Random forest algorithm with derived geographical layers for improved classification of remote sensing data

Effective conservation and management of natural resources requires up-to-date information of the land cover (LC) types and their dynamics. The LC dynamics are being captured using multi-resolution remote sensing (RS) data with appropriate classification strategies. RS data with important environmental layers (either remotely acquired or derived from ground measurements) would however be more effective in addressing LC dynamics and associated changes. These ancillary layers provide additional information for delineating LC classes' decision boundaries compared to the conventional classification techniques. This communication ascertains the possibility of improved classification accuracy of RS data with ancillary and derived geographical layers such as vegetation index, temperature, digital elevation model (DEM), aspect, slope and texture. This has been implemented in three terrains of varying topography. The study would help in the selection of appropriate ancillary data depending on the terrain for better classified information.

Effect of side confining walls on the growth rate of compressible mixing layers

Model free simulations are performed to study the effect of the presence of side wall in compressible mixing of two parallel dissimilar gaseous streams with significant temperature difference. The turbulence statistics shows the three dimensional nature of the flow with and without the presence of side walls. The presence of side wall neither makes the flow field two dimensional, nor suppresses three dimensional disturbances. However, the comparison of shear layer growth rate and wall pressures reveal a better match with the two dimensional simulation results. This better match is explained on the basis of formation of oblique structures due to the presence of side walls which also suppress the distribution of momentum in third direction making the pressures to be higher as compared with the case without side walls. (C) 2013 Elsevier Ltd. All rights reserved.

On the k(1)(-1) scaling in sink-flow turbulent boundary layers

Scaling of the streamwise velocity spectrum phi(11)(k(1)) in the so-called sink-flow turbulent boundary layer is investigated in this work. The present experiments show strong evidence for the k(1)(-1) scaling i.e. phi(11)(k(1)) = Lambda(1)U(tau)(2)k(1)(-1), where k(1)(-1) is the streamwise wavenumber and U-tau is the friction velocity. Interestingly, this k(1)(-1) scaling is observed much farther from the wall and at much lower flow Reynolds number (both differing by almost an order of magnitude) than what the expectations from experiments on a zero-pressure-gradient turbulent boundary layer flow would suggest. Furthermore, the coefficient A(1) in the present sink-flow data is seen to be non-universal, i.e. A(1) varies with height from the wall; the scaling exponent -1 remains universal. Logarithmic variation of the so-called longitudinal structure function, which is the physical-space counterpart of spectral k(1)(-1) scaling, is also seen to be non-universal, consistent with the non-universality of A(1). These observations are to be contrasted with the universal value of A(1) (along with the universal scaling exponent of 1) reported in the literature on zero-pressure-gradient turbulent boundary layers. Theoretical arguments based on dimensional analysis indicate that the presence of a streamwise pressure gradient in sink-flow turbulent boundary layers makes the coefficient A(1) non-universal while leaving the scaling exponent -1 unaffected. This effect of the pressure gradient on the streamwise spectra, as discussed in the present study (experiments as well as theory), is consistent with other recent studies in the literature that are focused on the structural aspects of turbulent boundary layer flows in pressure gradients (Harun etal., J. Flui(d) Mech., vol. 715, 2013, pp. 477-498); the present paper establishes the link between these two. The variability of A(1) accommodated in the present framework serves to clarify the ideas of universality of the k(1)(-1) scaling.

Scaling of pressure spectrum in turbulent boundary layers

Scaling of pressure spectrum in zero-pressure-gradient turbulent boundary layers is discussed. Spatial DNS data of boundary layer at one time instant (Re-theta = 4500) are used for the analysis. It is observed that in the outer regions the pressure spectra tends towards the -7/3 law predicted by Kolmogorov's theory of small-scale turbulence. The slope in the pressure spectra varies from -1 close to the wall to a value close to -7/3 in the outer region. The streamwise velocity spectra also show a -5/3 trend in the outer region of the flow. The exercise carried out to study the amplitude modulation effect of the large scales on the smaller ones in the near-wall region reveals a strong modulation effect for the streamwise velocity, but not for the pressure fluctuations. The skewness of the pressure follows the same trend as the amplitude modulation coefficient, as is the case for the velocity. In the inner region, pressure spectra were seen to collapse better when normalized with the local Reynolds stress (-(u'v') over bar) than when scaled with the local turbulent kinetic energy (q(2) = (u'(2)) over bar + (v'(2)) over bar + (w'(2)) over bar)

Spontaneous Breaking of Time-Reversal Symmetry in Strongly Interacting Two-Dimensional Electron Layers in Silicon and Germanium

We report experimental evidence of a remarkable spontaneous time-reversal symmetry breaking in two-dimensional electron systems formed by atomically confined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si) and germanium (Ge). Weak localization corrections to the conductivity and the universal conductance fluctuations were both found to decrease rapidly with decreasing doping in the Si: P and Ge: P delta layers, suggesting an effect driven by Coulomb interactions. In-plane magnetotransport measurements indicate the presence of intrinsic local spin fluctuations at low doping, providing a microscopic mechanism for spontaneous lifting of the time-reversal symmetry. Our experiments suggest the emergence of a new many-body quantum state when two-dimensional electrons are confined to narrow half-filled impurity bands.

Low-density three-dimensional foam using self-reinforced hybrid two-dimensional atomic layers

Low-density nanostructured foams are often limited in applications due to their low mechanical and thermal stabilities. Here we report an approach of building the structural units of three-dimensional (3D) foams using hybrid two-dimensional (2D) atomic layers made of stacked graphene oxide layers reinforced with conformal hexagonal boron nitride (h-BN) platelets. The ultra-low density (1/400 times density of graphite) 3D porous structures are scalably synthesized using solution processing method. A layered 3D foam structure forms due to presence of h-BN and significant improvements in the mechanical properties are observed for the hybrid foam structures, over a range of temperatures, compared with pristine graphene oxide or reduced graphene oxide foams. It is found that domains of h-BN layers on the graphene oxide framework help to reinforce the 2D structural units, providing the observed improvement in mechanical integrity of the 3D foam structure.

Self-Assembled, Aligned ZnO Nanorod Buffer Layers for High-Current-Density, Inverted Organic Photovoltaics

Two different soft-chemical, self-assembly-based solution approaches are employed to grow zinc oxide (ZnO) nanorods with controlled texture. The methods used involve seeding and growth on a substrate. Nanorods with various aspect ratios (1-5) and diameters (15-65 nm) are grown. Obtaining highly oriented rods is determined by the way the substrate is mounted within the chemical bath. Furthermore, a preheat and centrifugation step is essential for the optimization of the growth solution. In the best samples, we obtain ZnO nanorods that are almost entirely oriented in the (002) direction; this is desirable since electron mobility of ZnO is highest along this crystallographic axis. When used as the buffer layer of inverted organic photovoltaics (I-OPVs), these one-dimensional (1D) nanostructures offer: (a) direct paths for charge transport and (b) high interfacial area for electron collection. The morphological, structural, and optical properties of ZnO nanorods are studied using scanning electron microscopy, X-ray diffraction, and ultraviolet-visible light (UV-vis) absorption spectroscopy. Furthermore, the surface chemical features of ZnO films are studied using X-ray photoelectron spectroscopy and contact angle measurements. Using as-grown ZnO, inverted OPVs are fabricated and characterized. For improving device performance, the ZnO nanorods are subjected to UV-ozone irradiation. UV-ozone treated ZnO nanorods show: (i) improvement in optical transmission, (ii) increased wetting of active organic components, and (iii) increased concentration of Zn-O surface bonds. These observations correlate well with improved device performance. The devices fabricated using these optimized buffer layers have an efficiency of similar to 3.2% and a fill factor of 0.50; this is comparable to the best I-OPVs reported that use a P3HT-PCBM active layer.

Effect of strain on electronic and thermoelectric properties of few layers to bulk MoS2

The sensitive dependence of the electronic and thermoelectric properties of MoS2 on applied strain opens up a variety of applications in the emerging area of straintronics. Using first-principles-based density functional theory calculations, we show that the band gap of a few layers of MoS2 can be tuned by applying normal compressive (NC) strain, biaxial compressive (BC) strain, and biaxial tensile (BT) strain. A reversible semiconductor-to-metal transition (S-M transition) is observed under all three types of strain. In the case of NC strain, the threshold strain at which the S-M transition occurs increases when the number of layers increase and becomes maximum for the bulk. On the other hand, the threshold strain for the S-M transition in both BC and BT strains decreases when the number of layers increase. The difference in the mechanisms for the S-M transition is explained for different types of applied strain. Furthermore, the effect of both strain type and the number of layers on the transport properties are also studied using Botzmann transport theory. We optimize the transport properties as a function of the number of layers and the applied strain. 3L- and 2L-MoS2 emerge as the most efficient thermoelectric materials under NC and BT strain, respectively. The calculated thermopower is large and comparable to some of the best thermoelectric materials. A comparison among the feasibility of these three types of strain is also discussed.

Investigation of the separated region ahead of three-dimensional protuberances on plates and cones in hypersonic flows with laminar boundary layers

Heat transfer rate and pressure measurements were made upstream of surface pro-tuberances on a flat plate and a sharp cone subjected to hypersonic flow in a conventional shock tunnel. Heat flux was measured using platinum thin-film sensors deposited on macor substrate and the pressure measurements were made using fast acting piezoelectric sensors. A distinctive hot spot with highest heat flux was obtained near the foot of the protuberance due to heavy vortex activity in the recirculating region. Schlieren flow visualization was used to capture the shock structures and the separation distance ahead of the protrusions was quantitatively measured for varying protuberance heights. A computational analysis was conducted on the flat plate model using commercial computational fluid dynamics software and the obtained trends of heat flux and pressure were compared with the experimental observation. Experiments were also conducted by physically disturbing the laminar boundary layer to check its effect on the magnitude of the hot spot heat flux. In addition to air, argon was also used as test gas so that the Reynolds number can be varied. (C) 2014 AIP Publishing LLC.

Analysis of absorption characteristics of stacked patch arrays on moderately lossy dielectric layers

It is demonstrated that a square patch array on a moderately lossy dielectric can be transformed into a near-perfect absorber by the addition of a metallic square loop layer between the patch array and the metal back. In this configuration, the condition of perfect absorption can be easily obtained by modifying loop dimensions. The absorption properties of this configuration are analyzed theoretically using an equivalent circuit model and full-wave electromagnetic simulations. Experimental investigations included a bistatic radar cross-section measurement, which ensured that there are no scattered fields in other directions. An array structure built on a commercially available FR4 substrate with copper metallization is used to experimentally validate these results.

A predictive approach to CVD of crystalline layers of TMDs: the case of MoS2

Layered transition metal dichalcogenides (TMDs), such as MoS2, are candidate materials for next generation 2-D electronic and optoelectronic devices. The ability to grow uniform, crystalline, atomic layers over large areas is the key to developing such technology. We report a chemical vapor deposition (CVD) technique which yields n-layered MoS2 on a variety of substrates. A generic approach suitable to all TMDs, involving thermodynamic modeling to identify the appropriate CVD process window, and quantitative control of the vapor phase supersaturation, is demonstrated. All reactant sources in our method are outside the growth chamber, a significant improvement over vapor-based methods for atomic layers reported to date. The as-deposited layers are p-type, due to Mo deficiency, with field effect and Hall hole mobilities of up to 2.4 cm(2) V-1 s(-1) and 44 cm(2) V-1 s(-1) respectively. These are among the best reported yet for CVD MoS2.

Reynolds averaged Navier-Stokes simulations of compressible mixing layers of similar and dissimilar gases: Performance of k- turbulence model

The issue of growth rate reduction of high speed mixing layer with convective Mach number is examined for similar and dissimilar gases using Reynolds averaged Navier-Stokes (RANS) methodology with k- turbulence model. It is observed that the growth rate predicted using RANS simulations closely matches with that predicted using model free simulations. Velocity profiles do not depend on the modelled value of Pr-t and Sc-t; while the temperature and species mass fraction distributions depend heavily on them. Although basic k- turbulence model could not capture the reduced growth rate for the mixing layer formed between similar gases, it predicts very well the reduced growth rate for the mixing layer for the dissimilar gases. It appears that density ratio changes caused by temperature changes for the dissimilar gases have profound effect on the growth rate reduction.

PREDICTION OF TRANSITIONAL AND SEPARATED BOUNDARY LAYERS IN A COMPRESSOR CASCADE

Numerical simulations were performed of experiments from a cascade of stator blades at three low Reynolds numbers representative of flight conditions. Solutions were assessed by comparing blade surface pressures, velocity and turbulence intensity along blade normals at several stations along the suction surface and in the wake. At Re = 210,000 and 380,000 the laminar boundary layer over the suction surface separates and reattaches with significant turbulence fluctuations. A new 3-equation transition model, the k-k(L)-omega model, was used to simulate this flow. Predicted locations of the separation bubble, and profiles of velocity and turbulence fluctuations on blade-normal lines at various stations along the blade were found to be quite close to measurements. Suction surface pressure distributions were not as close at the lower Re. The solution with the standard k-omega SST model showed significant differences in all quantities. At Re = 640,000 transition occurs earlier and it is a turbulent boundary layer that separates near the trailing edge. The solution with the Reynolds stress model was found to be quite close to the experiment in the separated region also, unlike the k-omega SST solution. Three-dimensional computations were performed at Re = 380,000 and 640,000. In both cases there were no significant differences between the midspan solution from 3D computations and the 2D solutions. However, the 3D solutions exhibited flow features observed in the experiments the nearly 2D structure of the flow over most of the span at 380,000 and the spanwise growth of corner vortices from the endwall at 640,000.

Spotting 2D atomic layers on aluminum nitride thin films

Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2 `' Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.