拟南芥砷酸还原酶基因AtACR2的表达调控及其功能分析

将砷酸盐还原为亚砷酸盐是植物砷代谢途径中的关键步骤，其中砷酸还原酶是催化砷酸盐还原的关键酶。目前，对植物中砷酸还原酶基因的表达调控机制及该基因的功能了解得还不是很清楚。因此研究拟南芥砷酸还原酶基因的表达调控及其功能对于探讨植物对砷吸收、代谢、转运和富集的分子机制有重要意义。 本论文利用拟南芥砷酸还原酶基因（AtACR2）的启动表达调控序列的不同组合驱动GUS基因转录表达，对AtACR2启动表达调控序列的功能进行了分析；同时利用过表达、AtACR2基因T-DNA插入缺失突变体和地上部特异表达对拟南芥和蜈蚣草砷酸还原酶的基因功能进行了初步分析，主要结果如下： 1．对拟南芥AtACR2基因在不同砷酸盐处理浓度(0、100 yM、200 yM) 下的RT-PCR分析初步表明：在未用Na3As04处理的拟南芥幼苗中，AtACR2基因在根和茎叶中均有表达，且其在根中的转录水平高于茎叶中。同时该基因的表达在转录水平上受砷酸盐的负调控，即随着外界砷酸盐浓度的升高，AtACR2基因的转录水平降低。 2．将AtACR2基因不同启动调控序列组合驱动GUS基因转录表达，结果表 明：①由AtACR2基因上游1250 bp及其5’端非编码医构成的启动调控序列不足以启动AtACR2基因的转录表达和砷酸盐胁迫的应答；②在第一外显子和第一内含子中存在启动AtACR2基因起始转录表达的关键序列元件，它们的存在决定了该基因能否得以转录表达；⑧第一外显子和第一内含子序列中不仅存在起始基因转录的必需元件，还存在砷胁迫相关的应答元件，参与砷酸盐抑制AtACR2基因的转录表达调控；④在第二外显子和第二内含子中可能存在增强基因表达的调控元件序列，进一步影响该基因转录表达强度的调控。 3． 拟南芥AtA CR2基因和砷超富集植物蜈蚣草PvA CR2基因在拟南芥中过表达后的功能分析初步表明：①转基因植株能够通过减少体内As含量增强对砷酸盐的抗性；②两种植物的砷酸还原酶作用能力存在一定差异，其中超表达蜈蚣草PvA CR2能够使转基因植株根中As含量更少，但其对砷酸盐胁迫的抗性并没有AtACR2超表达植株强，这可能与转 PvA CR2基因植株地上部积累相对较高的砷含量有关。 4．将AtA CR2和PvA CR2在拟南芥中地上部特异表达后，抗性实验初步表明：①以野生型拟南芥为背景材料进行地上部特异超表达AtACR2或PvA CR2基因，不能增强转基因植株对砷酸盐抗性；②以AtA CR2基因的T-DNA插入缺失突变体为背景材料地上部特异表达AtACR2或PvA CR2基因，却能够明显增强转基因植株对砷酸盐的抗性。综上所述，植物砷酸还原酶基因在植物对砷酸盐胁迫的响应和调控中起着重要作用。

Multi-dimensional conditional moment closure modelling applied to a heavy-duty common-rail diesel engine

A multi-dimensional combustion code implementing the Conditional Moment Closure turbulent combustion model interfaced with a well-established RANS two- phase flow field solver has been employed to study a broad range of operating conditions for a heavy duty direct-injection common-rail Diesel engine. These conditions include different loads (25%, 50%, 75% and full load) and engine speeds (1250 and 1830 RPM) and, with respect to the fuel path, different injection timings and rail pressures. A total of nine cases have been simulated. Excellent agreement with experimental data has been found for the pressure traces and the heat release rates, without adjusting any model constants. The chemical mechanism used contains a detailed NOx sub-mechanism. The predicted emissions agree reasonably well with the experimental data considering the range of operating points and given no adjustments of any rate constants have been employed. In an effort to identify CPU cost reduction potential, various dimensionality reduction strategies have been assessed. Furthermore, the sensitivity of the predictions with respect to resolution in particular relating to the CMC grid has been investigated. Overall, the results suggest that the presented modelling strategy has considerable predictive capability concerning Diesel engine combustion without requiring model constant calibration based on experimental data. This is true particularly for the heat release rates predictions and, to a lesser extent, for NOx emissions where further progress is still necessary. © 2009 SAE International.

树鼩CXCR4cDNA的克隆和序列分析

　目的　获得树　CXCR4 的cDNA 序列,探讨其是否可以支持HIV-1 病毒和细胞的结合。方法　设计 相应的引物, 用RT- PCR ,基因克隆,DNA 序列分析技术。结果　获得了全长为1059bp 树　CXCR4 (tsCXCR4) 基因 的cDNA。发现其核苷酸序列与人的CXCR4 (hCXCR4) 基因的cDNA 有9218 % 的相似性,由此推导出的氨基酸序列 有9619 % 相似性。与hCXCR4 功能相关的关键位点完全相同,tsCXCR4 的N 端第7 和12 位点为酪氨酸,第14、15 和 32 位点为谷氨酸,胞外环第183 ,188 为精氨酸, 第193、262 位点以及跨膜区97 位点为天冬氨酸。结论　树　的CX2 CR4 很可能会作为HIV-1 的辅助受体。　

美姑脊蛇Achalinus meiguensis线粒体基因组全序列及系统发育地位研究

报道了美姑脊蛇Achalinus meiguensis线粒体基因组全序列.美姑脊蛇线粒体全序列长17239bp,由22个tRNA,2个rRNA和13个蛋白质基因及2个非编码的控制区或D-loop组成,存在着基因重排现象.对已报道蛇类线粒体基因组全序列进行比对分析后,发现一些蛇类线粒体基因组进化规律:双控制区现象在爬行动物进化历史中独立地发生,有不同的演化历史;tRNA假基因是在真蛇下目(Caenophidia)中进化形成的;TΨC臂的相对较短(一般少于5bp)和缺失"DHU"臂造成蛇类tRNA较短.通过M

湖北省牛山湖13种小型鱼类的能量密度

国家科技攻关课题(2004BA526B05); 淡水生态与生物技术国家重点实验室开发课题(2005FB02)资助

Light absorption and electrical transport in Si:O alloys for photovoltaics

Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was also employed to follow the amorphous-crystalline (a-c) transition of the Si domains contained in the Si:O films. The optical absorption and the electrical transport of Si:O films can be continuously and independently modulated by acting on different parameters. The light absorption increases (by one decade) with the Si content in the 43-100 at. % range, determining an optical band gap which can be continuously modulated into the 2.6-1.6 eV range, respectively. The a-c phase transition in Si:O films, causing a significant reduction in the absorption coefficient, occurs at increasing temperatures (from 600 to 1100 °C) as the Si content decreases. The electrical resistivity of Si:O films can be varied among five decades, being essentially dominated by the number of Si grains and by the doping. Si:O alloys with Si content in the 60-90 at. % range (named oxygen rich silicon films), are proved to join an appealing optical gap with a viable conductivity, being a good candidate for increasing the conversion efficiency of thin-film photovoltaic cell. © 2010 American Institute of Physics.

Light absorption in silicon quantum dots embedded in silica

The photon absorption in Si quantum dots (QDs) embedded in SiO2 has been systematically investigated by varying several parameters of the QD synthesis. Plasma-enhanced chemical vapor deposition (PECVD) or magnetron cosputtering (MS) have been used to deposit, upon quartz substrates, single layer, or multilayer structures of Si-rich- SiO2 (SRO) with different Si content (43-46 at. %). SRO samples have been annealed for 1 h in the 450-1250 °C range and characterized by optical absorption measurements, photoluminescence analysis, Rutherford backscattering spectrometry and x-ray Photoelectron Spectroscopy. After annealing up to 900 °C SRO films grown by MS show a higher absorption coefficient and a lower optical bandgap (∼2.0 eV) in comparison with that of PECVD samples, due to the lower density of Si-Si bonds and to the presence of nitrogen in PECVD materials. By increasing the Si content a reduction in the optical bandgap has been recorded, pointing out the role of Si-Si bonds density in the absorption process in small amorphous Si QDs. Both the photon absorption probability and energy threshold in amorphous Si QDs are higher than in bulk amorphous Si, evidencing a quantum confinement effect. For temperatures higher than 900 °C both the materials show an increase in the optical bandgap due to the amorphous-crystalline transition of the Si QDs. Fixed the SRO stoichiometry, no difference in the optical bandgap trend of multilayer or single layer structures is evidenced. These data can be profitably used to better implement Si QDs for future PV technologies. © 2009 American Institute of Physics.

Synthesis and luminescence properties of erbium silicate thin films

We have studied the structure and the room temperature luminescence of erbium silicate thin films deposited by rf magnetron sputtering. Films deposited on silicon oxide layers are characterized by good structural properties and excellent stability. The optical properties of these films are strongly improved by rapid thermal annealing processes performed in the range of temperature 800-1250 °C. In fact through the reduction of the defect density of the material, a very efficient room temperature photoluminescence at 1535 nm is obtained. We have also investigated the influence of the annealing ambient, by finding that treatments in O2 atmosphere are significantly more efficient in improving the optical properties of the material with respect to processes in N2. Upconversion effects become effective only when erbium silicate is excited with high pump powers. The evidence that all Er atoms (about 1022 cm-3) in erbium silicate films are optically active suggests interesting perspectives for optoelectronic applications of this material. © 2007 Elsevier B.V. All rights reserved.

La 0.7Ca 0.3MnO 3 / Mn 3O 4 composites: Does an insulating secondary phase always enhance the low field magnetoresistance of manganites

Composites of magnetoresistive La 0.7Ca 0.3MnO 3 (LCMO) with insulating Mn 3O 4 are useful as a model system because no foreign cation is introduced in the LCMO phase by interdiffusion during the heat treatment. Here we report the magnetotransport properties as a function of sintering temperature T sinter for a fixed LCMO/Mn 3O 4 ratio. Decreasing T sinter from 1250 °C to 800 °C causes an increase in low field magnetoresistance (LFMR) that correlates with the decrease in crystallite size (CS) of the LCMO phase. When plotting LFMR at (77 K, 0.5 T) versus 1/CS, we find that the data for the LCMO/Mn 3O 4 composites sintered between 800 °C and 1250 °C follow the same trend line as data from the literature for pure LCMO samples with crystallite size >∼25 nm. This differs from the LFMR enhancement observed by many authors in the usual manganite composites, i.e., composites where the insulating phase contains cations other than La, Ca or Mn. This difference suggests that diffusion of foreign cations into the grain boundary region is a necessary ingredient for the enhanced LFMR. © 2012 American Institute of Physics.