974 resultados para Crystal orientation


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We investigate the characteristics of Gaussian beams reflected and transmitted from a uniaxial crystal slab with an arbitrary orientation of its optical axis. The formulas of the total electric and magnetic fields inside and outside the slab are derived by use of Maxwell's equations and by matching the boundary conditions at the interfaces. Numerical simulations are presented and the field values as well as the power densities are computed. Negative refractions are demonstrated when the beam is transmitted through a uniaxial crystal slab. Beam splitting of the reflected beam is observed and is explained by the resonant transmission for plane waves. Dependences of the lateral shift on the incident angle and beam width are discussed. Negative and positive lateral shifts are observed due to the spatial anisotropic properties.

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Periodic nanostructures are observed on the surface of ZnSe after irradiation by a focused beam of a femtosecond Ti:sapphire laser, which are aligned perpendicular to the laser polarization direction. The period of self-organized grating structures is about 160 nm. The phenomenon is interpreted in terms of interference between the incident light field and the surface scattered wave of 800-nm laser pulses. With the laser polarization parallel to the moving direction we produce long-range Bragg-like gratings by slowly moving the crystal under a fixed laser focus. The nanograting orientation is adjusted by laser polarization and the accumulation effect.

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I. Trimesic acid (1, 3, 5-benzenetricarboxylic acid) crystallizes with a monoclinic unit cell of dimensions a = 26.52 A, b = 16.42 A, c = 26.55 A, and β = 91.53° with 48 molecules /unit cell. Extinctions indicated a space group of Cc or C2/c; a satisfactory structure was obtained in the latter with 6 molecules/asymmetric unit - C54O36H36 with a formula weight of 1261 g. Of approximately 12,000 independent reflections within the CuKα sphere, intensities of 11,563 were recorded visually from equi-inclination Weissenberg photographs.

The structure was solved by packing considerations aided by molecular transforms and two- and three-dimensional Patterson functions. Hydrogen positions were found on difference maps. A total of 978 parameters were refined by least squares; these included hydrogen parameters and anisotropic temperature factors for the C and O atoms. The final R factor was 0.0675; the final "goodness of fit" was 1.49. All calculations were carried out on the Caltech IBM 7040-7094 computer using the CRYRM Crystallographic Computing System.

The six independent molecules fall into two groups of three nearly parallel molecules. All molecules are connected by carboxylto- carboxyl hydrogen bond pairs to form a continuous array of sixmolecule rings with a chicken-wire appearance. These arrays bend to assume two orientations, forming pleated sheets. Arrays in different orientations interpenetrate - three molecules in one orientation passing through the holes of three parallel arrays in the alternate orientation - to produce a completely interlocking network. One third of the carboxyl hydrogen atoms were found to be disordered.

II. Optical transforms as related to x-ray diffraction patterns are discussed with reference to the theory of Fraunhofer diffraction.

The use of a systems approach in crystallographic computing is discussed with special emphasis on the way in which this has been done at the California Institute of Technology.

An efficient manner of calculating Fourier and Patterson maps on a digital computer is presented. Expressions for the calculation of to-scale maps for standard sections and for general-plane sections are developed; space-group-specific expressions in a form suitable for computers are given for all space groups except the hexagonal ones.

Expressions for the calculation of settings for an Eulerian-cradle diffractometer are developed for both the general triclinic case and the orthogonal case.

Photographic materials on pp. 4, 6, 10, and 20 are essential and will not reproduce clearly on Xerox copies. Photographic copies should be ordered.

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The induced magnetic uniaxial anisotropy of Ni-Fe alloy films has been shown to be related to the crystal structure of the film. By use of electron diffraction, the crystal structure or vacuum-deposited films was determined over the composition range 5% to 85% Ni, with substrate temperature during deposition at various temperatures in the range 25° to 500° C. The phase diagram determined in this way has boundaries which are in fair agreement with the equilibrium boundaries for bulk material above 400°C. The (α+ ɤ) mixture phase disappears below 100°C.

The measurement of uniaxial anisotropy field for 25% Ni-Fe alloy films deposited at temperatures in the range -80°C to 375°C has been carried out. Comparison of the crystal structure phase diagram with the present data and those published by Wilts indicates that the anisotropy is strongly sensitive to crystal structure. Others have proposed pair ordering as an important source of anisotropy because of an apparent peak in the anisotropy energy at about 50% Ni composition. The present work shows no such peak, and leads to the conclusion that pair ordering cannot be a dominant contributor.

Width of the 180° domain wall in 76% Ni-Fe alloy films as a function of film thickness up to 1800 Å was measured using the defocused mode of Lorentz microscopy. For the thinner films, the measured wall widths are in good agreement with earlier data obtained by Fuchs. For films thicker than 800 Å, the wall width increases with film thickness to about 9000 Å at 1800 Å film thickness. Similar measurements for polycrystalline Co films with thickness from 200 to 1500 Å have been made. The wall width increases from 3000 Å at 400 Å film thickness to about 6000 Å at 1500 Å film thickness. The wall widths for Ni-Fe and Co films are much greater than predicted by present theories. The validity of the classical determination of wall width is discussed, and the comparison of the present data with theoretical results is given.

Finally, an experimental study of ripple by Lorentz microscopy in Ni-Fe alloy films has been carried out. The following should be noted: (1) the only practical way to determine experimentally a meaningful wavelength is to find a well-defined ripple periodicity by visual inspection of a photomicrograph. (2) The average wavelength is of the order of 1µ. This value is in reasonable agreement with the main wavelength predicted by the theories developed by others. The dependence of wavelength on substrate deposition temperature, alloy composition and the external magnetic field has been also studied and the results are compared with theoretical predictions. (3) The experimental fact that the ripple structure could not be observed in completely epitaxial films gives confirmation that the ripple results from the randomness of crystallite orientation. Furthermore, the experimental observation that the ripple disappeared in the range 71 and 75% Ni supports the theory that the ripple amplitude is directly dependent on the crystalline anisotropy. An attempt to experimentally determine the order of magnitude of the ripple angle was carried out. The measured angle was about 0.02 rad. The discrepancy between the experimental data and the theoretical prediction is serious. The accurate experimental determination of ripple angle is an unsolved problem.

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Protein adsorption plays a crucial role in biomaterial surface science as it is directly linked to the biocompatibility of artificial biomaterial devices. Here, elucidation of protein adsorption mechanism is effected using dual polarization interferometry and a quartz crystal microbalance to characterize lysozyme layer properties on a silica surface at different coverage values. Lysozyme is observed to adsorb from sparse monolayer to multilayer coverage. At low coverage an irreversibly adsorbed layer is formed with slight deformation consistent with side-on orientation. At higher coverage values dynamic re-orientation effects are observed which lead to monolayer surface coverages of 2-3 ng/mm² corresponding to edge-on or/and end-on orientations. These monolayer thickness values ranged between 3 and 4.5 nm with a protein density value of 0.60 g/mL and with 50 wt% solvent mass. Further increase of coverage results formation of a multilayer structure. Using the hydration content and other physical layer properties a tentative model lysozyme adsorption is proposed.

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Protein adsorption plays a crucial role in biomaterial surface science as it is directly linked to the biocompatibility of artificial biomaterial devices. Here, elucidation of protein adsorption mechanism is effected using dual polarization interferometry and a quartz crystal microbalance to characterize lysozyme layer properties on a silica surface at different coverage values. Lysozyme is observed to adsorb from sparse monolayer to multilayer coverage. At low coverage an irreversibly adsorbed layer is formed with slight deformation consistent with side-on orientation. At higher coverage values dynamic re-orientation effects are observed which lead to monolayer surface coverages of 2-3 ng/mm2 corresponding to edge-on or/and end-on orientations. These monolayer thickness values ranged between 3 and 4.5 nm with a protein density value of 0.60 g/mL and with 50 wt% solvent mass. Further increase of coverage results formation of a multilayer structure. Using the hydration content and other physical layer properties a tentative model lysozyme adsorption is proposed. © 2012 Elsevier Ltd.

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We demonstrate modulations of electrical conductance and hysteresis behavior in ZnO nanowire transistors via electrically polarized switching of ferroelectric liquid crystal (FLC). After coating a nanowire channel in the transistors with FLCs, we observed large increases in channel conductance and hysteresis width, and a strong dependence of hysteresis loops on the polarization states associated with the orientation of electric dipole moments along the direction of the gate electric field. Furthermore, the reversible switching and retention characteristics provide the feasibility of creating a hybrid system with switch and memory functions. © 2013 American Institute of Physics.

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Electron and hole conducting 10-nm-wide polymer morphologies hold great promise for organic electro-optical devices such as solar cells and light emitting diodes. The self-assembly of block-copolymers (BCPs) is often viewed as an efficient way to generate such materials. Here, a functional block copolymer that contains perylene bismide (PBI) side chains which can crystallize via π-π stacking to form an electron conducting microphase is patterned harnessing hierarchical electrohydrodynamic lithography (HEHL). HEHL film destabilization creates a hierarchical structure with three distinct length scales: (1) micrometer-sized polymer pillars, containing (2) a 10-nm BCP microphase morphology that is aligned perpendicular to the substrate surface and (3) on a molecular length scale (0.35-3 nm) PBI π-π-stacks traverse the HEHL-generated plugs in a continuous fashion. The good control over BCP and PBI alignment inside the generated vertical microstructures gives rise to liquid-crystal-like optical dichroism of the HEHL patterned films, and improves the electron conductivity across the film by 3 orders of magnitude. © 2013 American Chemical Society.

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The ternary Zn1-xCdxO (0less than or equal toxless than or equal to0.6) alloying films with highly c-axis orientation have been deposited on Si(111) substrates by direct current reactive magnetron sputtering method. X-ray diffraction measurement indicates that the wurtzite-type structure of ZnO can be stabilized up to nominal Cd content x similar to 0.6 without cubic CdO phase separation. The lattice parameter c of Zn1-xCdxO increases almost linearly from 5.229 Angstrom (x = 0) to 5.247 Angstrom (x = 0.6), indicating that Cd substitution takes place on the Zn lattice sites. The photoluminescence spectra of the Zn1-xCdxO thin films measured at 12 K display a substantial red shift (similar to0.3 eV) in the near-band-edges (NBEs) emission of ZnO: from 3.39 eV of ZnO to 3.00 eV of Zn0.4Cd0.6O. The direct modulation of band gap caused by Zn/Cd substitution is responsible for the red shift effect in NBE emission of ZnO. (C) 2003 Elsevier Science B.V. All rights reserved.

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Based on experimental results and theoretical analysis effects of the crystal structure on the optical and electrical properties of pyrite FeS2 films produced by thermally sulfurizing iron films at various temperatures have been systematically studied. The results indicate that the crystal structure and some related factors, such as the crystallization and the stoichiometry, remarkably influence the optical and electrical performances of the pyrite films. It is also shown that the preferred orientation of the crystal grain plays a major role in determining the crystal structure and the optical and electrical properties of the pyrite FeS2 films. Also we find that it is the crystal grains, rather than the particles that exercise a decisive influence on the electrical performance of pyrite films. (C) 2003 Elsevier Science B.V. All rights reserved.

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Cubic GaN/GaAs(0 0 1) epilayers and hexagonal inclusions are characterized by X-ray diffraction (XRD), Photoluminescence (PL), Raman spectroscopy, and transmission electron microscopy (TEM). The X-ray {0 0 0 2} and (1 0 (1) over bar 0) pole figures show that the orientation relationships between cubic GaN and hexagonal inclusions are (1 1 1)//(0 0 0 1), <1 1 2 >//<1 0 (1) over bar 0 >. The distribution of hexagonal inclusions mainly results from the interfacial bonding disorder in the grain boundaries parallel to hexagonal <0 0 0 1 > directions and the lattice mismatch in <0 0 0 1 > directions on {1 0 (1) over bar 0} planes. In order to reduce the energy increase in cubic epilayers, hexagonal lamellas with smaller sizes in <0 0 0 1 > directions often nucleate inside the buffer layer or near the interface between the buffer layer and the epitaxial layer, and penetrate through the whole epitaxial layer with this orientation relationship. (C) 2001 Elsevier Science B.V. All rights reserved.

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Strained InAs nanostructures have been grown by solid-source molecular beam epitaxy in In0.52Al0.48As matrix on different InP substrate surfaces ((0 0 1) and (1 1 n)A/B (n = 1 - 5)). The morphology of the nanostructures was characterized using atomic force microscopy (AFM). The AFM results reveal interesting differences in the size, shape, and alignment of the nanostructures between different oriented surfaces. It was found that some faceted nanostructures tend to form on A-type surfaces, the shape and the alignment of these nanostructures show clear dependence on the substrate orientation. Samples grown on (0 0 1) and B-type surfaces showed preferentially dense round dots. Dots formed on (1 1 3)B, (1 1 3)B and (1 1 5)B surfaces have a higher dot density and size homogeneity, which shows a potential for the production of high-quality and customized self-assembled quantum dots for photonics applications. (C) 2000 Elsevier Science B.V. All rights reserved.

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Cubic GaN was grown on GaAs(100) by low pressure metal organic chemical vapor deposition (MOCVD). X-ray diffraction, scanning electron microscope (SEM) and photoluminescence (PL) spectra were performed to characterize the quality of the GaN film. The PL spectra of cubic GaN thin films being thicker than 1.5 mu m were reported. Triple-crystal diffraction to analyze orientation distributions and strain of the thin films was also demonstrated.

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Quantum wires were formed in the 6-period InAs/In0.52Al0.48As structure on InP(0 0 1) grown by molecular beam epitaxy. The structure was characterized with transmission electron microscopy. It was found that the lateral periodic compositional modulation in the QWR array was in the [1 (1) over bar 0] direction and layer-ordered along the specific orientation deviating from the [0 0 1] growth direction by about 30 degrees. This deviating angle is consistent with the calculation of the distribution of elastic distortion around quantum wires in the structure using the finite element technique. (C) 1999 Elsevier Science B.V. All rights reserved.

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Cubic GaN/GaAs(0 0 1) epilayers and hexagonal inclusions are characterized by X-ray diffraction (XRD), Photoluminescence (PL), Raman spectroscopy, and transmission electron microscopy (TEM). The X-ray {0 0 0 2} and (1 0 (1) over bar 0) pole figures show that the orientation relationships between cubic GaN and hexagonal inclusions are (1 1 1)//(0 0 0 1), <1 1 2 >//<1 0 (1) over bar 0 >. The distribution of hexagonal inclusions mainly results from the interfacial bonding disorder in the grain boundaries parallel to hexagonal <0 0 0 1 > directions and the lattice mismatch in <0 0 0 1 > directions on {1 0 (1) over bar 0} planes. In order to reduce the energy increase in cubic epilayers, hexagonal lamellas with smaller sizes in <0 0 0 1 > directions often nucleate inside the buffer layer or near the interface between the buffer layer and the epitaxial layer, and penetrate through the whole epitaxial layer with this orientation relationship. (C) 2001 Elsevier Science B.V. All rights reserved.