Transport properties, structure, and radiation induced defect studies in amorphous carbon films

Amorphous conducting carbon films are prepared by plasma assisted chemical vapour deposition and their d.c. conductivity (similar to 100 Scm(-1)) is studied from 300K down to 4.2K. The films were irradiated by high energy ion beam(I+13, 170 MeV) with a dose of 10(13) ions/cm(2). As a result a marked decrease in conductivity by two to three orders in magnitude was observed. The structural changes and the defects in the films caused by ion irradiation are studied using photoluminescence, persistent photoconductivity, and ESR spectroscopy.

Amorphous, Monoclinic, and Tetragonal Porous Zirconia Through a Controlled Self-Sustained Combustion Route

Porous, large surface area, metastable zirconias, are of importance to catalytic, electrochemical, biological, and thermal insulation applications. Combustion synthesis is a very commonly used method for producing such zirconias. However, its rapid nature makes control difficult. A simple modification has been made to traditional solution combustion synthesis to address this problem. It involves the addition of starch to yield a starting mixture with a ``dough-like'' consistency. Just 5 wt% starch is seen to significantly alter the combustion characteristics of the ``dough.'' In particular, it helps to achieve better control over reaction zone temperature that is significantly lower than the one calculated by the adiabatic approximation typically used in self-propagating high-temperature synthesis. The effect of such control is demonstrated by the ability to tune dough composition to yield zirconias with different phase compositions from the relatively elusive ``amorphous'' to monoclinic (> 30 nm grain size) and tetragonal pure zirconia (< 30 nm grain size). The nature of this amorphous phase has been investigated using infrared spectroscopy. Starch content also helps tailor porosity in the final product. Zirconias with an average pore size of about 50 mu m and specific surface area as large as 110 m2/g have been obtained.

Some unusual features in the Raman spectrum of amorphous-carbon films obtained by pyrolysis of maleic anhydride

Laser micro-Raman spectroscopic measurements were done on the amorphous conducting carbon films obtained from maleic anhydride by pyrolysis process. We have found a predominant broad peak around 1140 cm(-1), in addition to the normally observed peaks in amorphous carbons around 1350 and 1600 cm(-1), and peak of medium intensity around 800 cm(-1). Here we discuss the possibility of conjugated polymer like bond alternating structure which can give rise to these unusual Raman features. (C) 1997 American Institute of Physics.

Structure of highly conducting amorphous carbon

We report on neutron diffraction study of a new form of conducting amorphous carbon up to Q similar to 14.5 Angstrom(-1). The bond distances from first two peaks in g(r) are 1.45 and 2.49 Angstrom, very similar to those in sputtered truly amorphous carbon films (Li and Lannin, Phys. Rev. Lett. 65 (1990) 1905). The first coordination number is 3.1 (+/- 0.1) indicating predominantly sp(2) hybridisation (ideal no. = 3). However, S(Q) itself shows vestiges of (0 0 2), (1 0) and (1 1) peaks, typical of glassy carbon (Mildner, J. Non-Cryst. Solids 47 (1982) 391). (C) 1998 Elsevier Science B.V. All rights reserved.

Size effect on the superconducting transition of embedded lead particles in an Al-Cu-V amorphous matrix

We have synthesized specimens of nanometric lead dispersion in a glassy Al-Cu-V matrix by rapid solidification of the corresponding melt. The microstructure has been designed to avoid superconducting percolation due to coupling of the neighboring particles by the proximity effect. Using these specimens, we have determined quantitatively the effect of size of the ultrafine lead particles on the superconducting transition. (C) 1999 American Institute of Physics. [S0003-6951(99)02037-9].

Synthesis of crystallites of carbon nitride in amorphous carbon

We report the successful synthesis of crystalline carbon nitride by chemical vapor deposition of certain nitrogen containing organic precursors. The precursor is heated and the vapors enter the hot deposition zone where they are pyrolysed and deposited in the form of thin films over pretreated substrates. The powder x-ray diffraction analysis shows clear peaks corresponding to the carbon nitride crystals of tetragonal form in addition to a broad hump corresponding to the amorphous nitrogenated carbon. The crystallites size is similar to300Angstrom and the volume fraction of the crystallites is about similar to7%. The optimum conditions of preparation are found out. The Infrared spectra of these samples also suggest the formation of Carbon Nitride crystals. The analysis reconfirms that the material contains crystallites of Carbon Nitride embedded in an amorphous matrix of nitrogenated carbon. Further the material is characterized by C,H,N elemental analysis, EDX and Raman spectra. Since all the above analyses probe the bulk material, the background amorphous matrix in this case, expecting a clear evidence of nanometer sized crystallites from these tests are unlikely. Attempts are being made to increase the yield of these carbon nitride crystallites.

Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti(62.5)Si(37.5) thin films during Xe ion irradiation

As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe(+) ion beam to an ion fluence of about 10(16) ions-cm(-2). Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti(5)Si(3) intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

Evolution of metastable phases during crystallization of pulsed laser deposited amorphous Al–Fe films

Amorphous thin films of different Al–Fe compositions were produced by plasma/vapor quenching during pulsed laser deposition. The chosen compositions Al72Fe28, Al40Fe60, and Al18Fe82 correspond to Al5Fe2 and B2-ordered AlFe intermetallic compounds and α–Fe solid solution, respectively. The films contained fine clusters that increased with iron content. The sequences of phase evolution observed in the heating stage transmission electron microscopy studies of the pulsed laser ablation deposited films of Al72Fe28, Al40Fe60, and Al18Fe82 compositions showed evidence of composition partitioning during crystallization for films of all three compositions. This composition partitioning, in turn, resulted in the evolution of phases of compositions richer in Fe, as well as richer in Al, compared to the overall film composition in each case. The evidence of Fe-rich phases was the B2 phase in Al72Fe28 film, the L12- and DO3-ordered phases in Al40Fe60 film, and the hexagonal ε–Fe in the case of the Al18Fe82 film. On the other hand, the Al-rich phases were Al13Fe4 for both Al72Fe28 and Al40Fe60 films and DO3 and Al5Fe2 phases in the case of Al18Fe82 film. We believe that this tendency of composition partitioning during crystallization from amorphous phase is a consequence of the tendency of clustering of the Fe atoms in the amorphous phase during nucleation. The body-centered cubic phase has a nucleation advantage over other metastable phases for all three compositions. The amorphization of Al18Fe82 composition and the evolution of L12 and ε–Fe phases in the Al–Fe system were new observations of this work.

Superconductivity of embedded lead nano particles in metallic and amorphous matrices

Nanodispersed lead in metallic and amorphous matrices was synthesized by rapid solidification processing. The optimum microstructure was tailored to avoid percolation of the particles. With these embedded particles it is possible to study quantitatively the effect of size on the superconducting transition temperature by carrying out quantitative microstructural characterization and magnetic measurements. Our results suggest the role of the matrices in enhancement or depression of superconducting transition temperature of lead. The origin of this difference in behavior with respect to different matrices and sizes is discussed.

Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti62.5Si37.5 thin films during Xe ion irradiation

As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe+ ion beam to an ion fluence of about 1016 ions-cm−2. Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti5Si3 intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

Tuning of the metal-insulator transition in iodine incorporated amorphous carbon

We present the synthesis and properties of iodine incorporated amorphous carbon films. Optical studies depict a decrease in band gap with variation in iodine content and pyrolysis temperature. Tuning of the metal-insulator transition is achieved by varying the pyrolysis temperature and iodine concentration. Appreciable decrease in magnetoresistance is observed with iodine incorporation, but negative magnetoresistance typical behavior of metallic samples is not witnessed.

Amorphous Hydrogenated Silicon: A Perspective on Circuit Synthesis

Abstract | Non-crystalline or glassy semiconductors are of great research interest for the fabrication of large area electronic systems such as displays and image sensors. Good uniformity over large areas, low temperature fabrication and the promise of low cost electronics on large area mechanically flexible and rigid substrates are some attractive features of these technologies. The article focusses on amorphous hydrogenated silicon thin film transistors, and reviews the problems, solutions and applications of these devices.

Densification studies on amorphous ZrO2-Al2O3 powders

Densification characteristics of amorphous ZrO2-40 mol% Al2O3 powder with 3 to 15 mu m nominal particle size range, produced by spray pyrolysis, have been studied by conducting hot pressing experiments at 573, 723 and 873 K with uniaxial pressures of 250, 500 and 750 MPa. Most of the increase in relative density from the starting value of similar to 40% occurred during loading up to the desired pressure. The increments in density during 1 hour constant pressure dwells were less than 4% at all temperatures and pressure. Inter-particle bonding was not observed at 573 K. Correlation between the results with a viscous sintering model for hot pressing is not satisfactory for describing the behavior as normal viscous sintering.