844 resultados para Galaxy: solar neighborhood
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In this report, we propose an AC response equivalent circuit model to describe the admittance measurements of Cu2ZnSnS4 thin film solar cell grown by sulphurization of stacked metallic precursors. This circuit describes the contact resistances, the back contact, and the heterojunction with two trap levels. The study of the back contact resistance allowed the estimation of a back contact barrier of 246 meV. The analysis of the trap series with varying temperature revealed defect activation energies of 45 meV and 113 meV. The solar cell’s electrical parameters were obtained from the J-V curve: conversion efficiency, 1.21%; fill factor, 50%; open circuit voltage, 360 mV; and short circuit current density, 6.8 mA/cm2.
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Dissertação para obtenção do grau de Mestre em Engenharia Electrotécnica
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In the present work we report the details of the preparation and characterization results of Cu2ZnSnS4 (CZTS) based solar cells. The CZTS absorber was obtained by sulphurization of dc magnetron sputtered Zn/Sn/Cu precursor layers. The morphology, composition and structure of the absorber layer were studied by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction and Raman scattering. The majority carrier type was identified via a hot point probe analysis. The hole density, space charge region width and band gap energy were estimated from the external quantum efficiency measurements. A MoS2 layer that formed during the sulphurization process was also identified and analyzed in this work. The solar cells had the following structure: soda lime glass/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Al grid. The best solar cell showed an opencircuit voltage of 345 mV, a short-circuit current density of 4.42 mA/cm2, a fill factor of 44.29% and an efficiency of 0.68% under illumination in simulated standard test conditions: AM 1.5 and 100 mW/cm2.
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Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) with their band gap energies around 1.45 eV and 1.0 eV, respectively, can be used as the absorber layer in thin film solar cells. By using a mixture of both compounds, Cu2ZnSn(S,Se)4 (CZTSSe), a band gap tuning may be possible. The latter material has already shown promising results such as solar cell efficiencies up to 10.1%. In this work, CZTSSe thin films were grown in order to study its structure and to establish the best growth precursors. SEM micrographs reveal an open columnar structure for most samples and EDS composition profiling of the cross sections show different selenium gradients. X-ray diffractograms show different shifts of the kesterite/stannite (1 1 2) peak, which indicate the presence of CZTSSe. From Raman scattering analysis, it was concluded that all samples had traces of CZTS and CZTSSe. The composition of the CZTSSe layer was estimated using X-ray diffraction and Raman scattering and both results were compared. It was concluded that Se diffused more easily in precursors with ternary Cu–Sn–S phases and metallic Zn than in precursors with ZnS and/or CZTS already formed. It was also showed that a combination of X-ray diffraction and Raman scattering can be used to estimate the ratio of S per Se in CZTSSe samples.
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Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia Mecânica
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Dye-sensitized solar cell (DSSC) is a promising solution to global energy and environmental problems because of its clean, low-cost, high efficiency, good durability, and easy fabrication. However, enhancing the efficiency of the DSSC still is an important issue. Here we devise a bifacial DSSC based on a transparent polyaniline (PANI) counter electrode (CE). Owing to the sunlight irradiation simultaneously from the front and the rear sides, more dye molecules are excited and more carriers are generated, which results in the enhancement of short-circuit current density and therefore overall conversion efficiency. The photoelectric properties of PANI can be improved by modifying with 4-aminothiophenol (4-ATP). The bifacial DSSC with 4-ATP/PANI CE achieves a light-to-electric energy conversion efficiency of 8.35%, which is increased by ,24.6% compared to the DSSC irradiated from the front only. This new concept along with promising results provides a new approach for enhancing the photovoltaic performances of solar cells.
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Trabalho realizado sob orientação do Prof. António Brandão Moniz para a disciplina “Sócio-Economia da Inovação” do Mestrado Engenharia Integrado em Engenharia Electrotécnica e Computadores realizado na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa (Portugal)
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Dissertação para obtenção do grau de Mestrado Integrado em Engenharia Electrotécnica e de Computadores
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Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para obtenção do grau de Mestre em Engenharia Biomédica
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Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para obtenção do grau de Mestre em Engenharia Electrotécnica e de Computadores
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TiO2 films have been deposited on ITO substrates by dc reactive magnetron sputtering technique. It has been found that the sputtering pressure is a very important parameter for the structure of the deposited TiO2 films. When the pressure is lower than 1 Pa, the deposited has a dense structure and shows a preferred orientation along the [101] direction. However, the nanorod structure has been obtained as the sputtering pressure is higher than 1 Pa. These nanorods structure TiO2 film shows a preferred orientation along the [110] direction. The x-ray diffraction and the Raman scattering measurements show both the dense and the nanostructure TiO2 films have only an anatase phase, no other phase has been obtained. The results of the SEM show that these TiO2 nanorods are perpendicular to the ITO substrate. The TEM measurement shows that the nanorods have a very rough surface. The dye-sensitized solar cells (DSSCs) have been assembled using these TiO2 nanorod films prepared at different sputtering pressures as photoelectrode. And the effect of the sputtering pressure on the properties of the photoelectric conversion of the DSSCs has been studied.
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Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia Mecânica
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Dissertação para obtenção do grau de Mestre em Engenharia Eletrotécnica
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Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para a obtenção do grau de Mestre em Engenharia Electrotécnica e de Computadores
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TiO2 nanorodswere prepared by DC reactive magnetron sputtering technique and applied to dye-sensitized solar cells (DSSCs). The length of the TiO2 nanorods was varied from 1 μm to 6 μm. The scanning electronmicroscopy images showthat the nanorods are perpendicular to the substrate. Both the X-ray diffraction patterns and Raman scattering results show that the nanorods have an anatase phase; no other phase has been observed. (101) and the (220) diffraction peaks have been observed for the TiO2 nanorods. The (101) diffraction peak intensity remained constant despite the increase of nanorod length, while the intensity of the (220) diffraction peak increased almost linearly with the nanorod length. These nanorods were used as the working electrodes in DSSCs and the effect of the nanorod length on the conversion efficiency has been studied. An optimumphotoelectric conversion efficiency of 4.8% has been achieved for 4 μm length nanorods.