Investigation on mechanism of critical cavitating flow in liquid jet pumps under operating limits

The critical cavitating flow in liquid jet pumps under operating limits is investigated in this paper. Measurements on the axial pressure distribution along the wall of jet pumps indicate that two-phase critical flow occurs in the throat pipe under operating limits. The entrained flow rate and the distribution of the wall pressure upstream lowest pressure section does not change when the outlet pressure is lower than a critical value. A liquid-vapor mixing shockwave is also observed under operating limits. The wave front moves back and forth in low frequency around the position of the lowest pressure. With the measured axial wall pressures, the Mach number of the two-phase cavitating flow is calculated. It's found that the maximum Mach number is very close to I under operating limits. Further analysis infers a cross-section where Mach number approaches to I near the wave front. Thus, the liquid-vapor mixture velocity should reach the local sound velocity and resulting in the occurrence of operating limits.

Modelling Study On The Plasma Flow and Heat Transfer In A Laminar Arc Plasma Torch Operating At Atmospheric and Reduced Pressure

A modelling study is performed to investigate the characteristics of both plasma flow and heat transfer of a laminar non-transferred arc argon plasma torch operated at atmospheric and reduced pressure. It is found that the calculated flow fields and temperature distributions are quite similar for both cases at a chamber pressure of 1.0 atm and 0.1 atm. A fully developed flow regime could be achieved in the arc constrictor-tube between the cathode and the anode of the plasma torch at 1.0 atm for all the flow rates covered in this study. However the flow field could not reach the fully developed regime at 0.1 atm with a higher flow rate. The arc-root is always attached to the torch anode surface near the upstream end of the anode, i.e. the abruptly expanded part of the torch channel, which is in consistence with experimental observation. The surrounding gas would be entrained from the torch exit into the torch interior due to a comparatively large inner diameter of the anode channel compared to that of the arc constrictor-tube.

Fluctuation characteristics of arc voltage and jet flow in a non-transferred dc plasma generated at reduced pressure

A torch with a set of inter-electrode inserts between the cathode and the anode/nozzle with a wide nozzle exit was designed to generate plasma jets at chamber pressures of 500–10 000 Pa. The variation of the arc voltage was examined with the change in working parameters such as gas flow rate and chamber pressure. The fluctuation in the arc voltage was recorded with an oscilloscope, and the plasma jet fluctuation near the torch exit was observed with a high-speed video camera and detected with a double-electrostatic probe. Results show that the 300 Hz wave originated from the tri-phase rectified power supply was always detected under all generating conditions. Helmholtz oscillations over 3000 Hz was detected superposed on the 300 Hz wave at gas flow rates higher than 8.8 slm with a peak to valley amplitude lower than 5% of the average voltage value. No appreciable voltage fluctuation caused by the irregular arc root movement is detected, and mechanisms for the arc voltage and jet flow fluctuations are discussed.

Recuperação de cobre de rejeitos de galvanoplastia utilizando resinas de troca iônica

Neste estudo, a sorção e recuperação de íons metálicos de resíduos sólidos industriais provenientes de uma indústria de galvanoplastia situada no Rio de Janeiro (Brasil) foram investigadas através da utilização de duas resinas comerciais de troca iônica: Lewatit VPOC 1800 (fortemente ácida, tipo gel) e Lewatit VPOC 1960 (fortemente básica, tipo gel), produzidas pela Lanxess-Bayer Chemicals. As características físico-quimicas das resinas e do lodo galvânico foram determinadas. Os estudos de sorção das resinas foram conduzidos em batelada e em coluna. Baseado nesses estudos, os parâmetros de sorção e das curvas de ruptura foram determinados. Os estudos de equilíbrio e cinética de sorção também foram realizados. O resíduo de galvanoplastia era composto pelos metais: Cu2+, Fe3+, Al3+, Ni2+ e Cr3+. A capacidade de sorção qe das resinas Lewatit VPOC 1800 variou entre 0,1-1,9 mg g-1 para Cu2+, 0,01-0,6 mg g-1 para Fe3+ e 0,2-0,4 mg g-1 para Al3+. Enquanto que para a resina Lewatit VPOC 1960, os valores de qe variou entre 0,01-0,4 mg g-1 para Cu2+ e 0,01 0,2 mg g-1 para Fe3+ dependendo da concentração do metal e do tempo de contato. A capacidade de sorção para a resina Lewatit VPOC 1960 foi restrita para íons Cu2+ e Fe3+ os quais formam complexos aniônicos com íons Cl-. O modelo de Freundlich foi o mais adequado para descrever o equilíbrio de troca iônica de ambas as resinas. Já em relação ao mecanismo de sorção, o modelo pseudo-segunda ordem tipo 1 foi o mais aplicável. O ponto de ruptura das resinas Lewatit VPOC 1800 e Lewatit VPOC 1960 em relação aos íons Cu2+ocorreu quando passou através da coluna, 1860 cm3 e 2220 cm3 de solução de resíduo sólido respectivamente (20 g de resina, 100 mg L-1 de íons Cu2+, vazão de 60 cm3 min-1). Os íons metálicos Cu2+, Fe3+, Al3+, foram dessorvidos em alta proporção da resina Lewatit VPOC 1800 passando pela coluna solução aquosa de H2SO4 2,4 mol L-1. Já os metais Cu2+ e Fe3+ foram eluídos da resina Lewatit VPOC 1960 com solução aquosa de HCl 2,0 mol L-1. A recuperação seletiva de Cu2+ não foi alcançada porque Cu2+ e Fe3+ precipitam na mesma faixa de pH

Desenvolvimento e avaliação de novas abordagens de modelagem de processos de separação em leito móvel simulado

O Leito Móvel Simulado (LMS) é um processo de separação de compostos por adsorção muito eficiente, por trabalhar em um regime contínuo e também possuir fluxo contracorrente da fase sólida. Dentre as diversas aplicações, este processo tem se destacado na resolução de petroquímicos e principalmente na atualidade na separação de misturas racêmicas que são separações de um grau elevado de dificuldade. Neste trabalho foram propostas duas novas abordagens na modelagem do LMS, a abordagem Stepwise e a abordagem Front Velocity. Na modelagem Stepwise as colunas cromatográficas do LMS foram modeladas com uma abordagem discreta, onde cada uma delas teve seu domínio dividido em N células de mistura interligadas em série, e as concentrações dos compostos nas fases líquida e sólida foram simuladas usando duas cinéticas de transferência de massa distintas. Essa abordagem pressupõe que as interações decorrentes da transferência de massa entre as moléculas do composto nas suas fases líquida e sólida ocorram somente na superfície, de forma que com essa suposição pode-se admitir que o volume ocupado por cada molécula nas fases sólida e líquida é o mesmo, o que implica que o fator de residência pode ser considerado igual a constante de equilíbrio. Para descrever a transferência de massa que ocorre no processo cromatográfico a abordagem Front Velocity estabelece que a convecção é a fase dominante no transporte de soluto ao longo da coluna cromatográfica. O Front Velocity é um modelo discreto (etapas) em que a vazão determina o avanço da fase líquida ao longo da coluna. As etapas são: avanço da fase líquida e posterior transporte de massa entre as fases líquida e sólida, este último no mesmo intervalo de tempo. Desta forma, o fluxo volumétrico experimental é utilizado para a discretização dos volumes de controle que se deslocam ao longo da coluna porosa com a mesma velocidade da fase líquida. A transferência de massa foi representada por dois mecanismos cinéticos distintos, sem (tipo linear) e com capacidade máxima de adsorção (tipo Langmuir). Ambas as abordagens propostas foram estudadas e avaliadas mediante a comparação com dados experimentais de separação em LMS do anestésico cetamina e, posteriormente, com o fármaco Verapamil. Também foram comparados com as simulações do modelo de equilíbrio dispersivo para o caso da Cetamina, usado por Santos (2004), e para o caso do Verapamil (Perna 2013). Na etapa de caracterização da coluna cromatográfica as novas abordagens foram associadas à ferramenta inversa R2W de forma a determinar os parâmetros globais de transferência de massa apenas usando os tempos experimentais de residência de cada enantiômero na coluna de cromatografia líquida de alta eficiência (CLAE). Na segunda etapa os modelos cinéticos desenvolvidos nas abordagens foram aplicados nas colunas do LMS com os valores determinados na caracterização da coluna cromatográfica, para a simulação do processo de separação contínua. Os resultados das simulações mostram boa concordância entre as duas abordagens propostas e os experimentos de pulso para a caracterização da coluna na separação enantiomérica da cetamina ao longo do tempo. As simulações da separação em LMS, tanto do Verapamil quando da Cetamina apresentam uma discrepância com os dados experimentais nos primeiros ciclos, entretanto após esses ciclos iniciais a correlação entre os dados experimentais e as simulações. Para o caso da separação da cetamina (Santos, 2004), a qual a concentração da alimentação era relativamente baixa, os modelos foram capazes de predizer o processo de separação com as cinéticas Linear e Langmuir. No caso da separação do Verapamil (Perna, 2013), onde a concentração da alimentação é relativamente alta, somente a cinética de Langmuir representou o processo, devido a cinética Linear não representar a saturação das colunas cromatográficas. De acordo como o estudo conduzido ambas as abordagens propostas mostraram-se ferramentas com potencial na predição do comportamento cromatográfico de uma amostra em um experimento de pulso, assim como na simulação da separação de um composto no LMS, apesar das pequenas discrepâncias apresentadas nos primeiros ciclos de trabalho do LMS. Além disso, podem ser facilmente implementadas e aplicadas na análise do processo, pois requer um baixo número de parâmetros e são constituídas de equações diferenciais ordinárias.

Experimental study of tip clearance flow in a radial inflow turbine

This paper describes an experimental investigation of tip clearance flow in a radial inflow turbine. Flow visualization and static pressure measurements were performed. These were combined with hot-wire traverses into the tip gap. The experimental data indicates that the tip clearance flow in a radial turbine can be divided into three regions. The first region is located at the rotor inlet, where the influence of relative casing motion dominates the flow over the tip. The second region is located towards midchord, where the effect of relative casing motion is weakened. Finally a third region exists in the exducer, where the effect of relative casing motion becomes small and the leakage flow resembles the tip flow behaviour in an axial turbine. Integration of the velocity profiles showed that there is little tip leakage in the first part of the rotor because of the effect of scraping. It was found that the bulk of tip leakage flow in a radial turbine passes through the exducer. The mass flow rate, measured at four chordwise positions, was compared with a standard axial turbine tip leakage model. The result revealed the need for a model suited to radial turbines. The hot-wire measurements also indicated a higher tip gap loss in the exducer of the radial turbine. This explains why the stage efficiency of a radial inflow turbine is more affected by increasing the radial clearance than by increasing the axial clearance.

An improved technique to measure axial variation in wall flow along the channels of a diesel particulate filter

A technique to measure wall flow variation in Diesel Particle Filters (DPFs) is described. In a recent paper, it was shown how the flow distribution in DPFs could be measured in a non-destructive manner. This involved measuring the progressive dilution of a tracer gas introduced at the "outlet" channel upstream end. In the present paper, a significant further improvement to this technique is described, in which only a single probe is required, rather than the two of the previous technique. The single, traversable, probe consists of a controllable flow sink, and slightly downstream, a tracer gas supply. By controlling the sink flow rate such that a very small concentration of tracer gas is aspirated into it, the total flow up to that location in the channel is determined. Typical results showing the axial variation in the wall flow for known wall blockage cases are presented. It is suggested that this technique could be used to interpret the soot loading in the filter channels in a non-intrusive way.

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.

Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells

The effects of pre-TMIn flow prior to QW growth and TMIn flow rates during QW growth on the interface and optical properties of InGaN/GaN MQWs were investigated. Pre-depositing indium prior to QW growth and an appropriate TMIn flow rate can improve the interface abruptness and increase the EL intensity. InGaN/GaN MQWs with improved interface abruptness have increasing emission intensity and wavelength. We attribute the interface improvement and the increase of EL intensity to the improvement of the indium compositional profiles. (C) 2004 Elsevier B.V. All rights reserved.

Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets

Transport phenomena in radial flow metalorganic chemical vapor deposition (MOCVD) reactor with three concentric vertical inlets are studied by two-dimensional numerical modeling. By varying the parameters such as gas pressure, flow rates combination of multi-inlets, geometric shapes and sizes of reactor and flow distributor, temperatures of susceptor and ceiling, and susceptor rotation, the corresponding velocity, temperature, and concentration fields inside the reactor are obtained; the onset and change of flow recirculation cells under influences of those parameters are determined. It is found that recirculation cells, originated from flow separation near the bend of reactor inlets, are affected mainly by the reactor height and shape, the operating pressure, the flow rates combination of multi-inlets, and the mean temperature between susceptor and ceiling. By increasing the flow rate of mid-inlet and the mean temperature, decreasing the pressure, maintaining the reactor height below certain criteria, and trimming the bends of reactor wall and flow distributor to streamlined shape, the recirculation cells can be minimized so that smooth and rectilinear flow prevails in the susceptor region, which corresponds to smooth and rectilinear isotherms and larger reactant concentration near the susceptor. For the optimized reactor shape, the reactor size can be enlarged to diameter D = 40 cm and height H = 2 cm without flow recirculation. The susceptor rotation over a few hundred rpm around the reactor central axis will induce the recirculation cell near the exit and deflect the streamlines near the susceptor, which is not the case for vertical reactors. (c) 2006 Elsevier B.V. All rights reserved.

Epitaxial growth of GaNAs/GaAs heterostructure materials

A series of systematic experiments on the growth of high quality GaNAs strained layers on GaAs (001) substrate have been carried out by using DC active Nz plasma, assisted molecular beam epitaxy. The samples of GaNAs between 3 and 200 nm thick were evaluated by double crystal X-ray diffraction (XRD) and photoluminescence (PL) measurements. PL and XRD measurements for these samples are in good agreement. Some material growth and structure parameters affecting the properties of GaNAs/GaAs heterostructure were studied; they were: (1) growth temperature of GaNAs epilayer; (2) electrical current of active N-2 plasma; (3) Nz flow rate; (4) GaNAs growth rate; (5) the thickness of GaNAs strained layer. XRD and PL measurements showed that superlattice with distinct satellite peaks up to two orders and quantum well structure with intensity at 22 meV Fourier transform infrared spectroscopy (FWHM) can be achieved in molecular beam epitaxy (MBE) system. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

The growth rate of GaN buffer layers on sapphire grown by metalorganic vapor-phase epitaxy (MOVPE) in an atmospheric pressure, two-channel reactor was studied. The growth rate, as measured using laser reflectance, was found to be dependent on growth temperature, molar flow rate of the sources tin this case, trimethylgallium and ammonia) and the input configuration of sources into the reactor. A model of the GaN buffer layer growth process by MOVPE is proposed to interpret the experimental evidence. (C) 1998 Elsevier Science B.V. All rights reserved.

The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure

An AlGaN/GaN HBT structure was grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. From the high-resolution x-ray diffraction and transmission electron microscopy (TEM) measurements, it was indicated that the structure is of good quality and the AlGaN/GaN interfaces are abrupt and smooth. In order to obtain the values of Si doping and electronic concentrations in the AlGaN emitter and GaN emitter cap layers, Secondary Ion Mass Spectroscopy (SIMS) and electrochemical CV measurements were carried out. The results showed that though the flow rate of silane (SiH4) in growing the AlGaN emitter was about a quarter of that in growing GaN emitter cap and subcollector layer, the Si sputtering yield in GaN cap layer was much smaller than that in the AlGaN emitter layer. The electronic concentration in GaN was about half of that in the AlGaN emitter layer. It is proposed that the Si, Al co-doping in growing the AlGaN emitter layer greatly enhances the Si dopant efficiency in the AlGaN alloy. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

Continuous-flow polymerase chain reaction microfluidics by using spiral capillary channel embedded on copper

This paper presents a novel method for performing polymerase chain reaction (PCR) amplification by using spiral channel fabricated on copper where a transparent polytetrafluoroethylene ( PTFE) capillary tube was embedded. The channel with 25 PCR cycles was gradually developed in a spiral manner from inner to outer. The durations of PCR mixture at the denaturation, annealing and extension zones were gradually lengthened at a given flow rate, which may benefit continuous-flow PCR amplification as the synthesis ability of the Taq polymerase enzyme usually weakens with PCR time. Successful continuous-flow amplification of DNA fragments has been demonstrated. The PCR products of 249, 500 and 982 bp fragments could be obviously observed when the flow rates of PCR mixture were 7.5, 7.5 and 3.0 mm s(-1), respectively, and the required amplification times were about 25, 25, and 62 min, respectively. Besides, the successful segmented-flow PCR of three samples ( 249, 500 and 982 bp) has also been reported, which demonstrates the present continuous-flow PCR microfluidics can be developed for high-throughput genetic analysis.

Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition (PECVD) silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiN_x:H by HF solution. A low etch rate was achieved by increasing the SiH_4 gas flow rate or annealing temperature, or decreasing the NH_3 and N_2 gas flow rate. Concen-trated, buffered, and dilute hydrofluoric acid were utilized as etchants for SiO_2 and SiN_x:H. A high etching selectivity of SiO_2 over SiN_x:H was obtained using highly concentrated buffered HF.