The Effect of Inlet Guide Vanes on Inlet Flow Distortion Transfer and Transonic Fan Stability

An investigation was carried out into the effects of variable inlet guide vanes (VIGVs) on the performance and stability margin of a transonic fan in the presence of inlet flow distortion. The study was carried out using computational fluid dynamics (CFD) and validated with experimental data. The capability of CFD to predict the changes in performance with or without VIGVs in the presence of an inlet flow distortion is assessed. Results show that the VIGVs improve the performance and stability margin and do so by reducing the amount of swirl at inlet to the rotor component of the fan.

An experimental study of loss sources in a fan operating with continuous inlet stagnation pressure distortion

The viability of Boundary Layer Ingesting (BLI) engines for future aircraft propulsion is dependent on the ability to design robust, efficient engine fan systems for operation with continuously distorted inlet flow. A key step in this process is to develop an understanding of the specific mechanisms by which an inlet distortion affects the performance of a fan stage. In this paper, detailed full-annulus experimental measurements of the flow field within a low-speed fan stage operating with a continuous 60-degree inlet stagnation pressure distortion are presented. These results are used to describe the three-dimensional fluid mechanics governing the interaction between the fan and the distortion and to make a quantitative assessment of the impact on loss generation within the fan. A 5.3 percentage point reduction in stage total-to-total efficiency is observed as a result of the inlet distortion. The reduction in performance is shown to be dominated by increased loss generation in the rotor due to off-design incidence values at its leading edge, an effect which occurs throughout the annulus despite the localised nature of the inlet distortion. Increased loss generation in the stator row is also observed due to flow separations that are shown to be caused by whirl angle distortion at rotor exit. By addressing these losses, it should be possible to achieve improved efficiency in BLI fan systems. Copyright © 2012 by ASME.

An experimental study of loss sources in a fan operating with continuous inlet stagnation pressure distortion

The viability of boundary layer ingesting (BLI) engines for future aircraft propulsion is dependent on the ability to design robust, efficient engine fan systems for operation with continuously distorted inlet flow. A key step in this process is to develop an understanding of the specific mechanisms by which an inlet distortion affects the performance of a fan stage. In this paper, detailed full-annulus experimental measurements of the flow field within a low-speed fan stage operating with a continuous 60 deg inlet stagnation pressure distortion are presented. These results are used to describe the three-dimensional fluid mechanics governing the interaction between the fan and the distortion and to make a quantitative assessment of the impact on loss generation within the fan. A 5.3 percentage point reduction in stage total-to-total efficiency is observed as a result of the inlet distortion. The reduction in performance is shown to be dominated by increased loss generation in the rotor due to off-design incidence values at its leading edge, an effect that occurs throughout the annulus despite the localized nature of the inlet distortion. Increased loss in the stator row is also observed due to flow separations that are shown to be caused by whirl angle distortion at rotor exit. By addressing these losses, it should be possible to achieve improved efficiency in BLI fan systems. © 2013 by ASME.

Effects of high-order laser distortion products in radio over free-space optical links

RoFSO links are found to be susceptible to high-order laser distortion making conventional SFDR ineffective as a performance indicator. For the first time, peak input power is demonstrated as a service-independent bound on dynamic range. © OSA/ CLEO 2011.

Pump-Suppressed Nondegenerate Four-Wave Mixing in a Highly Nonlinear Photonic Crystal Fiber Sagnac Loop

We propose a configuration for suppressing pumps in a broad- and flat-hand tunable nondegenerate four-wave mixing (FWM) wavelength converter. The signal and pumps are coupled into a highly nonlinear photonic crystal fiber symmetrical Sagnac loop. After the FWM wavelength conversion in the loop, the idler is separated from the pumps without a filter. In our experiment, a flat wavelength conversion bandwidth of 36 rim, conversion efficiency of-11 dB., pump-to-signal suppression ratio of 48 dB, and idler-to-pump suppression ratio of 15 dB are achieved.

Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling

Rutherford backscattering and channeling have been used to characterize the structure of a GaN layer grown on a Si(111) substrate. The results show that a 1.26 mum GaN epitaxial layer with a rather abrupt interface and a good crystalline quality (chi(min)=3.4%) can be grown on a Si(111) substrate. Using the channeling angular scan around an off-normal <1 (2) over bar 13> axis in the {10 (1) over bar0} plane of the GaN layer, the tetragonal distortion e(T), which is caused by the elastic strain in the epilayer, can be determined. Moreover, the depth dependence of the e(T) can be obtained using this technique. A fully relaxed (e(T)=0) GaN layer for a thickness <2.8 mum is expected. (C) 2002 American Institute of Physics.

Distortion management of SBS slow light in a single-mode optical fiber by optimization of broadband SBS gain spectrum

SPIE

Correlation of electrical and optical properties in dually Cd+ and N+ ion-implanted GaAs

Cd in GaAs is an acceptor atom and has the largest atomic diameter among the four commonly-used group-II shallow acceptor impurities (Be, Mg, Zn and Cd). The activation energy of Cd (34.7 meV) is also the largest one in the above four impurities, When Cd is doped by ion implantation, the effects of lattice distortion are expected to be apparently different from those samples ion-implanted by acceptor impurities with smaller atomic diameter. In order to compensate the lattice expansion and simultaneously to adjust the crystal stoichiometry, dual incorporation of Cd and nitrogen (N) was carried out into GaAs, Ion implantation of Cd was made at room temperature, using three energies (400 keV, 210 keV, 110 keV) to establish a flat distribution, The spatial profile of N atoms was adjusted so as to match that of Cd ones, The concentration of Cd and N atoms, [Cd] and [N] varied between 1 x 10(16) cm(-3) and 1 x 10(20) cm(-3). Two type of samples, i.e., solely Cd+ ion-implanted and dually (Cd+ + N+) ion-implanted with [Cd] = [N] were prepared, For characterization, Hall effects and photoluminescence (PL) measurements were performed at room temperature and 2 K, respectively. Hall effects measurements revealed that for dually ion-implanted samples, the highest activation efficiency was similar to 40% for [Cd] (= [N])= 1 x 10(18) cm(-3). PL measurements indicated that [g-g] and [g-g](i) (i = 2, 3, alpha, beta,...), the emissions due to the multiple energy levels of acceptor-acceptor pairs are significantly suppressed by the incorporation of N atoms, For [Cd] = [N] greater than or equal to 1 x 10(19) cm(-3), a moderately deep emission denoted by (Cd, N) is formed at around 1.45-1.41 eV. PL measurements using a Ge detector indicated that (Cd, N) is increasingly red-shifted in energy and its intensity is enhanced with increasing [Cd] = [N], (Cd, N) becomes a dominant emission for [Cd] = [N] = 1 x 10(20) cm(-3). The steep reduction of net hole carrier concentration observed for [Cd]/[N] less than or equal to 1 was ascribed to the formation of (Cd, N) which is presumed to be a novel radiative complex center between acceptor and isoelectronic atoms in GaAs.

A 10-bit 50-MS/s sample-and-hold circuit with low distortion sampling switches

A fully-differential switched-capacitor sample-and-hold (S/H) circuit used in a 10-bit 50-MS/s pipeline analog-to-digital converter (ADC) was designed and fabricated using a 0.35-μm CMOS process. Capacitor fliparound architecture was used in the S/H circuit to lower the power consumption. In addition, a gain-boosted operational transconductance amplifier (OTA) was designed with a DC gain of 94 dB and a unit gain bandwidth of 460 MHz at a phase margin of 63 degree, which matches the S/H circuit. A novel double-side bootstrapped switch was used, improving the precision of the whole circuit. The measured results have shown that the S/H circuit reaches a spurious free dynamic range (SFDR) of 67 dB and a signal-to-noise ratio (SNR) of 62.1 dB for a 2.5 MHz input signal with 50 MS/s sampling rate. The 0.12 mm~2 S/H circuit operates from a 3.3 V supply and consumes 13.6 mW.

An Ameliorated Phase Generated Carrier Demodulation Algorithm With Low Harmonic Distortion and High Stability

A novel ameliorated phase generated carrier (PGC) demodulation algorithm based on arctangent function and differential-self-multiplying (DSM) is proposed in this paper. The harmonic distortion due to nonlinearity and the stability with light intensity disturbance (LID) are investigated both theoretically and experimentally. The nonlinearity of the PGC demodulation algorithm has been analyzed and an analytical expression of the total-harmonic-distortion (THD) has been derived. Experimental results have confirmed the low harmonic distortion of the ameliorated PGC algorithm as expected by the theoretical analysis. Compared with the traditional PGC-arctan and PGC-DCM algorithm, the ameliorated PGC algorithm has a much lower THD as well as a better signal-to-noise-and-distortion (SINAD). A THD of below 0.1% and a SINAD of 60 dB have been achieved with PGC modulation depth (value) ranges from 1.5 to 3.5 rad. The stability performance with LID has also been studied. The ameliorated PGC algorithm has a much higher stability than the PGC-DCM algorithm. It can keep stable operations with LID depth as large as 26.5 dB and LID frequency as high as 1 kHz. The system employing the ameliorated PGC demodulation algorithm has a minimum detectable phase shift of 5 mu rad/root Hz @ 1 kHz, a large dynamic range of 120 dB @ 100 Hz, and a high linearity of better than 99.99%.

Geometric Distortion Insensitive Image Watermarking in Affine Covariant Regions

Feature-based image watermarking schemes, which aim to survive various geometric distortions, have attracted great attention in recent years. Existing schemes have shown robustness against rotation, scaling, and translation, but few are resistant to cropping, nonisotropic scaling, random bending attacks (RBAs), and affine transformations. Seo and Yoo present a geometrically invariant image watermarking based on affine covariant regions (ACRs) that provide a certain degree of robustness. To further enhance the robustness, we propose a new image watermarking scheme on the basis of Seo's work, which is insensitive to geometric distortions as well as common image processing operations. Our scheme is mainly composed of three components: 1) feature selection procedure based on graph theoretical clustering algorithm is applied to obtain a set of stable and nonoverlapped ACRs; 2) for each chosen ACR, local normalization, and orientation alignment are performed to generate a geometrically invariant region, which can obviously improve the robustness of the proposed watermarking scheme; and 3) in order to prevent the degradation in image quality caused by the normalization and inverse normalization, indirect inverse normalization is adopted to achieve a good compromise between the imperceptibility and robustness. Experiments are carried out on an image set of 100 images collected from Internet, and the preliminary results demonstrate that the developed method improves the performance over some representative image watermarking approaches in terms of robustness.

Radiation crosslinking of biodegradable poly(butylene succinate) and its heat distortion behavior

Poly(butylene succinate), (PBS1) was irradiated with Co-60-gamma radiation at various temperatures. The gel fraction of PBS I irradiated at molten state (100 degreesC) is higher than that of the samples irradiated at lower temperatures with the same dose. Two-step irradiation ( irradiation at room temperature and then irradiation at 100 degreesC) yielded the highest gel content as compared with other treatment conditions. It is due to the network structure formed by preirradiation at room temperature and further irradiation at molten state reduce degradation of PBS1. PBS1 prepared by the two-step irradiation was improved in heat distortion resistance because of its higher gel content. Unirradiated PBS1 sheets broke immediately at 110 degreesC. On the other hand, for samples (gel fraction 50%) irradiated by asing the two-step method, they did not break even at 130 degreesC for 200 min.