ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE

Microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by using Auger-electron spectroscopy (AES) and x-ray photoemission spectroscopy (XPS). AES reveals that only phosphorus and sulfur, but not oxygen, are contained in the interface between passivation film and GaAs substrate. Using XPS it is found that both Ga2O3 and As2O3 are removed from the GaAs surface by the P2S5/NH4OH treatment; instead, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of the density of states of the surface electrons and an improvement of the electronic and optical properties of the GaAs surface.

Widely Tunable Sampled-Grating DBR Laser

The 3-section SG-DBR tunable laser is fabricated using an ion implantation quantum-well intermixing process. The over 30nm discontinuous tuning range is achieved with the SMRS greater than 30dB.

快重离子辐照引起Ni/SiO2界面原子混合及相变研究

Ni/SiO2 interface were irradiated at room temperature with 308 MeV Xe ions to 1×1012,5×1012 Xe/cm2 and 853 MeV Pb ions to 5×1011 Pb/cm2,respectively.These samples were analyzed using Rutherford Backscattering Spectrometry(RBS) and X-ray diffraction spectroscopy(XRD),from which the intermixing and phase change were investigated.The obtained results show that both Xe-and Pb-ions could induce diffusion of Ni atoms to SiO2 substrates and result in intermixing of Ni with SiO2.Furthermore,1.0×1012 Xe/cm2 irradiat...中文摘要：在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/SiO2样品,用卢瑟福背散射和X射线衍射技术对样品进行了分析。通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化,探索了离子辐照在Ni/SiO2样品中引起的界面原子混合与结构相变现象。实验结果显示,Xe和Pb离子辐照均能引起明显的Ni原子向SiO2基体的扩散并导致界面附近Ni,Si和O原子的混合。实验观测到低剂量Xe离子辐照可产生NiSi2相,而高剂量Xe离子辐照则导致了Ni3Si和NiO相的形成。根据热峰模型,Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动。

快重离子辐照引起Ni/SiO_2界面原子混合及相变研究

在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/Si O2样品,用卢瑟福背散射和X射线衍射技术对样品进行了分析。通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化,探索了离子辐照在Ni/SiO2样品中引起的界面原子混合与结构相变现象。实验结果显示,Xe和Pb离子辐照均能引起明显的Ni原子向SiO2基体的扩散并导致界面附近Ni,Si和O原子的混合。实验观测到低剂量Xe离子辐照可产生NiSi2相,而高剂量Xe离子辐照则导致了Ni3Si和Ni O相的形成。根据热峰模型,Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动。

三体核力重排效应对核物质中单核子平均场的贡献

在微观多体Brueckner-Hartree-Fock理论框架内,实现了三体核力对核物质中单核子势的重排贡献的计算,研究了三体核力重排贡献对单核子平均势场的动量相关性和密度依赖性的影响．另外,还计算了核物质中核子的有效质量并着重讨论了三体核力重排效应的影响．结果表明：三体核力对单核子势的重排贡献具有排斥性,而且三体核力的重排效应随动量和密度的增加而迅速增强；在高密度和高动量区域这一排斥贡献具有很强的动量相关性并起到了减弱单核子势吸引性和增强单核子势动量相关性的重要作用,有助于澄清非相对论性BHF平均势场在高密度和高动量区域吸引性过强和动量相关性过弱的问题．

库仑作用对同位旋分馏过程的影响

利用同位旋相关的量子分子动力学模型研究了中能重离子碰撞中库仑作用对同位旋分馏过程的影响 .研究结果表明 ,在所研究的能区 ,无论是丰 (缺 )中子碰撞系统或者轻 (重 )反应系统 ,库仑作用都使同位旋分馏过程减弱 ,而这种影响主要来自于库仑作用对质子的排斥作用 ,使更多的质子发射 ,从而降低了气相中子 -质子比所导致

重丰中子同位素~(237)Th半衰期的测定

用 60 Me V/u18O离子轰击天然铀靶 ,通过多核子转移反应产生重丰中子同位素 2 3 7Th。使用改进的相对快的分离钍的放射化学流程 ,从大量铀和复杂反应产物混合物中分离钍 ,用高纯锗( HPGe)探测器联同多道分析器对化学分离的钍样品做离线 γ射线谱学研究 ,通过对 2 37Th子体 2 37Pa(半衰期 8.7min)的 853.7ke Vγ射线的生长 -衰变曲线的分析 ,确定 2 37Th的半衰期为 4 .69± 0 .60min。

Modification of C-doped a-SiO2 after Swift Heavy-Ion Irradiation

Amorphous SiO2 (a-SiO2) thin films were thermally grown on single-crystalline silicon. These a-SiO2/Si samples were first implanted (C-doped) with 100-keV carbon ion at room temperature (RT) at a dose of 5.0 x 10(17) C-ions/cm(2) and were then irradiated at RT by using 853 MeV Pb ions at closes of 5.0 x 10(11), 1.0 x 10(12), 2.0 x 10(12) and 5.0 x 10(12) Pb-ions/cm(2), respectively. The microstructures and the photoluminescence (PL) properties of these samples induced by Pb ions were investigated using fluorescence spectroscopy and transmission electron microscopy. We found that high-energy Pb-ion irradiation could induce the formation of a new phase and a change in the PL property of C-doped a-SiO2/Si samples. The relationship between the observed phenomena and the ion irradiation parameters is briefly discussed.

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO2 thin films with about 400-500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0 x 10(17),5.0 X 10(17) or 1.2 x 10(18) ions/cm(2), then irradiated at RT by 853 MeV Pb ions to 5.0 x 10(11), 1.0 X.10(12) 2.0 x 10(12) or 5.0 x 10(12) ions/cm(2), respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0 x 10(12) Pb-ions/cm(2) irradiation produced huge blue and green light-emitters in 2.0 x 10(17) C-ions/cm(2) implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0 x 10(17) carbon-ions/cm(2) implanted samples, 2.0 x 10(12) Pb-ions/cm(2) irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0 x 10(12) Pb-ionS/cm(2) irradiation could,create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2 x 10(18) carbon-ions/cm(2) implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type Of SiO2-based light-emission materials.

Three-body force rearrangement contribution to single nucleon potential in nuclear matter

Within the framework of microscopic Brueckner-Hatree-Fock, the contribution of the three-body force (TBF) rearrangement to the. single nucleon potential is calculated. The TBF rearrangement effects on the momentum and the density dependence of the single nucleon potential are investigated. The influence of the TBF rearrangement on the effective mass of nucleon is also discussed. It is shown that the rearrangement contribution of TBF is repulsive and momentum-dependent. The TBF rearrangement effect and its momentum dependence increase rapidly as increasing density and momentum. At high densities and high momenta, the repulsive rearrangement contribution reduces strongly the attraction of the single nucleon potential and enhances considerably the momentum dependence of the single nucleon potential.