Studies on radiation pasteurisation of medium fatty fish 2. Precursors of yellow discolouration in irradiated white pomfret (Stromateus cinereus)

Triglycerides, phospholipids and sarcoplasmic proteins fractions of white pomfret produced considerable amounts of thiobarbituric acid reactive substances (TBRS) on irradiation. Incubation of malonaldehyde with pomfret skin under aseptic conditions developed yellow pigmentation of the skin tissues, similar in spectral characteristics to those produced on irradiation of the skin.

Identification of vacancies in electron irradiated GaSb by coincidence Doppler broadening spectroscopy

In this paper we present the results of coincidence Doppler broadening (CDB) measurements and positron lifetime spectroscopy (PLS) on the semiconductor material GaSb. Gallium vacancy with positron lifetime of about 283 ps (V-Ga, (283 ps)) was identified in as-grown sample by CDB technique and PAS technique. For electron irradiated samples with dosages of 10(17) cm(-2) and 10(18) cm(-2), the PAS showed almost the same defectrelated positron lifetime of about 285 ps. CDB experiments indicated that defects in irradiated samples were related to Ga vacancies. (c) 2006 Published by Elsevier B.V.

Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

Current-based microscopic defect analysis method such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current have been developed over the years at Brookhaven National Laboratory (BNL) for the defect characterizations on heavily irradiated (Phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k Omega cm) Si sensors/detectors. The conventional DLTS method using a capacitance transient is not valid on heavily irradiated high-resistivity Si sensors/detectors. A new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. Optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity Si sensors/detectors. (c) 2006 Published by Elsevier Ltd.

Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient

Isochronal thermal-annealing behavior of NTD floating-zone silicon grown in hydrogen ambient (called NTD FZ(H) Si) is presented. The dependencies of resistivity and carrier mobility on annealing temperature are determined by room-temperature Hall electrical measurements. Using infrared absorption spectroscopy, hydrogen-related infrared absorption bands evolution for NTD FZ(H) Si were measured in detail. It is demonstrated that compared with NTD FZ(Ar) Si, NTD FZ(H) Si exhibits the striking features upon isochronal annealing in temperature range of 150 similar to 650 degreesC: there appears the formation of an excessive shallow donor at annealing temperature of 500 degreesC. It is shown that the annealing behavior is directly related to the reaction of hydrogen and irradiation-induced defects. The evolution of infrared absorption bands upon temperature reflects a series of complex reaction process: irradiation-induced defects decomposition, breaking of Si-H bonds, migration and aggregation of atomic hydrogen, and formation of the secondary defects. (C) 2002 Elsevier Science B.V. All rights reserved.

Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

Current-based microscopic defect analysis method such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current have been developed over the years at Brookhaven National Laboratory (BNL) for the defect characterizations on heavily irradiated (Phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k Omega cm) Si sensors/detectors. The conventional DLTS method using a capacitance transient is not valid on heavily irradiated high-resistivity Si sensors/detectors. A new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. Optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity Si sensors/detectors. (c) 2006 Published by Elsevier Ltd.

尼龙1010的平衡热力学参数及其γ-辐照产物的结晶过程

尼龙1010是我国特有的工程塑料。但对它的结构与性能的基础研究并不多见。迄今为止，许多聚酰胺的晶胞参数已被测定，并比较准确地计算出它们的结晶密度ρ_c。可是，尚未见到过有关尼龙1010的ρ_c的报道。此外，结晶高聚物的平衡熔融温度T°_m和平衡熔融热ΔH°_m是非常重要的热力学参数，尤其是后者更是用量热法计算结晶度的基准。早在50年代，Flory等对它的T°_m和ΔH°_m进行了许多研究，由于受当时历史条件限制，这些数值的准确性不高，不能当作平衡状态的数值。尼龙1010经γ-射线辐照后，有可能提高它的使用温度，扩大它的应用范围和领域。但至今未见到过大剂量下γ-辐照尼龙1010及其添加强化交联剂BMI的γ辐照产物的热学性能和结晶过程的研究。随着科学技术的发展，目前迫切需要准确的尼龙1010的ρ_c、T°_m、ΔH°_m的数值，以及大剂量下γ-辐照产物的热学性能和结晶过程的详细研究，以便更合理地开发和利用这一材料为四化建设服务。本文用DSC差示扫描量热仪、红外光谱仪、广角X-射线衍射仪以及TMS热机械仪等研究手段，准确地测定了尼龙1010的平衡热力学参数，并对尼龙1010及其添加强化交联剂BMI的γ-辐照产物的热学性能和结晶过程进行了详细的研究。用红外吸光度-密度外推法求得尼龙1010的ρ_a（非晶密度）= 1.003 ρ_c = 1.098g/cm~3。1.098g/cm~3与用X-射线衍射法求得的1.135g/cm~3比较，认为后者更为合理。用介稳态结晶试样的ΔH_m-(V-bar)_(sp)的线性关系，求得尼龙1010的平衡熔融热。ΔH°_m = 244.0J/g。企图用常用的Hoffman Tm-Tc外推法来确定尼龙1010的平衡熔融温度T°_m，但未能成功，并指出其升温过程中重结晶异常迅速是此法行不通的主要原因。用Kamide提出的双重外推法成功地求得尼龙1010的平衡熔融温度：T°_m = 487 K = 214 ℃通过详细地研究尼龙1010及其添加强化并联剂BMI的γ辐照产物的热学性能，发现强化交联剂BMI的加入，使尼龙1010大分子的交联更容易，但也使得空间网络较松散；同时γ辐照尼龙1010在再次等速升温过程中出现冷结晶峰是辐照产物中存在可结晶部分、交联网络阻碍可结晶部分结晶两者共同作用的结果。交联网络使可结晶部分在降温过程中来不及结晶，当再次升温到玻璃化转变温度以上时，链段冻结被解除，可结晶的分子链段进行有序排列而结晶，导致冷结晶峰的出现。冷结晶峰的强度和位置与辐照产物中可结晶部分的多少、交联网络的大小即相邻交联点之间的分子量Mc的大小、交联网络的松散程度以及试样的热历史都有关。选择适当的等温结晶温度，用DSC-2C型差示扫描量热仪研究了尼龙1010及其γ-辐照产物和添加强化交联剂BMI的γ-辐照产物的等温结晶过程。用DSC-2C 3600 TADS计算机自带的部分面积程序进行动力学数据处理。通过仔细的等温结晶动力学研究，发现γ辐照尼龙10104 Avrami指数n几乎不受辐照剂量R和强化交联剂BMI的影响，且一般为3.75，这说明尼龙1010及其γ辐照产物的结晶过程接近于均相三维成核。随着辐照剂量R和强化交联剂BMI含量的增大，折迭链表面自由能σe值增大，σe值的分布可能变宽，σe值的这种变化可以归因于辐照剂量R和强化交联剂BMI的含量增大时，交联网络增多，交联密度增大，Mc值的分布变宽，链尾和小链圈的数目增多，活动性减小，同时链尾也增长，结果导致σe（链尾、链圈）增大，从而σe值变大，σe值的分布可能变宽。σe值的这种变化也正是过冷度增大、拖尾现象严重、总的动力学速率常数Kn和结晶速率t_(0.5)~(-1)变小的总根源。由此可见，对于分子量不同或分子结构有差别的同一种结晶高聚物来说，σe值可以作为衡量结晶能力大小的定量标准。