947 resultados para ultrashort intense laser pulse
Resumo:
A multiple-staged ion acceleration mechanism in the interaction of a circularly polarized laser pulse with a solid target is studied by one-dimensional particle-in-cell simulation. The ions are accelerated from rest to several MeV monoenergetically at the front surface of the target. After all the plasma ions are accelerated, the acceleration process is repeated on the resulting monoenergetic ions. Under suitable conditions multiple repetitions can be realized and a high-energy quasi-monoenergetic ion beam can be obtained.
Resumo:
Electrons accelerated by a propagating laser pulse of linear or circular polarization in vacuum have been investigated by one-dimensional particle-in-cell simulations and analytical modeling. A stopping target is used to stop the laser pulse and extract the energetic electrons from the laser field. The effect of the reflected light is taken into account. The maximum electron energy depends on the laser intensity and initial electron energy. There is an optimal acceleration length for electrons to gain maximum energy where electrons meet the peak of the laser pulse. The optimal acceleration length depends strongly on the laser pulse duration and amplitude. (C) 2007 American Institute of Physics.
Resumo:
The interaction of an ultraintense circularly polarized laser pulse and a solid target is studied by one-dimensional particle-in-cell simulations. Ions at the front of the target are reflected by a moving quasisteady electrostatic field and obtain a relativistic velocity. At a laser intensity of 10(22) W/cm(2), almost half of the laser energy is transferred to ions and GeV ions are obtained. Effects of laser polarization state and target thickness on the laser energy conversion are investigated. It is found that a circularly polarized laser pulse can accelerate ions more efficiently than a linearly polarized laser pulse at the same laser and target parameters. A monoenergetic ion bunch is obtained for the ultrathin target, which is accelerated as a single entity. (c) 2007 American Institute of Physics.
Resumo:
We introduce a four-pass laser pulse compressor design based on two grating apertures with two gratings per aperture that is tolerant to some alignment errors and, importantly, to grating-to-grating period variations. Each half-beam samples each grating in a diamond-shaped compressor that is symmetric about a central bisecting plane. For any given grating, the two half-beams impinge on opposite sides of its surface normal. It is shown that the two split beams have no pointing difference from paired gratings with different periods. Furthermore, no phase shift between half-beams is incurred as long as the planes containing a grating line and the surface normal for each grating of the pair are parallel. For grating pairs satisfying this condition, gratings surfaces need not be on the same plane, as changes in the gap between the two can compensate to bring the beams back in phase. © 2008 Optical Society of America.
Resumo:
Crystallization is achieved in amorphous Ge2Sb2Te5 films upon irradiation with a single femtosecond laser pulse. Transmission electron microscopy images evidence the morphology of the crystallized spot which depends on the fluence of the ferntosecond laser pulse. Fine crystalline grains are induced at low fluence, and the coarse crystalline grains are obtained at high fluence. At the damage fluence, ablation of the films occurs. (C) 2004 Elsevier Ltd. All rights reserved.
Resumo:
The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.