Estudio de PMN cerámico dopado con KNbO3 y LiNbO 3 sintetizado por Pechini

PMN belongs to a special class of materials named relaxor ferroelectrics. It has high volumetric efficiency due to its high dielectric constant, which makes it in a perfect material for application in multilayer capacitors. When prepared the columbite route its preparation has many advantages. In this work, the preparations of columbite and PMN were done by Pechini and Partial Oxalate methods, respectively. The effects of the KNbO3 and LiNbO3 dopants added in various concentrations. The idea is founded on the correlations that they have with BaTiO3 y PbTiO3, respectively. The whole process was supervised by TG/DTA, XRD, SEM and determination of the specific surface area of the powders. LiNbO3 carries out the pre-sinterization of the particles, observed by a reduction in the surface area. There are not particle grow, but occur its lengthening. However, for KNbO3 these particle growth, but the agglomerates are softer. The effect produced by the doping during the synthesis of the PMN powder is different from the one produced in the columbite precursor. Pure precursor shows an average particle size of 0,2μm, but the addition of 5,0mol% of dopants carries out the formation of agglomerates close to 4μm. LiNbO 3 addition carries out spherical particles and pre-sinterization, while KNbO3 addition does not change the particles shape.

Physical characterization of K-doped 0.9PMN-0.1PT synthesized by an association of the columbite route and the polymeric precursor method

The solid solution 0.9PbMg 1/3Nb 2/3O 3-0.1PbTiO 3 is one of the most widely investigated relaxor ceramic, because of its high dielectric constant and low sintering temperatures. PMN-PT powders containing single perovskite phase were prepared by using a Timodified columbite precursor obtained by the polymeric precursor method. Such precursor reacts directly with stoichiometric amount of PbO to obtain pyrochlore-free PMN-PT powders. The structural effects of K additive included in the columbite precursor and 0.9PMN-0.1PT powders were also studied. The phase formation at each processing step was verified by XRD analysis, being these results used for the structural refinement by the Rietveld method. It was verified the addition of K in the columbite precursor promotes a slight increasing in the powder crystallinity. There was not a decrease in the amount of perovskite phase PMN-PT for 1mol% of K, and the particle and grain size were reduced, making this additive a powerful tool for grain size control.

Estudo da correlação entre propriedades não-ôhmicas, processos de relaxação dielétrica e microestrutura de cerâmicas policristalinas do tipo (Ca IND. 1/4 Cu IND. 3/4)TiO IND. 3

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influência dos defeitos cristalinos nas propriedades dielétricas e não-ôhmicas do 'CA' 'CU IND.3' 'TI IND.4' 'O IND.12'(CCTO)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo da cerâmica PZT sob o ponto de vista microestrutural e propriedades eletro-ópticas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influência dos dopantes potássio e lítio na cerâmica relaxora niobato de chumbo e magnésio (PMN)

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Síntese e caracterização dielétrica de filmes finos de Bi3NbO7 obtidos pelo método dos precursores poliméricos

Bi3NbO7 thin films were prepared by the polymeric precursor method. The precursor solutions were prepared with excess of bismuth ranging from 0% to 10% and the pH was controlled to be maintained between 8 and 9. This control was done by adding to the solution niobium and ethylene glycol. The final solution was clear and free of precipitation. After obtaining the precursor solution, has begun the process of characterization of powders with thermogravimetry (TG), differential thermal analysis and X-ray analysis (XRD). The films were obtained by the polymeric precursors, the method is advantageous because it is simple, and low cost involves steps and controlled stoichiometry. The films were annealed and characterized by XRD and SEM and also characterized according to their dialectics properties. We observed that the best results were obtained when the film is thermally at 800 ° C for two hours and 860 ° C for two hour. Under these conditions we obtain Bi3NbO7 thin films with good homogeneity, uniform distribution of the grains, but with the formation of secondary phase, which does not occur in treatments with lower temperature. The dielectric characterization showed that the produced film showed good characteristics with high dielectric constant and low loss

Desenvolvimento de filmes finos de Bi3NbO7 pelo método dos precursores poliméricos em diferentes eletrodos óxidos

Technology always advances and thus the device miniaturization and improved performance, besides multifunctionality, they become extremely necessary. A wave of research on the area tends to grow in number and importance in today's market, it is necessary to search for new materials, new applicability of the existing ones and new processes for increasingly cheaper costs. Dielectric materials are considered a key element in this sector being the main electrical properties its high dielectric constant and low dielectric loss. The Polymeric Precursor Method appears as a good alternative because is a low cost, simple process with controlled stoichiometry. In this method, two steps were performed. In a first step, the precursor solution was decomposed into powders and in a second step the precursor solution was converted in thin films. In this work, was used the polymeric precursor methods to get thin films where they were heat treated and characterized by XRD, SEM and AFM. We have obtained Bi3NbO7 thin films with good homogeneity and uniform distribution of grains were noted. We observed that the best condition to obtain the tetragonal phase is annealing the film at high temperatures for a longer soaking time and with excess of bismuth. Several oxides electrodes were evaluated aiming to obtain textured dielectric thin films

Surface analysis of alumina ceramic exposed to shock waves produced by plasma expander

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Análise da resposta dielétrica e varistora de compostos cerâmicos multifásicos à base de Ca2CU2Ti4-xSnxO12 (0,0 < x< 4,0)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Acqua: solvente elettivo in Organocatalisi e Biocatalisi

Water is a safe, harmless, and environmentally benign solvent. From an eco-sustainable chemistry perspective, the use of water instead of organic solvent is preferred to decrease environmental contamination. Moreover, water has unique physical and chemical properties, such as high dielectric constant and high cohesive energy density compared to most organic solvents. The different interactions between water and substrates, make water an interesting candidate as a solvent or co-solvent from an industrial and laboratory perspective. In this regard, organic reactions in aqueous media are of current interest. In addition, from practical and synthetic standpoints, a great advantage of using water is immediately evident, since it does not require any preliminary drying process. This thesis was found on this aspect of chemical research, with particular attention to the mechanisms which control organo and bio-catalysis outcome. The first part of the study was focused on the aldol reaction. In particular, for the first time it has been analyzed for the first time the stereoselectivity of the condensation reaction between 3-pyridincarbaldehyde and the cyclohexanone, catalyzed by morpholine and 4-tertbutyldimethylsiloxyproline, using water as sole solvent. This interest has resulted in countless works appeared in the literature concerning the use of proline derivatives as effective catalysts in organic aqueous environment. These studies showed good enantio and diastereoselectivities but they did not present an in depth study of the reaction mechanism. The analysis of the products diastereomeric ratios through the Eyring equation allowed to compare the activation parameters (ΔΔH≠ and ΔΔS≠) of the diastereomeric reaction paths, and to compare the different type of catalysis. While morpholine showed constant diasteromeric ratio at all temperatures, the O(TBS)-L-proline, showed a non-linear Eyring diagram, with two linear trends and the presence of an inversion temperature (Tinv) at 53 ° C, which denotes the presence of solvation effects by water. A pH-dependent study allowed to identify two different reaction mechanisms, and in the case of O(TBS)-L-proline, to ensure the formation of an enaminic species, as a keyelement in the stereoselective process. Moreover, it has been studied the possibility of using the 6- aminopenicillanic acid (6-APA) as amino acid-type catalyst for aldol condensation between cyclohexanone and aromatic aldehydes. A detailed analysis of the catalyst regarding its behavior in different organic solvents and pH, allowed to prove its potential as a candidate for green catalysis. Best results were obtained in neat conditions, where 6-APA proved to be an effective catalyst in terms of yields. The catalyst performance in terms of enantio- and diastereo-selectivity, was impaired by the competition between two different catalytic mechanisms: one via imine-enamine mechanism and one via a Bronsted-acid catalysis. The last part of the thesis was dedicated to the enzymatic catalysis, with particular attention to the use of an enzyme belonging to the class of alcohol dehydrogenase, the Horse Liver Alcohol Dehydrogenase (HLADH) which was selected and used in the enantioselective reduction of aldehydes to enantiopure arylpropylic alcohols. This enzyme has showed an excellent responsiveness to this type of aldehydes and a good tolerance toward organic solvents. Moreover, the fast keto-enolic equilibrium of this class of aldehydes that induce the stereocentre racemization, allows the dynamic-kinetic resolution (DKR) to give the enantiopure alcohol. By analyzing the different reaction parameters, especially the pH and the amount of enzyme, and adding a small percentage of organic solvent, it was possible to control all the parameters involved in the reaction. The excellent enatioselectivity of HLADH along with the DKR of arylpropionic aldehydes, allowed to obtain the corresponding alcohols in quantitative yields and with an optical purity ranging from 64% to >99%.

Towards materials with enhanced electro-mechanical response: CaCu3Ti4O12-polydimethylsiloxane composites

We describe a straightforward production pathway of polymer matrix composites with increased dielectric constant for dielectric elastomer actuators (DEAs). Up to date, the approach of using composites made of high dielectric constant ceramics and insulating polymers has not evidenced any improvement in the performance of DEA devices, mainly as a consequence of the ferroelectric nature of the employed ceramics. We propose here an unexplored alternative to these traditional fillers, introducing calcium copper titanate (CCTO) CaCu3Ti4O12, which has a giant dielectric constant making it very suitable for capacitive applications. All CCTO-polydimethylsiloxane (PDMS) composites developed display an improved electro-mechanical performance. The largest actuation improvement was achieved for the composite with 5.1 vol% of CCTO, having an increment in the actuation strain of about 100% together with a reduction of 25% in the electric field compared to the raw PDMS matrix.

Design of a compact ultra-wideband antenna

A simple method for the design of ultra-wideband antennas in planar format is presented. This method is demonstrated for a high-dielectric-constant substrate material, which allows for a considerable antenna size reduction. Simulations are performed using Ansoft's High-Frequency Structure Simulator (HFSS) for antennas assuming Du-Pont951 (epsilon(r) = 7.8) and RT6010LM (epsilon(r) = 10.2) substrates. For the 1-mm-thick DuPont951, the designed antenna with 22 X 28 nun dimensions features a 10-dB return-loss band width front 2.7 GHz to more than 15 GHz. For the 0.64-mm-thick RT6010LM a 20 X 26 nun antenna exhibits a 10-dB return loss bandwidth from 3.1 to 15 GHz. Both antennas feature nearly omnidirectional properties across the whole 10-dB return-loss bandwidth. The validity of the presented UWB antenna design strategy is confirmed by measurements performed on a prototype developed on RT6010LM substrate. (c) 2006 Wiley Periodicals, Inc.

Compósitos de polímero-cerâmica para condensadores incorporados

A necessidade de produção de dispositivos eletrónicos mais eficientes e a sua miniaturização tem sido um dos principais desígnios da indústria eletrónica. Assim surgiu a necessidade de melhorar o desempenho das designadas placas de circuito impresso, tornando-as simultaneamente mais flexíveis, com menos ruído, mais estáveis face a variações bruscas de temperatura e que permitam operar numa vasta gama de frequências e potências. Para tal, uma das estratégias que tem vindo a ser estudada é a possibilidade de incorporar os componentes passivos, nomeadamente condensadores, sob a forma de filme diretamente no interior da placa. Por forma a manter uma elevada constante dielétrica e baixas perdas, mantendo a flexibilidade, associada ao polímero, têm sido desenvolvidos os designados compósitos de matriz polimérica. Nesta dissertação procedeu-se ao estudo do comportamento dielétrico e elétrico da mistura do cerâmico CaCu3Ti4O12 com o copolímero estireno-isoprenoestireno. Foram preparados filmes com diferentes concentrações de CCTO, recorrendo ao método de arrastamento, em conjunto com o Centro de Polímeros da Eslováquia. Foram também preparados filmes por spin-coating para as mesmas concentrações. Usaram-se dois métodos distintos para a preparação do pó de CCTO, reação de estado sólido e sol-gel. Foi realizada a caraterização estrutural (difração de raios-X. espetroscopia de Raman), morfológica (microscopia eletrónica de varrimento) e dielétrica aos filmes produzidos. Na caracterização dielétrica determinou-se o valor da constante dielétrica e das perdas para todos os filmes, à temperatura ambiente, bem como na gama de temperatura entre os 200 K e os 400 K, o que permitiu identificar existência de relaxações vítreas e subvítreas, e assim calcular as temperaturas de transição vítrea e energias de ativação, respetivamente. Foram realizados testes de adesão e aplicada a técnica de análise mecânica dinâmica para o cálculo das temperaturas de transição vítrea nos filmes preparados pelo método de arrastamento. Estudou-se ainda qual a lei de mistura que melhor se ajusta ao comportamento dielétrico do nosso compósito. Verificou-se que é a lei de Looyenga generalizada a que melhor se ajusta à resposta dielétrica dos compósitos produzidos.

A III-V channel field effect transistor for non-classical CMOS: process optimisation for improved gate stack function

This thesis describes a collection of studies into the electrical response of a III-V MOS stack comprising metal/GaGdO/GaAs layers as a function of fabrication process variables and the findings of those studies. As a result of this work, areas of improvement in the gate process module of a III-V heterostructure MOSFET were identified. Compared to traditional bulk silicon MOSFET design, one featuring a III-V channel heterostructure with a high-dielectric-constant oxide as the gate insulator provides numerous benefits, for example: the insulator can be made thicker for the same capacitance, the operating voltage can be made lower for the same current output, and improved output characteristics can be achieved without reducing the channel length further. It is known that transistors composed of III-V materials are most susceptible to damage induced by radiation and plasma processing. These devices utilise sub-10 nm gate dielectric films, which are prone to contamination, degradation and damage. Therefore, throughout the course of this work, process damage and contamination issues, as well as various techniques to mitigate or prevent those have been investigated through comparative studies of III-V MOS capacitors and transistors comprising various forms of metal gates, various thicknesses of GaGdO dielectric, and a number of GaAs-based semiconductor layer structures. Transistors which were fabricated before this work commenced, showed problems with threshold voltage control. Specifically, MOSFETs designed for normally-off (VTH > 0) operation exhibited below-zero threshold voltages. With the results obtained during this work, it was possible to gain an understanding of why the transistor threshold voltage shifts as the gate length decreases and of what pulls the threshold voltage downwards preventing normally-off device operation. Two main culprits for the negative VTH shift were found. The first was radiation damage induced by the gate metal deposition process, which can be prevented by slowing down the deposition rate. The second was the layer of gold added on top of platinum in the gate metal stack which reduces the effective work function of the whole gate due to its electronegativity properties. Since the device was designed for a platinum-only gate, this could explain the below zero VTH. This could be prevented either by using a platinum-only gate, or by matching the layer structure design and the actual gate metal used for the future devices. Post-metallisation thermal anneal was shown to mitigate both these effects. However, if post-metallisation annealing is used, care should be taken to ensure it is performed before the ohmic contacts are formed as the thermal treatment was shown to degrade the source/drain contacts. In addition, the programme of studies this thesis describes, also found that if the gate contact is deposited before the source/drain contacts, it causes a shift in threshold voltage towards negative values as the gate length decreases, because the ohmic contact anneal process affects the properties of the underlying material differently depending on whether it is covered with the gate metal or not. In terms of surface contamination; this work found that it causes device-to-device parameter variation, and a plasma clean is therefore essential. This work also demonstrated that the parasitic capacitances in the system, namely the contact periphery dependent gate-ohmic capacitance, plays a significant role in the total gate capacitance. This is true to such an extent that reducing the distance between the gate and the source/drain ohmic contacts in the device would help with shifting the threshold voltages closely towards the designed values. The findings made available by the collection of experiments performed for this work have two major applications. Firstly, these findings provide useful data in the study of the possible phenomena taking place inside the metal/GaGdO/GaAs layers and interfaces as the result of chemical processes applied to it. In addition, these findings allow recommendations as to how to best approach fabrication of devices utilising these layers.