Absolute polarity determination of teeth cementum by phase sensitive second harmonic generation microscopy

The absolute sign of local polarity in relation to the biological growth direction has been investigated for teeth cementum using phase sensitive second harmonic generation microscopy (PS-SHGM) and a crystal of 2-cyclooctylamino-5-nitropyridine (COANP) as a nonlinear optic (NLO) reference material. A second harmonic generation (SHG) response was found in two directions of cementum: radial (acellular extrinsic fibers that are oriented more or less perpendicular to the root surface) and circumferential (cellular intrinsic fibers that are oriented more or less parallel to the surface). A mono-polar state was demonstrated for acellular extrinsic cementum. However, along the different parts of cementum in circumferential direction, two corresponding domains were observed featuring an opposite sign of polarity indicative for a bi-polar microscopic state of cellular intrinsic cementum. The phase information showed that the orientation of radial collagen fibrils of cementum is regularly organized with the donor (D) groups pointing to the surface. Circumferential collagen molecules feature orientational disorder and are oriented up and down in random manner showing acceptor or donor groups at the surface of cementum. Considering that the cementum continues to grow in thickness throughout life, we can conclude that the cementum is growing circumferentially in two opposite directions and radially in one direction. A Markov chain type model for polarity formation in the direction of growth predicts D-groups preferably appearing at the fiber front.

Continuous-variable Einstein-Podolsky-Rosen paradox with traveling-wave second-harmonic generation

The Einstein-Podolsky-Rosen paradox and quantum entanglement are at the heart of quantum mechanics. Here we show that single-pass traveling-wave second-harmonic generation can be used to demonstrate both entanglement and the paradox with continuous variables that are analogous to the position and momentum of the original proposal.

Second harmonic generation in a low-loss orientation-patterned GaAs waveguide

The technology of low-loss orientation-patterned gallium arsenide (OP-GaAs) waveguided crystals was developed and realized by reduction of diffraction scattering on the waveguide pattern. The propagation losses in the OP-GaAs waveguide were estimated to be as low as 2.1 dB/cm, thus demonstrating the efficient second harmonic generation at 1621 nm under an external pumping. © 2013 Optical Society of America.

574-647 nm wavelength tuning by second-harmonic generation from diode-pumped PPKTP waveguides

We present a compact, all-room-temperature continuous-wave laser source in the visible spectral region between 574 and 647 nm by frequency doubling of a broadly tunable InAs/GaAs quantum-dot external-cavity diode laser in a periodically poled potassium titanyl phosphate crystal containing three waveguides with different cross-sectional areas (4 × 4, 3 × 5, and 2 μm × 6 μm). The influence of a waveguide's design on tunability, output power, and mode distribution of second-harmonic generated light, as well as possibilities to increase the conversion efficiency via an optimization of a waveguide's cross-sectional area, was systematically investigated. A maximum output power of 12.04 mW with a conversion efficiency of 10.29% at 605.6 nm was demonstrated in the wider waveguide with the cross-sectional area of 4 μm × 4 μm.

Fractional order of poling period for broadly tunable second harmonic generation

We demonstrate the possibility to use a fractional order of poling period of nonlinear crystal waveguides for tunable second harmonic generation. This approach allows one to extend wavelength coverage in the visible spectral range by frequency doubling in a single crystal waveguide.

Extreme-Ultraviolet-Initated High-Order Harmonic Generation: Driving Inner-Valence Electrons Using Below-Threshold-Energy Extreme-Ultraviolet Light

We propose a novel scheme for resolving the contribution of inner- and outer-valence electrons in XUV-initiated high-harmonic generation in neon. By probing the atom with a low energy (below the 2s ionisation threshold) ultrashort XUV pulse, the 2p electron is steered away from the core, while the 2s electron is enabled to describe recollision trajectories. By selectively suppressing the 2p recollision trajectories we can resolve the contribution of the 2s electron to the high-harmonic spectrum. We apply the classical trajectory model to account for the contribution of the 2s electron, which allows for an intuitive understanding of the process.

Enhancement of ultrafast four-wave mixing in a polar molecule medium

We investigate the ultrafast four-wave mixing (FWM) with two-color few-cycle ultrashort pulses propagating in a two-level polar molecule medium. It is found that the enhancement of FWM can be achieved even for low intensity pulses due to the effects of permanent dipole moments (PDM) in polar molecules. Moreover, the conversion efficiency of FWM can be controlled by the carrier-envelope phases (CEP) of two ultrashort pulses. (c) 2006 Optical Society of America

Analysis of beam-quality degradation in nonlinear frequency conversion

Based on the ripple transfers of electric-field amplitude and phase in frequency tripling, simple formulas are derived for the harmonic laser's beam-quality factor M-3omega(2), with an arbitrary fundamental incidence to ideal nonlinear crystals. Whereas the harmonic beam's quality is generally degraded, the beam's divergence is similar to that of the fundamental after nonlinear frequency conversion. For practical crystals with periodic surface ripples that are caused by their machining, a multiorder diffractive model is presented with which the focusing properties of harmonic beams can be studied. Predictions of the theories are shown to be in excellent agreement with full numerical simulations. (C) 2002 Optical Society of America.

Non-resonant third-order non-linear optical properties of amorphous GeSe2 film

The real and imaginary parts of third-order susceptibility of amorphous GeSe2 film were measured by the method of the femtosecond optical heterodyne detection of optical Kerr effect at 805 nm with the 80 fs ultra fast pulses. The results indicated that the values of real and imaginary parts were 8.8 x 10(-12) esu and -3.0 x 10(-12) esu, respectively. An amorphous GeSe2 film also showed a very fast response within 200 fs. The ultra fast response and large third-order non-linearity are attributed to the ultra fast distortion of the electron orbits surrounding the average positions of the nucleus of Ge and Se atoms. (c) 2005 Elsevier B.V. All rights reserved.