Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques

The conduction-band offset Delta E-C has been determined for a molecular beam epitaxy grown GaAs/In0.2Ga0.8As single quantum-well structure, by measuring the capacitance-voltage (C - V) profiling, taking into account a correction for the interface charge density, and the capacitance transient resulting from thermal emission of carriers from the quantum well, respectively. We found that Delta E-C = 0.227 eV, corresponding to about 89% Delta E-g, from the C - V profiling; and Delta E-C = 0.229eV, corresponding to about 89.9% Delta E-g, from the deep-level transient spectroscopy (DLTS) technique. The results suggest that the conduction-band discontinuity Delta E-C obtained from the C-V profiling is in good agreement with that obtained from the DLTS technique. (C) 1998 American Institute of Physics.

DETERMINATION OF THE CONDUCTION-BAND OFFSET OF A SINGLE ALGAAS BARRIER LAYER USING DEEP-LEVEL TRANSIENT SPECTROSCOPY

The tunneling from an AlGaAs confined thin layer to a GaAs layer in the GaAs/Al0.33Ga0.67As/GaAs structure during the trapped electron emission from deep level in the AlGaAs to its conduction band has been observed by deep level transient spectroscopy. With the aid of the tunneling effect, the conduction-band offset DELTAE(c) was determined to be 0.260 eV, corresponding to 63% of DELTAE(g). A calculation was also carried out based on this tunneling model by using the experimental value of DELTAE(c) = E2 - E1 = 0. 260 eV, and good agreement between the experimental and calculated curves is obtained.

TEMPERATURE-DEPENDENCE OF THE LOW-FIELD MOBILITY OF MINIBAND CONDUCTION IN SUPERLATTICES

The existing interpretation of the T-1 temperature dependence of the low-field miniband conduction is derived from certain concepts of conventional band theory for band structures resulting from spatial periodicities commensurable with the dimensionalities of the system. It is pointed out that such concepts do not apply to the case of miniband conduction, where we are dealing with band structures resulting from a one-dimensional periodicity in a three-dimensional system. It is shown that in the case of miniband conduction, the current carriers are distributed continuously over all energies in a sub-band, but only those with energies within the width of the miniband contribute to the current. The T-1 temperature dependence of the low-field mobility is due to the depletion of these current-carrying carriers with the rise of temperature.

SHEAR-DEFORMATION-POTENTIAL CONSTANT OF THE CONDUCTION-BAND MINIMA OF SI - EXPERIMENTAL-DETERMINATION BY THE DEEP-LEVEL CAPACITANCE TRANSIENT METHOD

The shear-deformation-potential constant XI-u of the conduction-band minima of Si has been measured by a method which we called deep-level capacitance transient under uniaxial stress. The uniaxial-stress (F) dependence of the electron emission rate e(n) from deep levels to the split conduction-band minima of Si has been analyzed. Theoretical curves are in good agreement with experimental data for the S0 and S+ deep levels in Si. The values of XI-u obtained by the method are 11.1 +/- 0.3 eV at 148.9 K and 11.3 +/- 0.3 eV at 223.6 K. The analysis and the XI-u values obtained are also valuable for symmetry determination of deep electron traps in Si.

DETERMINATION OF THE X-CONDUCTION-SUBBAND ENERGIES IN TYPE-II GAAS/ALAS/GAAS QUANTUM-WELL BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

Using deep level transient spectroscopy (DLTS) the X conduction-subband energy levels in an AlAs well sandwiched by double GaAs layers were determined. Calculation gives eight subbands in the well with well width of 50 Angstrom. Among them, five levels and the other three remainders are determined by using the large longitudinal electron effective mass m(1)(1.1m(0)) and transverse electron effective mass m(t)(0.19m(0)) at X valley, respectively. Two subbands with the height energies were hardly detectable and the other six ones with lower energies are active in the present DLTS study. Because these six subbands are close to each other, we divided them into three groups. Experimentally, we observed three signals induced from the three groups. A good agreement between the calculation and experiment was obtained. (C) 1995 American Institute of Physics.

Asymmetric heat conduction through a weak link

We study the heat conduction of two nonlinear lattices joined by a weak harmonic link. When the system reaches a steady state, the heat conduction of the system is decided by the tunneling heat flow through the weak link. We present an analytical analysis by the combination of the self-consistent phonon theory and the heat tunneling transport formalism, and then the tunneling heat flow can be obtained. Moreover, the nonequilibrium molecular dynamics simulations are performed and the simulations results are consistent with the analytical predictions.

Dimensional crossover of heat conduction in low dimensions

The dimensional crossover phenomena of heat conduction is studied by a two-dimensional (2D) Fermi-Pasta-Ulam lattice. The 2D divergence law of the thermal conductivity is confirmed by the simulations results. The divergence law of the thermal conductivity will change from the 2D class to 1D class as delta=N-y/N-x decreases, here N-y is the size in transverse direction and N-x in longitude direction. The simulation's results suggest that the dimensional crossover happens in delta(*)-> 0 as N-x ->infinity.

Asymmetric heat conduction in nonlinear lattices

In this Letter, we conduct an extensive study of the two-segment Frenkel-Kontorova model. We show that the rectification effect of the heat flux reported in recent literature is possible only in the weak interfacial coupling limit. The rectification effect will be reversed when the properties of the interface and the system size change. These two types of asymmetric heat conduction are governed by different mechanisms though both are induced by nonlinearity. An intuitive physical picture is proposed to interpret the reversal of the rectification effect. Since asymmetric heat conduction depends critically on the properties of the interface and the system size, it is probably not an easy task to fabricate a thermal rectifier or thermal diode in practice.

Length dependence of electron conduction for oligo(1,4-phenylene ethynylene)s: A conductive probe-atomic force microscopy investigation

The dependence of electron conduction of oligo(1,4-phenylene ethynylene)s (OPEs) on length, terminal group, and main chain structure was examined by conductive probe-atomic force microscopy (CP-AFM) via a metal substrate-molecular wire monolayer-conductive probe junction. The electron transport in the molecular junction was a highest occupied molecule orbital (HOMO)-mediated process following a coherent, non-resonant tunneling mechanism represented by the Simmons equation.

IONIC-CONDUCTION OF A NOVEL COMB POLYMER ELECTROLYTE BASED ON MALEIC-ANHYDRIDE COPOLYMER WITH OLIGO-OXYETHYLENE SIDE-CHAINS

A comb-shaped polymer (BM350) with oligo-oxyethylene side chains of the type -O(CH2CH2O)(7)CH3 was prepared from methyl vinyl ether/maleic anhydride copolymer. Homogeneous amorphous polymer electrolyte complexes were made from the comb polymer and LICF(3)SO(3) by solvent casting from acetone, and their conductivities were measured as a function of temperature and salt concentration. Maximum conductivity close to 5.08 X 10(-5) Scm(-1) was obtained at room temperature and at a [Li]/[EO] ratio of about 0.12. The conductivity which displayed non-Arrhenius behaviour was analyzed using the Vogel-Tammann-Fulcher equation and interpreted on the basis of the configurational entropy model. The results of mid-IR showed that the coordination of Li+ to side chains made the C-O-C band become broader and shift slightly. X-ray photoelectron spectroscopy analysis indicated that the oxygen atoms in the two situations could coordinate to Li+ and this coordination resulted in the reduction of the electron orbit binding energy of F and S.