A comparison of monofilament gillnet and small hook longline selectivity in a multispecies artisanal fishery in the Algarve, southern Portugal

As part of the ongoing studies concerned with the small-scale fisheries of the South of Portugal, experimental fishing was carried out with monofilament gillnets and small hook longlines within the same area. Sixty-two species were caught, of which 20 were common to both gears. Pronounced differences in terms of the relative importance of different species in the catches were observed. Size selection patterns also differed, with highly overlapped hook catch distributions and few species showing evidence for size selectivity. In contrast, strong selectivity was characteristic of species which tend to be wedged in gillnets. Whereas smaller stretched mesh sizes (particularly 40 and 50 mm) caught significant numbers of illegal sized fish, this was mininmal in the longlines. Some implications for management are discussed.

A representação da estética simbolista e sua receptividade no contexto cultural e literário do Brasil e de Portugal

O Simbolismo surge na França em meio a um turbilhão de transformações advindas da modernidade. Estas transformações levaram os indivíduos a repensarem os pressupostos racionalistas e cientificistas. Desta maneira, o espírito da decadência, que está na base do movimento simbolista, se instaura em 1857, quando Charles Baudelaire lança sua obra As flores do mal, desenvolvendo uma poesia voltada para a inovação do estilo e para uma temática nova. Para isso, aborda assuntos tabus naquela sociedade, fala da monotonia dos tempos modernos, da solidão existencial e inclui coisas consideradas sórdidas e repugnantes em seus versos. O movimento, então, se desenvolve pelo mundo seguindo os pressupostos decadentistas inaugurados por Baudelaire e chega a Portugal e ao Brasil. Nestes países, veremos que a estética do Simbolismo não terá o mesmo prestígio que na França, porque se desenvolverá em oposição ao espírito nacionalista, patriótico e positivista, praticado pelo Realismo na prosa e o Parnasianismo na poesia. Assim, o movimento simbolista não terá um lugar de destaque dentro do campo literário nesses dois países, permanecendo à margem dos cânones hegemônicos. Observaremos como o gênero gótico de Álvares de Azevedo e A Geração do Trovador, anteriores ao Simbolismo no Brasil e Portugal, respectivamente, se constituem como precursores desse movimento estético. Analisamos ainda o lugar, a poética e a crítica de Nestor Vítor no campo literário brasileiro e o lugar e a poética de Camilo Pessanha no campo literário português, buscando, com base nas conceituações teóricas de Pierre Bourdieu e Dominique Maingueneau sobre a gênese do campo literário e o discurso literário, os diferentes posicionamentos dos agentes, suas cenas de enunciação e seus espaços, responder ao porquê do desprestígio do movimento simbolista no Brasil e em Portugal

A expressão da futuridade verbal no espaço da lusofonia: Brasil, Portugal e Moçambique

O futuro verbal caracteriza-se por uma conformação cognitiva e semântica bastante distinta da verificada nos demais tempos verbais, distintos do tempo cronológico. Tal fato apresenta-se abrangente nas línguas e traz consequências morfossintáticas apreciáveis na constituição de tal tempo verbal em português, tanto em perspectiva sincrônica quanto em diacrônica. Hoje, em língua portuguesa, presenciamos uma nova mudança na manifestação desse futuro verbal, com a crescente difusão da forma perifrástica composta por ir e infinitivo, como gramaticalização da expressão de futuro. Tal processo de mudança ainda se encontra em curso na língua, fato atestável em vários usos. Objetivamos aqui a descrição dos tempos verbais futuros da língua portuguesa, que não se confundem com a simples expressão de futuridade, bem como o estabelecimento de um estudo comparativo entre três variedades do português, a brasileira, a europeia e a moçambicana, quanto a usos e valores do futuro do presente, tempo verbal prototípico dos futuros

Studies on the seasonal cycle of sea surface temperatures, salinities and phytoplankton in Puttalam Lagoon, Dutch Bay and Portugal Bay along the west coast of Ceylon.

The monthly average temperatures at Puttalam Lagoon, Dutch Bay, Portugal Bay towards Kovilmunai and Portugal Bay towards Pallugaturai showed a distinct annual cycle. The peak was in April and values gradually fell till September. There was a further gradual fall in temperature from October to January. The highest temperatures in all four stations were in April. The highest salinities in all the stations were from May to October i.e., during the south-west monsoon. The salinities at Dutch Bay and Portugal Bay were high in March and April corresponding to the highest temperatures reached during these months. Two maxima have been observed in phytoplankton production. A primary maximum in May-June and a secondary maximum in October. The primary and secondary maxima are due to the influx of nutrient laden waters from the rivers Kal Aru and Pomparippu Aru. The phytoplankton producing blooms were Rhizosolenia alata. Rhizosolenia imbricata, Chaetoceros lascinosus, Chaetoceros pervianus, Ch,aetoceros diversus, Coscinodiscus gigas, Thallasionema nitzschioides, Thalassiosira subtilis, Thallassiothrix frauenfeldii, Asterionella japonica, Sceletonema costatum, Bacteriastrum varians and Biddulphia sinensis. Sudden outbursts of a single species were common. These diatoms were species of Chaetoceros and Rhizosolenia, and Thallassiothrix frauenfeldii. Wide fluctuations have been observed in the distribution of phytoplankton but no definite conclusions can be drawn as the period of observation was only one year.

Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities

Strongly enhanced light emission at wavelengths between 1.3 and 1.6 μm is reported at room temperature in silicon photonic crystal (PhC) nanocavities with optimized out-coupling efficiency. Sharp peaks corresponding to the resonant modes of PhC nanocavities dominate the broad sub-bandgap emission from optically active defects in the crystalline Si membrane. We measure a 300-fold enhancement of the emission from the PhC nanocavity due to a combination of far-field enhancement and the Purcell effect. The cavity enhanced emission has a very weak temperature dependence, namely less than a factor of 2 reduction between 10 K and room temperature, which makes this approach suitable for the realization of efficient light sources as well as providing a quick and easy tool for the broadband optical characterization of silicon-on-insulator nanostructures. © 2011 American Institute of Physics.

Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band.

We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.

Locally oxidized silicon surface-plasmon Schottky detector for telecom regime.

We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip.

Integration of silicon plasmonic schottky photodetector for on chip signal tapping at telecom wavelengths

We experimentally demonstrate the use of an on-chip integrated Schottky plasmonic detector for testing, monitoring and tapping signals in plasmonic and photonic devices. Theoretical model and measurement of external and integrated devices will be presented. © OSA 2013.

Integration of silicon plasmonic schottky photodetector for on chip signal tapping at telecom wavelengths

We experimentally demonstrate the use of an on-chip integrated Schottky plasmonic detector for testing, monitoring and tapping signals in plasmonic and photonic devices. Theoretical model and measurement of external and integrated devices will be presented. © OSA 2013.

Integration of silicon plasmonic schottky photodetector for on chip signal tapping at telecom wavelengths

We experimentally demonstrate the use of an on-chip integrated Schottky plasmonic detector for testing, monitoring and tapping signals in plasmonic and photonic devices. Theoretical model and measurement of external and integrated devices will be presented. © OSA 2013.

Silicon-metal waveguide as a high efficiency Schottky detector for telecom wavelengths

We demonstrate an integrated on-chip compact and high efficiency Schottky detector for telecom wavelengths based on silicon metal waveguide. Detection is based on the internal photoemission process. Theory and experimental results are discussed. © 2012 OSA.

On chip plasmonic enhanced silicon Schottky detector for telecom wavelengths

We demonstrate an integrated on-chip plasmonic enhanced Schottky detector for telecom wavelengths based on the internal photoemission process. This CMOS compatible device may serve as a promising alternative to the Si-Ge detectors. © 2012 OSA.