Ion acceleration in laser-excited plasma wake fields

The dynamics of the plasma ions in the wake fields of short, ultraintense laser pulses in underdense plasmas are investigated analytically and numerically. Owing to the large ion-to-electron mass ratio, the motion of plasma ions in-such wake fields has often been assumed to be neglectable. It is shown that when the laser intensity exceeds 10(20) W/cm(2), the ion motion can no longer be ignored. In this case, ion momentum peaks appear behind the laser pulse, which correspond with the ion density peaks. The laser-excited wake field appears to be effective for ion acceleration, in particular to ions with high-charge numbers. The dependence of ion acceleration on the laser intensity, pulse width, and background plasma density is discussed. (c) 2006 Optical Society of America.

Laser-driven coherent betatron oscillation in a laser-wakefield cavity

The origin of beam disparity in emittance and betatron oscillation orbits, in and out of the polarization plane of the drive laser of laser-plasma accelerators, is explained in terms of betatron oscillations driven by the laser field. As trapped electrons accelerate, they move forward and interact with the laser pulse. For the bubble regime, a simple model is presented to describe this interaction in terms of a harmonic oscillator with a driving force from the laser and a restoring force from the plasma wake field. The resulting beam oscillations in the polarization plane, with period approximately the wavelength of the driving laser, increase emittance in that plane and cause microbunching of the beam. These effects are observed directly in 3D particle-in-cell simulations.

Fabrication of an integrated Raman sensor by selective surface metallization using a femtosecond laser oscillator

We demonstrate that a Raman sensor integrated with a micro-heater, a microfluidic chamber, and a surface-enhanced Raman scattering (SERS) substrate can be fabricated in a glass chip by femtosecond laser micromachining. The micro-heater and the SERS substrate are fabricated by selective metallization on the glass surface using a femtosecond laser oscillator, whereas the microfluidic chamber embedded in the glass sample is fabricated by femtosecond laser ablation using a femtosecond laser amplifier. We believed that this new strategy for fabricating multifunctional integrated microchips has great potential application for lab-on-a-chips. (C) 2008 Elsevier B.V. All rights reserved.

Absolute oscillator strengths for iron, copper, cadmium and gold measured by the atomic beam method

Absolute f-values for 7 transitions in the first spectra of 4 elements have been measured using the atomic beam absorption technique. The equivalent widths of the absorption lines are measured with a photoelectric scanner and the atomic beam density is determined by continuously weighing a part of it with a sensitive automatic microbalance. The complete theory is presented and corrections are calculated to cope with gas absorption by the deposit on the microbalance pan and atoms which do not stick to the pan. An additional correction for the failure of the assumption of effusive flow in the formation of the atomic beam at large densities has been measured experimentally.

The following f-values were measured:

Fe: f_λ3720 = 0.0430 ± 8%

Cu: f_λ3247 = 0.427 ± 4.5%, f_λ3274 = 0.206 ± 4.7%, f_λ2492 = 0.0037 ± 9%

Cd: f_λ3261 = 0.00190 ± 7%, f_λ2288 = 1.38 ± 12%

Au: f_λ2428 = 0.283 ± 5.3%

Comparison with other accurately measured f-values, where they exist, shows agreement within experimental errors.