Effect of OH- on upconversion luminescence of Er3(+)-doped oxyhalide tellurite glasses

The Raman spectra, infrared spectra and upconversion luminescence spectra were studied, and the effect mechanism of OH- groups on the upconversion luminescence of Er3+-doped oxyhalide tellurite glasses was analyzed. The results show that the phonon energy of lead chloride tellurite (PCT) glass was lower than that of lead fluoride tellurite (PFT) glass, but upconversion luminescence intensity of Er3+-doped PFT glass was higher than that of Er3+-doped PCT glass. The analysis considers that it was attributed mainly to the effect of OH- groups. The lower the absorption coefficient of the OH- groups, the higher the fluorescence lifetime of Er3+, and as a result the higher upconversion luminescence intensity of Er3+. In this work, the effect of OH groups on the upconversion luminescence of Er3+ was bigger than that of the phonon energy. (c) 2005 Elsevier Inc. All rights reserved.

Broadband amplification and upconversion luminescence properties of Er3+/Yb3+ co-doped fluorophosphate glass

Broadband and upconversion properties were studied in Er3+/Yb3+ co-doped fluorophosphate glasses. Large Omega(6) and S-ed/(S-ed + S-md) values and the flat gain profile over 1530-1585 nm indicate the good broadband properties of the glass system. And a premise of using Omega(6) as a parameter to estimate the broadband properties of the glasses is proposed for the first time to our knowledge. Results showed that fluorescence intensity, upconversion luminescence intensity, the intensity ratio of red/green light (656 nm/545 nm) are closely related to the Yb3+:Er3+ ratio and Er3+ concentration, and the corresponding calculated lifetime of F-4(9/2) and S-4(3/2) states for red and green upconversion samples proves this conclusion. The upconversion mechanism is also discussed. (c) 2005 Elsevier Ltd. All rights reserved.

Effect of F- ions on physical and spectroscopic properties of Yb3+-doped TeO2-based glasses

The effects of F- ions on physical and spectroscopic properties of the Yb3+ in tellurite glass system are investigated. The results show that the glass system takes on good thermal stability with the content of ZnF2 lower than 15 mol%, both the emission cross-section and the fluorescence lifetime of Yb3+ ions increase evidently which indicate that such oxyfluoride tellurite glass system is a promising laser host matrix for high power generation. FT-IR spectra were used to analyze the effect of F- ions on the structure of tellurite glasses and OH- groups in this glass system. Analysis demonstrates that addition of fluoride decreases the symmetry of the structure of tellurite glasses which increases the emission cross-section and removes the OH- groups, and which improves the measured fluorescence lifetime of Yb3+ ions. (c) 2004 Elsevier B.V. All rights reserved.

Fluorescence lifetime increasing with F- ions into ytterbium-doped germanium-lead-tellurite glasses

The effects of F- ions in a germanium-lead-tellurite glass system oil the spectral and potential laser properties of the Yb3+ are investigated. The absorption spectra, lifetimes, the emission cross-sections and the minimum pump intensities of the glass system with and without F- ions have been measured and calculated. The results show that the fluorescence lifetime and the minimum pump intensity of Yb3+ ions increase evidently, which indicates that germanium lead-oxyfluoride tellurite glass is a promising laser host matrix for high power generation. FT-IR spectra were used to analyse the effect of F- ions on OH- groups in this glass system. Analysis demonstrates that addition of fluoride removes the OH- groups and results in improvement of fluorescence lifetime of Yb3+.

The effect of OH- groups on the spectroscopic properties of erbium-doped tellurite glasses

A series of five different concentration erbium-doped tellurite glasses with various hydroxl groups were prepared. Infrared spectra of glasses were measured. In order to estimate the exact content of OH- groups in samples, various absorption coefficients of the OH- vibration band were analyzed under the different oxygen bubbling times. The absorption spectra of the glasses were measured, and the Judd-Ofelt intensity parameters Omega(i) of samples with the different erbium ions concentration and OH- contents were calculated on the basis of the Judd-Ofelt theory. The peak stimulated emission cross-section of (I13/2 ->I15/2)-I-4-I-4 transition of the samples was finally calculated by using the McCumber theory. The fluorescence spectra of Er3+:I-4(13/2)->I-4(15/2) transition and the lifetime of Er3+:I-4(13/2) level of the samples were measured. The effects of OH- groups on the spectroscopic properties of Er3+ doped samples with the different concentrations were discussed. The results showed that the OH- groups had great influences on the Er3+ lifetime and the fluorescence peak intensity. The OH- group is a main influence factor of fluorescence quenching when the doping concentration of Er2O3 is smaller than 1.0 mol%, but higher after this concentration, the energy transfer of Er3+ ions turns into the main function of the fluorescence quenching. And basically, there is no influence on the other spectroscopic properties (FWHM, absorption spectra, peak stimulated emission cross section, etc.).

Effect of F- ions on spectroscopic properties of Yb3+-doped zinc-tellurite glasses

this paper is retracted

Broadband infrared luminescence of bismuth-doped borosilicate glasses

We prepare bismuth-doped borosilicate glasses and the luminescence properties in infrared wavelength region are investigated. Transmission spectrum, fluorescence spectrum and fluorescence decay curve are measured. The glasses exhibit a broad infrared luminescence peaking at 1340nm with the full width at half maximum of about 205nm, and lifetime of 273 mu s when excited by an 808-nm laser diode. The glasses are promising materials for broadband optical amplifiers and tunable lasers.

Growth and its spectroscopic properties of Sm : YAP crystal

Sm3+-doped yttrium aluminum perovskite (YAP) single crystal was grown by Czochralski (CZ) method. The absorption and fluorescence spectra along the crystallographic axis b were measured at room temperature. Judd-Ofelt theory was used to calculate the intensity parameters (Omega(t)), the spontaneous emission probability, the branching ratio and the radiative lifetime of the state (4)G(5/2). The peak emission cross-sections were also estimated at 567, 607, and 648 nm wavelengths. (c) 2006 Elsevier B.V. All rights reserved.

Growth and spectral properties of Gd2SiO5 crystal codoped with Er and Yb

Gd2SiO5 (GSO) single crystal codoped with Yb3+ and Er3+ (Abbr. as Er:Yb:GSO) was successfully grown by the Czochralski (CZ) method for the first time and the spectral characteristics were investigated. The absorption and fluorescence spectra were measured. The emission lifetime of the I-4(13/2)-Er-level was measured to be 5.84ms and the emission cross-section at 1529nm was calculated to be 1.03 x 10(-20) cm(2). The results indicate that Er:Yb:GSO is a potential laser material at similar to 1. 55 mu m wavelength region. (c) 2006 Elsevier B.V. All rights reserved.

Growth and spectroscopic characteristics of Yb : LPS single crystal

For the first time, a high optical quality Yb3+-doped lutetium pyrosilicate laser crystal Lu2Si2O7 (LPS) was grown by the Czochralski (Cz) method. The segregation coefficient of ytterbium ion in Yb:LPS crystal detected by the inductively coupled plasma atomic emission spectrometer (TCP-AES) method is equal to 0.847. X-ray powder diffraction result confirms the C2/m phase monoclinic space group of the grown crystal and the peaks corresponding to different phases were indexed. The absorption and fluorescence spectra, as well as fluorescence decay lifetime of Yb3+ ion in LPS have been investigated. The absorption and fluorescence cross-sections of the transitions F-2(7/2) <-> F-2(5/2) of Yb3+ ion in LPS crystal have been determined. The advantages of the Yb:LPS crystal including high crystal quality, quasi-four-level laser operating scheme, high absorption cross-sections (1.33 x 10(-2) cm(2)) and particularly broad emission bandwidth (similar to 62 nm) indicated that the Yb:LPS crystal seemed to be a promising candidate used as compact, efficient thin chip lasers when LD is pumped at 940 and 980 nm due to its low-symmetry monoclinic structure and single crystallographic site. (c) 2007 Elsevier B.V. All rights reserved.

Growth and spectral properties of Yb : FAP single crystal

In this paper, single crystal of ytterbium (Yb) doped Ca-5(PO4)(3)F (FAP) has been grown along the c-axis by using the Czochralski method. The segregation coefficients of Yb3+ in the Yb:FAP crystal has been determined by ICP-AES method. The absorption spectrum, fluorescence spectrum and fluorescence lifetime of the Yb:FAP crystal has been also measured at room temperature. In the absorption spectra, there are two absorption bands at 904 and 982 nm, respectively, which are suitable for InGaAs diode laser pumping. The absorption cross-section (sigma(abs)) is 5.117 x 10(-20) cm(2) with an FWHM of 4 nm at 982 nm. The emission cross-section is (sigma(em)) 3.678 x 10(-20) cm(2) at 1042 nm. Favorable values of the absorption cross-section at about 982 nm are promising candidates for laser diode (LD) pumping. (c) 2005 Elsevier B.V. All rights reserved.

Spectroscopic properties of Yb:YAP crystal

The 10at% Yb-YAP crystal has been grown by the Czochralski method. The absorption and emission spectra and fluorescence lifetime of Yb:YAP crystal at room temperature were studied. There is a strong absorption band centered at 959 nm and the absorption cross-section of 1.51 × 10^-20 cm². The emission cross-section at 1040 nm is 0.6 × 10^-20 cm² and the fluorescence lifetime is about 1.2 ms. The effects of O₂-annealing on the spectral properties were studied. The spectroscopic properties strongly depended on the axis direction and b axis was the best direction for laser output. The spectrum parameters of Yb:YAP and Yb:YAG crystal were compared.}

Polarized spectral analysis of Ho3+ ions in biaxial YAlO3 crystal for 2 mu m lasers

An Ho3+-doped YAlO3 (Ho : YAP) single crystal has been grown by the Czochralski technique. The polarized absorption spectra, polarized fluorescence spectra and fluorescence decay curve of the crystal are measured at room temperature. The spectroscopic parameters are calculated based on Judd-Ofelt theory, and the effective phenomenological intensity parameters Omega(2,eff), Omega(4,eff) and Omega(6,eff) are obtained to be 2.89 x 10(-20), 2.92 x 10(-20) and 1.32 x 10(-20) cm(2), respectively. The room-temperature fluorescence lifetime of the Ho3+ 5I(7) -> I-5(8) transition is measured to be 8.1 ms. Values of the absorption and emission cross-sections with different polarizations are presented for the I-5(7) manifold, and the polarized gain cross-section curves are also provided and discussed.

Crystal growth and spectral properties of Sm:GdVO4

The 2 at.% Sm:GdVO4 crystal was grown by the Czochralski method. The segregation coefficient of Sm3+ ion in this crystal is 0.98. The crystal structure of the Sm:GdVO4 crystal was determined by X-ray diffraction analysis. Judd-Ofelt theory was used to calculate the intensity parameters (Omega(i)), the spontaneous emission probability, the luminary branching ratio and the radiative lifetime of the state (4)G(5/2). The stimulated emission cross-sections at 567, 604 and 646 nm are calculated to be 5.92 x 10(-21), 7.62 x 10(-21) and 5.88 x 10(-21) cm(2), respectively. The emission cross-section at 604 nm is 4.4 times lager than that in Sm: YAP at 607 nm. (C) 2007 Elsevier B.V. All rights reserved.

Dynamical behavior of damped driven coupled single electron simple harmonic oscillators

Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave microwave spectroscopy to study the behavior of electrons trapped at defects within the gate dielectric of a sol-gel-based high-k silicon MOSFET. Disorder leads to a wide distribution in trap properties, allowing more than 1000 traps to be individually addressed in a single transistor within the accessible frequency domain. Their dynamical behavior is explored by pulsing the microwave excitation over a range of times comparable to the phase coherence time and the lifetime of the electron in the trap. Trap occupancy is limited to a single electron, which can be manipulated by resonant microwave excitation and the resulting change in trap occupancy is detected by the change in the channel current of the transistor. The trap behavior is described by a classical damped driven simple harmonic oscillator model, with the phase coherence, lifetime and coupling strength parameters derived from a continuous wave (CW) measurement only. For pulse times shorter than the phase coherence time, the energy exchange between traps, due to the coupling, strongly modulates the observed drain current change. This effect could be exploited for 2-qubit gate operation. The very large number of resonances observed in this system would allow a complex multi-qubit quantum mechanical circuit to be realized by this mechanism using only a single transistor.