996 resultados para IMP
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Trata do estabelecimento de idade mínima para imputabilidade penal no Brasil, desde o Código Criminal do Império, de 1830, e o primeiro Código dos Menores, em 1927, até a fixação dos dezoito anos no art. 228 da Constituição da República, em 1988. Demonstra a importância da análise comparada sobre Idade Mínima de Responsabilidade Penal - IMRP e Idade de Maioridade Penal - IMP em diversos países. Chega-se à conclusão de que o parâmetro brasileiro de IMRP aos doze anos e IMP aos dezoito anos está em conformidade com os compromissos globais que regulam o direito e o processo em matéria de justiça juvenil, e está equilibrado em relação aos índices aplicados no contexto interamericano e mundial.
Um protesto : resposta ás pretenções da França a uma parte do Amazonas manifestadas por Mr. Deloncle
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Dado de responsabilidade pesquisado no Lello Universal em 2 volumes, 19-? v. 2 p. 192.
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The paper examines the concept of the feminization of poverty and reviews the limited evidence on the extent of poverty among women. It then examines the arguments that poor women can be highly effective change agents for the eradication of poverty. However, all the women may be considered as instruments for eliminating poverty, lack of understanding an appreciation of the impact of their sex roles and of gender roles and stereotypes continue to prevent the realization of this potential. Therefore, the paper moves on to summarize the differences between sex and gender and examines how both women's sexes roles and the imp gender roles and stereotypes lead to the feminization of poverty and exclude women from the participation in development and programmes to eliminate poverty. The paper reviews the major approaches: women in development or WID, gender and development or GAD and extension of GAD known as mainstreaming. Finally, it considers the issue of poverty, women and gender in Nigeria. It also advances a number of recommendations on women and gender poverty and rural development for the consideration of policy-makers in Nigeria
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The anisotropy of 1.3 - 2.3 MeV protons in interplanetary space has been measured using the Caltech Electron/Isotope Spectrometer aboard IMP-7 for 317 6-hour periods from 72/273 to 74/2. Periods dominated by prompt solar particle events are not included. The convective and diffusive anisotropies are determined from the observed anisotropy using concurrent solar wind speed measurements and observed energy spectra. The diffusive flow of particles is found to be typically toward the sun, indicating a positive radial gradient in the particle density. This anisotropy is inconsistent with previously proposed sources of low-energy proton increases seen at 1 AU which involve continual solar acceleration.
The typical properties of this new component of low-energy cosmic rays have been determine d for this period which is near solar minimum. The particles have a median intensity of 0.06 protons/ cm^(2)-sec-sr-MeV and a mean spectral index of -3.15.The amplitude of the diffusive anisotropy is approximately proportional to the solar wind speed. The rate at which particles are diffusing toward the sun is larger than the rate at which the solar wind is convecting the particles away from the sun. The 20 to 1 proton to alpha ratio typical of this new component has been reported by Mewaldt, et al. (1975b).
A propagation model with κ_(rr) assumed independent of radius and energy is used to show that the anisotropy could be due to increases similar to those found by McDonald, et al. (1975) at ~3 AU. The interplanetary Fermi-acceleration model proposed by Fisk (1976) to explain the increases seen near 3 AU is not consistent with the ~12 per cent diffusive anisotropy found.
The dependence of the diffusive anisotropy on various parameters is shown. A strong dependence of the direction of the diffusive anisotropy on the concurrently measured magnetic field direction is found, indicating a κ_⊥ less than κ_∥ to be typical for this large data set.
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The isotopic composition of hydrogen and helium in solar cosmic rays provides a means of studying solar flare particle acceleration mechanisms since the enhanced relative abundance of rare isotopes, such as 2H, 3H and 3He, is due to their production by inelastic nuclear collisions in the solar atmosphere during the flare. In this work the Caltech Electron/Isotope Spectrometer on the IMP-7 spacecraft has been used to measure this isotopic composition. The response of the dE/dx-E particle telescope is discussed and alpha particle channeling in thin detectors is identified as an important background source affecting measurement of low values of (3He/4He).
The following flare-averaged results are obtained for the period, October, 1972 - November, 1973: (2H/1H) = 7+10-6 X 10-6 (1.6 - 8.6 MeV/nuc), (3H/1H) less than 3.4 x 10-6 (1.2 - 6.8 MeV/nuc), (3He/4He) = (9 ± 4) x 10-3, (3He/1H) = (1.7 ± 0.7) x 10-4 (3.1 - 15.0 MeV/nuc). The deuterium and tritium ratios are significantly lower than the same ratios at higher energies, suggesting that the deuterium and tritium spectra are harder than that of the protons. They are, however, consistent with the same thin target model relativistic path length of ~ 1 g/cm2 (or equivalently ~ 0.3 g/cm2 at 30 MeV/nuc) which is implied by the higher energy results. The 3He results, consistent with previous observations, would imply a path length at least 3 times as long, but the observations may be contaminated by small 3He rich solar events.
During 1973 three "3He rich events," containing much more 3He than 2H or 3H were observed on 14 February, 29 June and 5 September. Although the total production cross sections for 2H,3H and 3He are comparable, an upper limit to (2H/3He) and (3H/3He) was 0.053 (2.9-6.8 MeV/nuc), summing over the three events. This upper limit is marginally consistent with Ramaty and Kozlovsky's thick target model which accounts for such events by the nuclear reaction kinematics and directional properties of the flare acceleration process. The 5 September event was particularly significant in that much more 3He was observed than 4He and the fluxes of 3He and 1H were about equal. The range of (3He/4He) for such events reported to date is 0.2 to ~ 6 while (3He/1H) extends from 10-3 to ~ 1. The role of backscattered and mirroring protons and alphas in accounting for such variations is discussed.
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The isotopic composition of the enhanced low energy nitrogen and oxygen cosmic rays can provide information regarding the source of these particles. Using the Caltech Electron/Isotope Spectrometer aboard the IMP-7 satellite, a measurement of this isotopic composition was made. To determine the isotope response of the instrument, a calibration was performed, and it was determined that the standard range-energy tables were inadequate to calculate the isotope response. From the calibration, corrections to the standard range-energy tables were obtained which can be used to calculate the isotope response of this and similar instruments.
The low energy nitrogen and oxygen cosmic rays were determined to be primarily ^(14)N and ^(16)O. Upper limits were obtained for the abundances of the other stable nitrogen and oxygen isotopes. To the 84% confidence level the isotopic abundances are: ^(15)N/N ≤ 0.26 (5.6- 12.7 MeV/nucleon), ^(17)0/0 ≤ 0.13 (7.0- 11.8 MeV/nucleon), (18)0/0 ≤ 0.12 (7.0 - 11.2 MeV/nucleon). The nitrogen composition differs from higher energy measurements which indicate that ^(15)N, which is thought to be secondary, is the dominant isotope. This implies that the low energy enhanced cosmic rays are not part of the same population as the higher energy cosmic rays and that they have not passed through enough material to produce a large fraction of ^(15)N. The isotopic composition of the low energy enhanced nitrogen and oxygen is consistent with the local acceleration theory of Fisk, Kozlovsky, and Ramaty, in which interstellar material is accelerated to several MeV/nucleon. If, on the other hand, the low energy nitrogen and oxygen result from nucleosynthesis in a galactic source, then the nucleosynthesis processes which produce an enhancement of nitrogen and oxygen and a depletion of carbon are restricted to producing predominantly ^(14)N and ^(16)O.
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The 1-6 MeV electron flux at 1 AU has been measured for the time period October 1972 to December 1977 by the Caltech Electron/Isotope Spectrometers on the IMP-7 and IMP-8 satellites. The non-solar interplanetary electron flux reported here covered parts of five synodic periods. The 88 Jovian increases identified in these five synodic periods were classified by their time profiles. The fall time profiles were consistent with an exponential fall with τ ≈ 4-9 days. The rise time profiles displayed a systematic variation over the synodic period. Exponential rise time profiles with τ ≈ 1-3 days tended to occur in the time period before nominal connection, diffusive profiles predicted by the convection-diffusion model around nominal connection, and abrupt profiles after nominal connection.
The times of enhancements in the magnetic field, │B│, at 1 AU showed a better correlation than corotating interaction regions (CIR's) with Jovian increases and other changes in the electron flux at 1 AU, suggesting that │B│ enhancements indicate the times that barriers to electron propagation pass Earth. Time sequences of the increases and decreases in the electron flux at 1 AU were qualitatively modeled by using the times that CIR's passed Jupiter and the times that │B│ enhancements passed Earth.
The electron data observed at 1 AU were modeled by using a convection-diffusion model of Jovian electron propagation. The synodic envelope formed by the maxima of the Jovian increases was modeled by the envelope formed by the predicted intensities at a time less than that needed to reach equilibrium. Even though the envelope shape calculated in this way was similar to the observed envelope, the required diffusion coefficients were not consistent with a diffusive process.
Three Jovian electron increases at 1 AU for the 1974 synodic period were fit with rise time profiles calculated from the convection-diffusion model. For the fits without an ambient electron background flux, the values for the diffusion coefficients that were consistent with the data were kx = 1.0 - 2.5 x 1021 cm2/sec and ky = 1.6 - 2.0 x 1022 cm2/sec. For the fits that included the ambient electron background flux, the values for the diffusion coefficients that were consistent with the data were kx = 0.4 - 1.0 x 1021 cm2/sec and ky = 0.8 - 1.3 x 1022 cm2/sec.
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Preliminary study has been made of the changes in common 5' nucleotides in oil sardine (Sardinella longiceps) and two Penaeid prawns of Indian waters during chill storage. The course of nucleotide degradation has been followed in the fresh fish and shell fish during ice storage. The level of inosine monophosphate (IMP) in prawns showed significant but steady decrease during ice storage and this appears to serve as useful indication of length of storage. Comparison has been made on the pattern of nucleotide changes in block frozen fish and individually quick frozen fish stored at -23°C.
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Fe-doped semi-insulating (SI) InP has become semi-conducting (SC) material completely after annealing at 900 V for 10 hours. Defects in the SC and SI InP materials have been studied by deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) respectively. The DLTS only detected Fe acceptor related deep level defect with significant concentration, suggesting the formation of a high concentration of shallow donor in the SC-InP TSC results confirmed the nonexistence of deep level defects in the annealed SI-InP. The results demonstrate a significant influence of the thermally induced defects on the electrical properties of SI-InP. The formation mechanism and the nature of the shallow donor defect have been discussed based on the results.
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Hexagonal GaN films (similar to 3 mu m) were grown on 3c-SiC/Si(111) and carbonized Si(111) substrates using a thick AlN buffer Cracks are observed on the surface of the GaN film grown on the carbonized Si(111), while no cracks are visible on the 3c-SiC/Si(111). XRD exhibits polycrystalline nature of the GaN film grown on the carbonized Si(111) due to poorer crystalline quality of this substrate. Raman spectra reveal that all GaN layers are under tensile stress, and the GaN layer grown on 3c-SiC/Si(111) shows a very low stress value of sigma(xx) = 0.65 Gpa. In low-temperature Photoluminescence spectra the remarkable donor-acceptor-pair recombination and yellow band can be attributed to the incorporation of Si impurities from the decomposition of SiC.
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4H-SiC layers have been homoepitaxially grown at 1500 degrees C with the use of a horizontal hot-wall chemical vapor deposition (CVD) system, which was built in the author's group. The typical growth rate was 2 mu m/h at a pressure of 40 Torr. The background donor concentration has been reduced to 2.3 x 10(15) cm(-3) during a prolonged growth run. It confirmed the idea that the high background concentration of thin films was caused by the impurities inside the susceptor and thermal insulator The FWHM of x-ray co-rocking curves show 9 similar to 15 aresecs in five different areas of a 32-mu m-thick 4H-SiC epilayer The free exciton peaks dominated in the near-band-edge low-temperature photoluminescence spectrum (LTPL), indicating high crystal quality.
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Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.
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A promising approach for positioning of InAs islands on (110)GaAs is demonstrated. By combining self-assembly of quantum dots with solid source molecular beam epitaxy (MBE) on cleaved edge of InGaAs/GaAs superlattice (SL), linear alignment of InAs islands on the InGaAs strain layers have been fabricated The cleaved edge of InGaAs/GaAs SL acts as strain nanopattern for InAs selective growth. Indium atoms incident on the surface will preferentially migrate to InGaAs regions where favorable bonding sites are available. The strain nanopattern's effect is studied by the different indium fraction and thickness of InxGa1-xAs/GaAs SL. The ordering of the InAs islands is found to depend on the properties of the underlying InGaAs strain layers.