Analysis of the effect of transverse modes on free-space optical interconnect performance

Vertical-cavity surface-emitting lasers (VCSELs) and microlenses can be used to implement free space optical interconnects (FSOIs) which do not suffer from the bandwidth limitations inherent in metallic interconnects. A comprehensive link equation describing the effects of both optical and electrical noise is introduced. We have evaluated FSOI performance by examining the following metrics: the space-bandwidth product (SBP), describing the density of channels and aggregate bandwidth that can be achieved, and the carrier-to-noise ratio (CNR), which represents the relative strength of the carrier signal. The mode expansion method (MEM) was used to account for the primary cause of optical noise: laser beam diffraction. While the literature commonly assumes an ideal single-mode laser beam, we consider the experimentally determined multimodal structure of a VCSEL beam in our calculations. It was found that maximum achievable interconnect length and density for a given CNR was significantly reduced when the higher order transverse modes were present in Simulations. However, the Simulations demonstrate that free-space optical interconnects are still a suitable solution for the communications bottleneck, despite the adverse effects introduced by transverse modes.

A compact, portable and low cost generic interrogation strain sensor system using an embedded VCSEL, detector and fibre Bragg grating

We present a compact, portable and low cost generic interrogation strain sensor system using a fibre Bragg grating configured in transmission mode with a vertical-cavity surface-emitting laser (VCSEL) light source and a GaAs photodetector embedded in a polymer skin. The photocurrent value is read and stored by a microcontroller. In addition, the photocurrent data is sent via Bluetooth to a computer or tablet device that can present the live data in a real time graph. With a matched grating and VCSEL, the system is able to automatically scan and lock the VCSEL to the most sensitive edge of the grating. Commercially available VCSEL and photodetector chips are thinned down to 20 µm and integrated in an ultra-thin flexible optical foil using several thin film deposition steps. A dedicated micro mirror plug is fabricated to couple the driving optoelectronics to the fibre sensors. The resulting optoelectronic package can be embedded in a thin, planar sensing sheet and the host material for this sheet is a flexible and stretchable polymer. The result is a fully embedded fibre sensing system - a photonic skin. Further investigations are currently being carried out to determine the stability and robustness of the embedded optoelectronic components. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

A compact, portable and low cost generic interrogation strain sensor system using an embedded VCSEL, detector and fibre Bragg grating

We present a compact, portable and low cost generic interrogation strain sensor system using a fibre Bragg grating configured in transmission mode with a vertical-cavity surface-emitting laser (VCSEL) light source and a GaAs photodetector embedded in a polymer skin. The photocurrent value is read and stored by a microcontroller. In addition, the photocurrent data is sent via Bluetooth to a computer or tablet device that can present the live data in a real time graph. With a matched grating and VCSEL, the system is able to automatically scan and lock the VCSEL to the most sensitive edge of the grating. Commercially available VCSEL and photodetector chips are thinned down to 20 µm and integrated in an ultra-thin flexible optical foil using several thin film deposition steps. A dedicated micro mirror plug is fabricated to couple the driving optoelectronics to the fibre sensors. The resulting optoelectronic package can be embedded in a thin, planar sensing sheet and the host material for this sheet is a flexible and stretchable polymer. The result is a fully embedded fibre sensing system - a photonic skin. Further investigations are currently being carried out to determine the stability and robustness of the embedded optoelectronic components. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

High-temperature characteristics of GaInNAs/GaAs single-quantum-well lasers grown by plasma-assisted molecular beam epitaxy

GaInNAs/GaAs single-quantum-well (SQW) lasers have been grown by solid-source molecular beam epitaxy. N is introduced by a home-made de-active plasma source. Incorporation of N into InGaAs decreases the bandgap significantly. The highest N concentration of 2.6% in a GaInNAs/GaAs QW is obtained, corresponding to the photoluminescence (PL) peak wavelength of 1.57 mum at 10 K. The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations. Rapid thermal annealing at 850 degrees C could significantly improve the crystal quality of the QWs. An optimum annealing time of 5s at 850 degrees C was obtained. The GalnNAs/GaAs SQW laser emitting at 1.2 mum exhibits a high characteristic temperature of 115 K in the temperature range of 20 degrees C- 75 degrees C.

Pulse shortening of gain switched single mode semiconductor lasers using a variable delay interferometer

We propose a pulse shaping and shortening technique for pulses generated from gain switched single mode semiconductor lasers, based on a Mach Zehnder interferometer with variable delay. The spectral and temporal characteristics of the pulses obtained with the proposed technique are investigated with numerical simulations. Experiments are performed with a Distributed Feedback laser and a Vertical Cavity Surface Emitting Laser, emitting at 1.5 µm, obtaining pulse duration reduction of 25-30%. The main asset of the proposed technique is that it can be applied to different devices and pulses, taking advantage of the flexibility of the gain switching technique.

32 Gb/s multilevel modulation of an 850 nm VCSEL for next-generation datacommunication standards

An 850 nm vertical-cavity surface-emitting laser is modulated at 32 Gb/s using pulse-amplitude modulation with four levels. Transmitter predistortion generates an optimized modulation waveform, which requires a receiver bandwidth of only 15 GHz. © 2011 OSA.

28 Gb/s unequalized PAM3 modulation of an 850 nm VCSEL for next-generation datacommunication links

An 850 nm vertical-cavity surface-emitting laser is modulated at 28 Gb/s using pulseamplitude modulation with three levels. Unequalized transmission over 100 m of OM3 MMF is demonstrated, with advantages over NRZ and PAM4 modulation. © 2012 OSA.

Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals

The authors developed an inductively coupled plasma etching process for the fabrication of hole-type photonic crystals in InP. The etching was performed at 70 degrees C using BCl3/Cl-2 chemistries. A high etch rate of 1.4 mu m/min was obtained for 200 nm diameter holes. The process also yields nearly cylindrical hole shape with a 10.8 aspect ratio and more than 85 degrees straightness of the smooth sidewall. Surface-emitting photonic crystal laser and edge emitting one were demonstrated in the experiments.

1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy

The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

Hybrid CMOS/VCSEL optoelectronic modules

We report some investigations on vertical cavity surface emitting laser (VCSEL) arrays and VCSEL based optoelectronic smart photonic multiple chip modules (MCM), consisting of 1x16 vertical cavity surface emitting laser array and 16-channel lasers driver 0.35 Pin CMOS circuit. The hybrid integrated multiple chip modules based on VCSEL operate at more than 2GHz in -3dB frequency bandwidth.

Low-Cost Micromechanically Tunable Optical Devices: Strained Resonator Engineering, Technological Implementation and Characterization

The rapid growth of the optical communication branches and the enormous demand for more bandwidth require novel networks such as dense wavelength division multiplexing (DWDM). These networks enable higher bitrate transmission using the existing optical fibers. Micromechanically tunable optical microcavity devices like VCSELs, Fabry-Pérot filters and photodetectors are core components of these novel DWDM systems. Several air-gap based tunable devices were successfully implemented in the last years. Even though these concepts are very promising, two main disadvantages are still remaining. On the one hand, the high fabrication and integration cost and on the other hand the undesired adverse buckling of the suspended membranes. This thesis addresses these two problems and consists of two main parts: • PECVD dielectric material investigation and stress control resulting in membranes shape engineering. • Implementation and characterization of novel tunable optical devices with tailored shapes of the suspended membranes. For this purposes, low-cost PECVD technology is investigated and developed in detail. The macro- and microstress of silicon nitride and silicon dioxide are controlled over a wide range. Furthermore, the effect of stress on the optical and mechanical properties of the suspended membranes and on the microcavities is evaluated. Various membrane shapes (concave, convex and planar) with several radii of curvature are fabricated. Using this resonator shape engineering, microcavity devices such as non tunable and tunable Fabry-Pérot filters, VCSELs and PIN photodetectors are succesfully implemented. The fabricated Fabry-Pérot filters cover a spectral range of over 200nm and show resonance linewidths down to 1.5nm. By varying the stress distribution across the vertical direction within a DBR, the shape and the radius of curvature of the top membrane are explicitely tailored. By adjusting the incoming light beam waist to the curvature, the fundamental resonant mode is supported and the higher order ones are suppressed. For instance, a tunable VCSEL with 26 nm tuning range, 400µW maximal output power, 47nm free spectral range and over 57dB side mode suppresion ratio (SMSR) is demonstrated. Other technologies, such as introducing light emitting organic materials in microcavities are also investigated.

Ultrashort pulse generation from diode laser devices

This thesis presents a detailed, experiment-based study of generation of ultrashort optical pulses from diode lasers. Simple and cost-effective techniques were used to generate high power, high quality optical short pulses at various wavelength windows. The major achievements presented in the thesis is summarised as follows. High power pulses generation is one of the major topics discussed in the thesis. Although gain switching is the simplest way for ultrashort pulse generation, it proves to be quite effective to deliver high energy pulses on condition that the pumping pulses with extremely fast rising time and high enough amplitude are applied on specially designed pulse generators. In the experiment on a grating-coupled surface emitting laser (GCSEL), peak power as high as 1W was achieved even when its spectral bandwidth was controlled within 0.2nm. Another experiment shows violet picosecond pulses with peak power as high as 7W was achieved when the intensive electrical pulses were applied on optimised DC bias to pump on InGaN violet diode laser. The physical mechanism of this phenomenon, as we considered, may attributed to the self-organised quantum dots structure in the laser. Control of pulse quality, including spectral quality and temporal profile, is an important issue for high power pulse generation. The ways to control pulse quality described in the thesis are also based on simple and effective techniques. For instance, GCSEL used in our experiment has a specially designed air-grating structure for out-coupling of optical signals; hence, a tiny flat aluminium mirror was placed closed to the grating section and resulted in a wavelength tuning range over 100nm and the best side band suppression ratio of 40dB. Self-seeding, as an effective technique for spectral control of pulsed lasers, was demonstrated for the first time in a violet diode laser. In addition, control of temporal profile of the pulse is demonstrated in an overdriven DFB laser. Wavelength tuneable fibre Bragg gratings were used to tailor the huge energy tail of the high power pulse. The whole system was compact and robust. The ultimate purpose of our study is to design a new family of compact ultrafast diode lasers. Some practical ideas of laser design based on gain-switched and Q-switched devices are also provided in the end.

Bessel beams from semiconductor light sources

We report on recent progress in the generation of non-diffracting (Bessel) beams from semiconductor light sources including both edge-emitting and surface-emitting semiconductor lasers as well as light-emitting diodes (LEDs). Bessel beams at the power level of Watts with central lobe diameters of a few to tens of micrometers were achieved from compact and highly efficient lasers. The practicality of reducing the central lobe size of the Bessel beam generated with high-power broad-stripe semiconductor lasers and LEDs to a level unachievable by means of traditional focusing has been demonstrated. We also discuss an approach to exceed the limit of power density for the focusing of radiation with high beam propagation parameter M2. Finally, we consider the potential of the semiconductor lasers for applications in optical trapping/tweezing and the perspectives to replace their gas and solid-state laser counterparts for a range of implementations in optical manipulation towards lab-on-chip configurations. © 2014 Elsevier Ltd.

Injection Locked Clocking and Transmitter Equalization Techniques for Chip to Chip Interconnects

Semiconductor technology scaling has enabled drastic growth in the computational capacity of integrated circuits (ICs). This constant growth drives an increasing demand for high bandwidth communication between ICs. Electrical channel bandwidth has not been able to keep up with this demand, making I/O link design more challenging. Interconnects which employ optical channels have negligible frequency dependent loss and provide a potential solution to this I/O bandwidth problem. Apart from the type of channel, efficient high-speed communication also relies on generation and distribution of multi-phase, high-speed, and high-quality clock signals. In the multi-gigahertz frequency range, conventional clocking techniques have encountered several design challenges in terms of power consumption, skew and jitter. Injection-locking is a promising technique to address these design challenges for gigahertz clocking. However, its small locking range has been a major contributor in preventing its ubiquitous acceptance.

In the first part of this dissertation we describe a wideband injection locking scheme in an LC oscillator. Phase locked loop (PLL) and injection locking elements are combined symbiotically to achieve wide locking range while retaining the simplicity of the latter. This method does not require a phase frequency detector or a loop filter to achieve phase lock. A mathematical analysis of the system is presented and the expression for new locking range is derived. A locking range of 13.4 GHz–17.2 GHz (25%) and an average jitter tracking bandwidth of up to 400 MHz are measured in a high-Q LC oscillator. This architecture is used to generate quadrature phases from a single clock without any frequency division. It also provides high frequency jitter filtering while retaining the low frequency correlated jitter essential for forwarded clock receivers.

To improve the locking range of an injection locked ring oscillator; QLL (Quadrature locked loop) is introduced. The inherent dynamics of injection locked quadrature ring oscillator are used to improve its locking range from 5% (7-7.4GHz) to 90% (4-11GHz). The QLL is used to generate accurate clock phases for a four channel optical receiver using a forwarded clock at quarter-rate. The QLL drives an injection locked oscillator (ILO) at each channel without any repeaters for local quadrature clock generation. Each local ILO has deskew capability for phase alignment. The optical-receiver uses the inherent frequency to voltage conversion provided by the QLL to dynamically body bias its devices. A wide locking range of the QLL helps to achieve a reliable data-rate of 16-32Gb/s and adaptive body biasing aids in maintaining an ultra-low power consumption of 153pJ/bit.

From the optical receiver we move on to discussing a non-linear equalization technique for a vertical-cavity surface-emitting laser (VCSEL) based optical transmitter, to enable low-power, high-speed optical transmission. A non-linear time domain optical model of the VCSEL is built and evaluated for accuracy. The modelling shows that, while conventional FIR-based pre-emphasis works well for LTI electrical channels, it is not optimum for the non-linear optical frequency response of the VCSEL. Based on the simulations of the model an optimum equalization methodology is derived. The equalization technique is used to achieve a data-rate of 20Gb/s with power efficiency of 0.77pJ/bit.

1.55-μm VCSEL transmission performance up to 20 Gb/s for access networks

We experimentally demonstrate for the first time 1.55μm vertical-cavity surface-emitting laser (VCSEL) transmission over 6.5 km single mode fiber (SMF) at 20 Gb/s for optical access networks. Characterization of the device is also investigated. © 2009 IEEE.