液相介质对水平气液间歇流动压降的影响

研究了水平管内不同液相介质(水、油和不同浓度的CMC溶液)对气液两相间歇流动压降的影响.实验管道为内径50mm的透明有机玻璃管,从入口到分离器长约30 m,实验段由2个长3 m的水平管组成.共记录了320组不同表观流速下的压降信号:油相0.17～1.85 m/s,水相0.17～2.48 m/s,CMC溶液0.17～1.42 m/s,气相0.06～3.40 m/s.结果表明,液相为牛顿流体(油或水)的气液流动,随着表观气相流速的增大,压降呈增加趋势;非牛顿幂率流体(不同浓度的CMC溶液)的管道流动,当流动指数低于一定值时,压降随气相流量的增加呈降低趋势,并且低于单液相流动的压降.Lockhart-Martinelli模型过高地预测了气-非牛顿幂率流体两相的压降.

Spatial determination of gold catalyst residue used in the production of ZnO nanowires by SIMS depth profiling analysis

In this paper we demonstrate how secondary ion mass spectrometry (SIMS) can be applied to ZnO nanowire structures for gold catalyst residue determination. Gold plays a significant role in determining the structural properties of such nanowires, with the location of the gold after growth being a strong indicator of the growth mechanism. For the material investigated here, we find that the gold remains at the substrate-nanowire interface. This was not anticipated as the usual growth mechanism associated with catalyst growth is of a vapour-liquid-solid (VLS) type. The results presented here favour a vapour-solid (VS) growth mechanism instead. Copyright © 2007 John Wiley & Sons, Ltd.

Studies on two-phase co-current air/non-Newtonian shear-thinning fluid flows in inclined smooth pipes

In this work. co-current flow characteristics of air/non-Newtonian liquid systems in inclined smooth pipes are studied experimentally and theoretically using transparent tubes of 20, 40 and 60 turn in diameter. Each tube includes two 10 m lone pipe branches connected by a U-bend that is capable of being inclined to any angle, from a completely horizontal to a fully vertical position. The flow rate of each phase is varied over a wide range. The studied flow phenomena are bubbly, plug flow, slug flow, churn flow and annular flow. These are observed and recorded by a high flow. stratified flow. -speed camera over a wide range of operating conditions. The effects of the liquid phase properties, the inclination angle and the pipe diameter on two-phase flow characteristics are systematically studied. The Heywood-Charles model for horizontal flow was modified to accommodate stratified flow in inclined pipes, taking into account the average void fraction and pressure drop of the mixture flow of a gas/non-Newtonian liquid. The pressure drop gradient model of Taitel and Barnea for a gas/Newtonian liquid slug flow was extended to include liquids possessing shear-thinning flow behaviour in inclined pipes. The comparison of the predicted values with the experimental data shows that the models presented here provide a reasonable estimate of the average void fraction and the corresponding pressure drop for the mixture flow of a gas/ non-Newtonian liquid. (C) 2007 Elsevier Ltd. All rights reserved.

液固旋流器分离效率的研究

对分离效率与液相流速、油水比例和旋流器级数之间的关系进行了系统的实验研究.通过受力分析从理论上对细颗粒易受参数影响的原因进行了阐述,并根据量纲分析和实验数据得到了分离效率与Re数和St数之间的函数关系.在此基础上,对液固旋流器的现场应用提出了有价值的建议.

STM study on the self-assembly of oligothiophene-based organic semiconductors

The self-assembly properties of a series of functionalized regioregular oligo(3-alkylthiophenes) were investigated by using scanning tunneling microscopy (STM) at the liquid-solid interface under ambient conditions. The characteristics of the 2-D crystals formed on the (0001) plane of highly ordered pyrolitic graphite (HOPG) strongly depend on the length of the p-conjugated oligomer backbone, on the functional groups attached to it, and on the alkyl substitution pattern on the individual thiophene units. Theoretical calculations were performed to analyze the geometry and electronic density of the molecular orbitals as well as to analyze the intermolecular interactions, in order to obtain models of the 2-D molecular ordering on the substrate.

Dissipative particle dynamics simulation of wettability alternation phenomena in the chemical flooding process

Wettability alternation phenomena is considered one of the most important enhanced oil recovery (EOR) mechanisms in the chemical flooding process and induced by the adsorption of surfactant on the rock surface. These phenomena are studied by a mesoscopic method named as dissipative particle dynamics (DPD). Both the alteration phenomena of water-wet to oil-wet and that of oil-wet to water-wet are simulated based on reasonable definition of interaction parameters between beads. The wetting hysteresis phenomenon and the process of oil-drops detachment from rock surfaces with different wettability are simulated by adding long-range external forces on the fluid particles. The simulation results show that, the oil drop is liable to spread on the oil-wetting surface and move in the form of liquid film flow, whereas it is likely to move as a whole on the water-wetting surface. There are the same phenomena occuring in wettability-alternated cases. The results also show that DPD method provides a feasible approach to the problems of seepage flow with physicochemical phenomena and can be used to study the mechanism of EOR of chemical flooding.

ZnSe nanowires grown on the crystal surface by femtosecond laser ablation in air

Uniform ZnSe nanowires are observed on the ablation crater on ZnSe crystal surface irradiated by femtosecond lasers in air, while other parts of the sample surface are not polluted. The nanowire growth rate is about 5 mu m/s, it is higher than that fabricated by chemical vapor deposition method by a factor of 10(4). The nanowire length and diameter can be controlled by varying laser pulse energy and pulse number. The formation mechanism is studied and found to be self-catalyzed vapor-liquid-solid process. (c) 2006 American Institute of Physics.

A multi-scale approach to shaping carbon nanotube structures for hollow microneedles

The concept of a carbon nanotube microneedle array is explored in this thesis from multiple perspectives including microneedle fabrication, physical aspects of transdermal delivery, and in vivo transdermal drug delivery experiments. Starting with standard techniques in carbon nanotube (CNT) fabrication, including catalyst patterning and chemical vapor deposition, vertically-aligned carbon nanotubes are utilized as a scaffold to define the shape of the hollow microneedle. Passive, scalable techniques based on capillary action and unique photolithographic methods are utilized to produce a CNT-polymer composite microneedle. Specific examples of CNT-polyimide and CNT-epoxy microneedles are investigated. Further analysis of the transport properties of polymer resins reveals general requirements for applying arbitrary polymers to the fabrication process.

The bottom-up fabrication approach embodied by vertically-aligned carbon nanotubes allows for more direct construction of complex high-aspect ratio features than standard top-down fabrication approaches, making microneedles an ideal application for CNTs. However, current vertically-aligned CNT fabrication techniques only allow for the production of extruded geometries with a constant cross-sectional area, such as cylinders. To rectify this limitation, isotropic oxygen etching is introduced as a novel fabrication technique to create true 3D CNT geometry. Oxygen etching is utilized to create a conical geometry from a cylindrical CNT structure as well as create complex shape transformations in other CNT geometries.

CNT-polymer composite microneedles are anchored onto a common polymer base less than 50 µm thick, which allows for the microneedles to be incorporated into multiple drug delivery platforms, including modified hypodermic syringes and silicone skin patches. Cylindrical microneedles are fabricated with 100 µm outer diameter and height of 200-250 µm with a central cavity, or lumen, diameter of 30 µm to facilitate liquid drug flow. In vitro delivery experiments in swine skin demonstrate the ability of the microneedles to successfully penetrate the skin and deliver aqueous solutions.

An in vivo study was performed to assess the ability of the CNT-polymer microneedles to deliver drugs transdermally. CNT-polymer microneedles are attached to a hand actuated silicone skin patch that holds a liquid reservoir of drugs. Fentanyl, a potent analgesic, was administered to New Zealand White Rabbits through 3 routes of delivery: topical patch, CNT-polymer microneedles, and subcutaneous hypodermic injection. Results demonstrate that the CNT-polymer microneedles have a similar onset of action as the topical patch. CNT-polymer microneedles were also vetted as a painless delivery approach compared to hypodermic injection. Comparative analysis with contemporary microneedle designs demonstrates that the delivery achieved through CNT-polymer microneedles is akin to current hollow microneedle architectures. The inherent advantage of applying a bottom-up fabrication approach alongside similar delivery performance to contemporary microneedle designs demonstrates that the CNT-polymer composite microneedle is a viable architecture in the emerging field of painless transdermal delivery.

Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

Produção de açúcares a partir da palha de cana-de-açúcar para a produção de etanol

A crescente demanda por tecnologias que produzam biocombustíveis de maneira sustentável vem incentivando a utilização de diversos materiais lignocelulósicos para tal finalidade. O objetivo deste trabalho foi comparar o potencial de produção de açúcares (glicose e xilose) da palha e do bagaço de cana-de-açúcar. Inicialmente, as duas biomassas foram caracterizadas, mostrando percentuais muito similares de celulose e hemicelulose (42,1% e 22,6% para o bagaço e 39,2% e 22,7% para a palha, respectivamente). Isto evidencia potenciais similares de produção de açúcares. Posteriormente, foram realizados experimentos em laboratório para comparar os resultados de rendimento de xilose e produção de furfural após as reações de hidrólise ácida das duas biomassas, com o intuito de verificar se este processo, comumente utilizado para o bagaço, pode ser utilizado para a palha. As variáveis que foram avaliadas foram a concentração de ácido (0,5-3,0%m/m), o tempo reacional (15-60min) e a relação sólido-líquido (RSL - 0,1-0,2m/m). Concentrações de 42,72g/L e de 41,31g/L de xilose foram encontradas para a palha e para o bagaço, respectivamente, alcançando rendimentos de xilose superiores a 80%, em reações em laboratório. Também foram realizados ensaios de hidrólise ácida em planta piloto e de hidrólise enzimática em laboratório para avaliar os resultados de rendimento de glicose da palha. Os resultados de rendimento de xilose e produção de inibidores para estas reações foram avaliados e comparados com os dados obtidos em laboratório. Concentrações de 35,2g/Lde xilose e de 27,3g/L de glicose foram encontradas para a palha, alcançando rendimentos de xilose próximos a 100% e de glicose superiores a 64%, em reações de pré-tratamento em planta piloto e em reações de hidrólise enzimática em laboratório. Os resultados evidenciaram que as variáveis concentração de ácido e relação sólido:líquido são as mais influenciam na produção de xilose e glicose

Controlled growth of aligned ZnO nanowires

The growth of vertically aligned zinc oxide nanowires (ZnO NW) using a simple vapor deposition method system is reported. The growth properties are studied as a function of the Au catalyst layer thickness, pressure, deposition temperature, and oxygen ratio. It was found that the diameter and density of the nanowires is controlled mostly by the growth temperature and pressure. The alignment of the nanowires depends on a combination of three factors including the pressure, temperature and the oxygen ratio. Our results implicates the growth occurs by a vapor liquid solid (VLS) process [1].

Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers.

We demonstrate a method to realize vertically oriented Ge nanowires on Si(111) substrates. Ge nanowires were grown by chemical vapor deposition using Au nanoparticles to seed nanowire growth via a vapor-liquid-solid growth mechanism. Rapid oxidation of Si during Au nanoparticle application inhibits the growth of vertically oriented Ge nanowires directly on Si. The present method employs thin Ge buffer layers grown at low temperature less than 600 degrees C to circumvent the oxidation problem. By using a thin Ge buffer layer with root-mean-square roughness of approximately 2 nm, the yield of vertically oriented Ge nanowires is as high as 96.3%. This yield is comparable to that of homoepitaxial Ge nanowires. Furthermore, branched Ge nanowires could be successfully grown on these vertically oriented Ge nanowires by a secondary seeding technique. Since the buffer layers are grown under moderate conditions without any high temperature processing steps, this method has a wide process window highly suitable for Si-based microelectronics.

Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates

We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the surface of Si substrates, most nanowires are grown on the substrates straight, following (111) direction; by using two temperature growth, the nanowires were grown free from structural defects, such as twin defects and stacking faults. Systematic experiments about buffer layers indicate that V/III ratio of precursor and growth temperature can affect the morphology and quality of the buffer layers. Especially, heterostructural buffer layers grown with different V/III ratios and temperatures and in-situ post-annealing step are very helpful to grow well arranged, vertical GaAs nanowires on Si substrates. The initial nanowires having some structural defects can be defect-free by two-temperature growth mode with improved optical property, which shows us positive possibility for optoelectronic device application. ©2010 IEEE.

III-V compound semiconductor nanowires

InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter. © 2009 IEEE NANO Organizers.

Growth behavior of epitaxial semiconductor axial nanowire heterostructures

In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation by axial growth of GaSb on GaAs nanowires. © 2008 IEEE.