Characterization of Er3+-doped Na2O-WO3-TeO2 glass for ion-exchanged waveguide amplifiers and lasers

Er^(3+)-doped Na2O-WO3-TeO2 glass consistent with standard ion-exchange technology has been fabricated and characterized. The measured absorption and emission spectra of the glass were analyzed by the Judd-Ofelt and McCumber theories. The intensity parameters are Ω2 = 7.01

Gain and noise figure of a double-pass waveguide amplifier based on Er/Yb-doped phosphate glass

A waveguide amplifier is fabricated by Ag+-Na+ two-step ion exchange on Er/Yb-doped phosphate glass. The spectroscopic performance of glass and the properties of channel waveguide are characterized. A double-pass configuration is adopted to measure the gain and noise figure (NF) of the waveguide amplifier, and the comparison of gain and NF for the single and double-pass configuration of the waveguide amplifier is presented. The results show that the double-pass configuration can make the gain increase from 8.8dB (net gain 2.2dB/cm) of the single-pass one to 14.6 dB (net gain 3.65 dB/cm) for small input power at 1534 nm, and the NF are all lower than 5.5dB for both the configurations.

Property studies of optical waveguide formed by 6.0 MeV carbon ion implantation into Nd : silicate glass

Nd:silicate glass was implanted at room temperature by 6.0 MeV C3+ ions with a dose of 2.0 x 10(15) ions cm(-2). A waveguide with thickness of about 6.3 mu m was formed. The prism-coupling method was used to observe the dark modes of the waveguide at 633 nm and 1539 nm, respectively. There are three dark modes at 633 nm, of which one is the enhanced-index mode. The propagation loss of the enhanced-index mode in the waveguide measured at 633 nm is 0.42 dB cm(-1) after annealing at 217 degrees C for 35 min. The reflectivity calculation method was applied to simulate the refractive index profiles in the waveguide. The mode optical near-field output at 633 nm was presented.

Electro-optic modulation of 1.5μm light in an active InGaAsP/InP quantum well waveguide

We report an InGaAsP/InP phase modulator operating in the 1.5μm wavelength band. Phase modulation of 7.5°/mA and 1.7°/mA of injected current have been measured for TE and TM polarised light respectively at a signal wavelength of 1.52 μm.