986 resultados para National Science Foundation (U.S.). Office of Polar Programs


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Prepared by Andrus Gerontology Center, University of Southern California under Grant No. APR 75-21178.

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Vols. for issued as U.S. National Science Foundation. NSF.

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"NSF/RA 770123."

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Cover title.

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"Ninth annual report of the National Science Board."

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At head of title: SFCSI

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The valence band offsets of the wurtzite polar C-plane and nonpolar A-plane InN/ZnO heterojunctions are directly determined by x-ray photoelectron spectroscopy to be 1.76 +/- 0.2 eV and 2.20 +/- 0.2 eV. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 0.84 +/- 0.2 eV and 0.40 +/- 0.2 eV. The difference of valence band offsets of them mainly attributes to the spontaneous polarization effect. Our results show important face dependence for InN/ZnO heterojunctions, and the valence band offset of A-plane heterojunction is more close to the "intrinsic" valence band offset.

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"NSF 80-316."

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Includes bibliographical references.