Electrical transport and magnetic properties of La0.5Ca0.5MnO3-y with varying oxygen content

We report the tuning of oxygen content of La0.5Ca0.5MnO3-y and its effect on electrical transport and magnetic properties. A small reduction of oxygen content leads to a decrease in sample resistivity, which is more dramatic at low temperatures. No significant change is seen to occur in the magnetic properties for this case. Further reduction in the oxygen content increases the resistivity remarkably, as compared to the as-prepared sample. The amplitude of the ferromagnetic (FM) transition at 225 K decreases, and the antiferromagnetic (AFM) transition at 130 K disappears. For samples with y=0.17, insulator-metal transition and paramagnetic-ferromagnetic transition occur around 167 K. The results are explained in terms of the effect of oxygen vacancies on the coexistence of the metallic FM phase and the insulating charge ordered AFM phase.

Insulator-metal transition and magnetoresistance of La0.5Ca0.5MnOy induced by tuning the oxygen content

The oxygen content of La0.5Ca0.5MnOy was tuned by annealing the samples at high temperatures in flowing nitrogen with graphite powder nearby. The reduction of oxygen content has dramatic effect on the electrical transport and magnetic properties. The samples with y=2.983, 2.83, and 2.803 show an insulator-metal transition, and an unusual temperature and magnetic-field dependence of the magnetoresistance. The paramagnetic-ferromagnetic transition also shifts to lower temperatures and the antiferromagnetic transition at lower temperature is suppressed. The results are discussed in terms of the effect of oxygen vacancies on the various properties of La0.5Ca0.5MnOy. (C) 2002 American Institute of Physics.

Magnetically tunable nonlinear current-voltage characteristics in oxygen deficient manganite perovskites

(La0.667Ca0.333Mn1-xMO3-delta)-O-x (M = Mg, Li or Re) exhibit insulating behaviour and nonlinear current-voltage (J-E) relationship with voltage-limiting characteristics at temperatures below the ferromagnetic transition (T-c). The high current region is set in at field strengths <60 V/cm. Nonlinearity exponent, alpha in the relation J = kE(alpha) increases inversely with temperature. In presence of an external magnetic field, the J-E curves show higher current density at lower field strengths. Microstructural studies indicate that there is no segregation of secondary phases in the grain boundary regions. There is remarkable changes in p(T) as well as J-E curves with the grain size. Annealing studies in lower p(O2) atmospheres indicate that there is significant out-diffusion of oxygen ions through the grain boundary layer (GBL) regions creating oxygen vacancies in the GBL regions. The concentration of Mn4+ ions is lowered at the GBL due to oxygen vacancies, reducing the probability of hopping and resulting in insulating behaviour. Therefore an insulating barrier is introduced between two conducting grains and the carrier motion between the grains is inhibited. Thus below T-c, where sufficient increase in resistivity is observed the conduction may be arising as a result of spin dependent tunneling across the barrier. External electric field lowers the barrier height and establishes carrier transport across the barrier. Above certain field strength, barrier height diminishes significantly and thereby allowing large number of carriers for conduction, giving rise to highly nonlinear conductivity. (C) 2002 Elsevier Science B.V. All rights reserved.

Novel Mn-doped chalcopyrites

Heavily Mn-doped II-VI-V-2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositing Mn on single crystalline substrate at nearly 400 T in an ultra high vacuum chamber. Well-defined ferromagnetic hysteresis with a saturation behavior appears in the magnetization curve up to above room temperature. The chemical states of the ZDGeP(2):Mn interface has been clarified by a careful in situ photoemission spectroscopy. The as-prepared surface consists of Ge-rich, metallic Mn compound. In and below the sub-surface region, dilute divalent Mn species as precursors of the DMS phase exist. No MnP phase was observed at any stage of the depth profile. Theoretical band-calculation suggests that the system with vacancies (Cd, V-c, Mn)GeP2 or a non-stoichiometric (Cd, Ge, Mn)GeP2 are ferromagnetic and energetically stable although ferromagnetism is not stable in a stoichiometric compound (Cd, Mn)GeP2. (C) 2003 Elsevier Ltd. All rights reserved.

Studies on the structural and ionic transport properties at elevated temperatures of La1-xMnO3 +/-delta synthesized by a wet chemical method

Structural transformation and ionic transport properties are investigated on wet-chemically synthesized La1-xMnO3 (X=0.0-0.18) compositions. Powders annealed in oxygen/air at 1000-1080 K exhibit cubic symmetry and transform to rhombohedral on annealing at 1173-1573 K in air/oxygen. Annealing above 1773 K in air or in argon/helium at 1473 K stabilized distorted rhombohedral or orthorhombic symmetry. Structural transformations are confirmed from XRD and TEM studies. The total conductivity of sintered disks, measured by four-probe technique, ranges from 5 S cm(-1) at 298 K to 105 S cm(-1) at 1273 K. The ionic conductivity measured by blocking electrode technique ranges from 1.0X10(-6) S cm(-1) at 700 K to 2.0X10(-3) S cm(-1) at 1273 K. The ionic transference number of these compositions ranges from 3.0X10(-5) to 5.0X10(-5) at 1273 K. The activation energy deduced from experimental data for ionic conduction and ionic migration is 1.03-1.10 and 0.80-1.00 eV, respectively. The activation energy of formation, association and migration of vacancies ranges from 1.07 to 1.44 eV. (C) 2002 Elsevier Science B.V. All rights reserved.

Transient analysis in Al-doped barium strontium titanate thin films grown by pulsed laser deposition

Thin films of (Ba0.5Sr0.5)TiO3 (BST) with different concentrations of Al doping were grown using a pulsed laser deposition technique. dc leakage properties were studied as a function of Al doping level and compared to that of undoped BST films. With an initial Al doping level of 0.1 at. % which substitutes Ti in the lattice site, the films showed a decrease in the leakage current, however, for 1 at. % Al doping level the leakage current was found to be relatively higher. Current time measurements at elevated temperatures on 1 at. % Al doped BST films revealed space-charge transient type characteristics. A complete analysis of the transient characteristics was carried out to identify the charge transport process through variation of applied electric field and ambient temperature. The result revealed a very low mobility process comparable to ionic motion, and was found responsible for the observed feature. Calculation from ionic diffusivity and charge transport revealed a conduction process associated with an activation energy of around 1 eV. The low mobility charge carriers were identified as oxygen vacancies in motion under the application of electric field. Thus a comprehensive understanding of the charge transport process in highly acceptor doped BST was developed and it was conclusive that the excess of oxygen vacancies created by intentional Al doping give rise to space-charge transient type characteristics. © 2001 American Institute of Physics.

Field emission properties of carbon nanotube arrays with defects and impurities

Field emission from carbon nanotubes (CNTs) in the form of arrays or thin films give rise to several strongly correlated process of electromechanical interaction and degradation. Such processes are mainly due to (1) electron-phonon interaction (2) electromechanical force field leading to stretching of CNTs (3) ballistic transport induced thermal spikes, coupled with high dynamic stress, leading to degradation of emission performance at the device scale. Fairly detailed physics based models of CNTs considering the aspects (1) and (2) above have already been developed by these authors, and numerical results indicate good agreement with experimental results. What is missing in such a system level modeling approach is the incorporation of structural defects and vacancies or charge impurities. This is a practical and important problem due to the fact that degradation of field emission performance is indeed observed in experimental I-V curves. What is not clear from these experiments is whether such degradation in the I-V response is due to dynamic reorientation of the CNTs or due to the defects or due to both of these effects combined. Non-equilibrium Green’s function based simulations using a tight-binding Hamiltonian for single CNT segment show up the localization of carrier density at various locations of the CNTs. About 11% decrease in the drive current with steady difference in the drain current in the range of 0.2-0.4V of the gate voltage was reported in literature when negative charge impurity was introduced at various locations of the CNT over a length of ~20nm. In the context of field emission from CNT tips, a simplistic estimate of defects have been introduced by a correction factor in the Fowler-Nordheim formulae. However, a more detailed physics based treatment is required, while at the same time the device-scale simulation is necessary. The novelty of our present approach is the following. We employ a concept of effective stiffness degradation for segments of CNTs, which is due to structural defects, and subsequently, we incorporate the vacancy defects and charge impurity effects in the Green’s function based approach. Field emission induced current-voltage characteristics of a vertically aligned CNT array on a Cu-Cr substrate is then simulated using a detailed nonlinear mechanistic model of CNTs coupled with quantum hydrodynamics. An array of 10 vertically aligned and each 12 m long CNTs is considered for the device scale analysis. Defect regions are introduced randomly over the CNT length. The result shows the decrease in the longitudinal strain due to defects. Contrary to the expected influence of purely mechanical degradation, this result indicates that the charge impurity and hence weaker transport can lead to a different electromechanical force field, which ultimately can reduce the strain. However, there could be significant fluctuation in such strain field due to electron-phonon coupling. The effect of such fluctuations (with defects) is clearly evident in the field emission current history. The average current also decreases significantly due to such defects.

Effect of oxygen pressure on the grain and domain structure of polycrystalline 0.85PbMg(1/3)Nb(2/3)O(3)-0.15PbTiO(3) thin films studied by scanning probe microscopy

0.85PbMg(1/3)Nb(2/3)O(3)-0.15PbTiO(3) ferroelectric-relaxor thin films have been deposited on La(0.5)nSr(0.5)CoO(3)/(1 1 1) Pt/TiO(2)/SiO(2)/Si by pulsed laser ablation at various oxygen partial pressures in the range 0.05 to 0.4 Torr. All the films have a rhombohedral perovskite structure. The grain morphology and orientation are drastically affected by the oxygen pressure, studied by x-ray diffraction and scanning electron microscopy. The domain structure investigations by dynamic contact electrostatic force microscopy have revealed that the distribution of polar nanoregions and their dynamics is influenced by the grain morphology, orientation and more importantly, oxygen vacancies. The correlation length extracted from autocorrelation function images has shown that the polarization disorder decreases with oxygen pressure up to 0.3 Torr. The presence of polarized domains and their electric field induced switching is discussed in terms of internal bias field and domain wall pinning. Film deposited at 0.4 Torr presents a curious case with unique triangular grain morphology and large polarization disorder.

Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm(-1) in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy. (C) 2011 American Institute of Physics. [doi:10.1063/1.3654151]

Internal displacement reactions in multicomponent oxides: Part I. Line compounds with narrow homogeneity range

Structure and phase transition of LaO1−xF1+2x, prepared by solid-state reaction of La2O3 and LaF3, was investigated by X-ray powder diffraction and differential scanning calorimetry for both positive and negative values of the nonstoichiometric parameter x. The electrical conductivity was investigated as a function of temperature and oxygen partial pressure using AC impedance spectroscopy. Fluoride ion was identified as the migrating species in LaOF by coulometric titration and transport number determined by Tubandt technique and EMF measurements. Activation energy for conduction in LaOF was 58.5 (±0.8) kJ/mol. Conductivity increased with increasing fluorine concentration in the oxyfluoride phase, suggesting that interstitial fluoride ions are more mobile than vacancies. Although the values of ionic conductivity of cubic LaOF are lower, the oxygen partial pressure range for predominantly ionic conduction is larger than that for the commonly used stabilized-zirconia electrolytes. Thermodynamic analysis shows that the oxyfluoride is stable in atmospheres containing diatomic oxygen. However, the oxyfluoride phase can degrade with time at high temperatures in atmospheres containing water vapor, because of the higher stability of HF compared with H2O.

Effect of calcium stoichiometry on the dielectric response of CaCu3Ti4O12 ceramics

CaxCu3Ti4O12 (x=0.90, 0.97, 1.0, 1.1 and 1.15) polycrystalline powders with variation in calcium content were prepared via the oxalate precursor route. The structural, morphological and dielectric properties of the ceramics fabricated using these powders were studied using X-ray diffraction, scanning electron microscope along with energy dispersive X-ray analysis, transmission electron microscopy, electron spin resonance (ESR) spectroscopy and impedance analyzer. The X-ray diffraction patterns obtained for the x = 0.97, 1.0 and 1.1 powdered ceramics could be indexed to a body-centered cubic perovskite related structure associated with the space group Im3. The ESR studies confirmed the absence of oxygen vacancies in the ceramics that were prepared using the oxalate precursor route. The dielectric properties of these suggest that the calcium deficient sample (x = 0.97) has a reduced dielectric loss while retaining the high dielectric constant which is of significant industrial relevance. (C) 2012 Elsevier Ltd. All rights reserved.

Tuning of phonon anharmonicity in pyrochlore titanates: temperature-dependent Raman studies of Sm2Ti2-xZrxO7 (x=0, 1/2, 3/4, and 2)and stuffed spin-ice Ho2+xTi2-xO7-x/2 (x=0, 1/3, and 2/3)

Anomalous temperature dependence of Raman phonon wavenumbers attributed to phononphonon anharmonic interactions has been studied in two different families of pyrochlore titanates. We bring out the role of the ionic size of titanium and the inherent vacancies of pyrochlore in these anomalies by studying the effect of replacement of Ti4?+ by Zr4?+ in Sm2Ti2O7 and by stuffing Ho3?+ in place of Ti4?+ in Ho2Ti2O7 with appropriate oxygen stoichiometry. Our results show that an increase in the concentration of the larger ion, i.e. Zr4?+ or Ho3?+, reduces the phonon anomalies, thus implying a decrease in the phononphonon anharmonic interactions. In addition, we find signatures of coupling between a phonon and crystal field transition in Sm2Ti2O7, manifested as an unusual increase in the phonon intensity with increasing temperature. Copyright (c) 2011 John Wiley & Sons, Ltd.

Effect of selenium addition on the GeTe phase change memory alloys

Compositional dependent investigations of the bulk GeTe chalcogenides alloys added with different selenium concentrations are carried out by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), electron probe micro-analyzer (EPMA) and differential scanning calorimetry (DSC). The measurements reveal that GeTe crystals are predominant in alloys up to 0.20 at.% of Se content indicating interstitial occupancy of Se in the Ge vacancies. Raman modes in the GeTe alloys changes to GeSe modes with the addition of Se. Amorphousness in the alloy increases with increase of Se and 0.50 at.% Se alloy forms a homogeneous amorphous phase with a mixture of Ge-Se and Te-Se bonds. Structural changes are explained with the help of bond theory of solids. Crystallization temperature is found to be increasing with increase of Se, which will enable the amorphous stability. For the optimum 0.50 at.% Se alloy, the melting temperature has reduced which will reduce the RESET current requirement for the phase change memory applications. (C) 2012 Elsevier B.V. All rights reserved.

Nonstoichiometry, defects and thermodynamic properties of YFeO3, YFe2O4 and Y3Fe5O12

Oxygen nonstoichiometry of three ternary oxides. YFeO3-delta, YFe2O4-alpha and Y3Fe5O12-theta. in the system Y-Fe-O was investigated as a function of oxygen partial pressure by thermogravimetry at high temperature. The defects responsible for nonstoichiometry were identified as oxygen vacancies for YFeO3-delta and YFe2O4-alpha although the manner of variation of nonstoichiometric parameter with oxygen partial pressure for these two oxides is quite different. Cation interstitials are the predominant defects in Y3Fe5O12-theta. Gibbs energies of formation of the three nonstoichiometric oxides were determined using solid-state electrochemical cells in the temperature range from 975 to 1475 K. YFe2O4-alpha was found to be stable only above 1391 K. Gibbs energies of formation of the three stoichiometric compounds from their component binary oxides were obtained by combining information from solid state cells with results of thermogravimetric analysis using the Gibbs-Duhem relation. The results can be summarized as: (1/2)Y2O3 + (1/2)Fe2O3 -> YFeO3;Delta G(f(ox))(O)(+/- 250)(J/mol) = 17, 126-8.263T (1/2)Y2O3 + FeO + (1/2)Fe2O3 -> YFe2O4;Delta G(f(ox))(O)(+/- 260)(J/mol) = -10,352-13.24T (3/2)Y2O3 + (5/2)Fe2O3 -> Y3Fe5O12;Delta G(f(ox))(O)(+/- 780)(J/mol) = -56, 647-31.091T. (C) 2012 Elsevier B.V. All rights reserved.

Diffusion mechanism in the gold-copper system

Interdiffusion study is conducted in the Au-Cu system, which has complete solid solution in the higher temperature range and ordered phases in the lower temperature range. First experiments are conducted at higher temperatures, where atoms can diffuse randomly. Higher values of interdiffusion coefficients are found in the range of 40-50 at.% Cu. This trend is explained with the help of thermodynamic factor and possible concentration of vacancies. Following an experiment is conducted at 623 K (350 degrees C), where the ordered phases are grown. The interdiffusion coefficients at this temperature are compared after extrapolating the data calculated at higher temperatures.