Design of high-efficiency diffraction gratings based on rigorous coupled-wave analysis for 800nm wavelength

We report on the design of a high diffraction efficiency multi-layer dielectric grating with wide incident angle and broad bandwidth for 800 nm. The optimized grating can achieve > 95% diffraction efficiency in the first order at an incident angle of 5 degrees from Littrow and a wavelength from 770nm to 830 nm, with peak diffraction efficiency of > 99.5% at 800 nm. The electric field distribution of the optimized multi-layer dielectric grating within the gratings ridge is 1.3 times enhancement of the incidence light, which presents potential high laser resistance ability. Because of its high-efficiency, wide incident, broad bandwidth and potential high resistance ability, the multi-layer dielectric grating should have practical application in Ti:sapphire laser systems.

Influence of SiO2 additional layers on the laser induced damage threshold of Ta2O5 films

A series or Ta2O5 films with different SiO2 additional layers including overcoat, undercoat and interlayer was prepared by electron beam evaporation under the same deposition process. Absorption of samples was measured using the surface thermal lensing (STL) technique. The electric field distributions of the samples were theoretical predicted using thin film design software (TFCalc). The laser induced damage threshold (LIDT) was assessed using an Nd:YAG laser operating at 1064 nm with a pulse length of 12 ns. It was found that SiO2 additional layers resulted in a slight increase of the absorption, whereas they exerted little influence on the microdefects. The electric field distribution among the samples was unchanged by adding an SiO2 overcoat and undercoat, yet was changed by adding an interlayer. SiO2 undercoat. The interlayer improved the LIDT greatly, whereas the SiO2 overcoat had little effect on the LIDT. (C) 2007 Elsevier Ltd. All rights reserved.

Jato transversal de gotas: simulações por ALE/FEM e efeitos interfaciais.

Um código computacional para escoamentos bifásicos incorporando metodologia híbrida entre oMétodo dos Elementos Finitos e a descrição Lagrangeana-Euleriana Arbitrária do movimento é usado para simular a dinâmica de um jato transversal de gotas na zona primária de quebra. Os corpos dispersos são descritos por meio de um método do tipo front-tracking que produz interfaces de espessura zero através de malhas formadas pela união de elementos adjacentes em ambas as fases e de técnicas de refinamento adaptativo. Condições de contorno periódicas são implementadas de modo variacionalmente consistente para todos os campos envolvidos nas simulações apresentadas e uma versão modificada do campo de pressão é adicionada à formulação do tipo um-fluido usada na equação da quantidade de movimento linear. Simulações numéricas diretas em três dimensões são executadas para diferentes configurações de líquidos imiscí veis compatíveis com resultados experimentais encontrados na literatura. Análises da hidrodinâmica do jato transversal de gotas nessas configurações considerando trajetórias, variação de formato de gota, espectro de pequenas perturbações, além de aspectos complementares relativos à qualidade de malha são apresentados e discutidos.

Analysis of SEB and SEGR in super-junction MOSFETs

The electric field distribution in the super junction power MOSFET is analyzed using analytical modeling and numerical simulations in this paper. The single-event burn-out (SEB) and single-event gate rupture (SEGR) phenomena in this device are studied in detail. It is demonstrated that the super junction device is much less sensitive to SEB and SEGR compared to the standard power MOSFET. The physical mechanism is explained.

Analytical model for the 3D-RESURF effect

This paper presents an analytical model for the determination of the basic breakdown properties of three-dimensional (3D)-RESURF/CoolMOS/super junction type structures. To account for the two-dimensional (2D) effect of the 3D-RESURF action, 2D models of the electric field distribution are developed. Based on these, expressions are derived for the breakdown voltage as a function of doping concentration and physical dimensions. In addition to cases where the drift regions are fully depleted, the model developed is also applicable to situations involving drift regions which are almost depleted. Accuracy of the analytical approach is verified by comparison with numerical results obtained from the MEDICI device simulator.

Simulation of solitary wave impact on coastal structures using weakly compressible and incompressible SPH methods

In this paper, we engage a Lagrangian, particle-based CFD method, named Smoothed Particle Hydrodynamic (SPH) to study the solitary wave motion and its impact on coastal structures. Two-dimensional weakly compressible and incompressible SPH models were applied to simulate wave impacting on seawall and schematic coastal house. The results confirmed the accuracy of both models for predicting the wave surface profiles. The incompressible SPH model performed better in predicting the pressure field and impact loadings on coastal structures than the weakly compressible SPH model. The results are in qualitatively agreement with experimental results. Copyright © 2011 by the International Society of Offshore and Polar Engineers (ISOPE).

Low on-resistance SOI dual-trench-gate MOSFET

A low specific on-resistance (R-{{\rm on}, {\rm sp}}) integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual conduction channels, and the extended gate widens the vertical conduction area; both of which sharply reduce R-{{\rm on}, {\rm sp}}. Second, the oxide trench folds the drift region in the vertical direction, resulting in a reduced device pitch and R-{{\rm on}, {\rm sp}}. Third, the oxide trench causes multidirectional depletion. This not only enhances the reduced surface field effect and thus reshapes the electric field distribution but also increases the drift doping concentration, leading to a reduced R-{{\rm on}, {\rm sp}} and an improved breakdown voltage (BV). Compared with a conventional SOI lateral Double-diffused metal oxide semiconductor (LDMOS), the DTDG MOSFET increases BV from 39 to 92 V at the same cell pitch or decreases R-{{\rm on}, { \rm sp}} by 77% at the same BV by simulation. Finally, the TG extended synchronously acts as an isolation trench between the high/low-voltage regions in a high-voltage integrated circuit, saving the chip area and simplifying the isolation process. © 2006 IEEE.

Energy stable and momentum conserving hybrid finite element method for the incompressible Navier-Stokes equations

A hybrid method for the incompressible Navier-Stokes equations is presented. The method inherits the attractive stabilizing mechanism of upwinded discontinuous Galerkin methods when momentum advection becomes significant, equal-order interpolations can be used for the velocity and pressure fields, and mass can be conserved locally. Using continuous Lagrange multiplier spaces to enforce flux continuity across cell facets, the number of global degrees of freedom is the same as for a continuous Galerkin method on the same mesh. Different from our earlier investigations on the approach for the Navier-Stokes equations, the pressure field in this work is discontinuous across cell boundaries. It is shown that this leads to very good local mass conservation and, for an appropriate choice of finite element spaces, momentum conservation. Also, a new form of the momentum transport terms for the method is constructed such that global energy stability is guaranteed, even in the absence of a pointwise solenoidal velocity field. Mass conservation, momentum conservation, and global energy stability are proved for the time-continuous case and for a fully discrete scheme. The presented analysis results are supported by a range of numerical simulations. © 2012 Society for Industrial and Applied Mathematics.

Study of second generation, high-temperature superconducting coils: Determination of critical current

This paper presents the modeling of second generation (2 G) high-temperature superconducting (HTS) pancake coils using finite element method. The axial symmetric model can be used to calculate current and magnetic field distribution inside the coil. The anisotropic characteristics of 2 G tapes are included in the model by direct interpolation. The model is validated by comparing to experimental results. We use the model to study critical currents of 2 G coils and find that 100μV/m is too high a criterion to determine long-term operating current of the coils, because the innermost turns of a coil will, due to the effect of local magnetic field, reach their critical current much earlier than outer turns. Our modeling shows that an average voltage criterion of 20μV/m over the coil corresponds to the point at which the innermost turns' electric field exceeds 100μV/m. So 20μV/m is suggested to be the critical current criterion of the HTS coil. The influence of background field on the coil critical current is also studied in the paper. © 2012 American Institute of Physics.

200-V lateral superjunction LIGBT on partial SOI

This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R dson of 765 mΩ ̇ mm 2. It exhibits half the value of specific on-state resistance R dson and three times higher saturation current (I dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R dson at 175°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process. © 2012 IEEE.

Experimental and numerical study of a YBCO pancake coil with a magnetic substrate

A finite element model for a YBCO pancake coil with a magnetic substrate is developed in this paper. An axial symmetrical H formulation and the E-J power law are used to construct the model, with the magnetic substrate considered by introducing an extra time-dependent term in the formula. A pancake coil is made and tested. The measurement of critical current and transport loss is compared to the model result, showing good consistency. The influence of magnetic substrate in the condition of AC and DC current is studied. The AC loss decreases without a magnetic substrate. It is observed that when the applied DC current approaches the critical current the coil turn loss profile changes completely in the presence of magnetic substrate due to the change of magnetic field distribution. © 2012 IOP Publishing Ltd.

The lateral superjunction PSOI LIGBT and LDMOSFET

This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process. The superjunction drift region helps in achieving uniform electric field distribution in both structures but also contributes to the on-state current in the LIGBT. The superjunction LIGBT successfully achieves breakdown voltage (BV) of 210V with Rdson of 765mΩ.mm2. It exhibits reduced specific on-state resistance Rdson and higher saturation current (Idsat) for the same BV compared to a compatible lateral superjunction LDMOS in the same technology. © 2012 IEEE.

Study by Hall probe mapping of the trapped flux modification produced by local heating in YBCO HTS bulks for different surface/volume ratios

The aim of this report is to compare the trapped field distribution under a local heating created at the sample edge for different sample morphologies. Hall probe mappings of the magnetic induction trapped in YBCO bulk samples maintained out of thermal equilibrium were performed on YBCO bulk single domains, YBCO single domains with regularly spaced hole arrays, and YBCO superconducting foams. The capability of heat draining was quantified by two criteria: the average induction decay and the size of the thermally affected zone caused by a local heating of the sample. Among the three investigated sample shapes, the drilled single domain displays a trapped induction which is weakly affected by the local heating while displaying a high trapped field. Finally, a simple numerical modelling of the heat flux spreading into a drilled sample is used to suggest some design rules about the hole configuration and their size. © 2005 IOP Publishing Ltd.

The acoustic analogy in an annular duct with swirling mean flow

This paper is concerned with modelling the effects of swirling flow on turbomachinery noise. We develop an acoustic analogy to predict sound generation in a swirling and sheared base flow in an annular duct, including the presence of moving solid surfaces to account for blade rows. In so doing we have extended a number of classical earlier results, including Ffowcs Williams & Hawkings' equation in a medium at rest with moving surfaces, and Lilley's equation for a sheared but non-swirling jet. By rearranging the Navier-Stokes equations we find a single equation, in the form of a sixth-order differential operator acting on the fluctuating pressure field on the left-hand side and a series of volume and surface source terms on the right-hand side; the form of these source terms depends strongly on the presence of swirl and radial shear. The integral form of this equation is then derived, using the Green's function tailored to the base flow in the (rigid) duct. As is often the case in duct acoustics, it is then convenient to move into temporal, axial and azimuthal Fourier space, where the Green's function is computed numerically. This formulation can then be applied to a number of turbomachinery noise sources. For definiteness here we consider the noise produced downstream when a steady distortion flow is incident on the fan from upstream, and compare our results with those obtained using a simplistic but commonly used Doppler correction method. We show that in all but the simplest case the full inclusion of swirl within an acoustic analogy, as described in this paper, is required. © 2013 Cambridge University Press.

200V superjunction lateral IGBT fabricated on partial SOI

A 200V lateral insulated gate bipolar transistor (LIGBT) was successfully developed using lateral superjunction (SJ) in 0.18μm partial silicon on insulator (SOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations. For an n-type lateral SJ LIGBT, the p layer in the SJ drift region helps in achieving uniform electric field distribution. Furthermore, the p-pillar contributes to the on-state current. Furthermore, the p-pillar contributes to sweep out holes during the turn-off process, thus leading to faster removal of plasma. To realize this device, one additional mask layer is required in the X-FAB 0.18μm partial SOI HV process. © 2013 IEEE.