Photoelectron multipliers based on avalanche pn - i - pn structures

We present a new physical principle to design an optoelectronic device, which consists of a multilayered semiconductor structure, where the necessary conditions for generation of photoelectrons are met, such that it will enable sequential avalanche multiplication of electrons and holes inside two depletion slabs created around the p - n junctions of a reverse biased pn - i - pn structure. The mathematical model and computer simulations of this Semiconductor Photo-electron Multiplier (SPEM) for different semiconductor materials are presented. Its performance is evaluated and compared with that of conventional devices. The Geiger operational mode is briefly discussed which may be used in Silicon Photomultiplier (SiPM) as an elementary photo detector to enhance its performance.

Utilização do método numérico interpolador de Lagrange para correção de bases de dados de radiometria solar

This work explores the suitability of the Lagrange interpolating polynomial as a tool to estimate and correct solar databases. From the knowledge of the irradiance distribution over a day, a portion of it was removed for applying Lagrange interpolation polynomial. After generation of the estimates by interpolation, the assessment was made by MBE and RMSE statistical indicators. The application of Lagrange interpolating generated the following results: underestimation of 0.27% (MBE = -1.83 W/m2) and scattering of 0.51% (RMSE = 3.48 W/m2).

Lagrange-Singularitäten

In dieser Arbeit wird eine Deformationstheorie fürLagrange-Singularitäten entwickelt. Wir definieren einen Komplex von Moduln mit nicht-linearem Differential, densogenannten Lagrange-de Rham-Komplex, dessen ersteKohomologie isomorph zum Raum der infinitesimalenLagrange-Deformationen ist. Wir beschreiben die Beziehung diesesKomplexes zur Theorie der Moduln über dem Ring vonDifferentieloperatoren. Informationen zur Obstruktionstheorie vonLagrange-Deformationen werden aus derzweiten Kohomologie des Lagrange-de Rham-Komplexes gewonnen.Wir zeigen, dass unter einer geometrischen Bedingung an dieSingularität ie Kohomologie von des Lagrange-deRham-Komplexes ausendlich dimensionalen Vektorräumen besteht. Desweiteren wirdeine Methode zur effektiven Berechnung dieser Kohomologie fürquasi-homogene Lagrange-Flächensingularitäten entwickelt. UnterZuhilfenahme von Computeralgebra wird diese Methode für konkreteBeispiele angewendet.

Aloys Ander als Johann von Leyden, Anne Caroline de LaGrange als Fides, Josef Draxler als Zacharie, Gustav Hölzel als Mathisen, Heinrich Kreuzer als Jonas, Rollenbild, Gruppenbildnis, in: Giacomo Meyerbeer: Le Prophète

Signatur des Originals: S 36/G12658

The Zero-Removing Property and Lagrange-Type Interpolation Series

The classical Kramer sampling theorem, which provides a method for obtaining orthogonal sampling formulas, can be formulated in a more general nonorthogonal setting. In this setting, a challenging problem is to characterize the situations when the obtained nonorthogonal sampling formulas can be expressed as Lagrange-type interpolation series. In this article a necessary and sufficient condition is given in terms of the zero removing property. Roughly speaking, this property concerns the stability of the sampled functions on removing a finite number of their zeros.

Analytic Kramer kernels, Lagrange-type interpolation series and de Branges spaces

The classical Kramer sampling theorem provides a method for obtaining orthogonal sampling formulas. In particular, when the involved kernel is analytic in the sampling parameter it can be stated in an abstract setting of reproducing kernel Hilbert spaces of entire functions which includes as a particular case the classical Shannon sampling theory. This abstract setting allows us to obtain a sort of converse result and to characterize when the sampling formula associated with an analytic Kramer kernel can be expressed as a Lagrange-type interpolation series. On the other hand, the de Branges spaces of entire functions satisfy orthogonal sampling formulas which can be written as Lagrange-type interpolation series. In this work some links between all these ideas are established.

A second order in time modified Lagrange-Galerkin finite element method for the incompressible Navier-Stokes equations

We introduce a second order in time modified Lagrange--Galerkin (MLG) method for the time dependent incompressible Navier--Stokes equations. The main ingredient of the new method is the scheme proposed to calculate in a more efficient manner the Galerkin projection of the functions transported along the characteristic curves of the transport operator. We present error estimates for velocity and pressure in the framework of mixed finite elements when either the mini-element or the $P2/P1$ Taylor--Hood element are used.

Sampling associated with resolvent-type kernels and lagrange-type interpolation series

In this paper a new class of Kramer kernels is introduced, motivated by the resolvent of a symmetric operator with compact resolvent. The article gives a necessary and sufficient condition to ensure that the associ- ated sampling formula can be expressed as a Lagrange-type interpolation series. Finally, an illustrative example, taken from the Hamburger moment problem theory, is included.

Análisis y diseño de multiplicadores y mezcladores mediante el método de Monte Carlo en la banda de THz = Analysis and design of multipliers and mixers via Monte Carlo modelling at THz bands

La región del espectro electromagnético comprendida entre 100 GHz y 10 THz alberga una gran variedad de aplicaciones en campos tan dispares como la radioastronomía, espectroscopíamolecular, medicina, seguridad, radar, etc. Los principales inconvenientes en el desarrollo de estas aplicaciones son los altos costes de producción de los sistemas trabajando a estas frecuencias, su costoso mantenimiento, gran volumen y baja fiabilidad. Entre las diferentes tecnologías a frecuencias de THz, la tecnología de los diodos Schottky juega un importante papel debido a su madurez y a la sencillez de estos dispositivos. Además, los diodos Schottky pueden operar tanto a temperatura ambiente como a temperaturas criogénicas, con altas eficiencias cuando se usan como multiplicadores y con moderadas temperaturas de ruido en mezcladores. El principal objetivo de esta tesis doctoral es analizar los fenómenos físicos responsables de las características eléctricas y del ruido en los diodos Schottky, así como analizar y diseñar circuitos multiplicadores y mezcladores en bandas milimétricas y submilimétricas. La primera parte de la tesis presenta un análisis de los fenómenos físicos que limitan el comportamiento de los diodos Schottky de GaAs y GaN y de las características del espectro de ruido de estos dispositivos. Para llevar a cabo este análisis, un modelo del diodo basado en la técnica de Monte Carlo se ha considerado como referencia debido a la elevada precisión y fiabilidad de este modelo. Además, el modelo de Monte Carlo permite calcular directamente el espectro de ruido de los diodos sin necesidad de utilizar ningún modelo analítico o empírico. Se han analizado fenómenos físicos como saturación de la velocidad, inercia de los portadores, dependencia de la movilidad electrónica con la longitud de la epicapa, resonancias del plasma y efectos no locales y no estacionarios. También se ha presentado un completo análisis del espectro de ruido para diodos Schottky de GaAs y GaN operando tanto en condiciones estáticas como variables con el tiempo. Los resultados obtenidos en esta parte de la tesis contribuyen a mejorar la comprensión de la respuesta eléctrica y del ruido de los diodos Schottky en condiciones de altas frecuencias y/o altos campos eléctricos. También, estos resultados han ayudado a determinar las limitaciones de modelos numéricos y analíticos usados en el análisis de la respuesta eléctrica y del ruido electrónico en los diodos Schottky. La segunda parte de la tesis está dedicada al análisis de multiplicadores y mezcladores mediante una herramienta de simulación de circuitos basada en la técnica de balance armónico. Diferentes modelos basados en circuitos equivalentes del dispositivo, en las ecuaciones de arrastre-difusión y en la técnica de Monte Carlo se han considerado en este análisis. El modelo de Monte Carlo acoplado a la técnica de balance armónico se ha usado como referencia para evaluar las limitaciones y el rango de validez de modelos basados en circuitos equivalentes y en las ecuaciones de arrastredifusión para el diseño de circuitos multiplicadores y mezcladores. Una notable característica de esta herramienta de simulación es que permite diseñar circuitos Schottky teniendo en cuenta tanto la respuesta eléctrica como el ruido generado en los dispositivos. Los resultados de las simulaciones presentados en esta parte de la tesis, tanto paramultiplicadores comomezcladores, se han comparado con resultados experimentales publicados en la literatura. El simulador que integra el modelo de Monte Carlo con la técnica de balance armónico permite analizar y diseñar circuitos a frecuencias superiores a 1 THz. ABSTRACT The terahertz region of the electromagnetic spectrum(100 GHz-10 THz) presents a wide range of applications such as radio-astronomy, molecular spectroscopy, medicine, security and radar, among others. The main obstacles for the development of these applications are the high production cost of the systems working at these frequencies, highmaintenance, high volume and low reliability. Among the different THz technologies, Schottky technology plays an important rule due to its maturity and the inherent simplicity of these devices. Besides, Schottky diodes can operate at both room and cryogenic temperatures, with high efficiency in multipliers and moderate noise temperature in mixers. This PhD. thesis is mainly concerned with the analysis of the physical processes responsible for the characteristics of the electrical response and noise of Schottky diodes, as well as the analysis and design of frequency multipliers and mixers at millimeter and submillimeter wavelengths. The first part of the thesis deals with the analysis of the physical phenomena limiting the electrical performance of GaAs and GaN Schottky diodes and their noise performance. To carry out this analysis, a Monte Carlo model of the diode has been used as a reference due to the high accuracy and reliability of this diode model at millimeter and submillimter wavelengths. Besides, the Monte Carlo model provides a direct description of the noise spectra of the devices without the necessity of any additional analytical or empirical model. Physical phenomena like velocity saturation, carrier inertia, dependence of the electron mobility on the epilayer length, plasma resonance and nonlocal effects in time and space have been analysed. Also, a complete analysis of the current noise spectra of GaAs and GaN Schottky diodes operating under static and time varying conditions is presented in this part of the thesis. The obtained results provide a better understanding of the electrical and the noise responses of Schottky diodes under high frequency and/or high electric field conditions. Also these results have helped to determine the limitations of numerical and analytical models used in the analysis of the electrical and the noise responses of these devices. The second part of the thesis is devoted to the analysis of frequency multipliers and mixers by means of an in-house circuit simulation tool based on the harmonic balance technique. Different lumped equivalent circuits, drift-diffusion and Monte Carlo models have been considered in this analysis. The Monte Carlo model coupled to the harmonic balance technique has been used as a reference to evaluate the limitations and range of validity of lumped equivalent circuit and driftdiffusion models for the design of frequency multipliers and mixers. A remarkable feature of this reference simulation tool is that it enables the design of Schottky circuits from both electrical and noise considerations. The simulation results presented in this part of the thesis for both multipliers and mixers have been compared with measured results available in the literature. In addition, the Monte Carlo simulation tool allows the analysis and design of circuits above 1 THz.