900 resultados para the scanning reference electrode technique
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Errata slip inserted in v.1.
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"June 1996."
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Includes brief biographical sketches of the subjects of the portraits in the collection.
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Mode of access: Internet.
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At head of title: 87th Cong., 1st sess. Committee print.
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cover-title
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George H. Locke, Chief Librarian.
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Mode of access: Internet.
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Photoprinted.
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Edited by A. H. Bowers, Agronomist, Plant Food Division, Swift and Company.
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Mode of access: Internet.
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Mode of access: Internet.
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Mode of access: Internet.
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Controlled polishing procedures were used to produce both uniformly doped and p-n junction silicon samples with different interface state densities but identical oxide thicknesses. Using these samples, the effects of interface states on scanning capacitance microscopy (SCM) measurements could be singled out. SCM measurements on the junction samples were performed with and without illumination from the atomic force microscopy laser. Both the interface charges and the illumination were seen to affect the SCM signal near p-n junctions significantly. SCM p-n junction dopant profiling can be achieved by avoiding or correctly modeling these two factors in the experiment and in the simulation. (c) 2005 American Institute of Physics.