Um esquema de Fourier local para análise tempo-frequência de sinais não-estacionários aplicado a ruído eletroquímico

Sinais diversos estão presentes em nosso cotidiano, assim como nas medidas realizadas nas atividades de ciência e tecnologia. Dentre estes sinais, tem grande importância tecnológica aqueles associados à corrosão de estruturas metálicas. Assim, esta tese propõe o estudo de um esquema local de transformada de Fourier janelada, com a janela variando em função da curtose, aplicada a sinais de ruído eletroquímico. A curtose foi avaliada nos domínios do tempo e da frequência e processada pelo programa desenvolvido para esse fim. O esquema foi aplicado a sinais de ruído eletroquímico dos aços UNS S31600, UNS G10200 e UNS S32750 imersos em três soluções: FeCl3 0,1 mol=L (cloreto férrico), H2SO4 5%(ácido sulfúrico) e NaOH 0,1%(hidróxido de sódio). Para os aços inoxidáveis, estas soluções promovem corrosão localizada, uniforme e passivação, respectivamente. Visando testar o desempenho do esquema de Fourier desenvolvido, testes foram realizados utilizando-se inicialmente sinais sintéticos e em seguida sinais de ruído eletroquímico. Notou-se que os sinais têm características de não-estacionaridade e a maior parte da energia está presente em baixa frequência. Os intervalos de tempo e de frequência onde se concentra a maior parte da energia do sinal foram correlacionados. Para os picos máximos dos sinais de potencial e corrente obtidos de amperimetria de resistência nula, a correlação entre eles foi baixa, independente da forma de corrosão presente. Conclui-se que o método se adaptou bastante bem às características locais do sinal eletroquímico permitindo o monitoramento dos espectros tempo-frequência. O fato de ser sensível às características locais do sinal permite analisar aspectos dos sinais que do modo clássico não podem ser diretamente processados. O método da transformada de Fourier janelada variável (Variable Short-Time Fourier Transform - VSTFT) adaptou-se muito bem no monitoramento dos sinais originados de potencial de circuito aberto e amperimetria de resistência nula.

35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 μm with Fourier-limited pulses

We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 1.3 μm. Our investigations show ultrafast absorber recovery times and for the first time transform-limited mode-locked pulses. © 2003 Optical Society of America.

Transient thermal analysis of power devices based on Fourier-series thermal model

A new thermal model based on Fourier series expansion method has been presented for dynamic thermal analysis on power devices. The thermal model based on the Fourier series method has been programmed in MATLAB SIMULINK and integrated with a physics-based electrical model previously reported. The model was verified for accuracy using a two-dimensional Fourier model and a two-dimensional finite difference model for comparison. To validate this thermal model, experiments using a 600V 50A IGBT module switching an inductive load, has been completed under high frequency operation. The result of the thermal measurement shows an excellent match with the simulated temperature variations and temperature time-response within the power module. ©2008 IEEE.

Natural versus artificial scene classification by ordering discrete fourier power spectra

Holistic representations of natural scenes is an effective and powerful source of information for semantic classification and analysis of arbitrary images. Recently, the frequency domain has been successfully exploited to holistically encode the content of natural scenes in order to obtain a robust representation for scene classification. In this paper, we present a new approach to naturalness classification of scenes using frequency domain. The proposed method is based on the ordering of the Discrete Fourier Power Spectra. Features extracted from this ordering are shown sufficient to build a robust holistic representation for Natural vs. Artificial scene classification. Experiments show that the proposed frequency domain method matches the accuracy of other state-of-the-art solutions. © 2008 Springer Berlin Heidelberg.

Fourier analysis and gabor filtering for texture analysis and local reconstruction of general shapes

Since the pioneering work of Gibson in 1950, Shape- From-Texture has been considered by researchers as a hard problem, mainly due to restrictive assumptions which often limit its applicability. We assume a very general stochastic homogeneity and perspective camera model, for both deterministic and stochastic textures. A multi-scale distortion is efficiently estimated with a previously presented method based on Fourier analysis and Gabor filters. The novel 3D reconstruction method that we propose applies to general shapes, and includes non-developable and extensive surfaces. Our algorithm is accurate, robust and compares favorably to the present state of the art of Shape-From- Texture. Results show its application to non-invasively study shape changes with laid-on textures, while rendering and retexturing of cloth is suggested for future work. © 2009 IEEE.

Application of the fractional Fourier transform to the design of LCOS based optical interconnects and fiber switches

It is shown that reflective liquid crystal on silicon (LCOS) spatial light modulator (SLM) based interconnects or fiber switches that use defocus to reduce crosstalk can be evaluated and optimized using a fractional Fourier transform if certain optical symmetry conditions are met. Theoretically the maximum allowable linear hologram phase error compared to a Fourier switch is increased by a factor of six before the target crosstalk for telecom applications of -40 dB is exceeded. A Gerchberg-Saxton algorithm incorporating a fractional Fourier transform modified for use with a reflective LCOS SLM is used to optimize multi-casting holograms in a prototype telecom switch. Experiments are in close agreement to predicted performance. © 2012 Optical Society of America.

Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of ΔEt 0.3 eV and with a density of state distribution as Dt(Et-j)=Dt0exp(-ΔEt/ kT)with Dt0 = 5.02 × 1011 cm-2 eV-1. Such a model is useful for developing simulation tools for circuit design. © 2014 AIP Publishing LLC.