932 resultados para flash crowd attack
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"Certain of these orders ... have been printed in Col. E. Cruikshank's Documentary history of Niagara." Created on behalf of the Women's Canadian Historical Society of Toronto
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March 23, 1808. Printed by order of the House of Representatives.
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March 23, 1808. Printed by order of the House of Representatives.
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Printed at the Repertory Office
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Includes rare 1816 battle plan map.
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A map titled "Plan of Attack of a Iagdkommaudo west of Cantigny on 27 May 1918. There are two sketches and the legend indicates that sketch no. 1 is "Firing until 7A.M." and sketch no. 2 is "Firing after 7A.M."
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A photograph of Arthur A. Schmon with Eleanore Celeste Schmon with a crowd gathered around. The reverse of the picture is stamped "Editorial Associates Ltd. Montreal - Toronto"
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The description of the image reads "(2) Admiring Tourists viewing the Falls, from Prospect Point, Niagara, U.S.A."
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Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.
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We enhance photographs shot in dark environments by combining a picture taken with the available light and one taken with the flash. We preserve the ambiance of the original lighting and insert the sharpness from the flash image. We use the bilateral filter to decompose the images into detail and large scale. We reconstruct the image using the large scale of the available lighting and the detail of the flash. We detect and correct flash shadows. This combines the advantages of available illumination and flash photography.
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Resumen basado en la publicación
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A flash learning resource that educates users about Web Accessibility.