Protein three-dimensional structural databases: Domains, structurally aligned homologues and superfamilies

This paper reports the availability of a database of protein structural domains (DDBASE), an alignment database of homologous proteins (HOMSTRAD) and a database of structurally aligned superfamilies (CAMPASS) on the World Wide Web (WWW). DDBASE contains information on the organization of structural domains and their boundaries; it includes only one representative domain from each of the homologous families. This database has been derived by identifying the presence of structural domains in proteins on the basis of inter-secondary structural distances using the program DIAL [Sowdhamini & Blundell (1995), Protein Sci. 4, 506-520]. The alignment of proteins in superfamilies has been performed on the basis of the structural features and relationships of individual residues using the program COMPARER [Sali & Blundell (1990), J. Mol. Biol. 212, 403-428]. The alignment databases contain information on the conserved structural features in homologous proteins and those belonging to superfamilies. Available data include the sequence alignments in structure-annotated formats and the provision for viewing superposed structures of proteins using a graphical interface. Such information, which is freely accessible on the WWW, should be of value to crystallographers in the comparison of newly determined protein structures with previously identified protein domains or existing families.

Structurally programmed capillary folding of carbon nanotube assemblies.

We demonstrate the fabrication of horizontally aligned carbon nanotube (HA-CNT) networks by spatially programmable folding, which is induced by self-directed liquid infiltration of vertical CNTs. Folding is caused by a capillary buckling instability and is predicted by the elastocapillary buckling height, which scales with the wall thickness as t(3/2). The folding direction is controlled by incorporating folding initiators at the ends of the CNT walls, and the initiators cause a tilt during densification which precedes buckling. By patterning these initiators and specifying the wall geometry, we control the dimensions of HA-CNT patches over 2 orders of magnitude and realize multilayered and multidirectional assemblies. Multidirectional HA-CNT patterns are building blocks for custom design of nanotextured surfaces and flexible circuits.

Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs

We have carried out a theoretical study of double-delta-doped InAlAs/InGaAs/InP high electron mobility transistor (HEMT) by means of the finite differential method. The electronic states in the quantum well of the HEMT are calculated self-consistently. Instead of boundary conditions, initial conditions are used to solve the Poisson equation. The concentration of two-dimensional electron gas (2DEG) and its distribution in the HEMT have been obtained. By changing the doping density of upper and lower impurity layers we find that the 2DEG concentration confined in the channel is greatly affected by these two doping layers. But the electrons depleted by the Schottky contact are hardly affected by the lower impurity layer. It is only related to the doping density of upper impurity layer. This means that we can deal with the doping concentrations of the two impurity layers and optimize them separately. Considering the sheet concentration and the mobility of the electrons in the channel, the optimized doping densities are found to be 5 x 10(12) and 3 x 10(12) cm(-2) for the upper and lower impurity layers, respectively, in the double-delta-doped InAlAs/InGaAs/InP HEMTs.

Self-consistent analysis of AlSb/InAs high electron mobility transistor structures

The influences of channel layer width, spacer layer width, and delta-doping density on the electron density and its distribution in the AlSb/InAs high electron mobility transistors (HEMTs) have been studied based on the self-consistent calculation of the Schrodinger and Poisson equations with both the strain and nonparabolicity effects being taken into account. The results show that, having little influence on the total two dimensional electron gas (2DEG) concentration in the channel, the HEMT's channel layer width has some influence on the electron mobility, with a channel as narrow as 100-130 angstrom being more beneficial. For the AlSb/InAs HEMT with a Te delta-doped layer, the 2DEG concentration as high as 9.1 X 10(12) cm(-2) can be achieved in the channel by enhancing the delta-doping concentration without the occurrence of the parallel conduction. When utilizing a Si delta-doped InAs layer as the electron-supplying layer of the AlSb/InAs HEMT, the effect of the InAs donor layer thickness is studied on the 2DEG concentration. To obtain a higher 2DEG concentration in the channel, it is necessary to use an InAs donor layer as thin as 4 monolayer. To test the validity of our calculation, we have compared our theoretical results (2DEG concentration and its distribution in different sub-bands of the channel) with the experimental ones done by other groups and show that our theoretical calculation is consistent with the experimental results.

SELF-CONSISTENT TREATMENT OF 3-DIMENSIONAL - 2-DIMENSIONAL AND 2-DIMENSIONAL - 2-DIMENSIONAL RESONANT-TUNNELING IN DOUBLE-BARRIER STRUCTURES

By using a transfer-matrix method on the basis of two-dimensional (2D) Bloch sums in accordance with a tight-binding scheme, a self-consistent calculation on the resonant tunneling in asymmetric double-barrier structures is presented, in which contributions to resonant tunneling from both three-dimensional (3D) electrons in the contacts and 2D electrons in the spacer or accumulation layers are considered simultaneously. The charge buildup effect on the current versus voltage (I-V) curves is evaluated systematically, showing quantitatively how it results in the I-V bistability and enhanced differences between I-V curves for positive and negative bias in an asymmetric double-barrier structure. Special attention is focused on the interaction between 3D-2D and 2D-2D resonant-tunneling processes, including the suppression of 2D-2D resonant tunneling by the charge buildup in the well accompanying the 3D-2D resonant tunneling. The effects of the emitter doping condition (doping concentration, spacer thickness) on the presence of two types of quasi-2D levels in the emitter accumulation layers, and on the formation of a potential bulge in the emitter region, are discussed in detail in relation to the tunneling process.