densità e dimensione media dei grani sono state ricavate da una segmentazione delle immagini. Le analisi sono state svolte su due campioni di ZnO per fini comparativi. Tramite EFM sono state ottenute mappe di potenziale di contatto. Tramite KPFM si è valutata la differenza di potenziale tra ZnS e un layer di Al depositato sulla superficie. La sheet resistance è stata misurata con metodo a quattro punte. Dai risultati la potenza di sputtering influenza la struttura superficiale, ma in maniera non lineare. E' stato individuato il campione con la minore rugosità e densità di dips alla potenza di 75 W. Si è concluso che potenze troppo grandi o piccole in fase di deposizione promuovono il fenomeno di clustering dei grani e di aumentano la rugosità e densità di dips. E' emersa una corrispondenza diretta tra morfologia e potenziale di contatto alla superficie. La differenza di potenziale tra Al e ZnS è risultata inferiore al valore noto, ciò può essere dovuto a stati superficiali indotti da ossidi. Il campione risulta totalmente isolante.

Preparation of high purity ZnO nanobelts by thermal evaporation of ZnS

High purity one-dimensional ZnO nanobelts were synthesized by thermally evaporating commercial ZnS powders in a hydrogen-oxygen mixture gas at 1050 degrees C. It was found that these ZnO nanobelts had a single crystal hexagonal wurtzite structure growing along the [0001] direction. They had a rectangle-shaped cross-section with typical widths of 20 to 100 nanometers and lengths of up to hundreds of micrometers with lattice constants of a = 0.325 nm and c = 0.520 nm. The self-catalytic hydrogen-oxygen assisted growth of ZnO nanobelt is discussed. The photoluminescence (PL) characterization of the ZnO nanobelts shows strong near-band UV emission (about 383 nm) and one broad peak at 501 nm, which indicates that the ZnO nanobelts have good potential application in optoelectronic devices.

Synthesis of CuS and CuS/ZnS core/shell nanocrystals for photocatalytic degradation of dyes under visible light

High quality CuS and CuS/ZnS core/shell nanocrystals (NCs) were synthesized in a large quantity using a facile hydrothermal method at low temperatures of 60 C and evaluated in the photodegradation of Rhodamine B (RhB) under visible light irradiation. Synthesis time plays an important role in controlling the morphology, size and photocatalytic activity of both CuS and CuS/ZnS core/shell NCs which evolve from spherical shaped particles to form rods with increasing reaction time, and after 5 h resemble "flower" shaped morphologies in which each "flower" is composed of many NCs. Photocatalytic activity originates from photo-generated holes in the narrow bandgap CuS, with encapsulation by large bandgap ZnS layers used to form the core/shell structure that improves the resistance of CuS towards photocorrosion. Such CuS/ZnS core/shell structures exhibit much higher photocatalytic activity than CuS or ZnS NCs alone under visible light illumination, and is attributed to higher charge separation rates for the photo-generated carriers in the core/shell structure. © 2013 Elsevier B.V.

Size dependent photodegradation of CdS particles deposited onto TiO2 mesoporous films by SILAR method

The properties of CdS nanoparticles incorporated onto mesoporous TiO2 films by a successive ionic layer adsorption and reaction (SILAR) method were investigated by Raman spectroscopy, UV-visible spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). High resolution TEM indicated that the synthesized CdS particles were hexagonal phase and the particle sizes were less than 5 nm when SILAR cycles were fewer than 9. Quantum size effect was found with the CdS sensitized TiO2 films prepared with up to 9 SILAR cycles. The band gap of CdS nanoparticles decreased from 2.65 eV to 2.37 eV with the increase of the SILAR cycles from 1 to 11. The investigation of the stability of the CdS/TiO2 films in air under illumination (440.6 µW/cm2) showed that the photodegradation rate was up to 85% per day for the sample prepared with 3 SILAR cycles. XPS analysis indicated that the photodegradation was due to the oxidation of CdS, leading to the transformation from sulphide to sulphate (CdSO4). Furthermore, the degradation rate was strongly dependent upon the particle size of CdS. Smaller particles showed faster degradation rate. The size-dependent photo-induced oxidization was rationalized with the variation of size-dependent distribution of surface atoms of CdS particles. Molecular Dynamics (MD) simulation has indicated that the surface sulphide anion of a large CdS particle such as CdS made with 11 cycles (CdS11, particle size = 5.6 nm) accounts for 9.6% of the material whereas this value is increased to 19.2% for (CdS3) based smaller particles (particle size: 2.7 nm). Nevertheless, CdS nanoparticles coated with ZnS material showed a significantly enhanced stability under illumination in air. A nearly 100% protection of CdS from photon induced oxidation with a ZnS coating layer prepared using four SILAR cycles, suggesting the formation of a nearly complete coating layer on the CdS nanoparticles.

Polyacrylic Acid Assisted Synthesis of Cu2ZnSnS4 by Hydrothermal Method

Pure phase Cu2ZnSnS4 (CZTS) nanoparticles were successfully synthesized via polyacrylic acid (PAA) assisted one-pot hydrothermal route. The morphology, crystal structure, composition and optical properties as well as the photoactivity of the as-synthesized CZTS nanoparticles were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectrometer, UV-visible absorption spectroscopy and photoelectrochemical measurement. The influence of various synthetic conditions, such as the reaction temperature, reaction duration and the amount of PAA in the precursor solution on the formation of CZTS compound was systematically investigated. The results have shown that the crystal phase, morphology and particle size of CZTS can be tailored by controlling the reaction conditions. The formation mechanism of CZTS in the hydrothermal reaction has been proposed based on the investigation of time-dependent phase evolution of CZTS which showed that metal sulfides (e.g., Cu2S, SnS2 and ZnS) were formed firstly during the hydrothermal reaction before forming CZTS compound through nucleation. The band gap of the as-synthesized CZTS nanoparticles is 1.49 eV. The thin film electrode based on the synthesized CZTS nanoparticles in a three-electrode photoelectrochemical cell generated pronounced photocurrent under illumination provided by a red light-emitting diode (LED, 627 nm), indicating the photoactivity of the semiconductor material.

Enhanced electron lifetime of CdSe/CdS quantum dot (QD) sensitized solar cells using ZnSe core–shell structure with efficient regeneration of quantum Ddots

Research on development of efficient passivation materials for high performance and stable quantum dot sensitized solar cells (QDSCs) is highly important. While ZnS is one of the most widely used passivation material in QDSCs, an alternative material based on ZnSe which was deposited on CdS/CdSe/TiO2 photoanode to form a semi-core/shell structure has been found to be more efficient in terms of reducing electron recombination in QDSCs in this work. It has been found that the solar cell efficiency was improved from 1.86% for ZnSe0 (without coating) to 3.99% using 2 layers of ZnSe coating (ZnSe2) deposited by successive ionic layer adsorption and reaction (SILAR) method. The short circuit current density (Jsc) increased nearly 1-fold (from 7.25 mA/cm2 to13.4 mA/cm2), and the open circuit voltage (Voc) was enhanced by 100 mV using ZnSe2 passivation layer compared to ZnSe0. Studies on the light harvesting efficiency (ηLHE) and the absorbed photon-to-current conversion efficiency (APCE) have revealed that the ZnSe coating layer caused the enhanced ηLHE at wavelength beyond 500 nm and a significant increase of the APCE over the spectrum 400−550 nm. A nearly 100% APCE was obtained with ZnSe2, indicating the excellent charge injection and collection process in the device. The investigation on charge transport and recombination of the device has indicated that the enhanced electron collection efficiency and reduced electron recombination should be responsible for the improved Jsc and Voc of the QDSCs. The effective electron lifetime of the device with ZnSe2 was nearly 6 times higher than ZnSe0 while the electron diffusion coefficient was largely unaffected by the coating. Study on the regeneration of QDs after photoinduced excitation has indicated that the hole transport from QDs to the reduced species (S2−) in electrolyte was very efficient even when the QDs were coated with a thick ZnSe shell (three layers). For comparison, ZnS coated CdS/CdSe sensitized solar cell with optimum shell thickness was also fabricated, which generated a lower energy conversion efficiency (η = 3.43%) than the ZnSe based QDSC counterpart due to a lower Voc and FF. This study suggests that ZnSe may be a more efficient passivation layer than ZnS, which is attributed to the type II energy band alignment of the core (CdS/CdSe quantum dots) and passivation shell (ZnSe) structure, leading to more efficient electron−hole separation and slower electron recombination.

On the growth process of Cu2ZnSn(S,Se)4 absorber layer formed by selenizing Cu–ZnS–SnS precursors and its photovoltaic performance

Sputtering and subsequent sulfurization(orselenization)is one of the methods that have been extensively employed to fabricate Cu2ZnSn(S,Se)4 (CZTSSe) thin films. However, there are limited reports on the effect of precursor stacking order of the sputtered source materials on the properties of the synthesized CZTSSe films. In this work,the morphology and crystallization process of the CZTSSe films which were prepared by selenizing Cu–ZnS–SnS precursor layers with different stacking sequences and the adhesion property between the as-synthesized CZTSSe layer and Mosubstrate have been thoroughly investigated. It has been found that the growth of CZTSSe material and the morphology of the film strongly depend on the location of Culayer in the precursor film. The formation of CZTSSe starts from the diffusion of Cu–Se to Sn(S,Se)layert o form Cu–Sn–(S,Se) compound,followed by the reaction with Zn(S,Se). The investigation of themorphology of the CZTSSe films has shown that large grains are formed in the film with the precursor stacking order of Mo/SnS/ZnS/Cu,which is attributed to a bottom-to-top growth mechanism. In contrast, the film made from a precursor with a stacking sequence of Mo/ZnS/ SnS/Cu is mainly consisted of small grains due to a top-to-bottom growth mechanism. The best CZTSSe solar cell with energy conversion efficiency of3.35%has been achieved with the selenized Mo/ZnS/ SnS/Cu film, which is attributed to a good contact between the absorber layer and the Mosubstrate.

Investigation of the Internal Heterostructure of Highly Luminescent Quantum Dot-Quantum Well Nanocrystals

In this paper, we report on the growth and characterization of quantum dot−quantum well nanostructures with photoluminescence (PL) that is tunable over the visible range. The material exhibits a PL efficiency as high as 60% and is prepared by reacting ZnS nanocrystals in turn with precursors for CdSe and ZnS in an attempt to form a simple “ZnS/CdSe/ZnS quantum-well structure”. Through the use of synchrotron radiation-based photoelectron spectroscopy in conjunction with detailed overall compositional analysis and correlation with the size of the final composite nanostructure, the internal structure of the composite nanocrystals is shown to consist of a graded alloy core whose composition gradually changes from ZnS at the very center to CdSe at the onset of a CdSe layer. The outer shell is ZnS with a sharp interface, probably reflecting the relative thermodynamic stabilities of the parent binary phases. These contrasting aspects of the internal structure are discussed in terms of the various reactivities and are shown to be crucial for understanding the optical properties of such complex heterostructured nanomaterials.

Theoretical Optimization of Metal Para-Normal Silicon Schottky-Barrier Solar-Cell

The theoretical optimization of the design parametersN A ,N D andW P has been done for efficient operation of Au-p-n Si solar cell including thermionic field emission, dependence of lifetime and mobility on impurity concentrations, dependence of absorption coefficient on wavelength, variation of barrier height and hence the optimum thickness ofp region with illumination. The optimized design parametersN D =5×1020 m−3,N A =3×1024 m−3 andW P =11.8 nm yield efficiencyη=17.1% (AM0) andη=19.6% (AM1). These are reduced to 14.9% and 17.1% respectively if the metal layer series resistance and transmittance with ZnS antireflection coating are included. A practical value ofW P =97.0 nm gives an efficiency of 12.2% (AM1).

Chemically Programmed Ultrahigh Density Two-Dimensional Semiconductor Superlattice Array

Designing an ultrahigh density linear superlattice array consisting of periodic blocks of different semiconductors in the strong confinement regime via a direct synthetic route remains an unachieved challenge in nanotechnology. We report a general synthesis route for the formulation of a large-area ultrahigh density superlattice array that involves adjoining multiple units of ZnS rods by prolate US particles at the tips. A single one-dimensional wire is 300-500 nm long and consists of periodic quantum wells with a barrier width of 5 nm provided by ZnS and a well width of 1-2 nm provided by CdS, defining a superlattice structure. The synthesis route allows for tailoring of ultranarrow laserlike emissions (fwhm approximate to 125 meV) originating from strong interwell energy dispersion along with control of the width, pitch, and registry of the superlattice assembly. Such an exceptional high-density superlattice array could form the basis of ultrahigh density memories in addition to offering opportunities for technological advancement in conventional heterojunction-based device applications.

Lattice vibrations and specific heat of zinc blende

The dispersion relations, frequency distribution function and specific heat of zinc blende have been calculated using Houston's method on (1) A short range force (S. R.) model of the type employed in diamond by Smith and (2) A long range model assuming an effective charge Ze on the ions. Since the elastic constant data on ZnS are not in agreement with one another the following values were used in these calculations: {Mathematical expression}. As compared to the results on the S. R. model, the Coulomb force causes 1. A splitting of the optical branches at (000) and a larger dispersion of these branches; 2. A rise in the acoustic frequency branches the effect being predominant in a transverse acoustic branch along [110]; 3. A bridging of the gap of forbidden frequencies in the S. R. model; 4. A reduction of the moments of the frequency distribution function and 5. A flattening of the Θ- T curve. By plotting (Θ/Θ0) vs. T., the experimental data of Martin and Clusius and Harteck are found to be in perfect coincidence with the curve for the short range model. The values of the elastic constants deduced from the ratio Θ0 (Theor)/Θ0 (Expt) agree with those of Prince and Wooster. This is surprising as several lines of evidence indicate that the bond in zinc blende is partly covalent and partly ionic. The conclusion is inescapable that the effective charge in ZnS is a function of the wave vector {Mathematical expression}.