Exploring an effective model of new product development in medical devices: A knowledge cluster approach

This study proposes a new product development (NPD) model that aims to improve the effectiveness of innovative NPD in the medical devices. By adopting open innovation theory and applying an in-depth investigation methodology, this paper proposes a knowledge cluster that improves the integration of interdisciplinary human resources and enhances the acquirement of innovative technologies. A knowledge cluster approach helps gather, organise, synthesise, and accumulate knowledge in order to become the impetus for innovation. Although enterprises are no longer the principals of research and development, they should still be capable of integrating professional physicians, external groups, and individuals through the knowledge cluster platform. However, in order to support an effective NPD model, enterprises should provide adequate incentives and trust to external individuals or groups willing to contribute their expertise and knowledge to this knowledge cluster platform. Copyright © 2013 Inderscience Enterprises Ltd.

Studies on the effects of silver carp (Hypophthalmichthys molitrix) on the Phytoplankton in a shallow hypereutrophic lake through an enclosure experiment

The responses of nutrients, water transparency, zooplankton and phytoplankton to a gradient of silver carp biomass were assessed using enclosure methods. The gradient of four silver carp biomass levels was set as follows: 0, 116, 176 and 316 g m(-2). Nutrients did not show any statistically significant differences among the treatments. An Outburst of Daphnia only occurred in fishless enclosures where phytoplankton biomass was the lowest and water clarity significantly increased. While among fish enclosures, the small-sized Moina micrura dominated throughout the experiment and both zooplankton and phytoplankton biomasses decreased with increased fish biomass. No large colonial cyanobacterial blooms occurred in the fishless enclosures as predicted. This might be due to low water temperature. short experiment time and the occurrence of large bodied Daphnia in our experiment. Cryptophyta was the most dominant group in most of the enclosures and the lake water throughout the experiment. The fishless enclosure had much lower proportion of Cyanophyta but higher proportion of Trachelomonas sp.

The molecular characterization of RNA segment S9 of grass carp hemorrhage virus (GCHV), an aquareovirus

Although reovirus infection is one of the major virus diseases of grass carp in China, the available knowledge on the structure and function of genes and proteins of the virus is limited. The complete sequence of the S9 genome segment of grass carp hemorrhage virus (GCHV) was determined. The segment consists of 1130 nucleotides and has a large open reading frame (ORF) encoding a protein of 352 amino acids with predicted molecular mass of 37.7 kDa. Amino acid sequence comparison revealed that the deduced protein encoded by GCHV S9 is closely related to the sigma NS proteins of mammalian reovirus (MRV) and avian reovirus (ARV). Secondary structure analysis displayed that the form of alpha -helices (40.1%) and beta -sheets (49.4%) are the richest two contents in the protein encoded by S9, and this protein is predicted to be a nonstructural protein. (C) 2001 Elsevier Science B.V. All rights reserved.

Molecular characterization and expression of the M6 gene of grass carp hemorrhage virus (GCHV), an aquareovirus - Brief report

7The complete nucleotide sequence of M6 gene of grass carp hemorrhage virus (GCHV) was determined. It is 2039 nucleotides in length and contains a single large open reading frame that could encode a protein of 648 amino acids with predicted molecular mass of 68.7 kDa. Amino acid sequence comparison revealed that the protein encoded by GCHV M6 is closely related to the protein mul of mammalian reovirus. The M6 gene, encoding the major outer-capsid protein, was expressed using the pET fusion protein vector in Escherichia coli and detected by Western blotting using chicken anti-GCHV immunoglobulin (IgY). The result indicates that the protein encoded by M6 may share a putative Asn-42-Pro-43 proteolytic cleavage site with mul.

Fabrication and performance of an index-coupled DFB laser with sampled grating

An index-coupled DFB laser with a sampled grating has been designed and fabricated. The key concept of the approaches is to utilize the +1st-order reflection of the sampled grating for laser operation, and use a conventional holographic exposure combined with the usual photolithography to form the sampled grating. The typical threshold current of the sampled grating DFB laser is 25 mA, and the optical output is about 10 mW at the injected current of 100 mA. The lasing wavelength of the device is 1.5314 mu m, which is the +1st-order peak of the sampled grating.

Q-switched and mode-locked diode-pumped Nd : YVO4 laser with an intracavity composite semiconductor saturable absorber

We have demonstrated a passively Q-switched and mode-locked Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber (ICSSA). Stable Q-switched and mode-locked pulses with Q-switched envelope pulse duration of 180 ns and pulse repetition rate of 72KHz have been obtained. The maximum average output power was 1.45W at 8W incident pump power. The repetition rate of the mode-locked pulses inside the Q-switched envelope was 154 MHz. Experimental results revealed that this ICSSA was suitable for Q-switched and mode-locked solid-state lasers. (c) 2007 Elsevier Ltd. All rights reserved.

Organic light emitting diodes with an organic acceptor/donor interface involved in hole injection

Organic light emitting diodes with an interface of organic acceptor 3-, 4-, 9-, 10-perylenetetracarboxylic dianhydride (PTCDA) and donor copper phthalocyanine (CuPc) involved in hole injection are fabricated. As compared to the conventional device using a 5 nm CuPc hole injection layer, the device using an interface of 10 nm PTCDA and 5 rim CuPc layers shows much lower operating voltage with an increase of about 46% in the maximum power efficiency. The enhanced device performance is attributed to the efficient hole generation at the PTCDA/CuPc interface. This study provides a new way of designing hole injection.

Near-field scanning optical microscopy with an active probe

A near-field scanning optical microscopy (NSOM) system employing a very-small-aperture laser (VSAL) as an active probe is reported in this Letter. The VSAL in our experiment has an aperture size of 300 nmx300 nm and a near-field spot size of about 600 nm. The resolution of the NSOM system with the VSAL can reach about 600 nm, and even 400 nm. Considering the high output power of the VSAL, such a NSOM system is a potentially useful tool for nanodetection, data storage, nanolithography, and nanobiology.

Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer

High-quality GaN epilayers were grown on Si (1 1 1) substrate by metalorganic chemical vapor deposition. The growth process was featured by using an ultrathin AlN wetting layer (WL) in combination with a low-temperature (LT) GaN nucleation layer (NL). The full-width at half-maximum (FWHM) of the X-ray rocking curve for the GaN (0 0 0 2) diffraction was 15 arcmin. The dislocation density estimated from TEM investigation was found to be of the order of 10(9)cm(-2). The FWHM of the dominant band edge emission peak of the GaN was measured to be 47 meV by photoluminescence measurement at room temperature. The ultrathin AlN WL was produced by nitridation of the aluminium pre-covered substrate surface. The reflection high-energy electron diffraction showed that the AlN WL was wurtzite and the surface morphology was like the nitridated surface of sapphire by the atomic force microscopy measurement. X-ray photoelectron spectroscopy measurement showed that Si and SixNy at a certain concentration were intermixed in the AlN WL. This study suggests that by employing an appropriate WL combined with a LT NL, high-quality heteroepitaxy is achievable even with large mismatch. (C) 2002 Elsevier Science B.V. All rights reserved.

The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy

Single crystal GaN films have been grown on to an Al2O3 coated (001)Si substrate in a horizontal-type low-pressure MOVPE system. A thin Al2O3 layer is an intermediate layer for the growth of single crystal GaN on to Si although it is only an oriented polycrystal him as shown by reflection high electron diffraction. Moreover, the oxide was not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN overlayer as studied by transmission electron microscopy. Double crystal X-ray diffraction showed that the linewidth of (0002) peak of the X-ray rocking curve of the 1.3 mu m sample was 54 arcmin and the films had heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature was observed by photoluminescence spectroscopy. (C) 1998 Elsevier Science B.V. All rights reserved.

Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer

Wurtzite GaN films have been grown on (001) Si substrates using gamma-Al2O3 as an intermediate layer by low pressure (similar to 76 Torr) metalorganic chemical vapor deposition. Reflection high energy electron diffraction and double crystal x-ray diffraction measurements revealed that the thin gamma-Al2O3 layer of "compliant" character was an effective intermediate layer for the GaN film grown epitaxially on Si. The narrowest linewidth of the x-ray rocking curve for (0002) diffraction of the 1.3 mu m GaN sample was 54 arcmin. The orientation relationship of GaN/gamma-Al2O3/Si was (0001) GaN parallel to(001) gamma-Al2O3 parallel to(001) Si, [11-20] GaN parallel to[110] gamma-Al2O3 parallel to[110] Si. The photoluminescence measurement for GaN at room temperature exhibited a near band-edge peak of 365 nm (3.4 eV). (C) 1998 American Institute of Physics.