CONTROLLED FORMATION AND CHARACTERISTICS OF INTERFACES IN GAAS/ALGAAS SINGLE QUANTUM-WELLS

The influence of heterostructure quality on transport and optical properties of GaAs/AlGaAs single quantum wells with different qualities was studied. In a conventional sample-A, the transport scattering time and the quantum scattering time are small and close to each other. The interface roughness scattering is a dominant scattering mechanism. From comparison between theory and experiment, interface roughness with fluctuation height 2.5 Angstrom and the lateral size of 50-70 Angstrom were estimated. For samples introducing superlattices instead of AlGaAs layers or by utilizing growth interruption, both the transport and PL measurements showed that interfaces were rather smooth in the samples. The two scattering times are much longer. The interface roughness scattering is relegated to an unimportant position. Results demonstrated that it is important to control the formation of heterostructures in order to improve the interface quality.

Numerical Analysis of Steady Current and Temper ature Distributions and Characteristics of Transverse Mode in VCSEL

国家自然科学基金

Effect of gamma-ray radiation on physiological, morphological characters and chromosome aberrations of minitubers in Solanum tuberosum L.

Purpose: To investigate the effects of gamma-ray radiation on the physiological, morphological characters and chromosome aberrations of minitubers. Materials and methods: Minitubers of one potato cultivar, 'Shepody', were irradiated with 8 doses of gamma-rays (0, 10, 20, 30, 40, 50, 60, 70 and 80 Gy [Gray]) to investigate the effects of radiation on emergence ability, plant height and root length, morphological variations, chromosome aberrations, M-1 (first generation mutants) tuber number and size of minituber plants. Results: Compared with the non-irradiated controls, the whole period of emergence was prolonged by 10-15 days for minitubers treated with gamma-ray radiation, but low doses of radiation (10, 20 and 30 Gy) promoted the emergence percentage of minitubers. With an increase in radiation dose, the emergence percentage, plant height and root length of minituber plants were significantly inhibited at 40 and 50 Gy. No emergence occurred at 60 Gy and higher doses. After radiation, a series of morphological variations and chromosome aberrations appeared in minituber plants. Radiation with 20 Gy promoted tuber formation, and the average number and diameter of M-1 tubers per plant were significantly increased over the control by 71% and 34%, respectively. Conclusion: Low doses of radiation (10-30 Gy) might be used as a valuable parameter to study the improvement of minitubers by gamma-ray radiation treatment.

Urban functional structure characteristics and transformation in China

The paper analyzes urban functional structure characteristics of Chinese cities in 1996 using the Nelson method. The manufacturing employment percentage is much higher in metropolitan areas but is decreasing from 1989 to 1996. On the other hand, the weight of science, education, culture, hygiene, finance, insurance and real estate increases. The employment structure changes dramatically. Although the urbanization level of China is lower than that of the USA in 1955, the frequency distribution curve of urban functions is similar. The construction, transportation, commerce, finance, insurance, real estate, science, education, culture, hygiene and administration curves are normal. The mining employment converges on minor cities and the distribution is not normal. The urban function has changed with urban scale. The bigger the cities are, the smaller the manufacture, mining and construction employment weights, and the larger are the science, education, finance, insurance, real estate and administration weights. Commerce and transportation are distributed evenly and the difference is less. From the comparison in three zones of China, the employment percentage of manufacture, finance, insurance and real estate is higher in eastern coastal areas, while the employment percentage of science, education, administration is higher in western areas. (C) 2002 Elsevier Science Ltd. All rights reserved.

Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum

Negative differential resistance (NDR) and memory phenomenon have been realized in current-voltage (I-V) characteristics of indium tin oxide/tris(8-hydroxyquinoline) aluminum/aluminum devices. The I-V curves have been divided into three operational regions that are associated with different working regimes of the devices: (i) bistable region, (ii) NDR region, and (iii) monotonic region. The bistable region disappeared after a couple of voltage sweeps from zero to a positive voltage. The bistable nature can be reinstated by applying a suitable negative voltage.