Loading of itraconazole into porous silica and silicon microparticles: characterization and dissolution tests

Most new drug molecules discovered today suffer from poor bioavailability. Poor oral bioavailability results mainly from poor dissolution properties of hydrophobic drug molecules, because the drug dissolution is often the rate-limiting event of the drug’s absorption through the intestinal wall into the systemic circulation. During the last few years, the use of mesoporous silica and silicon particles as oral drug delivery vehicles has been widely studied, and there have been promising results of their suitability to enhance the physicochemical properties of poorly soluble drug molecules. Mesoporous silica and silicon particles can be used to enhance the solubility and dissolution rate of a drug by incorporating the drug inside the pores, which are only a few times larger than the drug molecules, and thus, breaking the crystalline structure into a disordered, amorphous form with better dissolution properties. Also, the high surface area of the mesoporous particles improves the dissolution rate of the incorporated drug. In addition, the mesoporous materials can also enhance the permeability of large, hydrophilic drug substances across biological barriers. T he loading process of drugs into silica and silicon mesopores is mainly based on the adsorption of drug molecules from a loading solution into the silica or silicon pore walls. There are several factors that affect the loading process: the surface area, the pore size, the total pore volume, the pore geometry and surface chemistry of the mesoporous material, as well as the chemical nature of the drugs and the solvents. Furthermore, both the pore and the surface structure of the particles also affect the drug release kinetics. In this study, the loading of itraconazole into mesoporous silica (Syloid AL-1 and Syloid 244) and silicon (TOPSi and TCPSi) microparticles was studied, as well as the release of itraconazole from the microparticles and its stability after loading. Itraconazole was selected for this study because of its highly hydrophobic and poorly soluble nature. Different mesoporous materials with different surface structures, pore volumes and surface areas were selected in order to evaluate the structural effect of the particles on the loading degree and dissolution behaviour of the drug using different loading parameters. The loaded particles were characterized with various analytical methods, and the drug release from the particles was assessed by in vitro dissolution tests. The results showed that the loaded drug was apparently in amorphous form after loading, and that the loading process did not alter the chemical structure of the silica or silicon surface. Both the mesoporous silica and silicon microparticles enhanced the solubility and dissolution rate of itraconazole. Moreover, the physicochemical properties of the particles and the loading procedure were shown to have an effect on the drug loading efficiency and drug release kinetics. Finally, the mesoporous silicon particles loaded with itraconazole were found to be unstable under stressed conditions (at 38 qC and 70 % relative humidity).

Can one electrochemically measure the statistical morphology of a rough electrode

We have developed a theory for an electrochemical way of measuring the statistical properties of a nonfractally rough electrode. We obtained the expression for the current transient on a rough electrode which shows three times regions: short and long time limits and the transition region between them. The expressions for these time ranges are exploited to extract morphological information about the surface roughness. In the short and long time regimes, we extract information regarding various morphological features like the roughness factor, average roughness, curvature, correlation length, dimensionality of roughness, and polynomial approximation for the correlation function. The formulas for the surface structure factors (the measure of surface roughness) of rough surfaces in terms of measured reversible and diffusion-limited current transients are also obtained. Finally, we explore the feasibility of making such measurements.

Experimental study on the microstructure and nanomechanical properties of the wing membrane of dragonfly

Detailed investigations on the microstructure and the mechanical properties of the wing membrane of the dragonfly are carried out. It is found that in the direction of the thickness the membrane was divided into three layers rather than a single entity as traditionally considered, and on the surfaces the membrane displays a random distribution rough microstructure that is composed of numerous nanometer scale columns coated by the cuticle wax secreted. The characteristics of the surface structure are measured and described. The mechanical properties of the membranes taken separately from the wings of live and dead dragonflies are investigated by the nanoindentation technique. The Young's moduli obtained here are approximately two times greater than the previous result, and the reasons that yield the difference are discussed.

Microstructure and nanomechanical properties of the wing membrane of dragonfly

Detailed investigations on the microstructure and the mechanical properties of the wing membrane of the dragonfly were carried out. It was found that in the direction of the thickness the membrane was divided into three layers rather than as traditionally considered as a single entity, and on the surfaces the membrane displayed a random distribution rough microstructure that was composed of numerous nanometer scale columns coated by the cuticle wax secreted. The characteristics of the surfaces were accurately measured and a statistical radial distribution function of the columns was presented to describe the structural properties of the surfaces. Based on the surface microstructure, the mechanical properties of the membranes taken separately from the wings of living and dead dragonflies were investigated by the nanoindentation technique. The Young's moduli obtained here are approximately two times greater than the previous result, and the reasons that yield the difference are discussed. (C) 2007 Elsevier B.V. All rights reserved.

不同退火气氛下γ-LiAlO2形貌和结构研究

研究了温度梯度法生长的γ-LiAlO2晶体在1100℃下富Li气氛和空气中退火处理后的表面形貌、表面结构以及吸收光谱。发现γ-LiAlO2晶体的抛光面在1100℃空气中退火后变为粗糙面，X射线衍射(XRD)分析表明此粗糙面为单相的LiAl5O8。而γ-LiAlO2晶体的抛光面在1100℃富Li气氛中处理后几乎没有变化。同时对不同气氛下热处理的γ-LiAlO2晶体进行了光谱分析，确认了晶片中196nm的吸收峰是由Li空位引起的。

Laser-induced damage of Ti O2 Si O2 high reflector at 1064 nm

A high laser-induced damage threshold (LIDT) TiO2/SiO2 high reflector (HR) at 1064 nm is deposited by e-beam evaporation. The HR is characterized by optical properties, surface, and cross section structure. LIDT is tested at 1064 nm with a 12 ns laser pulse in the one-on-one mode. Raman technique and scanning electron Microscope are used to analyze the laser-induced modification of HR. The possible damage mechanism is discussed. It is found that the LIDT of HR is influenced by the nanometer precursor in the surface, the intrinsic absorption of film material, the compactness of the cross section and surface structure, and the homogeneity of TiO2 layer. Three typical damage morphologies such as flat-bottom pit, delamination, and plasma scald determine well the nanometer defect initiation mechanism. The laser-induced crystallization consists well with the thermal damage nature of HR. (C) 2008 American Institute of Physics.

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Atomic force microscopy (AFM) and scanning electron microscopy (SEM) with cathodoluminescence (CL) were performed on exactly the same defects in a blue-emitting InGaN/GaN multiple quantum well (QW) sample enabling the direct correlation of the morphology of an individual defect with its emission properties. The defects in question are observed in AFM and SEM as a trench partially or fully enclosing a region of the QW having altered emission properties. Their sub-surface structure has previously been shown to consist of a basal plane stacking fault (BSF) in the plane of the QW stack, and a stacking mismatch boundary (SMB) which opens up into a trench at the sample surface. In CL, the material enclosed by the trench may emit more or less intensely than the surrounding material, but always exhibits a redshift relative to the surrounding material. A strong correlation exists between the width of the trench and both the redshift and the intensity ratio, with the widest trenches surrounding regions which exhibit the brightest and most redshifted emission. Based on studies of the evolution of the trench width with the number of QWs from four additional MQW samples, we conclude that in order for a trench defect to emit intense, strongly redshifted light, the BSF must be formed in the early stages of the growth of the QW stack. The data suggest that the SMB may act as a non-radiative recombination center. © 2013 American Institute of Physics.

Influence of dislocation stress field on distribution of quantum dots

InAs quantum dots (QDs) were grown on In0.15Ga0.85As strained layers by molecular beam epitaxy on GaAs (0 0 1) substrates. Atomic force microscopy and transmission electron microscopy study have indicated that In0.15Ga0.85As ridges and InAs QDs formed at the inclined upside of interface misfit dislocations (MDs). By testifying the MDs are mixed 60 degrees dislocations and calculating the surface stress over them when they are 12-180 nm below the surface, we found the QDs prefer nucleating on the side with tensile stress of the MDs and this explained why the ordering of QDs is weak when the InGaAs layer is relatively thick. (c) 2006 Elsevier B.V. All rights reserved.

Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film

Silicon-rich silicon oxide (SRSO) films are prepared by plasma-enhanced chemical vapor deposition method at the substrate temperature of 200degreesC. The effect of rapid thermal annealing and hydrogen plasma treatment on tire microstructure and light-emission of SRSO films are investigated in detail using micro-Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectra. It is found that the phase-separation degree of the films decreases with increasing annealing temperature from 300 to 600degreesC, while it increases with increasing annealing temperature from 600 to 900degreesC. The light-emission of the films are enhanced with increasing annealing temperature up to 500degreesC, while it is rapidly reduced when the annealing temperature exceeds 600degreesC. The peak position of the PL spectrum blueshifts by annealing at the temperature of 300degreesC, then it red-shifts with further raising annealing temperature. The following hydrogen plasma treatment results in a disproportionate increase of the PL intensity and a blueshift or redshift of the peak positions, depending on the pristine annealing temperature. It is thought that the size of amorphous silicon clusters, surface structure of the clusters and the distribution of hydrogen in the films can be changed during the annealing procedure. The results indicate that not only cluster size but also surface state of the clusters plays an important role in the determination of electronic structure of the amorphous silicon cluster and recombination process of light-generated carriers.

In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates

Self-assembled InxGa1-xAs quantum dots (QDs) on (311)A/B GaAs surfaces have been grown by molecular beam epitaxy (MBE). Spontaneously ordering alignment of InxGa1-xAs with lower In content around 0.3 have been observed. The direction of alignment orientation of the QDs formation differs from the direction of misorientation of the (311)B surface, and is strongly dependent upon the In content x. The ordering alignment become significantly deteriorated as the In content is increased to above 0.5 or as the QDs are formed on (100) or (311)A substrates. (C) 1999 Elsevier Science B.V. All rights reserved.

Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)

We present photoelectron spectroscopic and low energy electron diffraction measurements of water adsorption on flat Si samples of the orientations (001), (115), (113), (5,5,12) and (112) as well as on curved samples covering continuously the ranges (001)-(117) and (113)-(5,5,12)-(112). On all orientations, water adsorption is dissociative (OH and H) and non-destructive. On Si(001) the sticking coefficient S and the saturation coverage Theta(sat) are largest. On Si(001) and for small miscuts in the [110]-azimuth, S is constant nearly up to saturation which proves that the kinetics involves a weakly bound mobile precursor state. For (001)-vicinals with high miscut angles (9-13 degrees), the step structure breaks down, the precursor mobility is affected and the adsorption kinetics changed. On (115), (113), (5,5,12) and (112), the values of S and Theta(sat) are smaller which indicates that not all sites are able to dissociate and bind water. For (113) the shape of the adsorption curves Theta versus exposure shows the existence of two adsorption processes, one with mobile precursor kinetics and one with Langmuir-like kinetics. On (5,5,12), two processes with mobile precursor kinetics are observed which are ascribed to adsorption on different surface regions within the large surface unit cell. From the corresponding values of S and Theta(sat), data for structure models are deduced. (C) 1997 Elsevier Science B.V.