Changes in mass balance of South Cascade Glacier, North Cascades, 1959 to 1994

EXTRACT (SEE PDF FOR FULL ABSTRACT): Annual, winter, and summer mass balance measurements at South Cascade Glacier in the North Cascade Mountains of Washington State constitute a continuous time series 36 years long, from 1959 to 1994. ... The long-term trends at South Cascade Glacier are decreased winter accumulation and increased summer ablation, neither of which is conducive to glacier growth, so the trend in the Pacific Northwest is clearly away from an ice-age type of climate at the current time. The data also demonstrate that a glaciologically significant long-term change in snow precipitation can occur rapidly, in as short an interval as 1 year, much more rapidly than changes in temperature.

A comparison of power losses for small (< 1 kW) induction motor drives adopting squarewave and sinusoidal PWM excitation

In this paper the influence of the form of motor excitation on the performance of a small (< 1 kW) induction motor drive is studied. Two forms of excitation, namely sine waves generated by pulse width modulation and simple square wave are explored. Sine wave excitation gives lower motor losses but increases inverter losses. Conversely, square wave excitation increases motor losses but decreases inverter losses. Losses have been measured directly by calorimetric means or, in the case of the inverter, predicted by a Pspice model that has been verified by calorimetric methods. The work shows that overall, the use of square wave excitation leads to a more efficient drive. © 2004 The Institution of Electrical Engineers.

Transient thermal analysis of power devices based on Fourier-series thermal model

A new thermal model based on Fourier series expansion method has been presented for dynamic thermal analysis on power devices. The thermal model based on the Fourier series method has been programmed in MATLAB SIMULINK and integrated with a physics-based electrical model previously reported. The model was verified for accuracy using a two-dimensional Fourier model and a two-dimensional finite difference model for comparison. To validate this thermal model, experiments using a 600V 50A IGBT module switching an inductive load, has been completed under high frequency operation. The result of the thermal measurement shows an excellent match with the simulated temperature variations and temperature time-response within the power module. ©2008 IEEE.

Transient electrothermal simulation of power semiconductor devices

In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature.© 2010 IEEE.

Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications

A multi-finger structure power SiGe HBT device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltage reaches 9V with a collector doping concentration of 1 × 10^17cm^-3 and a collector thickness of 400nm. Though our data are influenced by large additional RF probe pads, the device exhibits a maximum oscillation frequency fmax of 10.1GHz and a cut-off frequency fτ of 1.8GHz at a DC bias point of IC=10mA and VCE = 2.5V.