Thickness-dependent fcc-hcp phase transformation in polycrystalline titanium thin films

Polycrystalline Ti thin films are shown to gradually transform from face-centered cubic (fcc) to hexagonal close-packed structure (hcp) with increasing film thickness. Diffraction stress analysis revealed that the fcc phase is formed in a highly compressive hcp matrix (>= 2 GPa), the magnitude of which decreases with increasing film thickness. A correlation between stress and crystallographic texture vis-a-vis the fcc-hcp phase transformation has been established. The total free energy change of the system upon phase transformation calculated using the experimental results shows that the fcc-hcp transformation is theoretically possible in the investigated film thickness regime (144-720 nm) and the hcp structure is stable for films thicker than 720 nm, whereas the fcc structure can be stabilized in Ti films much thinner than 144 nm. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Effect of TiO2 electrode thickness on photovoltaic properties of dye sensitized solar cell based on randomly oriented Titania nanotubes

Anatase titania nanotubes (TNTs) have been synthesized from P25 TiO2 powder by alkali hydrothermal method followed by post annealing. The microstructure analysis by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) revealed the formation of anatase nanotubes with a diameter of 9-10 nm. These NTs are used to make photo anode in dye-sensitized solar cells (DSSCs). Layer by layer deposition with curing of each layer at 350 C is employed to realize films of desired thickness. The performance of these cells is studied using photovoltaic measurements. Electrochemical impedance spectroscopy (EIS) is used to quantitatively analyze the effect of thickness on the performance of these cells. These studies revealed that the thickness of TiO2 has a pronounced impact on the cell performance and the optimum thickness lies in the range of 10-14 mu m. In comparison to dye solar cells made of P25, TNTs based cells exhibit an improved open circuit voltage and fill factor (FF) due to an increased electron lifetime, as revealed by EIS analysis. (C) 2011 Elsevier B.V. All rights reserved.

Study of thickness dependence on electrical properties of (Pb,La)TiO3 thin films for memory applications

Lead-lanthanum-titanate (Pb0.72La0.28)TiO3 (PLT) is one of the interesting materials for DRAM applications due to its room temperature paraelectric nature and its higher dielectric permittivity. PLT thin films of different thickness ranging from 0.54- 0.9 mum were deposited on Pt coated Si substrates by excimer laser ablation technique. We have measured the voltage (field) dependence, the thickness dependence, temperature dependence of dc leakage currents and analysis is done on these PLT thin films. Current- voltage characteristics were measured at different temperatures for different thick films and the thickness dependence of leakage current has been explained by considering space charge limited conduction mechanism. The charge transport phenomena were studied in detail for films of different thicknesses for dynamic random access memory applications.

The thickness dependence of the electrical and dielectric properties in the laser ablated SrBi2Nb2O9 thin films

he thickness dependence of the electrical properties in the thin films of uniaxial SrBi2Nb2O9 has been studied in this report. According to many published literatures, it could be an effective way to identify the basic conduction process. The laser ablation was chosen as the deposition technique to ensure an oriented growth and a proper stoichiometric deposition. The structural, dielectric and conduction properties were studied as a function of thickness. The films showed good ferroelectric properties, an ordered growth, and a space-charge controlled conduction process, which was double checked by reversing the polarity of the applied voltage, and also by examining the high field current response of the sample varying in thickness.

High contrast imaging and thickness determination of graphene with in-column secondary electron microscopy

We report a new method for quantitative estimation of graphene layer thicknesses using high contrast imaging of graphene films on insulating substrates with a scanning electron microscope. By detecting the attenuation of secondary electrons emitted from the substrate with an in-column low-energy electron detector, we have achieved very high thickness-dependent contrast that allows quantitative estimation of thickness up to several graphene layers. The nanometer scale spatial resolution of the electron micrographs also allows a simple structural characterization scheme for graphene, which has been applied to identify faults, wrinkles, voids, and patches of multilayer growth in large-area chemical vapor deposited graphene. We have discussed the factors, such as differential surface charging and electron beam induced current, that affect the contrast of graphene images in detail. (C) 2011 American Institute of Physics. doi:10.1063/1.3608062]

Effect of rolling temperature and reduction in thickness on microstructure and mechanical properties of ZM21 magnesium alloy and its subsequent annealing treatment

In this present paper, the effects of non-isothermal rolling temperature and reduction in thickness followed by annealing on microstructure and mechanical properties of ZM21 magnesium alloy were investigated. The alloy rolled at four different temperatures 250 degrees C, 300 degrees C, 350 degrees C and 400 degrees C with reductions of 25%, 50% and 75%. Non-isothermal rolling resulted in grain refinement, introduction of shear bands and twins in the matrix alloy. Partial to full recrystallization was observed when the rolling temperature was above recrystallization temperature. Rolling and subsequent annealing resulted in strain-free equiaxed grains and complete disappearance of shear bands and twins. Maximum ultimate strength (345 MPa) with good ductility (14%) observed in the sample rolled at 250 degrees C with 75% reduction in thickness followed by short annealing. Recrystallization during warm/hot rolling was sluggish, but post-roll treatment gives distinct views about dynamic and static recrystallization. (C) 2011 Elsevier B.V. All rights reserved.

The influence of Zr layer thickness on contact deformation and fracture in a ZrN-Zr multilayer coating

In order to understand the influence of ductile metal interlayer on the overall deformation behavior of metal/nitride multilayer, different configurations of metal and nitride layers were deposited and tested under indentation loading. To provide insight into the trends in deformation with multilayer spacings, an FEM model with elastic-perfect plastic metal layers alternate with an elastic nitride on top of an elastic-plastic substrate. The strong strain mismatch between the metal and nitride layers significantly alters the stress field under contact loading leading to micro-cracking in the nitride, large tensile stresses immediately below the contact, and a transition from columnar sliding in thin metal films to a more uniform bending and microcracking in thicker coatings.

A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry

Surface-potential-based compact charge models for symmetric double-gate metal-oxide-semiconductor field-effect transistors (SDG-MOSFETs) are based on the fundamental assumption of having equal oxide thicknesses for both gates. However, for practical devices, there will always be some amount of asymmetry between the gate oxide thicknesses due to process variations and uncertainties, which can affect device performance significantly. In this paper, we propose a simple surface-potential-based charge model, which is applicable for tied double-gate MOSFETs having same gate work function but could have any difference in gate oxide thickness. The proposed model utilizes the unique so-far-unexplored quasi-linear relationship between the surface potentials along the channel. In this model, the terminal charges could be computed by basic arithmetic operations from the surface potentials and applied biases, and thus, it could be implemented in any circuit simulator very easily and extendable to short-channel devices. We also propose a simple physics-based perturbation technique by which the surface potentials of an asymmetric device could be obtained just by solving the input voltage equation of SDG devices for small asymmetry cases. The proposed model, which shows excellent agreement with numerical and TCAD simulations, is implemented in a professional circuit simulator through the Verilog-A interface and demonstrated for a 101-stage ring oscillator simulation. It is also shown that the proposed model preserves the source/drain symmetry, which is essential for RF circuit design.

Inclusion of body doping in compact models for fully-depleted common double gate MOSFET adapted to gate-oxide thickness asymmetry

Since it is difficult to find the analytical solution of the governing Poisson equation for double gate MOSFETs with the body doping term included, the majority of the compact models are developed for undoped-body devices for which the analytical solution is available. Proposed is a simple technique to included a body doping term in such surface potential based common double gate MOSFET models also by taking into account any differences between the gate oxide thickness. The proposed technique is validated against TCAD simulation and found to be accurate as long as the channel is fully depleted.

Effect of Thickness on The Optical Properties Change in Bi/As2S3 Bilayer Thin Films

Bilayer thin films of Bi/As2S3 were prepared from Bi and As2S3 by thermal evaporation technique under high vacuum. We have prepared three bilayer films of 905nm, 910nm and 915nm thickness with with As2S3 as bottom layer (900nm) and Bi as top layer (5,10,15 nm). We have compared the optical changes due to the thickness variation of Bi layer on As2S3 film. The changes were characterized by FTIR and XPS techniques.

Effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes

In this paper we present the effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes (OLEDs). A number of OLED devices have been fabricated with combinations of hole injecting and hole blocking layers of varying thicknesses. Even though hole blocking and hole injection layers have opposite functions, yet there is a particular combination of their thicknesses when they function in conjunction and luminous efficiency and power efficiency are maximized. The optimum thickness of CuPc (Copper(II) phthalocyanine) layer, used as hole injection layer and BCP (2,9 dimethyl-4,7-diphenyl-1,10-phenanthroline) used as hole blocking layer were found to be 18 nm and 10 nm respectively. It is with this delicate adjustment of thicknesses, charge balancing is achieved and luminous efficiency and power efficiency were optimized. The maximum luminous efficiency of 3.82 cd/A at a current density of 24.45 mA/cm(2) and maximum power efficiency of 2.61 lm/W at a current density of 5.3 mA/cm(2) were achieved. We obtained luminance of 5993 cd/m(2) when current density was 140 mA/cm(2). The EL spectra was obtained for the LEDs and found that it has a peaking at 524 nm of wavelength. (C) 2012 Elsevier B.V. All rights reserved.

Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE

We present an extensive study on the structural, electrical and optical properties of InN thin films grown on c-Al2O3, GaN(130 nm)/Al2O3, GaN(200 nm)/Al2O3 and GaN(4 mu m)/Al2O3 by using plasma-assisted molecular beam epitaxy. The high resolution X-ray diffraction study reveals better crystalline quality for the film grown on GaN(4 mu m)/Al2O3 as compared to others. The electronic and optical properties seem to be greatly influenced by the structural quality of the films, as can be evidenced from Hall measurement and optical absorption spectroscopy. Kane's k.p model was used to describe the dependence of optical absorption edge of InN films on carrier concentration by considering the non-parabolic dispersion relation for carrier in the conduction band. Room temperature Raman spectra for the InN films grown on GaN show the signature of residual tensile stress in contrast to the compressive stress observed for the films grown directly on c-Al2O3. (C) 2012 Elsevier B.V. All rights reserved.

Predicting the lithospheric stress field and plate motions by joint modeling of lithosphere and mantle dynamics

The way in which basal tractions, associated with mantle convection, couples with the lithosphere is a fundamental problem in geodynamics. A successful lithosphere-mantle coupling model for the Earth will satisfy observations of plate motions, intraplate stresses, and the plate boundary zone deformation. We solve the depth integrated three-dimensional force balance equations in a global finite element model that takes into account effects of both topography and shallow lithosphere structure as well as tractions originating from deeper mantle convection. The contribution from topography and lithosphere structure is estimated by calculating gravitational potential energy differences. The basal tractions are derived from a fully dynamic flow model with both radial and lateral viscosity variations. We simultaneously fit stresses and plate motions in order to delineate a best-fit lithosphere-mantle coupling model. We use both the World Stress Map and the Global Strain Rate Model to constrain the models. We find that a strongly coupled model with a stiff lithosphere and 3-4 orders of lateral viscosity variations in the lithosphere are best able to match the observational constraints. Our predicted deviatoric stresses, which are dominated by contribution from mantle tractions, range between 20-70 MPa. The best-fitting coupled models predict strain rates that are consistent with observations. That is, the intraplate areas are nearly rigid whereas plate boundaries and some other continental deformation zones display high strain rates. Comparison of mantle tractions and surface velocities indicate that in most areas tractions are driving, although in a few regions, including western North America, tractions are resistive. Citation: Ghosh, A., W. E. Holt, and L. M. Wen (2013), Predicting the lithospheric stress field and plate motions by joint modeling of lithosphere and mantle dynamics.

Nonquasi-static charge model for common double-gate MOSFETs adapted to gate oxide thickness asymmetry

With the unique quasi-linear relationship between the surface potentials along the channel, recently we have proposed a quasi-static terminal charge model for common double-gate MOSFETs, which might have asymmetric gate oxide thickness. In this brief, we extend this concept to develop the nonquasi-static (NQS) charge model for the same by solving the governing continuity equations. The proposed NQS model shows good agreement against TCAD simulations and appears to be useful for efficient circuit simulation.

Estimation of ice thickness using surface velocities and slope: case study at Gangotri Glacier, India

We estimate the distribution of ice thickness for a Himalayan glacier using surface velocities, slope and the ice flow law. Surface velocities over Gangotri Glacier were estimated using sub-pixel correlation of Landsat TM and ETM+ imagery. Velocities range from similar to 14-85 m a(-1) in the accumulation region to similar to 20-30 ma(-1) near the snout. Depth profiles were calculated using the equation of laminar flow. Thickness varies from similar to 540 m in the upper reaches to similar to 50-60 m near the snout. The volume of the glacier is estimated to be 23.2 +/- 4.2 km(3).