Optical properties of excited silicon and germanium at low temperatures

Part I of this thesis deals with 3 topics concerning the luminescence from bound multi-exciton complexes in Si. Part II presents a model for the decay of electron-hole droplets in pure and doped Ge.

Part I.

We present high resolution photoluminescence data for Si doped With Al, Ga, and In. We observe emission lines due to recombination of electron-hole pairs in bound excitons and satellite lines which have been interpreted in terms of complexes of several excitons bound to an impurity. The bound exciton luminescence in Si:Ga and Si:Al consists of three emission lines due to transitions from the ground state and two low lying excited states. In Si:Ga, we observe a second triplet of emission lines which precisely mirror the triplet due to the bound exciton. This second triplet is interpreted as due to decay of a two exciton complex into the bound exciton. The observation of the second complete triplet in Si:Ga conclusively demonstrates that more than one exciton will bind to an impurity. Similar results are found for Si:Al. The energy of the lines show that the second exciton is less tightly bound than the first in Si:Ga. Other lines are observed at lower energies. The assumption of ground state to ground-state transitions for the lower energy lines is shown to produce a complicated dependence of binding energy of the last exciton on the number of excitons in a complex. No line attributable to the decay of a two exciton complex is observed in Si:In.

We present measurements of the bound exciton lifetimes for the four common acceptors in Si and for the first two bound multi-exciton complexes in Si:Ga and Si:Al. These results are shown to be in agreement with a calculation by Osbourn and Smith of Auger transition rates for acceptor bound excitons in Si. Kinetics determine the relative populations of complexes of various sizes and work functions, at temperatures which do not allow them to thermalize with respect to one another. It is shown that kinetic limitations may make it impossible to form two-exciton complexes in Si:In from a gas of free excitons.

We present direct thermodynamic measurements of the work functions of bound multi-exciton complexes in Al, B, P and Li doped Si. We find that in general the work functions are smaller than previously believed. These data remove one obstacle to the bound multi-exciton complex picture which has been the need to explain the very large apparent work functions for the larger complexes obtained by assuming that some of the observed lines are ground-state to ground-state transitions. None of the measured work functions exceed that of the electron-hole liquid.

Part II.

A new model for the decay of electron-hole-droplets in Ge is presented. The model is based on the existence of a cloud of droplets within the crystal and incorporates exciton flow among the drops in the cloud and the diffusion of excitons away from the cloud. It is able to fit the experimental luminescence decays for pure Ge at different temperatures and pump powers while retaining physically reasonable parameters for the drops. It predicts the shrinkage of the cloud at higher temperatures which has been verified by spatially and temporally resolved infrared absorption experiments. The model also accounts for the nearly exponential decay of electron-hole-droplets in lightly doped Ge at higher temperatures.

The dispersive properties of an excited-doublet four-level atomic system

We have investigated the dispersive properties of excited-doublet four-level atoms interacting with a weak probe field and an intense coupling laser field. We have derived an analytical expression of the dispersion relation for a general excited-doublet four-level atomic system subject to a one-photon detuning. The numerical results demonstrate that for a typical rubidium D1 line configuration, due to the unequal dipole moments for the transitions of each ground state to double excited states, generally there exists no exact dark state in the system. Close to the two-photon resonance, the probe light can be absorbed orgained and propagate in the so-called superluminal form. This system may be used as an optical switch.

Excitation energies and decay properties of T = 3/2 states in ^(17)O, ^(17)F and ^(21)Na

The two lowest T = 3/2 levels in ²¹Na have been studied in the ¹⁹F(³He, n), ²⁰Ne (p,p) and ²⁰Ne (p,p’) reactions, and their excitation energies, spins, parities and widths have been determined. In a separate investigation, branching ratios were measured for the isospin-nonconserving particle decays of the lowest T = 3/2 levels in ¹⁷O and ¹⁷F to the ground state and first two excited states of ¹⁶O, by studying the ¹⁵N(³He,n) ¹⁷F*(p) ¹⁶O and ¹⁸O(³He, α)¹⁷O*(n) ¹⁶O reactions.

The ¹⁹F(³He,n) ²¹Na reaction was studied at incident energies between 4.2 and 5.9 MeV using a pulsed-beam neutron-time-of-flight spectrometer. Two T = 3/2 levels were identified at excitation energies of 8.99 ± 0.05 MeV (J > ½) and 9.22 ± 0.015 MeV (J ^π = ½⁺, Γ ˂ 40 keV). The spins and parities were determined by a comparison of the measured angular distributions with the results of DWBA calculations.

These two levels were also obsesrved as isospin-forbidden resonances in the ²⁰Ne(p,p) and ²⁰Ne(p,p’) reactions. Excitation energies were measured and spins, parities, and widths were determined from a single level dispersion theory analysis. The following results were obtained:

E_x = 8.973 ± 0.007 MeV, J ^π = 5/2 ⁺ or 3/2⁺, Γ ≤ 1.2 keV,

^Γp_o = 0.1 ± 0.05 keV; E_x = 9.217 ± 0.007 MeV, J^π = ½ ⁺,

Γ = 2.3 ± 0.5 keV, ^Γp_o = 1.1 ± 0.3 keV.

Isospin assignments were made on the basis of excitation energies, spins, parities, and widths.

Branching ratios for the isospin-nonconserving proton decays of the 11.20 MeV, T = 3/2 level in ¹⁷F were measured by the ¹⁵N(³He,n) ¹⁷ F*(p) ¹⁶O reaction to be 0.088 ± 0.016 to the ground state of ¹⁶O and 0.22 ± 0.04 to the unresolved 6.05 and 6.13 MeV levels of ¹⁶O. Branching ratios for the neutron decays of the analogous T = 3/2 level, at 11.08 MeV in ¹⁷O, were measured by the ¹⁶O(³He, α)¹⁷O*(n)¹⁶O reaction to be 0.91 ± 0.15 to the ground state of ¹⁶O and 0.05 ± 0.02 to the unresolved 6.05 and 6.13 MeV states. By comparing the ratios of reduced widths for the mirror decays, the form of the isospin impurity in the T = 3/2 levels is shown to depend on T_z.

Mass measurements of some proton-rich nuclei

The Q values and 0^o cross sections of (He³, n) reactions forming seven proton-rich nuclei have been measured with accuracies varying from 6 to 18 keV. The Q values (in keV) are: Si²⁶ (85), S³⁰ (-573), Ar³⁴ (-759), Ti⁴² (-2865), Cr⁴⁸ (5550), Ni⁵⁶ (4513) and Zn⁶⁰ (818). At least one excited state was found for all but Ti⁴². The first four nuclei complete isotopic spin triplets; the results obtained agree well with charge-symmetry predictions. The last three, all multiples of the α particle, are important in the α and e-process theories of nucleo-synthesis in stars. The energy available for β decay of these three was found by magnetic spectrometer measurements of the (He³, p) Q values of reactions leading to V⁴⁸, Co⁵⁶, and Cu⁶⁰. Many excited states were seen: V⁴⁸ (3), Co⁵⁶ (15), Cu⁶⁰ (23). The first two states of S³⁰ are probably 0⁺ and 2⁺ from (He³, n) angular distribution measurements. Two NaI γ-ray measurements are described: the decay of Ar³⁴ (measured ^Ƭ1/2 = 1.2 ± 0.3s) and the prompt γ-ray spectrum from Fe⁵⁴(He³, nγ)Ni⁵⁶. Possible collective structure in Ni⁵⁶ and Ca⁴⁰, both doubly magic, is discussed.

The (He³, n) neutron energy and yield measurements utilized neutron-induced nuclear reactions in a silicon semiconductor detector. Cross sections for the most important detection processes, Si²⁸ (n, α) Mg²⁵ and Si²⁸ (n, p) Al²⁸, are presented for reactions leading to the first four states of both residual nuclei for neutron energies from 7.3 to 16.4 MeV. Resolution and pulse-height anomalies associated with recoil Mg²⁵ and Al²⁸ ions are discussed. The 0^o cross section for Be⁹ (α, n) C¹², used to provide calibration neutrons, has been measured with a stilbene spectrometer for n_o (5.0 ≤ E_α ≤ 12 MeV), n₁ (4.3 ≤ E_α ≤ 12.0 MeV) and n₂ (6.0 ≤ E_α ≤ 10.1 MeV). Resonances seen in the n_o yield may correspond to nine new levels in C¹³.

Electronic states of a hydrogenic donor impurity in semiconductor nano-structures

We propose a method for uniformly calculating the electronic states of a hydrogenic donor impurity in low-dimensional semiconductor nano-structures in the framework of effective-mass envelope-function theory, and we study the electronic structures of this systems. Compared to previous methods, our method has the following merits: (a) It can be widely applied in the calculation of the electronic states of hydrogenic donor impurities in nano-structures of various shapes; (b) It can easily be extended to study the effects of external fields and other complex cases; (c) The excited states are more easily calculated than with the variational method; (d) It is convenient to calculate the change of the electronic states with the position of a hydrogenic donor impurity in nano-structures; (e) The binding energy can be calculated explicitly. (c) 2007 Elsevier B.V. All rights reserved.

Influence of mode symmetry on quality factors of degenerate states in microlasers with an equilateral triangle resonator

Modes in equilateral triangle resonator (ETR) are analyzed and classified according to the irreducible representations of the point group C-3v., Both the analytical method based on the far field emission and the numerical method by FDTD technique are used to calculate the quality factors (Q-factors) of the doubly degenerate states in ETR. Results obtained from the two methods are in reasonable agreement. Considering the different symmetry properties of the doubly degenerate eigenstates, we also discuss the ETR joined with an output waveguide at one of the vertices by FDTD technique and the Pade approximation. The variation of Q-factors versus width of output waveguide is analyzed. The numerical results show that doubly degenerate eigenstates of TM0.36 and TM0.38 whose wavelengths are around 1.5 mu m in the resonator with side-length of 5 mu m have the Q-factors larger than 1000 when the width of the output waveguide is smaller than 0.4 mu m. When the width of the output waveguide is set to 0.3 mu m, the symmetrical states that are more efficiently coupled to output waveguide have Q-factors about 8000, which are over 3 times larger than those of asymmetric state.

Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating

In this letter, we present a facet coating design to delay the excited state (ES) lasing for 1310 nm InAs/GaAs quantum dot lasers. The key point of our design is to ensure that the mirror loss of ES is larger than that of the ground state by decreasing the reflectivity of the ES. In the facet coating design, the central wavelength is at 1480 nm, and the high- and low-index materials are Ta2O5 and SiO2, respectively. Compared with the traditional Si/SiO2 facet coating with a central wavelength of 1310 nm, we have found that with the optimal design the turning temperature of the ES lasing has been delayed from 90 to 100 degrees C for the laser diodes with cavity length of 1.2 mm. Furthermore, the characteristic temperature (T-0) of the laser diodes is also improved.

Ab initio calculations for the neutral and charged O vacancy in sapphire

The energetics, lattice relaxation, and the defect-induced states of st single O vacancy in alpha-Al2O3 are studied by means of supercell total-energy calculations using a first-principles method based on density-functional theory. The supercell model with 120 atoms in a hexagonal lattice is sufficiently large to give realistic results for an isolated single vacancy (square). Self-consistent calculations are performed for each assumed configuration of lattice relaxation involving the nearest-neighbor Al atoms and the next-nearest-neighbor O atoms of the vacancy site. Total-energy data thus accumulated are used to construct an energy hypersurface. A theoretical zero-temperature vacancy formation energy of 5.83 eV is obtained. Our results show a large relaxation of Al (O) atoms away from the vacancy site by about 16% (8%) of the original Al-square (O-square) distances. The relaxation of the neighboring Al atoms has a much weaker energy dependence than the O atoms. The O vacancy introduces a deep and doubly occupied defect level, or an F center in the gap, and three unoccupied defect levels near the conduction band edge, the positions of the latter are sensitive to the degree of relaxation. The defect state wave functions are found to be not so localized, but extend up to the boundary of the supercell. Defect-induced levels are also found in the valence-band region below the O 2s and the O 2p bands. Also investigated is the case of a singly occupied defect level (an F+ center). This is done by reducing both the total number of electrons in the supercell and the background positive charge by one electron in the self-consistent electronic structure calculations. The optical transitions between the occupied and excited states of the: F and F+ centers are also investigated and found to be anisotropic in agreement with optical data.

Exciton states in isolated quantum wires

The exciton states in isolated and semi-isolated quantum wires are studied. It is found that the image charges have a large effect on the effective Coulomb potential in wires. For the isolated wire the effective potential approaches the Coulomb potential in vacuum at large z distance. For the semi-isolated wire the effective potential is intermediate between the Coulomb potential in vacuum and the screened Coulomb potential at large distance. The exciton binding energy in the isolated wire is about ten times larger than that in the quantum well, and that in the semi-isolated wire is also intermediate between those in the isolated wire and in the quantum well. When the lateral width increases the binding energy decreases further, and approaches that in the quantum well. The real valence-band structure is taken into account, the exciton wave functions of the ground state in the zero-order approximation are given, and the reduced mass is calculated. The effect of the coupling between the ground and excited states are considered by the degenerate perturbation method, and it is found the coupling effect is small compared to the binding energy.

Photoionization of 1s electron and corresponding shake-up process in ground and excited lithium atoms

The cross sections of the 18 electron photoionization and corresponding shake-up processes for Li atoms in the ground state 1s(2)2s and excited states 1s(2)2p, 1s(2)3p, 1s(2)3p and 1s(2)3d are calculated using the multi-configuration Dirac-Fock method. The latest experimental photoelectron spectrum at hv = 100 eV [Cubaynes D et al. Phys. Rev. Lett. 99 (2007) 213004] has been reproduced by the present theoretical investigation excellently. The relative intensity of the shake-up satellites shows that the effects of correlation and relaxation become more important for the higher excited states of the lithium atom, which are explained very well by the spatial overlap of the initial and final state wavefunctions. In addition, strong dependence of the cross section on the atomic orbitals of the valence electrons are found, especially near the threshold.

Observation of negative-parity high spin states of Cs-126

The nucleus Cs-126 was investigated by means of in-beam gamma-ray spectroscopy techniques using the Nordball detector system at the Niels Bohr Institute. Excited states of Cs-126 were populated via the Cd-116(N-14, 4n)Cs-126 reaction at a beam energy of 65 MeV. The Cs-126 level scheme was considerably extended, especially at negative parity and about 40 new levels and 70 new transitions were added into the level scheme. The previously reported negative-parity rotational bands, built on pi g(7/2)circle times nu h(11/2),pi d(5/2)circle times nu h(11/2),pi h(11/2)circle times nu g(7/2), and pi h(11/2)circle times nu d(5/2) configurations, have been extended and evolve into bands involving rotationally aligned (pi h(11/2))(2) and (nu h(11/2))(2) quasiparticles. Two new rotational bands have been tentatively assigned the pi h(11/2)circle times nu s(1/2) and pi g(9/2)circle times nu h(11/2) configurations, respectively

Low-spin signature inversion in the pi h(9/2)circle times nu i(13/2) oblate band

Excited states in Tl-188,Tl-190 have been studied experimentally by means of in-beam gamma spectroscopy techniques, and resulted in the identification of a strongly coupled band based on the pi h(9/2) circle times nu i(13/2) configuration with oblate deformation. The oblate band in doubly odd Tl nuclei shows low-spin signature inversion. It is the first experimental observation of low-spin signature inversion for a band associated with the oblate pi h(9/2) circle times nu i(13/2) configuration.

Fine structure of alpha decay to rotational states of heavy nuclei

To gain a better insight into alpha-decay fine structure, we calculate the relative intensities of alpha decay to 2(+) and 4(+) rotational states in the framework of the generalized liquid drop model (GLDM) and improved Royer's formula. The calculated relative intensities of a decay to 2(+) states are in good agreement with the experimental data. For the relative intensities of alpha decay to 4(+) states, a good agreement with experimental data is achieved for Th and U isotopes. The formula we obtain is useful for the analysis of experimental data of alpha-decay fine structure. In addition, some predicted relative intensities which are still not measured are provided for future experiments.

Ab initio configuration-interaction study of the ground and low-lying electronic states of NiI

For the first time, we have studied the potential-energy curves, spectroscopic terms, vibrational levels, and the spectroscopic constants of the ground and low-lying excited states of NiI by employing the complete active space self-consistent-field method with relativistic effective core potentials followed by multireference configuration-interaction calculations. We have identified six low-lying electronic states of NiI with doublet spin multiplicities, including three states of Delta symmetry and three states of Pi symmetry of the molecule within 15 000 cm(-1). The lowest (2)Delta state is identified as the ground state of NiI, and the lowest (2)Pi state is found at 2174.56 cm(-1) above it. These results fully support the previous conclusion of the observed spectra although our computational energy separation of the two states is obviously larger than that of the experimental values. The present calculations show that the low-lying excited states [13.9] (2)Pi and [14.6] (2)Delta are 3 (2)Pi and 3 (2)Delta electronic states of NiI, respectively. Our computed spectroscopic terms, vibrational levels, and spectroscopic constants for them are in good agreement with the experimental data available at present. In the present work we have not only suggested assignments for the observed states but also computed more electronic states that are yet to be observed experimentally. (c) 2005 American Institute of Physics.

Excitation of highly conjugated (porphinato)palladium(II) and (porphinato)platinum(II) oligomers produces long-lived, triplet states at unit quantum yield that absorb strongly over broad spectral domains of the NIR.

Transient dynamical studies of bis[(5,5'-10,20-bis(2,6-bis(3,3-dimethylbutoxy)phenyl)porphinato)palladium(II)]ethyne (PPd(2)), 5,15-bis{[(5'-10,20-bis(2,6-bis(3,3-dimethylbutoxy)phenyl)porphinato)palladium(II)]ethynyl}(10,20-bis(2,6-bis(3,3-dimethylbutoxy)phenyl)porphinato)palladium(II) (PPd(3)), bis[(5,5'-10,20-bis(2,6-bis(3,3-dimethylbutoxy)phenyl)porphinato)platinum(II)]ethyne (PPt(2)), and 5,15-bis{[(5'-10,20-bis(2,6-bis(3,3-dimethylbutoxy)phenyl)porphinato)platinum(II)]ethynyl}(10,20-bis(2,6-bis(3,3-dimethylbutoxy)phenyl)porphinato)platinum(II) (PPt(3)) show that the electronically excited triplet states of these highly conjugated supermolecular chromophores can be produced at unit quantum yield via fast S(1) → T(1) intersystem crossing dynamics (τ(isc): 5.2-49.4 ps). These species manifest high oscillator strength T(1) → T(n) transitions over broad NIR spectral windows. The facts that (i) the electronically excited triplet lifetimes of these PPd(n) and PPt(n) chromophores are long, ranging from 5 to 50 μs, and (ii) the ground and electronically excited absorptive manifolds of these multipigment ensembles can be extensively modulated over broad spectral domains indicate that these structures define a new precedent for conjugated materials featuring low-lying π-π* electronically excited states for NIR optical limiting and related long-wavelength nonlinear optical (NLO) applications.