The influence of substrate on the properties of Er2O3 films grown by magnetron sputtering

The structural properties and the room temperature luminescence of Er2O3 thin films deposited by RF magnetron sputtering have been studied. Films characterized by good morphological properties have been obtained by using a SiO2 interlayer between the film and the Si substrate. The evolution of the properties of the Er2O3 films due to rapid thermal annealing processes in O2 ambient performed at temperatures in the range 800-1200 °C has been investigated in details. The existence of well-defined annealing conditions (temperature of 1100 °C or higher) allowing to avoid the occurrence of extensive chemical reactions with the oxidized substrate has been demonstrated and an increase of the photoluminescence (PL) intensity by about a factor of 40 with respect to the as deposited material has been observed. The enhanced efficiency of the photon emission process has been correlated with the longer lifetime of the PL signal. The same annealing processes are less effective when Er2O3 is deposited on Si. In this latter case interfacial reactions and pit formation occur, leading to a material characterized by stronger non-radiative phenomena that limit the PL efficiency. © 2006 Elsevier B.V. All rights reserved.

High-density remote plasma sputtering of high-dielectric-constant amorphous hafnium oxide films

Hafnium oxide (HfOx) is a high dielectric constant (k) oxide which has been identified as being suitable for use as the gate dielectric in thin film transistors (TFTs). Amorphous materials are preferred for a gate dielectric, but it has been an ongoing challenge to produce amorphous HfOx while maintaining a high dielectric constant. A technique called high target utilization sputtering (HiTUS) is demonstrated to be capable of depositing high-k amorphous HfOx thin films at room temperature. The plasma is generated in a remote chamber, allowing higher rate deposition of films with minimal ion damage. Compared to a conventional sputtering system, the HiTUS technique allows finer control of the thin film microstructure. Using a conventional reactive rf magnetron sputtering technique, monoclinic nanocrystalline HfOx thin films have been deposited at a rate of ∼1.6nmmin-1 at room temperature, with a resistivity of 1013Ωcm, a breakdown strength of 3.5MVcm-1 and a dielectric constant of ∼18.2. By comparison, using the HiTUS process, amorphous HfOx (x=2.1) thin films which appear to have a cubic-like short-range order have been deposited at a high deposition rate of ∼25nmmin-1 with a high resistivity of 1014Ωcm, a breakdown strength of 3MVcm-1 and a high dielectric constant of ∼30. Two key conditions must be satisfied in the HiTUS system for high-k HfOx to be produced. Firstly, the correct oxygen flow rate is required for a given sputtering rate from the metallic target. Secondly, there must be an absence of energetic oxygen ion bombardment to maintain an amorphous microstructure and a high flux of medium energy species emitted from the metallic sputtering target to induce a cubic-like short range order. This HfOx is very attractive as a dielectric material for large-area electronic applications on flexible substrates. A remote plasma sputtering process (high target utilization sputtering, HiTUS) has been used to deposit amorphous hafnium oxide with a very high dielectric constant (∼30). X-ray diffraction shows that this material has a microstructure in which the atoms have a cubic-like short-range order, whereas radio frequency (rf) magnetron sputtering produced a monoclinic polycrystalline microstructure. This is correlated to the difference in the energetics of remote plasma and rf magnetron sputtering processes. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of crystalline quality on the ultraviolet emission and electrical properties of the ZnO films deposited by magnetron sputtering

The ZnO films were deposited on c-plane sapphire, Si (0 0 1) and MgAl2O4 (1 1 1) substrates in pure Ar ambient at different substrate temperatures ranging from 400 to 750 degrees C by radio frequency magnetron sputtering. X-ray diffraction, photoluminescence and Hall measurements were used to evaluate the growth temperature and the substrate effects on the properties of ZnO films. The results show that the crystalline quality of the ZnO films improves with increasing the temperature up to 600 degrees C, the crystallinity of the films is degraded as the growth temperature increasing further, and the ZnO film with the best crystalline quality is obtained on sapphire at 600 degrees C. The intensity of the photoluminescence and the electrical properties strongly depend on the crystalline quality of the ZnO films. The ZnO films with the better crystallinity have the stronger ultraviolet emission, the higher mobility and the lower residual carrier concentration. The effects of crystallinity on light emission and electrical properties, and the possible origin of the n-type conductivity of the undoped ZnO films are also discussed. (C) 2009 Elsevier B. V. All rights reserved.

Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films

Er-doped silicon-rich silicon nitride (SRN) films were deposited on silicon substrate by an RF magnetron reaction sputtering system. After high temperature annealing, the films show intense photoluminescence in both the visible and infrared regions. Besides broad-band luminescence centered at 780 nm which originates from silicon nanocrystals, resolved peaks due to transitions from all high energy levels up to ~2H_(11/2) to the ground state of Er~(3+) are observed. Raman spectra and HRTEM measurements have been performed to investigate the structure of the films, and possible excitation processes are discussed.

Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the samples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400 degrees C, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photoluminescence spectra, and the origin of blue emission was investigated.

Dynamique de croissance par plasma RF magnétron des couches minces à base d’oxyde de zinc

Le but de cette thèse était d’étudier la dynamique de croissance par pulvérisation par plasma RF magnétron des couches minces à base d’oxyde de zinc destinées à des applications électroniques, optoélectroniques et photoniques de pointe. Dans ce contexte, nous avons mis au point plusieurs diagnostics permettant de caractériser les espèces neutres et chargées dans ce type de plasmas, notamment la sonde électrostatique, la spectroscopie optique d’émission et d’absorption, ainsi que la spectrométrie de masse. Par la suite, nous avons tenté de corréler certaines caractéristiques physiques de croissance des couches de ZnO, en particulier la vitesse de dépôt, aux propriétés fondamentales du plasma. Nos résultats ont montré que l’éjection d’atomes de Zn, In et O au cours de la pulvérisation RF magnétron de cibles de Zn, ZnO et In2O3 n’influence que très peu la densité d’ions positifs (et donc la densité d’électrons en supposant la quasi-neutralité) ainsi que la fonction de distribution en énergie des électrons (populations de basse et haute énergie). Cependant, le rapport entre la densité d’atomes d’argon métastables (3P2) sur la densité électronique décroît lorsque la densité d’atomes de Zn augmente, un effet pouvant être attribué à l’ionisation des atomes de Zn par effet Penning. De plus, dans les conditions opératoires étudiées (plasmas de basse pression, < 100 mTorr), la thermalisation des atomes pulvérisés par collisions avec les atomes en phase gazeuse demeure incomplète. Nous avons montré que l’une des conséquences de ce résultat est la présence d’ions Zn+ suprathermiques près du substrat. Finalement, nous avons corrélé la quantité d’atomes de Zn pulvérisés déterminée par spectroscopie d’émission avec la vitesse de dépôt d’une couche mince de ZnO mesurée par ellipsométrie spectroscopique. Ces travaux ont permis de mettre en évidence que ce sont majoritairement les atomes de Zn (et non les espèces excitées et/ou ioniques) qui gouvernent la dynamique de croissance par pulvérisation RF magnétron des couches minces de ZnO.

Effect of Substrate Temperature on the Structural and Luminescent Characteristics of RF-Magnetron-Sputtered ZnGa2O4:Dy3+ Thin Films

ZnGa2O4:Dy3+ phosphor thin films were deposited on quartz substrates by radio frequency rf magnetron sputtering and the effect of substrate temperature on its structural and luminescent properties was investigated. Polycrystalline film could be deposited even at room temperature. The crystalline behavior, Zn/Ga ratio, and surface morphology of the films were found to be highly sensitive to substrate temperature. Under UV illumination, the as-deposited films at and above 300°C gave white luminescence even without any postdeposition treatments. The photoluminescent PL emission can be attributed to the combined effect of multicolor emissions from the single luminescence center Dy3+ via host-sensitization. Maximum PL emission intensity was observed for the film deposited at 600°C, and the CIE chromaticity coordinates of the emission were determined to be x,y = 0.34, 0.31 .

RF magnetron sputtered perovskite oxide electrodes for Ferroelectric RAM

The main objective of this thesis work is to optimize the growth conditions for obtaining crystalline and conducting Lao.5Sro.5Co03 (LSCO) and Lao.5Sro.5Coo.5.5Nio.5O3 (LSCNO) thin films at low processing temperatures. The films are prepared by radio frequency magnetron sputtering under various deposition conditions. The thin films were used as electrodes for the fabrication of ferroelectric capacitors using BaO.7SrO.3 Ti03 (BST) and PbZro.52 Tio.4803 (PZT). The structural and transport properties of the La1_xSrxCo03 and Lao.5Sro.5Co1_xNix03 are also investigated. The characterization of the bulk and the thin films were performed using different tools. A powder X-ray diffractometer was used to analyze the crystalline nature of the material. The transport properties were investigated by measuring the temperature dependence of resistivity using a four probe technique. The magnetoresistance and thermoelectric power were also used to investigate the transport properties. Atomic force microscope was used to study the surface morphology and thin film roughness. The ferroelectric properties of the capacitors were investigated using RT66A ferroelectric tester.

Studies on Laser Induced and RF Sputtered Plasma using Optical Emission Spectroscopy and Langmuir Probe

The main objective of the present study is to understand different mechanisms involved in the production and evolution of plasma by the pulsed laser ablation and radio frequency magnetron sputtering. These two methods are of particular interest, as these are well accomplished methods used for surface coatings, nanostructure fabrications and other thin film devices fabrications. Material science researchers all over the world are involved in the development of devices based on transparent conducting oxide (TCO) thin films. Our laboratory has been involved in the development of TCO devices like thin film diodes using zinc oxide (ZnO) and zinc magnesium oxide (ZnMgO), thin film transistors (TFT's) using zinc indium oxide and zinc indium tin oxide, and some electroluminescent (EL) devices by pulsed laser ablation and RF magnetron sputtering.In contrast to the extensive literature relating to pure ZnO and other thin films produced by various deposition techniques, there appears to have been relatively little effort directed towards the characterization of plasmas from which such films are produced. The knowledge of plasma dynamics corresponding to the variations in the input parameters of ablation and sputtering, with the kind of laser/magnetron used for the generation of plasma, is limited. To improve the quality of the deposited films for desired application, a sound understanding of the plume dynamics, physical and chemical properties of the species in the plume is required. Generally, there is a correlation between the plume dynamics and the structural properties of the films deposited. Thus the study of the characteristics of the plume contributes to a better understanding and control of the deposition process itself. The hydrodynamic expansion of the plume, the composition, and SIze distribution of clusters depend not only on initial conditions of plasma production but also on the ambient gas composition and pressure. The growth and deposition of the films are detennined by the thermodynamic parameters of the target material and initial conditions such as electron temperature and density of the plasma.For optimizing the deposition parameters of various films (stoichiometric or otherwise), in-situ or ex-situ monitoring of plasma plume dynamics become necessary for the purpose of repeatability and reliability. With this in mind, the plume dynamics and compositions of laser ablated and RF magnetron sputtered zinc oxide plasmas have been investigated. The plasmas studied were produced at conditions employed typically for the deposition of ZnO films by both methods. Apart from this two component ZnO plasma, a multi-component material (lead zirconium titanate) was ablated and plasma was characterized.

The optical absorption edge of nanocrystalline Ga(1-x)Mn(x)N films deposited by reactive sputtering

We have focused on the optical absorption edge of nanocrystalline Ga(1-x)Mn(x)N (0.00 <= x <= 0.18) films deposited by reactive RF magnetron sputtering. The films obtained are nanocrystalline with grain sizes of about 25 nm, having wurtzite structure and strong orientation texture in the c-axis direction. The optical characterizations of the absorption edges were obtained in the 190-2600 nm spectral range. The increase of the Mn content causes an increase of the absorption coefficient which can be clearly noticed at low energies, and a quasi-linear decrease of the optical gap. Broad absorption bands observed around similar to 1.3 and similar to 2.2 eV were associated with transitions between the Mn acceptor level and the valence and conduction bands, respectively. The observed changes in the optical properties due to the Mn incorporation observed in these nanocrystalline films are similar to those reported for ferromagnetic GaMnN single-crystal films.

Nanocrystalline Ga1-xMnxN films grown by reactive sputtering

The growth of nanocrystalline Ga1-zMnxN (0.00 <= x <= 0.18) films grown by reactive RF-magnetron sputtering is focused here for the first time. The films were grown in a N-2 atmosphere by co-sputtering technique using a Ga target covered with small pieces of Mn onto c-GaAs (10 0), c-Si (10 0) and amorphous SiO2 substrates maintained at 500 K. Scanning electron microscopy and X-ray diffraction (XRD) experiments did not show any evidence for Mn segregation within the studied composition range. EDX measurements show that the Mn concentration is increased monotonically with the fraction of the target area covered by Mn. The XRD characterization show that the films are nanocrystalline, the crystallites having mean grain sizes in the 15-19 nm range and wurtzite structure with preferential growth orientation along the c-axis direction. The lattice parameters of alpha-GaN (a and c) increase practically linearly with the increase of Mn incorporation. The changes in the structural properties of our films due to the Mn incorporation are similar to those that occur in ferromagnetic GaMnN single-crystal films. (c) 2006 Elsevier B.V. All rights reserved.

Efeitos estruturais e ópticos da incorporação de Mn em filmes nanocristalinos de 'Ga IND. 1-x Mn IND. xAs' preparados por sputtering

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Efeitos estruturais e ópticos da incorporação de Mn em filmes nanocristalinos de 'GA IND.1-x'MN IND.XN' preparados por sputtering reativo

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Preparação de filmes policristalinos de GaN pela técnica de sputtering reativo a baixas temperaturas de substrato

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Influência da temperatura e do tipo de substrato em filmes de GaN depositados por magnetron sputtering reativo

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)