Sistema visual para Ground Truth de sistemas autónomos

Este trabalho visa contribuir para o desenvolvimento de um sistema de visão multi-câmara para determinação da localização, atitude e seguimento de múltiplos objectos, para ser utilizado na unidade de robótica do INESCTEC, e resulta da necessidade de ter informação externa exacta que sirva de referência no estudo, caracterização e desenvolvimento de algoritmos de localização, navegação e controlo de vários sistemas autónomos. Com base na caracterização dos veículos autónomos existentes na unidade de robótica do INESCTEC e na análise dos seus cenários de operação, foi efectuado o levantamento de requisitos para o sistema a desenvolver. Foram estudados os fundamentos teóricos, necessários ao desenvolvimento do sistema, em temas relacionados com visão computacional, métodos de estimação e associação de dados para problemas de seguimento de múltiplos objectos . Foi proposta uma arquitectura para o sistema global que endereça os vários requisitos identi cados, permitindo a utilização de múltiplas câmaras e suportando o seguimento de múltiplos objectos, com ou sem marcadores. Foram implementados e validados componentes da arquitectura proposta e integrados num sistema para validação, focando na localização e seguimento de múltiplos objectos com marcadores luminosos à base de Light-Emitting Diodes (LEDs). Nomeadamente, os módulos para a identi cação dos pontos de interesse na imagem, técnicas para agrupar os vários pontos de interesse de cada objecto e efectuar a correspondência das medidas obtidas pelas várias câmaras, método para a determinação da posição e atitude dos objectos, ltro para seguimento de múltiplos objectos. Foram realizados testes para validação e a nação do sistema implementado que demonstram que a solução encontrada vai de encontro aos requisitos, e foram identi cadas as linhas de trabalho para a continuação do desenvolvimento do sistema global.

Modulador ressonante em ponte assimétrica para alvo do ISOLDE - CERN

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia Electrotécnica Ramo de Automação e Electrónica Industrial

Reconfigurable antenna for mobile terminal

Trabalho Final de Mestrado para obtenção do grau de Mestrado em Engenharia Electrónica e Telecomunicações

PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique

Conventional film based X-ray imaging systems are being replaced by their digital equivalents. Different approaches are being followed by considering direct or indirect conversion, with the later technique dominating. The typical, indirect conversion, X-ray panel detector uses a phosphor for X-ray conversion coupled to a large area array of amorphous silicon based optical sensors and a couple of switching thin film transistors (TFT). The pixel information can then be readout by switching the correspondent line and column transistors, routing the signal to an external amplifier. In this work we follow an alternative approach, where the electrical switching performed by the TFT is replaced by optical scanning using a low power laser beam and a sensing/switching PINPIN structure, thus resulting in a simpler device. The optically active device is a PINPIN array, sharing both front and back electrical contacts, deposited over a glass substrate. During X-ray exposure, each sensing side photodiode collects photons generated by the scintillator screen (560 nm), charging its internal capacitance. Subsequently a laser beam (445 nm) scans the switching diodes (back side) retrieving the stored charge in a sequential way, reconstructing the image. In this paper we present recent work on the optoelectronic characterization of the PINPIN structure to be incorporated in the X-ray image sensor. The results from the optoelectronic characterization of the device and the dependence on scanning beam parameters are presented and discussed. Preliminary results of line scans are also presented. (C) 2014 Elsevier B.V. All rights reserved.

Plataforma smartphone para biossensores de espectroscopia de infravermelho próximo

O tema “Plataforma smartphone para biossensores de Espectroscopia de Infravermelho Próximo”, surge no âmbito da instrumentação médica, na área das BCI – Brain Computer Interfaces, devido à necessidade de encontrar um dispositivo portátil, de custo acessível e elevada performance que permita obter informação acerca da actividade neuronal do córtex motor no decorrer duma determinada tarefa. O objectivo do trabalho consiste no desenvolvimento duma sonda capaz de detectar as alterações hemodinâmicas que ocorrem no córtex, bem como toda a instrumentação inerente à aquisição do sinal e transmissão dos dados para um computador, a análise dos dados e por fim o desenvolvimento de uma aplicação em Android para visualização dos resultados. Foi desenvolvida uma banda para a cabeça, composta pela sonda NIRS: LEDs (Light-Emiting Diodes) de 940nm e 660nm e os respectivos fototransístores de detecção, bem como toda a electrónica de condicionamento do sinal captado. Num módulo à parte, alimentado por duas baterias de 9V, encontram-se os circuitos electrónicos onde é possível regular ganhos de amplificação e offsets. Os dados foram adquiridos pelo microcontrolador Arduíno Uno, usando uma taxa de amostragem de 50Hz em cada um dos dois canais utilizados. O controlo do Arduíno foi feito utilizando o LabVIEW. Para o processamento dos dados, visualização e cálculo das concentrações de oxi e desoxi-hemoglobina no sangue recorreu-se ao Matlab. O sistema foi calibrado com recurso a um oxímetro de pulso clínico usado em cinco indivíduos saudáveis. Finalmente o sistema foi testado ao colocar-se o sensor NIRS sobre o córtex motor esquerdo de nove indivíduos saudáveis destros, fazendo-se uma aquisição de dados durante dois minutos. Utilizou-se um paradigma de 10s de repouso seguido de 10s a abrir e fechar a mão. O sistema NIRS conseguiu medir as alterações que ocorrem nas concentrações de oxi e desoxi-hemoglobina devido à actividade motora de abrir e fechar a mão. Dado o princípio físico ser o mesmo do dos oxímetros convencionais, conseguiu-se ainda medir com sucesso a frequência cardíaca e a saturação percentual de oxigénio após a calibração do sensor. As medidas podem ser visualizadas numa aplicação desenvolvida para o Android. Os resultados sugerem que com esta abordagem, este tipo de dispositivo pode estar disponível a baixo custo quer para doentes quer para indivíduos saudáveis, por exemplo em aplicações de telemóvel.

Desenvolvimento e caracterização de díodos orgânicos emissores de luz

Dissertação de mestrado integrado em Engenharia Eletrónica Industrial e Computadores

Double-Exponential Model of a Photovoltaic Cell with Temperature Dependence

The purpose of the research is the creation of mathematical models in MATLAB based on the double exponential model of the photovoltaic cell. The developed model allows for different physical and environmental parameters. An equivalent circuit of the model includes a photocurrent source, two diodes, and a series and parallel resistance. The paper presents the simulation results for each parameter. The simulation data are displayed graphically and numerical results are saved in a file.

Control of optical fields and single photon emitters by advanced nanoantenna structures

The control of optical fields on the nanometre scale is becoming an increasingly important tool in many fields, ranging from channelling light delivery in photovoltaics and light emitting diodes to increasing the sensitivity of chemical sensors to single molecule levels. The ability to design and manipulate light fields with specific frequency and space characteristics is explored in this project. We present an alternative realisation of Extraordinary Optical Transmission (EOT) that requires only a single aperture and a coupled waveguide. We show how this waveguide-resonant EOT improves the transmissivity of single apertures. An important technique in imaging is Near-Field Scanning Optical Microscopy (NSOM); we show how waveguide-resonant EOT and the novel probe design assist in improving the efficiency of NSOM probes by two orders of magnitude, and allow the imaging of single molecules with an optical resolution of as good as 50 nm. We show how optical antennas are fabricated into the apex of sharp tips and can be used in a near-field configuration.

A gated single-photon avalanche diode array fabricated in a conventional CMOS process for triggered systems

A bidimensional array based on single-photon avalanche diodes for triggered imaging systems is presented. The diodes are operated in the gated mode of acquisition to reduce the probability to detect noise counts interfering with photon arrival events. In addition, low reverse bias overvoltages are used to lessen the dark count rate. Experimental results demonstrate that the prototype fabricated with a standard HV-CMOS process gets rid of afterpulses and offers a reduced dark count probability by applying the proposed modes of operation. The detector exhibits a dynamic range of 15 bits with short gated"on" periods of 10ns and a reverse bias overvoltage of 1.0V.

Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

High optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cross section for the 543 nm Tb3+ emission was estimated under electrical pumping, resulting in a value of 8.2 × 10−14 cm2, which is one order of magnitude larger than one reported for Tb3+:SiO2 light emitting devices. These results demonstrate the potentiality of Tb+-implanted silicon nitride material for the development of integrated light sources compatible with Si technology.

Continuous phase shift of sinusoidal signals using injection locked oscillators

This work presents an alternative to generate continuous phase shift of sinusoidal signals based on the use of super harmonic injection locked oscillators (ILO). The proposed circuit is a second harmonic ILO with varactor diodes as tuning elements. In the locking state, by changing the varactor bias, a phase shift instead of a frequency shift is observed at the oscillator output. By combining two of these circuits, relative phases up to 90 could be achieved. Two prototypes of the circuit have been implemented and tested, a hybrid version working in the range of 200-300 MHz and a multichip module (MCM) version covering the 900¿1000 MHz band.

Relation for the nonequilibrium population of the interface states: effects on the bias dependence of the ideality factors

By an analysis of the exchange of carriers through a semiconductor junction, a general relationship for the nonequilibrium population of the interface states in Schottky barrier diodes has been derived. Based on this relationship, an analytical expression for the ideality factor valid in the whole range of applied bias has been given. This quantity exhibits two different behaviours depending on the value of the applied bias with respect to a critical voltage. This voltage, which depends on the properties of the interfacial layer, constitutes a new parameter to complete the characterization of these junctions. A simple interpretation of the different behaviours of the ideality factor has been given in terms of the nonequilibrium charging properties of interface states, which in turn explains why apparently different approaches have given rise to similar results. Finally, the relevance of our results has been considered on the determination of the density of interface states from nonideal current-voltage characteristics and in the evaluation of the effects of the interfacial layer thickness in metal-insulator-semiconductor tunnelling diodes.

Relation for the nonequilibrium population of the interface states: effects on the bias dependence of the ideality factors

By an analysis of the exchange of carriers through a semiconductor junction, a general relationship for the nonequilibrium population of the interface states in Schottky barrier diodes has been derived. Based on this relationship, an analytical expression for the ideality factor valid in the whole range of applied bias has been given. This quantity exhibits two different behaviours depending on the value of the applied bias with respect to a critical voltage. This voltage, which depends on the properties of the interfacial layer, constitutes a new parameter to complete the characterization of these junctions. A simple interpretation of the different behaviours of the ideality factor has been given in terms of the nonequilibrium charging properties of interface states, which in turn explains why apparently different approaches have given rise to similar results. Finally, the relevance of our results has been considered on the determination of the density of interface states from nonideal current-voltage characteristics and in the evaluation of the effects of the interfacial layer thickness in metal-insulator-semiconductor tunnelling diodes.

Optoelectronic properties of CuPc thin films deposited at different substrate temperatures

Structural and optical characterization of copper phthalocyanine thin film thermally deposited at different substrate temperatures was the aim of this work. The morphology of the films shows strong dependence on temperature, as can be observed by atomic force microscopy and x-ray diffraction spectroscopy, specifically in the grain size and features of the grains. The increase in the crystal phase with substrate temperature is shown by x-ray diffractometry. Optical absorption coefficient measured by photothermal deflection spectroscopy and optical transmittance reveal a weak dependence on the substrate temperature. Besides, the electro-optical response measured by the external quantum efficiency of Schottky ITO/CuPc/Al diodes shows an optimized response for samples deposited at a substrate temperature of 60 °C, in correspondence to the I-V diode characteristics.

Investigation of interaction between native and impurity defects in ZnSe

Zinc selenide is a prospective material for optoelectronics. The fabrication of ZnSe­based light-emitting diodes is hindered by complexity of p-type doping of the component materials. The interaction between native and impurity defects, the tendency of doping impurity to form associative centres with native defects and the tendency to self-compensation are the main factors impeding effective control of the value and type of conductivity. The thesis is devoted to the study of the processes of interaction between native and impurity defects in zinc selenide. It is established that the Au impurity has the most prominent amphoteric properties in ZnSe among Cu, Ag and Au impurities, as it forms a great number of both Au; donors and Auz„ acceptors. Electrical measurements show that Ag and Au ions introduced into vacant sites of the Zn sublattice form simple single-charged Agz„+ and Auzn+ states with d1° electron configuration, while Cu ions can form both single-charged Cuz„ (d1) and double-charged Cuzr`+ (d`o) centres. Amphoteric properties of Ag and Au transition metals stimulated by time are found for the first time from both electrical and luminescent measurements. A model that explains the changes in electrical and luminescent parameters by displacement of Ag ions into interstitial sites due to lattice deformation forces is proposed. Formation of an Ag;-donor impurity band in ZnSe samples doped with Ag and stored at room temperature is also studied. Thus, the properties of the doped samples are modified due to large lattice relaxation during aging. This fact should be taken into account in optoelectronic applications of doped ZnSe and related compounds.