All optical degenerate mode-group multiplexing using a Mode Selective Switch

A Mode Selective Switch based around an LCoS Spatial Light Modulator is demonstrated to optically demultiplex modes with the same propagation constants to the same output fibres, using a common phase mask for all channels. © 2012 IEEE.

A low latency optical top of rack switch for data centre networks with minimized processor energy load

We propose a low latency optical data center top of rack switch using recirculation buffering and a hybrid MZ/SOA switch architecture to reduce the network power dissipated on future optically connected server chips by 53%. © OSA 2014.

Design and fabrication of compact nonblocking 4X4 optical matrix switch on silicon-on-insulator by anisotropic chemical etching

A folding nonblocking 4 X 4 optical matrix switch in simplified-tree architecture was designed and fabricated on a silicon-on-insulator wafer. To compress chip size, switch elements (SEs) were connected by total internal reflection mirrors instead of conventional S-bends. For obtaining smooth interfaces, potassium hydroxide (KOH) anisotropic chemical etching of silicon was employed. The device has a compact size of 20 X 3.2 mm(2) and a fast response of 8 +/- 1 mu s. Power consumption of 2 x 2 SE and excess loss per mirror were 145 mW and -1.1 dB, respectively. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Novel folding 8x8 silicon-based optical matrix switch with tapered waveguides and self-aligned corner mirrors

Novel folding 8 x 8 matrix switches based on silicon on insulator were demonstrated. In the design, single-mode rib waveguides and multimode interferences are connected by optimized tapered waveguides to reduce the mode coupling loss between the two types of waveguides. The self-aligned method was applied to the key integrated turning mirrors for perfect positions and low loss of them. A mixed etching process including inductively coupled plasma and chemical etching was employed to etch waveguides and mirrors, respectively. The compact size of the device is only 20 x 3.2 mm(2). The switch element with high switching speed and low power consumption is presented in the matrix. The average insertion loss of the matrix is about -21 dB, and the excess loss of one mirror is measured of -1.4 dB. The worst crosstalk is larger than 21 dB. Experimental results illuminate that some of the main characteristics of optical matrix switches are. developed in the modified design, which is in accord with theoretic analyses.

Silicon-on-insulator based optical waveguide and integrated switch matrix

zhangdi于2010-03-29批量导入

Optimization of Amplifier Placements in Switch-Based Optical Networks

Wavelength division multiplexing (WDM) offers a solution to the problem of exploiting the large bandwidth on optical links; it is the current favorite multiplexing technology for optical communication networks. Due to the high cost of an optical amplifier, it is desirable to strategically place the amplifiers throughout the network in a way that guarantees that all the signals are adequately amplified while minimizing the total number amplifiers being used. Previous studies all consider a star-based network. This paper demonstrates an original approach for solving the problem in switch-based WDM optical network assuming the traffic matrix is always the permutation of the nodes. First we formulate the problem by choosing typical permutations which can maximize traffic load on individual links; then a GA (Genetic Algorithm) is used to search for feasible amplifier placements. Finally, by setting up all the lightpaths without violating the power constaints we confirm the feasibility of the solution.

Optical grooming switch with regenerative functionality for transparent interconnection of networks

We demonstrate a regenerative optical grooming switch for buffer-less interconnection of metro/access and metro/core ring networks with switching functionality in time, space and wavelength domain. Key functionalities of the router are the traffic aggregation with time-slot interchanging (TSI) functionality, the WDM-to-ODTM multiplexing and the OTDM-to-WDM demultiplexing of high-speed channel into lower bit-rate tributaries as well as multi-wavelength all-optical 2R regeneration of several higher-speed signals. BER and Q-factor measurements of different switching scenarios show excellent performance with no error floor and Q-factors above 21 dB.

An all-optical grooming switch for interconnecting access and metro ring networks

A regenerative all-optical grooming switch for interconnecting 130 Gbit/s on-off keying (OOK) metro/core ring and 43 Gbit/s-OOK metro/access ring networks with switching functionality in time, space, and wavelength domains is demonstrated. Key functionalities of the switch are traffic aggregation with time-slot interchanging functionality, optical time division multiplexing (OTDM) to wavelength division multiplexing (WDM) demultiplexing, and multi-wavelength 2R regeneration. Laboratory and field demonstrations show the excellent performance of the new concept with error-free signal transmission and Q-factors above 20 dB.

Conformational Spread as a Mechanism for Cooperativity in the Bacterial Flagellar Switch

The bacterial flagellar switch that controls the direction of flagellar rotation during Chemotaxis has a highly cooperative response. This has previously been understood in terms of the classic two-state, concerted model of allosteric regulation. Here, we used high-resolution optical microscopy to observe switching of single motors and uncover the stochastic multistate nature of the switch. Our observations are in detailed quantitative agreement with a recent general model of allosteric cooperativity that exhibits conformational spread-the stochastic growth and shrinkage of domains of adjacent subunits sharing a particular conformational state. We expect that conformational spread will be important in explaining cooperativity in other large signaling complexes.

Optical, electrochemical and morphological investigations of poly (3,4-propylenedioxythiophene)-sultone (PProDOT-S) thin films

In this paper, we have carried out thin film characterization of poly(3,4-propylenedioxythiophene)-sultone (PProDOT-S), a derivative of electrochromic poly(3,4-propylenedioxythiophene) (PProDOT). PProDOT-S was deposited onto transparent conducting oxide coated glass substrates by solution casting method. Single wavelength spectrophotometry is used to monitor the switching speed and contrast ratio at maximum wavelength (lambda (max)). The percentage transmittance at the lambda (max) of the neutral polymer is monitored as a function of time when the polymer film is repeatedly switched. This experiment gives a quantitative measure of the speed with which a film is able to switch between the two states i.e. the coloured and the bleached states. PProDOT-S films were switched at a voltage of 1 center dot 9 V with a switching speed of 2 s at lambda (max) of 565 nm and showed a contrast of similar to 37%. Cyclic voltammetry performed at different scan rates have shown the characteristic anodic and cathodic peaks. The structural investigations of PProDOT-S films by IR spectra were in good agreement with previously reported results. Raman spectra of PProDOT-S showed a strong Raman peak at 1509 cm (-aEuro parts per thousand 1) and a weak peak at 1410 cm (-aEuro parts per thousand 1) due to the C = C asymmetric and symmetric stretching vibrations of thiophene rings. The morphological investigations carried out by using scanning electron microscope (SEM) of polymer films have shown that these polymers are found to be arranged in dense packed clusters with non-uniform distribution having an average width and length of 95 nm and 160 nm, respectively.

Enhancement in threshold voltage with thickness in memory switch fabricated using GeSe1.5S0.5 thin films

Investigations on the electrical switching, structural, optical and photoacoustic analysis have been undertaken on chalcogenide GeSe1.5S0.5 thin films of various thicknesses prepared by vacuum evaporation technique. The decrease of band gap energy with increase in film thickness has been explained using the `density of states model'. The structural units of the films are characterized using Raman spectroscopy and the deconvoluted Raman peaks obtained from Gaussian fit around 188 cm(-1), 204 cm(-1) and 214 cm(-1) favors Ge-chalcogen tetrahedral units forming corner and edge sharing tetrahedra. All the thin films samples have been exhibited memory-type electrical switching behavior. An enhancement in the threshold voltages of GeSe1.5S0.5 thin films have been observed with increase in film thickness. The thickness dependence of switching voltages provide an insight into the switching mechanism and it is explained by the Joule heating effect. (C) 2014 Elsevier B.V. All rights reserved.