Calcium-permeable AMPA receptors mediate long-term potentiation in interneurons in the amygdala

Fear conditioning is a paradigm that has been used as a model for emotional learning in animals'. The cellular correlate of fear conditioning is thought to be associative N-methyl-D-aspartate (NMDA) receptor-dependent synaptic plasticity within the amygdala(1-3). Here we show that glutamatergic synaptic transmission to inhibitory interneurons in the basolateral amygdala is mediated solely by alpha-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid (AMPA) receptors. In contrast to AMPA receptors at inputs to pyramidal neurons, these receptors have an inwardly rectifying current-voltage relationship, indicative of a high permeability to calcium(4 5), Tetanic stimulation of inputs to interneurons caused an immediate and sustained increase in the efficacy of these synapses. This potentiation required a rise in postsynaptic calcium, but was independent of NMDA receptor activation. The potentiation of excitatory inputs to interneurons was reflected as an increase in the amplitude of the GABAA-mediated inhibitory synaptic current in pyramidal neurons. These results demonstrate that excitatory synapses onto interneurons within a fear conditioning circuit show NMDA-receptor independent long-term potentiation. This plasticity might underlie the increased synchronization of activity between neurons in the basolateral amygdala after fear conditioning(6).

Excitatory synaptic transmission in the lateral and central amygdala

The amygdala plays a major role in the acquisition and expression of fear conditioning. NMDA receptor-dependent synaptic plasticity within the basolateral amygdala has been proposed to underlie the acquisition and possible storage of fear memories. Here the properties of fast glutamatergic transmission in the lateral and central nuclei of the amygdala are presented. In the lateral amygdala, two types of neurons, interneurons and projection neurons, could be distinguished by their different firing properties. Glutamatergic inputs to interneurons activated AMPA receptors with inwardly rectifying current-voltage relations (I-Vs), whereas inputs to projection neurons activated receptors that had linear I-Vs, indicating that receptors on interneurons lack GluR2 subunits. Inputs to projection neurons formed dual component synapses with both AMPA and NMDA components, whereas at inputs to interneurons, the contribution of NMDA receptors was very small. Neurons in the central amygdala received dual component glutamatergic inputs that activated AMPA receptors with linear I-Vs. NMDA receptor-mediated EPSCs had slow decay time constants in the central nucleus. Application of NR2B selective blockers ifenprodil or CP-101,606 blocked NMDA EPSCs by 70% in the central nucleus, but only by 30% in the lateral nucleus. These data show that the distribution of glutamatergic receptors on amygdalar neurons is not uniform. In the lateral amygdala, interneurons and pyramidal neurons express AMPA receptors with different subunit compositions. Synapses in the central nucleus activate NMDA receptors that contain NR1 and NR2B subunits, whereas synapses in the lateral nucleus contain receptors with both NR2A and NR2B subunits.

Simulation of interface states effect on the scanning capacitance microscopy measurement of p-n junctions

A two-dimensional numerical simulation model of interface states in scanning capacitance microscopy (SCM) measurements of p-n junctions is presented-In the model, amphoteric interface states with two transition energies in the Si band gap are represented as fixed charges to account for their behavior in SCM measurements. The interface states are shown to cause a stretch-out-and a parallel shift of the capacitance-voltage characteristics in the depletion. and neutral regions of p-n junctions, respectively. This explains the discrepancy between - the SCM measurement and simulation near p-n junctions, and thus modeling interface states is crucial for SCM dopant profiling of p-n junctions. (C) 2002 American Institute of Physics.

Tuning the spectral distribution of p-i-n a-SiC : H devices for colour detection

ZnO:Al/p (SiC:H)/i (Si:H)/n (SiC:H) large area image and colour sensor are analysed. Carrier transport and collection efficiency are investigated from dark and illuminated current-voltage (I-V) dependence and spectral response measurements under different optical and electrical bias conditions. Results show that the carrier collection depends on the optical bias and on the applied voltage. By changing the electrical bias around the open circuit voltage it is possible to filter the absorption at a given wavelength and so to tune the spectral sensitivity of the device. Transport and optical modelling give insight into the internal physical process and explain the bias control of the spectral response and the image and colour sensing properties of the devices.

Membrane selectivity versus sensor response in hydrogenated amorphous silicon CHEMFETs using a semi-empirical model

Toxic amides, such as acrylamide, are potentially harmful to Human health, so there is great interest in the fabrication of compact and economical devices to measure their concentration in food products and effluents. The CHEmically Modified Field Effect Transistor (CHEMFET) based onamorphous silicon technology is a candidate for this type of application due to its low fabrication cost. In this article we have used a semi-empirical modelof the device to predict its performance in a solution of interfering ions. The actual semiconductor unit of the sensor was fabricated by the PECVD technique in the top gate configuration. The CHEMFET simulation was performed based on the experimental current voltage curves of the semiconductor unit and on an empirical model of the polymeric membrane. Results presented here are useful for selection and design of CHEMFET membranes and provide an idea of the limitations of the amorphous CHEMFET device. In addition to the economical advantage, the small size of this prototype means it is appropriate for in situ operation and integration in a sensor array.

Personality changes in patients with beginning Alzheimer disease.

Objective: To investigate personality traits in patients with Alzheimer disease, compared with mentally healthy control subjects. We compared both current personality characteristics using structured interviews as well as current and previous personality traits as assessed by proxies. Method: Fifty-four patients with mild Alzheimer disease and 64 control subjects described their personality traits using the Structured Interview for the Five-Factor Model. Family members filled in the Revised NEO Personality Inventory, Form R, to evaluate their proxies' current personality traits, compared with 5 years before the estimated beginning of Alzheimer disease or 5 years before the control subjects. Results: After controlling for age, the Alzheimer disease group presented significantly higher scores than normal control subjects on current neuroticism, and significantly lower scores on current extraversion, openness, and conscientiousness, while no significant difference was observed on agreeableness. A similar profile, though less accentuated, was observed when considering personality traits as the patients' proxies remembered them. Diachronic personality assessment showed again significant differences between the 2 groups for the same 4 domains, with important personality changes only for the Alzheimer disease group. Conclusions: Group comparison and retrospective personality evaluation are convergent. Significant personality changes follow a specific trend in patients with Alzheimer disease and contrast with the stability generally observed in mentally healthy people in their personality profile throughout their lives. Whether or not the personality assessment 5 years before the current status corresponds to an early sign of Alzheimer disease or real premorbid personality differences in people who later develop Alzheimer disease requires longitudinal studies.

Personality changes in patients with beginning Alzheimer disease

Objective: To investigate personality traits in patients with Alzheimer disease, compared with mentally healthy control subjects. We compared both current personality characteristics using structured interviews as well as current and previous personality traits as assessed by proxies.Method: Fifty-four patients with mild Alzheimer disease and 64 control subjects described their personality traits using the Structured Interview for the Five-Factor Model. Family members filled in the Revised NEO Personality Inventory, Form R, to evaluate their proxies' current personality traits, compared with 5 years before the estimated beginning of Alzheimer disease or 5 years before the control subjects.Results: After controlling for age, the Alzheimer disease group presented significantly higher scores than normal control subjects on current neuroticism, and significantly lower scores on current extraversion, openness, and conscientiousness, while no significant difference was observed on agreeableness. A similar profile, though less accentuated, was observed when considering personality traits as the patients' proxies remembered them. Diachronic personality assessment showed again significant differences between the 2 groups for the same 4 domains, with important personality changes only for the Alzheimer disease group.Conclusions: Group comparison and retrospective personality evaluation are convergent. Significant personality changes follow a specific trend in patients with Alzheimer disease and contrast with the stability generally observed in mentally healthy people in their personality profile throughout their lives. Whether or not the personality assessment 5 years before the current status corresponds to an early sign of Alzheimer disease or real premorbid personality differences in people who later develop Alzheimer disease requires longitudinal studies.

Influence of premetallization surface treatment on the formation of Schottky Au-nGaN contacts

The influence of premetallization surface preparation on the structural, chemical, and electrical properties of Au-nGaN interfaces has been investigated by x-ray photoemission spectroscopy (XPS), current-voltage measurement (I-V) and cross-section transmission electron microscopy (TEM). XPS analysis showed that the three GaN substrate treatments investigated i.e., ex situ hydrofluoric acid etch, in situ anneal in ultrahigh-vacuum (UHV), and in situ Ga reflux cleaning in UHV result in surfaces increasingly free of oxygen contamination. XPS and TEM characterization of Au-nGaN formed after the three premetallization surface treatments show that HF etching and UHV annealing produce abrupt, well-defined interfaces. Conversely, GaN substrate cleaning in a Ga flux results in Au/GaN intermixing. I-V characterization of Au¿nGaN contacts yields a Schottky barrier height of 1.25 eV with a very low-ideality factor and very good contact uniformity for the premetallization UHV anneal, while the Ga reflux cleaning results in a much lower barrier (0.85 eV), with poor ideality and uniformity. I-V and XPS results suggest a high density of acceptor states at the surface, which is further enhanced by UHV annealing. These results are discussed in the context of current models of Schottky barrier formation.

Influência de diferentes solventes utilizados na deposição de filme de poli(9-vinilcarbazol) em dispositivos OLEDs

This work studies the influence of the film deposition process on light emission performance and on threshold voltage of OLEDs, with architecture glass/ITO/PEDOT:PSS/PVK/Alq3/Al. The commercial PVK was dissolved in different solvents such as: chloroform, tetrahydrofuran, 1,2,4-trichlorobenzene and trimethylpentane. OLEDs were characterized by current-voltage and revealed a significant influence of the solvents, although all devices emitted green electroluminescence. A difference in threshold voltage up to 10 V was observed among OLEDs prepared from different solvents. The 1,2,4-trichlorobenzene showed best performance, presenting lowest treshold voltage (≈ 6 V), followed by tetrahydrofuran (≈ 8 V), trimethylpentane (≈ 14 V) and chloroform (≈ 16 V).

Memristive Computing

Memristive computing refers to the utilization of the memristor, the fourth fundamental passive circuit element, in computational tasks. The existence of the memristor was theoretically predicted in 1971 by Leon O. Chua, but experimentally validated only in 2008 by HP Labs. A memristor is essentially a nonvolatile nanoscale programmable resistor — indeed, memory resistor — whose resistance, or memristance to be precise, is changed by applying a voltage across, or current through, the device. Memristive computing is a new area of research, and many of its fundamental questions still remain open. For example, it is yet unclear which applications would benefit the most from the inherent nonlinear dynamics of memristors. In any case, these dynamics should be exploited to allow memristors to perform computation in a natural way instead of attempting to emulate existing technologies such as CMOS logic. Examples of such methods of computation presented in this thesis are memristive stateful logic operations, memristive multiplication based on the translinear principle, and the exploitation of nonlinear dynamics to construct chaotic memristive circuits. This thesis considers memristive computing at various levels of abstraction. The first part of the thesis analyses the physical properties and the current-voltage behaviour of a single device. The middle part presents memristor programming methods, and describes microcircuits for logic and analog operations. The final chapters discuss memristive computing in largescale applications. In particular, cellular neural networks, and associative memory architectures are proposed as applications that significantly benefit from memristive implementation. The work presents several new results on memristor modeling and programming, memristive logic, analog arithmetic operations on memristors, and applications of memristors. The main conclusion of this thesis is that memristive computing will be advantageous in large-scale, highly parallel mixed-mode processing architectures. This can be justified by the following two arguments. First, since processing can be performed directly within memristive memory architectures, the required circuitry, processing time, and possibly also power consumption can be reduced compared to a conventional CMOS implementation. Second, intrachip communication can be naturally implemented by a memristive crossbar structure.

Applications and Benefits of Adaptive Pulsed GMAW

In ship and offshore terminal construction, welded cross sections are thick and the number of welds very high. Consequently, there are two aspects of great importance; cost and heat input. Reduction in the welding operation time decreases the costs of the work force and avoids excessive heat, preventing distortion and other weld defects. The need to increase productivity while using a single wire in the GMAW process has led to the use of a high current and voltage to improve the melting rate. Unfortunately, this also increases the heat input. Innovative GMAW processes, mostly implemented for sheet plate sections, have shown significant reduction in heat input (Q), low distortion and increase in welding speed. The aim of this study is to investigate adaptive pulsed GMAW processes and assess relevant applications in the high power range, considering possible benefits when welding thicker sections and high yield strength steel. The study experimentally tests the usability of adaptive welding processes and evaluates their effects on weld properties, penetration and shapes of the weld bead.The study first briefly reviews adaptive GMAW to evaluate different approaches and their applications and to identify benefits in adaptive pulsed. Experiments are then performed using Synergic Pulsed GMAW, WiseFusionTM and Synergic GMAW processes to weld a T-joint in a horizontal position (PB). The air gap between the parts ranges from 0 to 2.5 mm. The base materials are structural steel grade S355MC and filler material G3Si1. The experiment investigates heat input, mechanical properties and microstructure of the welded joint. Analysis of the literature reveals that different approaches have been suggested using advanced digital power sources with accurate waveform, current, voltage, and feedback control. In addition, studies have clearly indicated the efficiency of lower energy welding processes. Interest in the high power range is growing and a number of different approaches have been suggested. The welding experiments in this study reveal a significant reduction of heat input and a weld microstructure with the presence of acicular ferrite (AF) beneficial for resistance to crack propagation. The WiseFusion bead had higher dilution, due to the weld bead shape, and low defects. Adaptive pulse GMAW processes can be a favoured choice when welding structures with many welded joints. The total heat reduction mitigates residual stresses and the bead shape allows a higher amperage limit. The stability of the arc during the process is virtually spatter free and allows an increase in welding speed.

Taajuusmuuttaja aktiivisesti säädetyn magneettilaakerin virtalähteenä

Työssä tutkitaan mahdollisuutta hyödyntää sähkömoottorien nopeudensäätöön suunniteltuja kaupallisia taajuusmuuttajia osana aktiivisesti säädetyn magneettilaakeroinnin säätöjärjestelmää. Magneettilaakerijärjestelmän ohjaamiseksi tarvitaan vahvistin, jonka tehtävänä on muuntaa paikkasäätöjärjestelmältä tuleva ohjearvo virraksi, jännitteeksi tai magneettivuoksi voiman tuottamiseksi laakerikäämityksellä. Nykyaikaiset modernit taajuusmuuttajat mahdollistavat säätöalgoritmien suorittamisen sekä liitynnän muuhun automaatiojärjestelmään kenttäväylien kautta. Tämän järjestelmäintegraation myötä olisi mahdollista rakentaa modulaarinen säätöjärjestelmä hyödyntäen luotettavaksi todettuja teollisuusautomaatiotuotteita vain muutamalla itse magneettilaakerijärjestelmään liittyvällä tuotteella. Haluttaessa hyödyntää kolmivaiheinen taajuusmuuttaja mahdollisimman tehokkaasti magneettilaakerin teholähteenä tulee laakerikäämityksien kytkeytymistä taajuusmuuttajaan tarkastella tarkemmin. Kirjallisuustutkimuksessa keskitytään taajuusmuuttajan tehokytkimien muodostaman vaihtosuuntaajan eri rakennevaihtoehtojen sekä virtasäädön dynaamisten ominaisuuksien tarkasteluun. Soveltuvien rakennevaihtoehtojen sekä virtasäädön suorituskyky todennetaan simuloinnein ja lopuksi todellisella koelaitteistolla. Magneettilaakeroinnilla varustetun sähkökoneen roottorin onnistunut leijuttaminen viiden vapausasteen suhteen paikkasäädettynä sekä mittauksien tulokset osoittavat, ettei taajuusmuuttajien järjestelmäarkkitehtuurista löydy merkittäviä esteitä muuttajien hyödyntämiseksi magneettilaakerisovelluksissa.

Methodology for Photovoltaic Modules Characterization and Shading Effects Analysis

This work describes the methodology, basic procedures and instrumental employed by the Solar Energy Laboratory at Universidade Federal do Rio Grande do Sul for the determination of current-voltage characteristic curves of photovoltaic modules. According to this methodology, I-V characteristic curves were acquired for several modules under diverse conditions. The main electrical parameters were determined and the temperature and irradiance influence on photovoltaic modules performance was quantified. It was observed that most of the tested modules presented output power values considerably lower than those specified by the manufacturers. The described hardware allows the testing of modules with open-circuit voltage up to 50 V and short-circuit current up to 8 A.

Analyse des processus de dérive lors de la gravure profonde du silicium dans des plasmas SF6 et C4F8

L’objectif de ce mémoire de maîtrise est de développer des outils de diagnostics non-invasifs et de caractériser in-situ les dérives de procédé dans un réacteur industriel utilisé en production pour la gravure profonde du silicium par le procédé Bosch. Ce dernier repose sur l’alternance d’un plasma de SF6 pour la gravure isotrope du Si et d’un plasma de C4F8 pour la passivation des parois dans l’optique d’obtenir des tranchées profondes et étroites. Dans un premier temps, nous avons installé une sonde courant-tension sur la ligne de transmission du signal rf au porte-substrat pour l’étude de son impédance caractéristique et un spectromètre optique pour l’étude de l’émission optique du plasma. Nos travaux ont montré que l’évolution temporelle de l’impédance constitue un excellent moyen pour identifier des changements dans la dynamique du procédé, notamment une gravure complète de la photorésine. De plus, à partir des spectres d’émission, nous avons pu montrer que des produits carbonés sont libérés du substrat et des parois lors de l’alternance passivation/gravure et que ceux-ci modifient considérablement la concentration de fluor atomique dans le plasma. Dans un second temps, nous avons développé un réacteur à « substrat-tournant » pour l’analyse in-situ des interactions plasma-parois dans le procédé Bosch. Nos travaux sur ce réacteur visaient à caractériser par spectrométrie de masse l’évolution temporelle des populations de neutres réactifs et d’ions positifs. Dans les conditions opératoires étudiées, le SF6 se dissocie à près de 45% alors que le degré de dissociation du C4F8 atteint 70%. Le SF6 est avant tout dissocié en F et SF3 et l’ion dominant est le SF3+ alors que le C4F8 est fragmenté en CF, CF3 et CF4 et nous mesurons plusieurs ions significatifs. Dans les deux cas, la chaîne de dissociation demeure loin d’être complète. Nous avons noté une désorption importante des parois de CF4 lors du passage du cycle de passivation au cycle de gravure. Un modèle d’interactions plasmas-parois est proposé pour expliquer cette observation.

Photoconductivity in molecularly doped poly (methylmethacrylate) sandwich cells

Poly(methyl)methacrylate was made photoconducting by molecular doping and the photoconductivity was investigated using modulated photocurrent technique . Low-temperature current-voltage measurements showed that the transport mechanism was thermally activated hopping. An experimental investigation of the photoconductivity action spectrum along with theoretical calculation enabled an estimation of the diffusion coefficient of the material. The presence of states with a distribution of lifetimes could be understood from the frequency response of the photocurrent . The photocurrent was due to the field-assisted dissociation of these states