Low-linewidth and tunable single frequency 1x2 multimode-interferometer-Fabry-Perot laser diode

In this paper, we present a novel 1x2 multi-mode-interferometer-Fabry-Perot (MMI-FP) laser diode, which demonstrated tunable single frequency operation with more than 30dB side mode suppression ratio (SMSR) and a tuning range of 25nm in the C and L bands, as well as a 750 kHz linewidth. These lasers do not require material regrowth and high resolution gratings; resulting in a simpler process that can significantly increase the yield and reduce the cost.

梯度补偿法控温晶体的高功率绿光激光器

研究了平均功率超过30 W的稳定高效全固态绿光激光器,分析得出影响全固态腔内倍频激光器倍频效率和输出稳定性的主要因素是倍频晶体局部温升造成的相位失配和热透镜效应,采用温度梯度补偿控温法对大尺寸倍频晶体进行温度控制,降低激光器工作中倍频晶体内外温度梯度从而有效地克服因晶体局部温升造成的倍频相位匹配角失配和热透镜效应。采用三条60 W的半导体激光二极管阵列板条侧面抽运Nd:YAG激光增益介质棒,采用声光调Q,平凹直腔和腔内倍频结构配合温度梯度补偿控温法对大尺寸倍频晶体进行温度控制,得到了稳定高效的532 nm

超大功率二维半导体激光列阵并路自适应稳模技术

半导体列阵量子效率高,输出波长范围涵盖570～1600nm,工作寿命可达数百万小时,叠层列阵可提供超高功率激光输出,在工业、医学等很多领域具有非常广阔的应用前景。但列阵在自由运行时,各发光单元发出的光是不相干的,输出质量差,采用1/4Talbot外腔镜耦合技术,列阵实现了空间锁相最高阶超模,然而唯有基超模远场分布是中心单瓣结构,输出接近衍射极限。为得到最小谱宽、最小发散角、最大功率密度输出,必须将外腔镜倾斜β=λ/2d(λ为工作波长,d为列阵周期),这使得仅有基超模光能成像于发光单元内而被允许振荡。应用此

高重复率半导体激光抽运Nd：YAG放大器激光特性的实验研究

实验研究了高重复率、大功率半导体激光二极管阵列（LDA）侧面环绕抽运的Nd：YAG激光放大器的放大特性、热焦距变化和热致双折射效应引起的退偏特性。偏振光绎千赫兹高功率单通激光放大器，获得约3倍的光脉冲能量放大，脉冲宽度基本保持不变，其输出的P分量与S分量的能量比趋于常数3：1，实验测得的能量放大倍率及放大光束的椭圆偏振度与理论预期吻合很好。

位相锁定来自同一侧面抽运Nd：YAG板条的两束激光

实验研究了腔内位相锁定来至一LAD侧面抽运的Nd：YAG板条的两束激光，输出镜面出现干涉条纹，获得1.13W的相干光，其组束效率达到64.9%，相干度约60%。实验中发现只需要一根作为滤波的金属丝放在离输出镜合适的位置都就能有效稳定干涉条纹，金属丝引起的损耗低于8%。

热畸变对单板条热容激光器输出的影响

开展了激光二极管(LD)抽运的全固态热容激光器的理论与实验研究, 数值模拟了在热容工作条件下侧面抽运的Nd:YAG板条激光器的热透镜效应, 分析了热透镜效应对激光输出的影响, 并进行了相应的实验论证。实验中采用的晶体尺寸为57 mm×40 mm×4 mm, 激光二极管阵列的抽运峰值功率为12 kW, 重复频率为1 kHz, 占空比为20%, 为了获得较高的增益, 将抽运光通过光学系统进行聚焦, 抽运光在晶体侧面的光斑大小为15 mm×57 mm。实验中观察了1 s内的脉冲能量输出的波动情况, 在开始工作的

侧面抽运国产Nd∶YAG陶瓷棒的激光特性

实验研究了激光二极管阵列(LDA)侧向抽运国产Nd∶YAG陶瓷棒的准连续及被动调Q激光输出特性。该陶瓷激光器采用LDA侧面紧密环绕均匀排布的抽运结构,陶瓷棒抽运区域长度为20 mm,其总尺寸为3 mm×35 mm,掺杂原子数分数为~1%。在千赫兹准连续运转条件下,当平-平谐振腔的输出耦合镜透过率为47.3%时,获得最大平均功率23 W的1064 nm激光输出,光束发散角为4.5 mrad,斜率效率达12%。在谐振腔内插入Cr4+∶YAG晶体作为被动调Q开关,成功地实现了陶瓷激光器千赫兹重复频率调Q激光脉冲输出,当Cr4+∶YAG晶体初始透过率为60%时,输出激光脉冲宽度(半峰全宽)可窄至14.5 ns,调Q动静比约为40%。

激光二极管阵列的窄线宽、可调谐输出

外腔反馈的激光二极管阵列(LDA)可获得窄线宽、可调谐的光谱输出。外腔由快轴准直镜、准直光学系统和闪耀光栅组成。由于阵列中各发光单元的排列弯曲导致不同波长的光原路返回,引起谱线展宽,在输出光路中加入光谱滤波器,使激光二极管阵列的线宽进一步窄化。这样,激光二极管阵列的输出光谱由自由运转时的2 nm压缩到0.12 nm,在恒定温度23 ℃时,实现了激光在806～818 nm的调谐,调谐范围达12 nm。

Passive Q-switching of short-length Tm3+-doped silica fiber lasers by polycrystalline Cr2+:ZnSe microchips

We demonstrate passive Q-switching of short-length double-clad Tm3+-doped silica fiber lasers near 2 mu m pumped by a laser diode array (LDA) at 790 nm. Polycrystalline Cr2+:ZnSe microchips with thickness from 0.3 to 1 mm are adopted as the Q-switching elements. Pulse duration of 120 ns, pulse energy over 14 mu] and repetition rate of 53 kHz are obtained from a 5-cm long fiber laser. As high as 530 kHz repetition rate is achieved from a 50-cm long fiber laser at similar to 10-W pump power. The performance of the Q-switched fiber lasers as a function of fiber length is also analyzed. (c) 2008 Elsevier B.V. All rights reserved.

Characterization of diode-pumped laser operation of a novel Yb : GSO crystal

We report what is believed to be the first demonstration of the laser action of Yb3+ -doped Gd2SiO5 (Yb:GSO) crystal pumped by a 940-nm laser diode at room temperature. The threshold of laser generation is only 0.85 kW/cm(2), which is smaller than the theoretic threshold of Yb:YAG (1.54 kW/cm(2)). The laser wavelength is 1090 mn. With a 2.5% output coupler, the maximum output power is 415 mW under a pump power of 5 W. By using the SESAM, the Q-switched mode locking and CW mode-locked operations are demonstrated.

Diode-pumped room-temperature continuous wave Tm3+ doped Lu2SiO5 laser

We report on room temperature laser actions of a novel thulium-doped crystal Tm center dot Lu2SiO5 (LSO) under diode pumping. An optical optical conversion efficiency of 12% and a slope efficiency of 21% were obtained with the maximum continuous wave (CW) output power of 0.67 W. The emission wavelengths of Tm LSO laser were centered at 2058.4 nm with bandwidth of similar to 13.6 nm.

Diode laser pumped, KERR phase-shifting and switching of a diode laser signal in a small area optical fibre

In this paper authors report the first demonstration of a diode laser powered Kerr effect device, consisting of a single birefringent fiber, able to phase-shift and switch an optical signal generated by a second laser diode. They have obtained fast, stable phase-shifting of 90° in a single fiber, at a coupled pump power of only 20 mW. Using this phase shift to induce polarization switching with resultant gating, 25% modulation of the diode laser signal has been observed, with a detection limited-rise time of 10ns.

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

Impact of diode facet reflectivity on the fiber grating external cavity semiconductor laser

The scattering matrix method is used to analyze the multiple reflection effect between the laser diode facet and the fiber grating facet by considering the fiber grating external cavity laser diode (FGECL) as a four-mirror cavity laser. When neglecting other important parameters such as butt-coupling distance between the diode and the fiber facets, coupling efficiency, external cavity length, it is shown that low reflectivity is not a crucial factor for the laser characteristics such as SMSR. Experimentally high SMSR fiber grating external cavity laser is fabricated with a relatively large residual facet reflectivity (about 1%), which is coincident with our simulation results.

Zona thinning with a noncontact diode laser in ICSI embryos from women of advanced age

Purpose: the objective of this study was to determine if the zona thinning (ZT) technique improved the rates of implantation and clinical pregnancy for patients aged, greater than or equal to38 years submitted to an ICSI program.Methods: A total of 100 patients submitted to ICSI and aged, greater than or equal to38 years were divided in a prospective and randomized manner into two groups: Group I - patients submitted to ZT (n = 50); a laser diode with 1.48 mum wavelength (Fertilaser) was used for the ZT procedure with 1-2 irradiations of 10 ms applied to four different positions on the zona pellucida (ZP) of each embryo to thin 60-90% of the ZP (each point with a 15-20 mum length of ZT). Group II - patients with no ZT (n = 50). In both groups, embryo transfer was performed on the second or third day.Results: the age of Group I patients (39.8 +/- 1.3) did not differ (p = 0.67) from that of Group II patients (40 +/- 1.9). The number of oocytes retrieved at metaphase II from Group I (6.4 +/- 4.2) and Group II (6.8 +/- 5) was similar (p = 0.94). Normal fertilization rates and cleavage rates were similar (p = 0.78 and p = 0.63, respectively) for Group I (71.5 +/- 22% and 96.7 +/- 11%) and Group II (73.5 +/- 19.7% and 96 +/- 11%, respectively). The number of embryos transferred was similar (p = 0.53) for the two groups (Group I = 3.1 +/- 1.3; Group II = 2.9 +/- 1.1). The thickness of the ZP of Group I embryos (16.9 +/- 2.4 mum) did not differ (p = 0.97) from that of Group II embryos (16.9 +/- 2.3 mum). The rates of embryo implantation and clinical pregnancy per embryo transfer were similar (p = 0.67, p = 0.61) for Group I (7 and 16%, respectively) and for Group II (8.2 and 22%, respectively).Conclusions: These results suggest that ZT in the population aged, 38 years may have no impact on ICSI success rates. However, this conclusion is limited to a situation in which length of the laser ZT was less than or equal to 20 mum and the laser was applied to four different positions.